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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power - Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| IPG20N04S4L07AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n04s4l07aatma1-datasheets-2949.pdf | 8-PowerVDFN | Contains Lead | 12 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | 65W | NOT SPECIFIED | Dual | NOT SPECIFIED | 4ns | 25 ns | 50 ns | 20A | 16V | 40V | 65W | 2 N-Channel (Dual) | 3980pF @ 25V | 7.2m Ω @ 17A, 10V | 2.2V @ 30μA | 50nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ215CHXTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-bsz215chxtma1-datasheets-2701.pdf | 8-PowerTDFN | Lead Free | 5 | 18 Weeks | 8 | yes | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | 2.5W | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N5 | 3.2A | -20V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 5.1A | 20A | 0.055Ohm | 11 mJ | N and P-Channel Complementary | 419pF @ 10V | 55m Ω @ 5.1A, 4.5V | 1.4V @ 110μA | 5.1A 3.2A | 2.8nC @ 4.5V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||
| BSG0811NDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsg0811ndatma1-datasheets-2984.pdf | 8-PowerTDFN | Contains Lead | 7 | 26 Weeks | 8 | yes | not_compliant | Halogen Free | 2.5W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N7 | 41A | 25V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.5W | 19A | 160A | 0.004Ohm | 30 mJ | 2 N-Channel (Dual) Asymmetrical | 1100pF @ 12V | 3m Ω @ 20A, 10V | 2V @ 250μA | 19A 41A | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||
| FDW2507N | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdw2507n-datasheets-2813.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | unknown | e3 | TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.1W | 7.5A | 0.019Ohm | 2 N-Channel (Dual) | 2152pF @ 10V | 19m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 7.5A | 28nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FDMS7606 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-fdms7606-datasheets-2815.pdf | 8-PowerWDFN | Power56 | 30V | 1W | 2 N-Channel (Dual) | 1400pF @ 15V | 11.4mOhm @ 11.5A, 10V | 3V @ 250μA | 11.5A 12A | 22nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S4L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipg20n04s4l11atma1-datasheets-2651.pdf | 8-PowerVDFN | Contains Lead | 6 | 12 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 41W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 41W | 2 | R-PDSO-F6 | 5 ns | 2ns | 15 ns | 25 ns | 20A | 16V | 40V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.0116Ohm | 2 N-Channel (Dual) | 1990pF @ 25V | 11.6m Ω @ 17A, 10V | 2.2V @ 15μA | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| UPA1874BGR-9JG-E1-A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-upa1874bgr9jge1a-datasheets-2676.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 30V | 2W | 2 N-Channel (Dual) | 930pF @ 10V | 14mOhm @ 4A, 4.5V | 1.5V @ 1mA | 8A | 10nC @ 4V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO211PNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-bso211pntma1-datasheets-2678.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | 2W | GULL WING | BSO211 | 2 | 7.8 ns | 10.6ns | 23.3 ns | 26.3 ns | 4.7A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.067Ohm | 2 P-Channel (Dual) | 920pF @ 15V | 67m Ω @ 4.7A, 4.5V | 1.2V @ 25μA | 23.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| FDS6993 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds8934a-datasheets-2441.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | TIN | YES | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V 12V | 30V | METAL-OXIDE SEMICONDUCTOR | 900mW | 4.3A | 20A | 0.055Ohm | 2 P-Channel (Dual) | 530pF @ 15V | 55m Ω @ 4.3A, 10V | 3V @ 250μA | 4.3A 6.8A | 7.7nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7389TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7389trpbf-datasheets-2611.pdf | 7.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 29mOhm | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | Tin | No | 2.5W | DUAL | GULL WING | IRF7389PBF | 1 | 2.5W | 2 | 13ns | 32 ns | 34 ns | 7.3A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 1V | 30A | 30V | N and P-Channel | 650pF @ 25V | 1 V | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 33nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| IRF7904TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf7904pbf-datasheets-6690.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 16.2MOhm | 8 | EAR99 | Tin | No | e3 | 2W | GULL WING | IRF7904PBF | Dual | 2W | 2 | FET General Purpose Power | 11A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 1.4W 2W | 30V | 2 N-Channel (Dual) | 910pF @ 15V | 16.2m Ω @ 7.6A, 10V | 2.25V @ 25μA | 7.6A 11A | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| FDZ2554P | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-fdz2554p-datasheets-2723.pdf | 18-WFBGA | 18 | no | unknown | e2 | TIN SILVER | YES | BOTTOM | BALL | 260 | 18 | NOT SPECIFIED | 2 | COMMERCIAL | R-PBGA-B18 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2.1W | 6.5A | 20A | 0.028Ohm | 2 P-Channel (Dual) | 1900pF @ 10V | 28m Ω @ 6.5A, 4.5V | 1.5V @ 250μA | 6.5A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF9910TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf9910trpbf-datasheets-2746.pdf | 20V | 10A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 13.4MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF9910PBF | Dual | 2W | 2 | FET General Purpose Power | 10A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 33 mJ | 20V | 2 N-Channel (Dual) | 900pF @ 10V | 2.55 V | 9.3m Ω @ 12A, 10V | 2.55V @ 250μA | 10A 12A | 11nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| FDS4885C | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds4885c-datasheets-2756.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 900mW | 7.5A | 20A | 0.022Ohm | N and P-Channel | 900pF @ 20V | 22m Ω @ 7.5A, 10V | 5V @ 250μA | 7.5A 6A | 21nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| FDS6984S | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds8926a-datasheets-2371.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 900mW | 8.5A | 30A | 0.019Ohm | 2 N-Channel (Dual) | 1233pF @ 15V | 19m Ω @ 8.5A, 10V | 3V @ 250μA | 5.5A 8.5A | 12nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| BSZ15DC02KDHXTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz15dc02kdhxtma1-datasheets-2625.pdf | 8-PowerTDFN | Lead Free | 5 | 18 Weeks | 8 | yes | EAR99 | AVALANHE RATED | Halogen Free | 2.5W | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N5 | 3.2A | 12V | 20V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.5W | 5.1A | 20A | 0.055Ohm | 11 mJ | N and P-Channel Complementary | 419pF @ 10V | 55m Ω @ 5.1A, 4.5V | 1.4V @ 110μA | 5.1A 3.2A | 2.8nC @ 4.5V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||
| UPA2754GR-E2-A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-upa2754gre2a-datasheets-2792.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-PSOP | 30V | 2W | 2 N-Channel (Dual) | 1940pF @ 10V | 14.5mOhm @ 5.5A, 4.5V | 1.5V @ 1mA | 11A | 25nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDR8508P | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds4885c-datasheets-2757.pdf | 8-LSOP (0.130, 3.30mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 800mW | 3A | 0.052Ohm | 2 P-Channel (Dual) | 750pF @ 15V | 52m Ω @ 3A, 10V | 3V @ 250μA | 3A | 12nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FW907-TL-E | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-fw907tle-datasheets-2623.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP | 30V | 2.5W | N and P-Channel | 1000pF @ 10V | 17mOhm @ 10A, 10V | 10A 8A | 17nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7380TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf7380trpbf-datasheets-2632.pdf | 80V | 3.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 73MOhm | 8 | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | IRF7380PBF | Dual | 30 | 2W | 2 | FET General Purpose Power | 9 ns | 10ns | 17 ns | 41 ns | 3.6A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4V | 75 mJ | 80V | 2 N-Channel (Dual) | 660pF @ 25V | 4 V | 73m Ω @ 2.2A, 10V | 4V @ 250μA | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||
| IRL6372TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irl6372trpbf-datasheets-2513.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | No SVHC | 17.9MOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRL6372PBF | Dual | 2W | 2 | FET General Purpose Power | 5.9 ns | 13ns | 15 ns | 34 ns | 8.1A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 65A | 30V | 2 N-Channel (Dual) | 1020pF @ 25V | 1.1 V | 17.9m Ω @ 8.1A, 4.5V | 1.1V @ 10μA | 11nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| HAT2218R-EL-E | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-hat2218rele-datasheets-2489.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOP | 30V | 1.5W | 2 N-Channel (Dual) Asymmetrical | 630pF @ 10V | 24mOhm @ 3.75A, 10V | 7.5A 8A | 4.6nC @ 4.5V | Logic Level Gate, 4.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2756GR-E1-AT | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-upa2756gre1at-datasheets-2491.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-PSOP | 60V | 2W | 2 N-Channel (Dual) | 260pF @ 10V | 105mOhm @ 2A, 10V | 2.5V @ 1mA | 4A | 6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDW2501N | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdw9926nz-datasheets-3448.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | unknown | e3 | TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 600mW | 6A | 0.018Ohm | 2 N-Channel (Dual) | 1290pF @ 10V | 18m Ω @ 6A, 4.5V | 1.5V @ 250μA | 6A | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| UPA2751GR-E1-AT | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-upa2751gre1at-datasheets-2522.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-PSOP | 30V | 2W | 2 N-Channel (Dual) | 1040pF @ 10V | 15.5mOhm @ 4.5A, 10V | 2.5V @ 1mA | 9A 8A | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3616S | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-fdms3616s-datasheets-2524.pdf | 8-PowerTDFN | Power56 | 25V | 1W | 2 N-Channel (Dual) Asymmetrical | 1765pF @ 13V | 6.6mOhm @ 16A, 10V | 2.5V @ 250μA | 16A 18A | 27nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMDF2P02ER2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-mmdf2p02er2-datasheets-2526.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | no | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | TIN LEAD | YES | GULL WING | 240 | 8 | 30 | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 2W | 2.5A | 13A | 0.25Ohm | 245 mJ | 2 P-Channel (Dual) | 475pF @ 16V | 250m Ω @ 2A, 10V | 3V @ 250μA | 2.5A | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| NTUD3127CT5G | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ntud3127ct5g-datasheets-2548.pdf | SOT-963 | 6 | yes | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | FLAT | 260 | 6 | 40 | 2 | COMMERCIAL | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 125mW | 0.16A | 3Ohm | 2.2 pF | N and P-Channel | 9pF @ 15V | 3 Ω @ 100mA, 4.5V | 1V @ 250μA | 160mA 140mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7303TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7303trpbf-datasheets-2398.pdf | 30V | 4.9A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 50mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | IRF7303PBF | Dual | 30 | 2W | 2 | 6.8 ns | 21ns | 7.7 ns | 22 ns | 4.9A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 71 ns | 30V | 2 N-Channel (Dual) | 520pF @ 25V | 1 V | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||
| UPA2792AGR-E1-AT | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-upa2792agre1at-datasheets-2569.pdf | 8-PowerSOIC (0.173, 4.40mm Width) | 8-SOP | 30V | 2W | N and P-Channel | 2200pF @ 10V | 12.5mOhm @ 5A, 10V | 10A | 42nC @ 10V | Logic Level Gate |
