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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI4200DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4200dyt1ge3-datasheets-0744.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 13 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | 8 | 2 | Dual | 30 | 2W | 2 | 10ns | 8 ns | 7.3A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.8W | 8A | 25V | 2 N-Channel (Dual) | 415pF @ 13V | 25m Ω @ 7.3A, 10V | 2.2V @ 250μA | 8A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI1023CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1023cxt1ge3-datasheets-1220.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 220mW | FLAT | 260 | 6 | 30 | 220mW | 2 | Other Transistors | 9 ns | 10ns | 8 ns | 10 ns | 450mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.45A | 1.038Ohm | 2 P-Channel (Dual) | 45pF @ 10V | 756m Ω @ 350mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| EFC4619R-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/onsemiconductor-efc4619rtr-datasheets-1235.pdf | 4-XFBGA, FCBGA | Lead Free | 23 Weeks | 4 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | Halogen Free | 1.6W | FET General Purpose Power | 340 ns | 440ns | 22.4 μs | 24.4 μs | 6A | 12V | 24V | METAL-OXIDE SEMICONDUCTOR | 6A | 23mOhm | 2 N-Channel (Dual) | 21.7nC @ 4.5V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTMC8E280LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2008 | /files/panasonicelectroniccomponents-mtmc8e280lbf-datasheets-1025.pdf | 8-SMD, Flat Lead | 1W | MTMC8E28 | WMini8-F1 | 1.5nF | 7A | 20V | 1W | 2 N-Channel (Dual) | 1500pF @ 10V | 21mOhm @ 2A, 4.5V | 1.3V @ 1mA | 7A | Standard | 21 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX138AKSX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-nx138aksx-datasheets-0887.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | IEC-60134 | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 325mW | 0.17A | 2 N-Channel (Dual) | 20pF @ 30V | 4.5 Ω @ 170mA, 10V | 1.5V @ 250μA | 170mA Ta | 1.4nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6662-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/onsemiconductor-mch6662tlw-datasheets-1039.pdf | 6-SMD, Flat Leads | Lead Free | 6 Weeks | 6 | ACTIVE (Last Updated: 2 days ago) | yes | e6 | Tin/Bismuth (Sn/Bi) | 800mW | NOT SPECIFIED | NOT SPECIFIED | 5.1 ns | 11ns | 12 ns | 14.5 ns | 2A | 10V | 20V | 2 N-Channel (Dual) | 128pF @ 10V | 160m Ω @ 1A, 4.5V | 1.3V @ 1mA | 1.8nC @ 4.5V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138BKSH | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/nexperiausainc-bss138bksh-datasheets-0821.pdf | 6-TSSOP, SC-88, SOT-363 | 4 Weeks | 60V | 445mW | 2 N-Channel (Dual) | 56pF @ 10V | 1.6 Ω @ 320mA, 10V | 1.6V @ 250μA | 320mA Ta | 0.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIL2308-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/microcommercialco-sil2308tp-datasheets-1122.pdf | SOT-23-6 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | N and P-Channel | 800pF 405pF @ 8V 10V | 38m Ω @ 4.5A, 4.5V, 90m Ω @ 500mA, 4.5V | 1V @ 250μA | 5A 4A | 11nC @ 4.5V, 12nC @ 2.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB95XNE2X | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmdpb95xne2x-datasheets-0638.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | IEC-60134 | YES | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 510mW Ta | 2.7A | 0.099Ohm | 2 N-Channel (Dual) | 258pF @ 15V | 99m Ω @ 2.8A, 4.5V | 1.25V @ 250μA | 2.7A Ta | 4.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI1967DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1967dht1e3-datasheets-1153.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1967 | 6 | Dual | 30 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 27 ns | 15 ns | 1.3A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1A | 0.49Ohm | 2 P-Channel (Dual) | 110pF @ 10V | 490m Ω @ 910mA, 4.5V | 1V @ 250μA | 4nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| DMN2991UDA-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn2991uda7b-datasheets-1002.pdf | 6-SMD, No Lead | 24 Weeks | 20V | 310mW Ta | 2 N-Channel (Dual) | 21.5pF @ 16V | 990m Ω @ 100mA, 4.5V | 1V @ 250μA | 450mA Ta | 350pC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N357R,LF | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 60V | 1.5W Ta | 2 N-Channel (Dual) | 60pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 650mA Ta | 1.5nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDXB600UNEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmdxb600unez-datasheets-1162.pdf | 6-XFDFN Exposed Pad | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 265mW | 6 | 2 | 5.6 ns | 9.2ns | 51 ns | 19 ns | 600mA | 8V | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 265mW | 2 N-Channel (Dual) | 21.3pF @ 10V | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 0.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| DMN601VKQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmn601vkq7-datasheets-0940.pdf | SOT-563, SOT-666 | 600μm | 16 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 250mW | NOT SPECIFIED | 2 | NOT SPECIFIED | 250mW | 150°C | 305mA | 20V | 60V | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC25D0UVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmc25d0uvt7-datasheets-1134.pdf | SOT-23-6 Thin, TSOT-23-6 | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | 1.2W | NOT SPECIFIED | NOT SPECIFIED | 3.2A | 25V 30V | N and P-Channel | 26.2pF @ 10V | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 400mA 3.2A | 0.7nC @ 8V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMCXB900UELZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmcxb900uelz-datasheets-0906.pdf | 6-XFDFN Exposed Pad | 6 | 4 Weeks | IEC-60134 | 380mW | DUAL | NO LEAD | 6 | 2 | R-PDSO-N6 | 600mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 380mW | 0.6A | 0.62Ohm | N and P-Channel Complementary | 21.3pF @ 10V | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 0.7nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI1926DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1926dlt1ge3-datasheets-1035.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 3 | yes | EAR99 | Tin | No | e3 | 510mW | GULL WING | 260 | 6 | 30 | 2 | FET General Purpose Power | R-PDSO-G6 | 6.5 ns | 12ns | 14 ns | 13 ns | 370mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 18.5pF @ 30V | 1.4 Ω @ 340mA, 10V | 2.5V @ 250μA | 1.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SSM6L35FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 16 Weeks | unknown | 150mW | SSM6L35 | 100mA | 20V | N and P-Channel | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | 180mA 100mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHC21025,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/nexperiausainc-phc21025118-datasheets-7306.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | YES | DUAL | GULL WING | 8 | 2W | 2 | Other Transistors | Not Qualified | 3.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | MS-012AA | N and P-Channel | 250pF @ 20V | 100m Ω @ 2.2A, 10V | 2.8V @ 1mA | 3.5A 2.3A | 30nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| EM6K6T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-em6k6t2r-datasheets-1048.pdf | SOT-563, SOT-666 | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | e2 | TIN COPPER | 150mW | FLAT | 260 | *K6 | 6 | Dual | 10 | 150mW | 2 | FET General Purpose Power | 5 ns | 10ns | 10 ns | 15 ns | 300mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.3A | 1.4Ohm | 20V | 2 N-Channel (Dual) | 25pF @ 10V | 1 Ω @ 300mA, 4V | 1V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| PMDXB950UPELZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmdxb950upelz-datasheets-0931.pdf | 6-XFDFN Exposed Pad | 6 | 4 Weeks | IEC-60134 | 380mW | NO LEAD | 6 | 2 | R-PDSO-N6 | 500mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 380mW | 0.5A | 2 P-Channel (Dual) | 43pF @ 10V | 1.4 Ω @ 500mA, 4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMGD290UCEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmgd290uceax-datasheets-0943.pdf | 6-TSSOP, SC-88, SOT-363 | 4 Weeks | 6 | Tin | No | 280mW | 6 | 2 | Dual | 18 ns | 30ns | 72 ns | 80 ns | 500mA | 8V | 20V | N and P-Channel | 83pF @ 10V | 380m Ω @ 500mA, 4.5V | 1.3V @ 250μA | 725mA 500mA | 0.68nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIX3134K-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/microcommercialco-six3134ktp-datasheets-0948.pdf | SOT-563, SOT-666 | 12 Weeks | 260 | 10 | 20V | 150mW | 2 N-Channel (Dual) | 120pF @ 16V | 380m Ω @ 650mA, 4.5V | 1.1V @ 250μA | 750mA | 20nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX7002BKXBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-nx7002bkxbz-datasheets-0967.pdf | 6-XFDFN Exposed Pad | 6 | 4 Weeks | LOGIC LEVEL COMPATIBLE | IEC-60134 | 285mW | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | R-PDSO-N6 | 260mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 285mW | 0.33A | 3.2Ohm | 2 N-Channel (Dual) | 23.6pF @ 10V | 2.8 Ω @ 200mA, 10V | 2.1V @ 250μA | 1nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| DMP2200UDW-13 | Diodes Incorporated | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp2200udw13-datasheets-0928.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | 450mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 900mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 450mW | 0.9A | 0.26Ohm | 2 P-Channel (Dual) | 184pF @ 10V | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 2.1nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN3AM832TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-zxmn3am832ta-datasheets-0984.pdf | 30V | 3A | 3mm | 1mm | 2mm | Lead Free | 8 | 299.994654mg | 120mOhm | 8 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | 1.13W | DUAL | FLAT | 260 | 10 | 2 | 40 | 3W | 2 | FET General Purpose Power | Not Qualified | 190pF | 1.7 ns | 2.3ns | 2.9 ns | 6.6 ns | 3.7A | 20V | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 180mOhm | 30V | 120 mΩ | ||||||||||||||||||||||||||||||||||||||
| NTJD4152PT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntjd4152pt1g-datasheets-3403.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 11 Weeks | EAR99 | e3 | Tin (Sn) | YES | 272mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 880mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 272mW | 0.88A | 0.26Ohm | 2 P-Channel (Dual) | 155pF @ 20V | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 2.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4822SSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmg4822ssdq13-datasheets-0118.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.42W Ta | 2 N-Channel (Dual) | 478.9pF @ 16V | 21m Ω @ 8.5A, 10V | 3V @ 250μA | 10A Ta | 5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EFC4626R-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-efc4626rtr-datasheets-0919.pdf | 4-XFBGA | Lead Free | 10 Weeks | 4 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 1.4W | NOT SPECIFIED | 2 | NOT SPECIFIED | FET General Purpose Power | 20 ns | 350ns | 38.4 μs | 22 μs | 10V | 24V | METAL-OXIDE SEMICONDUCTOR | 5A | 37.5mOhm | 2 N-Channel (Dual) Common Drain | 7.5nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf916dtt1ge3-datasheets-0522.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.4W Ta 26.6W Tc 4W Ta 60W Tc | 2 N-Channel (Dual) | 1060pF @ 15V 4320pF @ 15V | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 23A Ta 40A Tc | 22nC @ 10V, 95nC @ 10V | Standard |
