Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Moisture Sensitivity Level (MSL) | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Power - Max | Max Repetitive Reverse Voltage (Vrrm) | Collector Emitter Breakdown Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
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IFS100B12N3E4_B39 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 175°C TJ | 1 (Unlimited) | RoHS Compliant | 2009 | /files/infineontechnologies-ifs100b12n3e4b39-datasheets-2726.pdf | Module | 34 | no | EAR99 | UL RECOGNIZED | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 34 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X34 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 515W | 515W | 210 ns | Standard | 1200V | 100A | 610 ns | 2.1 V | 20V | 1mA | 2.1V @ 15V, 100A | Trench Field Stop | Yes | 6.3nF @ 25V | |||||||||||||||||||
FD600R12KF4NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | 1997 | /files/infineontechnologies-fd600r12kf4nosa1-datasheets-2681.pdf | 5 | no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X5 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 600A | 1200V | 800 ns | 1150 ns | ||||||||||||||||||||||||||||||||||
VS-GA100TS60SF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vsga100ts60sfpbf-datasheets-2298.pdf | INT-A-Pak | 7 | EAR99 | 780W | 16.25nF | Half Bridge | 780W | 600V | 1.28V | 220A | Standard | 1mA | 1.28V @ 15V, 100A | PT | No | 16.25nF @ 30V | ||||||||||||||||||||||||||||||||||||||
IRG5K150HF12B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 62 Module | 1.06kW | 19nF | Half Bridge | 1060W | 1.2kV | 2.6V | 300A | Standard | 1200V | 2mA | 2.6V @ 15V, 150A | No | 19nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
BSM75GB170DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/infineontechnologies-bsm75gb170dn2hosa1-datasheets-2689.pdf | Module | Lead Free | 7 | 34 | no | EAR99 | Not Halogen Free | 625W | UPPER | UNSPECIFIED | 7 | Dual | 2 | R-XUFM-X7 | 11nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 625W | 1.7kV | 550 ns | 3.9V | 110A | Standard | 1700V | 740 ns | 3.9V @ 15V, 75A | No | 11nF @ 25V | ||||||||||||||||||||||
VS-GP250SA60S | Vishay Semiconductor Diodes Division | $23.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgp250sa60s-datasheets-2692.pdf | SOT-227-4, miniBLOC | 4 | 16 Weeks | 4 | EAR99 | UL APPROVED, LOWE CONDUCTION LOSS | 893W | UPPER | UNSPECIFIED | 1 | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 893W | 600V | 370 ns | 1.3V | 380A | Standard | 1575 ns | 100μA | 1.3V @ 15V, 100A | PT, Trench | No | ||||||||||||||||||||||||||
BSM100GB170DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/infineontechnologies-bsm100gb170dn2hosa1-datasheets-2695.pdf | Module | 1kW | Module | 16nF | Half Bridge | 1000W | 1.7kV | 3.9V | 145A | Standard | 1700V | 145A | 1mA | 3.9V @ 15V, 100A | No | 16nF @ 25V | ||||||||||||||||||||||||||||||||||||||
FS215R04A1E3DBOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2006 | Contains Lead | 26 Weeks | yes | EAR99 | Not Halogen Free | 400V | |||||||||||||||||||||||||||||||||||||||||||||||||||
FZ800R33KL2CB5NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Chassis Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | /files/infineontechnologies-fz800r33kl2cb5nosa1-datasheets-2699.pdf | Module | 7 | 9.8kW | UPPER | UNSPECIFIED | 2 | R-XUFM-X7 | 97nF | SILICON | COMPLEX | ISOLATED | POWER CONTROL | N-CHANNEL | 9800W | 3.3kV | 1400 ns | 3.65V | 1.5kA | Standard | 3300V | 1500A | 4250 ns | 5mA | 3.65V @ 15V, 800A | No | 97nF @ 25V | |||||||||||||||||||||||||||
VS-GA200HS60S1 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsga200hs60s1pbf-datasheets-2354.pdf | INT-A-Pak | 7 | EAR99 | 830W | 32.5nF | Half Bridge | 830W | 600V | 1.21V | 480A | Standard | 1mA | 1.21V @ 15V, 200A | No | 32.5nF @ 30V | ||||||||||||||||||||||||||||||||||||||
FS100R12KT4B11BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2012 | /files/infineontechnologies-fs100r12kt4b11bosa1-datasheets-2703.pdf | Module | Contains Lead | Not Halogen Free | Three Phase Inverter | 515W | Standard | 1200V | 100A | 1mA | 2.1V @ 15V, 100A | Trench Field Stop | No | 6.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||
IRG5U300SD12B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 62 Module | 2.17kW | 38nF | Single | 2170W | 1.2kV | 3.5V | 480A | Standard | 1200V | 3mA | 3.5V @ 15V, 300A | No | 38nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
FZ1200R33KL2CB5NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | Module | 9 | EAR99 | NO | UPPER | UNSPECIFIED | 3 | R-XUFM-X9 | SILICON | COMPLEX | ISOLATED | POWER CONTROL | N-CHANNEL | 14500W | 1400 ns | Standard | 3300V | 2300A | 4250 ns | 5mA | 3.65V @ 15V, 1200A | No | 145nF @ 25V | ||||||||||||||||||||||||||||||||
VS-GP100TS60SFPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgp100ts60sfpbf-datasheets-2629.pdf | INT-A-Pak | 12 Weeks | 7 | EAR99 | 781W | Dual | Half Bridge | 781W | 600V | 1.34V | 337A | Standard | 150μA | 1.34V @ 15V, 100A | PT, Trench | No | |||||||||||||||||||||||||||||||||||||
FD800R33KL2CKB5NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | Module | 9.8kW | 97nF | Dual Brake Chopper | 9800W | 3.3kV | 3.65V | 1.5kA | Standard | 3300V | 1500A | 5mA | 3.65V @ 15V, 800A | No | 97nF @ 25V | |||||||||||||||||||||||||||||||||||||||
IRG7T150HF12B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 62 Module | 910W | 20.2nF | Half Bridge | 910W | 1.2kV | 2.2V | 300A | Standard | 1200V | 2mA | 2.2V @ 15V, 150A | No | 20.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
BSM150GB170DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/infineontechnologies-bsm150gb170dn2hosa1-datasheets-2632.pdf | Module | 7 | yes | 1.25kW | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | 20nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 1250W | 1.7kV | 720 ns | 3.9V | 220A | Standard | 1700V | 1310 ns | 1.5mA | 3.9V @ 15V, 150A | No | 20nF @ 25V | ||||||||||||||||||||||||||
FZ800R33KL2CNOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Chassis Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | Module | 7 | no | 9.8kW | UPPER | UNSPECIFIED | 7 | 2 | Insulated Gate BIP Transistors | R-XUFM-X7 | 97nF | SILICON | COMPLEX | ISOLATED | N-CHANNEL | 9800W | 3.3kV | 1700 ns | 3.65V | 1.5kA | Standard | 3300V | 1500A | 4250 ns | 20V | 5mA | 3.65V @ 15V, 800A | No | 97nF @ 25V | |||||||||||||||||||||||||
FZ1200R33KL2CNOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | Module | 9 | no | NO | UPPER | UNSPECIFIED | 9 | 3 | Insulated Gate BIP Transistors | R-XUFM-X9 | SILICON | COMPLEX | ISOLATED | N-CHANNEL | 14500W | 14500W | 1700 ns | Standard | 3300V | 2300A | 4250 ns | 3.65 V | 20V | 5mA | 3.65V @ 15V, 1200A | No | 145nF @ 25V | ||||||||||||||||||||||||||||
IRG7T75HF12A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | /files/infineontechnologies-irg7t75hf12a-datasheets-2639.pdf | POWIR® 34 Module | 450W | 10.4nF | Half Bridge | 450W | 1.2kV | 2.2V | 150A | Standard | 1200V | 1mA | 2.2V @ 15V, 75A | No | 10.4nF @ 25V | |||||||||||||||||||||||||||||||||||||||
FP100R06KE3_B16 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GP300TD60S | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgp300td60s-datasheets-2643.pdf | Dual INT-A-PAK (3 + 8) | 14 Weeks | 7 | EAR99 | 1.136kW | Dual | Half Bridge | 1136W | 600V | 1.45V | 580A | Standard | 150μA | 1.45V @ 15V, 300A | PT, Trench | No | |||||||||||||||||||||||||||||||||||||
IRG7U150HF12B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 62 Module | 900W | 14nF | Half Bridge | 900W | 1.2kV | 2V | 300A | Standard | 1200V | 1mA | 2V @ 15V, 150A | No | 14nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
IRG5W50HF06A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 34 Module | 260W | 2.6nF | Half Bridge | 260W | 600V | 2.7V | 75A | Standard | 1mA | 2.7V @ 15V, 50A | No | 2.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||
IRG5K35HF12A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 34 Module | 280W | 3.4nF | Half Bridge | 280W | 1.2kV | 2.6V | 70A | Standard | 1200V | 1mA | 2.6V @ 15V, 35A | No | 3.4nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
FF800R12KL4CNOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | 2013 | /files/infineontechnologies-ff800r12kl4cnosa1-datasheets-2650.pdf | 10 | no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 10 | 150°C | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X10 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1250A | 1200V | 460 ns | 1210 ns | ||||||||||||||||||||||||||||||||||
BSM50GB170DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/infineontechnologies-bsm50gb170dn2hosa1-datasheets-2656.pdf | Module | 7 | 14 Weeks | no | compliant | NO | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 500W | 500 ns | Standard | 1700V | 72A | 740 ns | 3.9V @ 15V, 50A | No | 8nF @ 25V | |||||||||||||||||||||||||||||
IRG7U50HF12A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 34 Module | 310W | 6nF | Half Bridge | 310W | 1.2kV | 2V | 100A | Standard | 1200V | 1mA | 2V @ 15V, 50A | No | 6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
NXH80T120L2Q0SG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/onsemiconductor-nxh80t120l2q0sg-datasheets-2659.pdf | Module | Lead Free | 50 Weeks | yes | 146W | 1.99nF | T-Type | 146W | 1.2kV | 2.8V | 65A | Standard | 1200V | 100μA | 2.8V @ 15V, 80A | Yes | 1.99nF @ 20V | ||||||||||||||||||||||||||||||||||||
BSM300GA170DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/infineontechnologies-bsm300ga170dn2hosa1-datasheets-2624.pdf | Module | 2.5kW | Single | Module | Single | 2500W | 1.7kV | 3.9V | 440A | Standard | 1700V | 440A | 3mA | 3.9V @ 15V, 300A | No |
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