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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Breakdown Voltage | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BU10085S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 120A | 1 | 3.2A | 800V | 5μA @ 800V | 1.05V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||||||
| GSIB2040-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gsib2080e345-datasheets-8918.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | 4 | 7 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 3.5A | 240A | 10μA | ISOLATED | SILICON | 10μA | 400V | Single Phase | 1 | 400V | 10μA @ 400V | 1V @ 10A | ||||||||||||||||||||||||||||||||||||
| GSIB15A80N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib15a80nm345-datasheets-0581.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | 4 | UL RECOGNIZED | unknown | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | ISOLATED | SILICON | 800V | Single Phase | 200A | 1 | 3.5A | 800V | 10μA @ 800V | 1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||||||||
| GBU2502-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbu2508hf-datasheets-0576.pdf | 4-SIP, GBU | 4 | 1 Weeks | UL RECOGNIZED | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 350A | 1 | 4.2A | 200V | 5μA @ 200V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||
| GBU2510-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbu2508hf-datasheets-0576.pdf | 4-SIP, GBU | 4 | 1 Weeks | UL RECOGNIZED | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 350A | 1 | 4.2A | 1kV | 5μA @ 1000V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||
| GSIB15A60N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib15a80nm345-datasheets-0581.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 200A | 1 | 3.5A | 600V | 10μA @ 600V | 1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||||||
| GSIB660N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib640nm345-datasheets-0533.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 180A | 1 | 2.8A | 600V | 10μA @ 600V | 950mV @ 3A | 6A | |||||||||||||||||||||||||||||||||||||||||
| BU15065S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3.4A | 1.05V | 200A | 5μA | ISOLATED | SILICON | 200A | 5μA | 600V | Single Phase | 15A | 1 | 5μA @ 600V | 1.05V @ 6A | ||||||||||||||||||||||||||||||
| GBU1508-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/comchiptechnology-gbu1510g-datasheets-5208.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 240A | 1 | 15A | 800V | 10μA @ 800V | 1V @ 7.5A | 3.2A | ||||||||||||||||||||||||||||||||||||||||||
| DF1508S | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | /files/diodesincorporated-df1504st-datasheets-9341.pdf | 4-SMD, Gull Wing | 8.51mm | 3.4mm | 6.5mm | 4 | 9 Weeks | 299.00242mg | 4 | no | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | 260 | DF1508 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 1.1V | 50A | SILICON | 10μA | 800V | 50A | Single Phase | 1 | 580V | 10μA @ 800V | 1.1V @ 1.5A | 1.5A | |||||||||||||||||||||||||||||||
| GBU1501-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu1510g-datasheets-5208.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 240A | 1 | 15A | 100V | 10μA @ 100V | 1V @ 7.5A | 3.2A | ||||||||||||||||||||||||||||||||||||||||||
| GSIB2060-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gsib2080e345-datasheets-8918.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 3.5A | 1V | 240A | 10μA | ISOLATED | 600V | SILICON | 10μA | 600V | Single Phase | 20A | 1 | 10μA @ 600V | 1V @ 10A | |||||||||||||||||||||||||||||||||
| KBU2506-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/comchiptechnology-kbu2510g-datasheets-0906.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 400A | 1 | 25A | 600V | 10μA @ 600V | 1.1V @ 12.5A | 3.6A | |||||||||||||||||||||||||||||||||||||||||
| TS40P07GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 20A | 40A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU2501-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu2510g-datasheets-0906.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 400A | 1 | 25A | 100V | 10μA @ 100V | 1.1V @ 12.5A | 3.6A | |||||||||||||||||||||||||||||||||||||||||
| GSIB640N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib640nm345-datasheets-0533.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | 4 | UL RECOGNIZED | unknown | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | 950mV | SILICON | 180A | Single Phase | 1 | 2.8A | 400V | 10μA @ 400V | 950mV @ 3A | 6A | |||||||||||||||||||||||||||||||||||||||||||
| GBU2508-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbu2508hf-datasheets-0576.pdf | 4-SIP, GBU | 4 | 1 Weeks | UL RECOGNIZED | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 350A | 1 | 4.2A | 800V | 5μA @ 800V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ2510-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbj2510hf-datasheets-0536.pdf | 4-SIP, GBJ | 1 Weeks | Single Phase | 1kV | 5μA @ 1000V | 1V @ 12.5A | 3.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU2506-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbu2508hf-datasheets-0576.pdf | 4-SIP, GBU | 4 | 1 Weeks | UL RECOGNIZED | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 350A | 1 | 4.2A | 600V | 5μA @ 600V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||
| TS40P06GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 20A | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-2KBB10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-vs2kbb20r-datasheets-9830.pdf | 2A | 4-SIP, 2KBB | 17mm | 14.5mm | 6mm | 4 | 14 Weeks | Unknown | 4 | EAR99 | No | WIRE | Single | 1 | 1.9A | 1.1V | 52A | 500μA | SILICON | 52A | 10μA | 100V | 52A | Single Phase | 1 | 10μA @ 100V | 1.1V @ 1.9A | |||||||||||||||||||||||||||||||||||||
| GSIB680N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib640nm345-datasheets-0533.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 180A | 1 | 2.8A | 800V | 10μA @ 800V | 950mV @ 3A | 6A | |||||||||||||||||||||||||||||||||||||||||
| TS35P07GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 17.5A | 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF1510S | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Bulk | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | 2012 | /files/diodesincorporated-df1504st-datasheets-9341.pdf | 4-SMD, Gull Wing | 8.51mm | 3.4mm | 6.5mm | 4 | 9 Weeks | 299.00242mg | 4 | no | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 1.1V | 50A | SILICON | 10μA | 1kV | 50A | Single Phase | 1 | 700V | 10μA @ 1000V | 1.1V @ 1.5A | 1.5A | |||||||||||||||||||||||||||||||
| VS-2KBP005 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs2kbp06-datasheets-9803.pdf | 2A | D | 17.5mm | 15mm | 6.8mm | 14 Weeks | Unknown | 4 | No | Single | 2A | 1V | 63A | 10μA | 63A | 10μA | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ2506-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbj2510hf-datasheets-0536.pdf | 4-SIP, GBJ | 1 Weeks | Single Phase | 600V | 5μA @ 600V | 1V @ 12.5A | 3.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS40P05GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 20A | 40A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DFB2510 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-dfb2580-datasheets-7221.pdf | 4-SIP, TS-6P | 4 | 11 Weeks | 7g | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | UL RECOGNIZED | No | e3 | Tin (Sn) | Single | 1 | Bridge Rectifier Diodes | 25A | 1.1V | 300A | ISOLATED | SILICON | 350A | 10μA | 100V | 350A | Single Phase | 1 | 10μA @ 100V | 1.1V @ 25A | ||||||||||||||||||||||||||||||||||||
| TS40P07GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 20A | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS35P06GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 17.5A | 35A |
