Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Voltage Rating (AC) | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Forward Voltage-Max | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
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GBJL606-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | 1 (Unlimited) | Standard | RoHS Compliant | 4-SIP, GBJL | 4 | EAR99 | UL RECOGNIZED | compliant | NO | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 170A | 1 | 6A | 600V | 5μA @ 600V | 1V @ 3A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||
2W08M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | 125°C | -65°C | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-2w04m-datasheets-0680.pdf | 4-Circular, WOM | 7 Weeks | 4 | 4 | Straight | 100mOhm | WOM | 3mm | 2A | 250V | 60A | 10μA | 10A | 800V | Single Phase | 800V | 10μA @ 800V | 1.1V @ 2A | 2A | |||||||||||||||||||||||||||||||||||||||||||||
MSDM75-08 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/microsemicorporation-msdm7512-datasheets-0839.pdf | Module | 5 | 22 Weeks | 5 | No | UPPER | UNSPECIFIED | 5 | Single | 6 | 75A | ISOLATED | SILICON | 500μA | 800V | Three Phase | 3 | 800V | 500μA @ 800V | 1.6V @ 150A | |||||||||||||||||||||||||||||||||||||||||||||||
MDB10SV | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | Standard | RoHS Compliant | 2017 | /files/onsemiconductor-mdb10sv-datasheets-0903.pdf | 4-SMD, Gull Wing | 5.1mm | 1.45mm | 4.5mm | Lead Free | 4 | 6 Weeks | 95mg | No SVHC | 4 | yes | EAR99 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | MDB10 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | 1.2A | 1.015V | 50A | SILICON | 1000V | 1000V | 50A | 10μA | 1kV | Single Phase | 1 | 700V | 10μA @ 1000V | 1.015V @ 1.2A | |||||||||||||||||||||||||||||||
3KBP06M-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | WIRE | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 80A | 1 | 3A | 50V | 5μA @ 600V | 1.05V @ 3A | 3A | ||||||||||||||||||||||||||||||||||||||||||||||
3N247-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | unknown | WIRE | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 100V | Single Phase | 60A | 1 | 1.5A | 100V | 5μA @ 100V | 1V @ 1A | 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||
G2SBA60-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-g2sb80e351-datasheets-0542.pdf | 4-SIP, GBL | 4 | 21 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 60A | 1 | 1.5A | 600V | 5μA @ 600V | 1V @ 750mA | 1.5A | |||||||||||||||||||||||||||||||||||||||||||
MBL106S-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-SMD, Gull Wing | 5.3mm | 1.5mm | 4.6mm | 4 | 14 Weeks | 135.992662mg | yes | EAR99 | UL RECOGNIZED | e3 | Matte Tin (Sn) | DUAL | 260 | NOT SPECIFIED | 4 | R-PDSO-G4 | 30A | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 1 | 1A | 600V | 5μA @ 600V | 950mV @ 400mA | 1A | ||||||||||||||||||||||||||||||||||||||||
3N249-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | WIRE | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 400V | Single Phase | 60A | 1 | 1.5A | 400V | 5μA @ 400V | 1V @ 1A | 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||
3KBP01M-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | unknown | WIRE | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 100V | Single Phase | 80A | 1 | 3A | 50V | 5μA @ 100V | 1.05V @ 3A | 3A | |||||||||||||||||||||||||||||||||||||||||||||||
3N248-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | unknown | WIRE | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 60A | 1 | 1.5A | 200V | 5μA @ 200V | 1V @ 1A | 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||
APT60DF100HJ | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/microsemicorporation-apt60df100hj-datasheets-0924.pdf | SOT-227-4, miniBLOC | 4 | 4 | No | UPPER | UNSPECIFIED | 4 | Single | 1 | Bridge Rectifier Diodes | 90A | 2.8V | ISOLATED | SILICON | 100μA | 1kV | 540A | Single Phase | 1 | 100μA @ 1000V | 2.8V @ 60A | ||||||||||||||||||||||||||||||||||||||||||||||
G2SBA20-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-g2sb80e351-datasheets-0542.pdf | 4-SIP, GBL | 4 | 21 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 60A | 1 | 1.5A | 200V | 5μA @ 200V | 1V @ 750mA | 1.5A | |||||||||||||||||||||||||||||||||||||||||||
2KBP01M-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~165°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-2kbp04me451-datasheets-7907.pdf | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 100V | Single Phase | 60A | 1 | 2A | 100V | 5μA @ 100V | 1.1V @ 3.14A | 2A | |||||||||||||||||||||||||||||||||||||||||||||
3N252-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | WIRE | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 1000V | Single Phase | 60A | 1 | 1.5A | 1kV | 5μA @ 1000V | 1V @ 1A | 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||
APT40DS10HJ | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/microsemicorporation-apt40ds10hj-datasheets-0927.pdf | SOT-227-4, miniBLOC | 4 | 4 | EAR99 | No | UPPER | UNSPECIFIED | 4 | Single | 1 | Bridge Rectifier Diodes | 40A | 880mV | ISOLATED | SILICON | 1mA | 100V | 450A | Single Phase | 1 | 1mA @ 100V | 880mV @ 40A | |||||||||||||||||||||||||||||||||||||||||||||
3KBP005M-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | unknown | WIRE | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 50V | Single Phase | 80A | 1 | 3A | 50V | 5μA @ 50V | 1.05V @ 3A | 3A | |||||||||||||||||||||||||||||||||||||||||||||||
3N246-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | unknown | WIRE | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 50V | Single Phase | 60A | 1 | 1.5A | 50V | 5μA @ 50V | 1V @ 1A | 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||
ME500806 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 2009 | /files/powerex-me500806-datasheets-0433.pdf | EAR99 | unknown | 8541.10.00.80 | NO | 125°C | 6 | Bridge Rectifier Diodes | BRIDGE, 6 ELEMENTS | 800V | 1.3V | BRIDGE RECTIFIER DIODE | 1000A | 60A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CD2320-B1800 | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Schottky | ROHS3 Compliant | 2013 | /files/bournsinc-cd2320b11000-datasheets-0645.pdf | Chip, Concave Terminals | 5.4mm | 1.16mm | 5.9mm | 16 Weeks | 4 | EAR99 | Tin | not_compliant | CD2320 | 4 | Single | 1 | 1V | 30A | 5μA | 30A | 5μA | 800V | 30A | Single Phase | 1kV | 5μA @ 800V | 1V @ 1A | 1A | ||||||||||||||||||||||||||||||||||||||||||
APT60DS20HJ | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Schottky | RoHS Compliant | 2012 | /files/microsemicorporation-apt60ds20hj-datasheets-0910.pdf | SOT-227-4, miniBLOC | 4 | 4 | EAR99 | No | UPPER | UNSPECIFIED | 4 | Single | 1 | Bridge Rectifier Diodes | 90A | 900mV | ISOLATED | SILICON | 1mA | 200V | 600A | Single Phase | 1 | 1mA @ 200V | 900mV @ 60A | |||||||||||||||||||||||||||||||||||||||||||||
APT60DS04HJ | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Schottky | RoHS Compliant | 2012 | /files/microsemicorporation-apt60ds04hj-datasheets-0911.pdf | SOT-227-4, miniBLOC | 4 | 4 | EAR99 | No | UPPER | UNSPECIFIED | 4 | Single | 1 | Bridge Rectifier Diodes | 60A | 580mV | ISOLATED | SILICON | 30mA | 45V | 600A | Single Phase | 1 | 30mA @ 45V | 580mV @ 60A | |||||||||||||||||||||||||||||||||||||||||||||
CD2320-B1200 | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Schottky | ROHS3 Compliant | 2008 | /files/bournsinc-cd2320b11000-datasheets-0645.pdf | Chip, Concave Terminals | 5.4mm | 1.16mm | 5.9mm | 4 | 16 Weeks | 4 | EAR99 | LOW POWER LOSS | Tin | not_compliant | e3 | DUAL | FLAT | NOT SPECIFIED | CD2320 | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | 1V | 30A | 5μA | SILICON | 30A | 5μA | 200V | 30A | Single Phase | 1 | 1A | 5μA @ 200V | 1V @ 1A | 1A | ||||||||||||||||||||||||||||||||
2KBP08M-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~165°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-2kbp04me451-datasheets-7907.pdf | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 60A | 1 | 2A | 800V | 5μA @ 800V | 1.1V @ 3.14A | 2A | ||||||||||||||||||||||||||||||||||||||||||||
MB354W | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw, Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-mb1510w-datasheets-0842.pdf | 4-Square, MB-W | 28.7mm | 11.23mm | 28.7mm | 4 | 4 | No | e3 | Matte Tin (Sn) | UPPER | WIRE | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 35A | 1.2V | 400A | 10μA | ISOLATED | SILICON | 10μA | 400V | 400A | Single Phase | 1 | 10μA @ 400V | 1.2V @ 17.5A | |||||||||||||||||||||||||||||||||||||
2KBP04M-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~165°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-2kbp04me451-datasheets-7907.pdf | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 400V | Single Phase | 60A | 1 | 2A | 400V | 5μA @ 400V | 1.1V @ 3.14A | 2A | ||||||||||||||||||||||||||||||||||||||||||||
G3SBA60L-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g3sba20m351-datasheets-0807.pdf | 4-SIP, GBU | GBU | Single Phase | 600V | 5μA @ 600V | 1V @ 2A | 2.3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2KBP02M-M4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~165°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-2kbp04me451-datasheets-7907.pdf | 4-SIP, KBPM | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 60A | 1 | 2A | 200V | 5μA @ 200V | 1.1V @ 3.14A | 2A | |||||||||||||||||||||||||||||||||||||||||||||
MB158W | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw, Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-mb1510w-datasheets-0842.pdf | 4-Square, MB-W | 28.7mm | 11.23mm | 28.7mm | 4 | 4 | No | e3 | Matte Tin (Sn) | UPPER | WIRE | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 15A | 1.1V | 300A | ISOLATED | SILICON | 10μA | 800V | 300A | Single Phase | 1 | 560V | 10μA @ 800V | 1.1V @ 7.5A | ||||||||||||||||||||||||||||||||||||
MB3505W | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw, Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-mb1510w-datasheets-0842.pdf | 4-Square, MB-W | 28.7mm | 11.23mm | 28.7mm | 4 | 4 | EAR99 | No | e3 | Matte Tin (Sn) | UPPER | WIRE | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 35A | 1.2V | 400A | ISOLATED | SILICON | 10μA | 50V | 400A | Single Phase | 1 | 35V | 10μA @ 50V | 1.2V @ 17.5A |
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