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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBU6M-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 175A | 6A | 1kV | 5μA @ 1000V | 1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||
| TS40P05G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 20A | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU1003G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbu1005gt0-datasheets-5816.pdf | 4-SIP, KBU | 4 | 5 Weeks | EAR99 | UL RECOGNIZED | NO | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 200A | 1 | 10A | 200V | 5μA @ 200V | 1.1V @ 10A | 10A | ||||||||||||||||||||||||||||||||||||||||||
| GBU402-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-gbu406g-datasheets-1204.pdf | 4-SIP, GBU | 12 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | GBU402 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 150A | 4A | 200V | 10μA @ 200V | 1V @ 2A | 4A | |||||||||||||||||||||||||||||||||||||||||||||
| TS25P02G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 100V | 10μA @ 100V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4B-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2001 | /files/vishaysemiconductordiodesdivision-gbu4ge351-datasheets-7288.pdf | 4-SIP, GBU | 22.3mm | 18.8mm | 3.56mm | 4 | 13 Weeks | Unknown | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | GBU4B | 4 | Single | 1 | Bridge Rectifier Diodes | 4A | 1V | 150A | 5μA | ISOLATED | SILICON | 5μA | 100V | 150A | Single Phase | 1 | 3A | 5μA @ 100V | 1V @ 4A | 3A | ||||||||||||||||||||||||||||
| BU1010-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-SIP, BU | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 120A | 1 | 3.2A | 1kV | 5μA @ 1000V | 1.05V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||||
| GSIB6A40-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gsib6a20e345-datasheets-1176.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 2.8A | 150A | 10μA | ISOLATED | SILICON | 10μA | 400V | Single Phase | 1 | 400V | 10μA @ 400V | 1V @ 3A | ||||||||||||||||||||||||||||||||||
| GBU6K-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 8 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 175A | 6A | 800V | 5μA @ 800V | 1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||
| BU1008-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1008 | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.2A | 1.05V | 120A | 5μA | ISOLATED | SILICON | 120A | 5μA | 800V | 120A | Single Phase | 1 | 5μA @ 800V | 1.05V @ 5A | |||||||||||||||||||||||||||||
| GBU6D-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 175A | 6A | 200V | 5μA @ 200V | 1V @ 3A | 6A | |||||||||||||||||||||||||||||||||||||||||||||
| GBU6K-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | 4 | EAR99 | Tin | unknown | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | 175A | 5μA | 800V | Single Phase | 6A | 5μA @ 800V | 1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||
| GBU8B-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 100V | 5μA @ 100V | 1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU804-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu801g-datasheets-5908.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU804 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 200A | 1 | 8A | 400V | 10μA @ 400V | 1V @ 4A | 8A | |||||||||||||||||||||||||||||||||||||||
| TS40P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 20A | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS25P05GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU1001 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2008 | 4-SIP, KBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 20 | Straight | 5.05kV | 400μm | 10A | 300A | 10μA | 10A | 100V | Single Phase | 100V | 10μA @ 100V | 1.05V @ 10A | |||||||||||||||||||||||||||||||||||||||||||||
| KBU1004G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbu1005gt0-datasheets-5816.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 400V | 5μA @ 400V | 1.1V @ 10A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6005-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu6005g-datasheets-1436.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU6005 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 175A | 1 | 6A | 50V | 10μA @ 50V | 1V @ 3A | 6A | |||||||||||||||||||||||||||||||||||||||
| GBU802-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu801g-datasheets-5908.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU802 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 200A | 1 | 8A | 200V | 10μA @ 200V | 1V @ 4A | 8A | |||||||||||||||||||||||||||||||||||||||
| TS25P04G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 400V | 10μA @ 400V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU806-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu801g-datasheets-5908.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU806 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 200A | 1 | 8A | 600V | 10μA @ 600V | 1V @ 4A | 8A | |||||||||||||||||||||||||||||||||||||||
| KBU1002G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu1005gt0-datasheets-5816.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 100V | 5μA @ 100V | 1.1V @ 10A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| G5SBA60-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-g5sba60m351-datasheets-0955.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 600V | 5μA @ 600V | 1.05V @ 3A | 2.8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU8G-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 400V | 5μA @ 400V | 1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BU1008A-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1008 | 4 | Single | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3A | 1.1V | 90A | 5μA | ISOLATED | SILICON | 90A | 5μA | 800V | 90A | Single Phase | 10A | 1 | 3A | 5μA @ 800V | 1.1V @ 5A | |||||||||||||||||||||||||
| BU1510-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3.4A | 200A | 5μA | ISOLATED | SILICON | 1000V | 200A | 5μA | 1kV | Single Phase | 1 | 5μA @ 1000V | 1.05V @ 7.5A | ||||||||||||||||||||||||||||||
| KBU1006G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu1005gt0-datasheets-5816.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 800V | 5μA @ 800V | 1.1V @ 10A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ1002-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-gbj1006bp-datasheets-0920.pdf | 4-SIP, GBJ | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBJ1002 | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 170A | 1 | 10A | 200V | 10μA @ 200V | 1.05V @ 5A | 10A | |||||||||||||||||||||||||||||||||
| TS35P06G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 17.5A | 35A |
