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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SSM6N36TU,LF | Toshiba Semiconductor and Storage | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 500mW Ta | 2 N-Channel (Dual) | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA Ta | 1.23nC @ 4V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3686S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms3686s-datasheets-9580.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.1mm | Lead Free | 6 | 18 Weeks | 90mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | 2.5W | 2 | FET General Purpose Power | R-PDSO-N6 | 23 ns | 23A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 13A | 30V | 2 N-Channel (Dual) Asymmetrical | 1785pF @ 10V | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 13A 23A | 29nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SSM6N16FE,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 150mW Ta | 2 N-Channel (Dual) | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2101ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/epc-epc2101engrt-datasheets-9612.pdf | Die | 22 Weeks | Die | 60V | 2 N-Channel (Half Bridge) | 300pF @ 30V | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 9.5A 38A | 2.7nC @ 5V | GaNFET (Gallium Nitride) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2102ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/epc-epc2102-datasheets-9203.pdf | Die | Die | 60V | 2 N-Channel (Half Bridge) | 830pF @ 30V | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 23A Tj | 6.8nC @ 5V | GaNFET (Gallium Nitride) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K20-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/nexperiausainc-buk9k2080ex-datasheets-9534.pdf | SOT-1205, 8-LFPAK56 | 12 Weeks | compliant | 8 | 80V | 68W | 2 N-Channel (Dual) | 3462pF @ 25V | 17m Ω @ 10A, 10V | 2.1V @ 1mA | 23A Ta | 25.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20AM04FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm20am04fg-datasheets-9635.pdf | SP6 | 108mm | 21.9mm | 62mm | Lead Free | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1 | Single | 1.25kW | 2 | R-XUFM-X7 | 32 ns | 64ns | 116 ns | 88 ns | 372A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 1250W | 0.005Ohm | 3000 mJ | 2 N-Channel (Half Bridge) | 28900pF @ 25V | 5m Ω @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| DMN2022UNS-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn2022uns7-datasheets-9316.pdf | 8-PowerVDFN | 14 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 1.2W | NOT SPECIFIED | NOT SPECIFIED | 10.7A | 20V | 2 N-Channel (Dual) Common Drain | 1870pF @ 10V | 10.8m Ω @ 4A, 4.5V | 1V @ 250μA | 10.7A Ta | 20.3nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K45-100E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k45100e115-datasheets-8683.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AVALANCHE RATED | Tin | not_compliant | e3 | AEC-Q101; IEC-60134 | YES | 53W | GULL WING | 8 | 2 | Dual | 53W | 2 | R-PDSO-G6 | 4 ns | 8.47ns | 27.75 ns | 41.34 ns | 21A | 10V | 100V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 100V | 2 N-Channel (Dual) | 2152pF @ 25V | 42m Ω @ 5A, 10V | 2.1V @ 1mA | 33.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SLA5086 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/sanken-sla5086-datasheets-9667.pdf | 12-SIP | 12 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | 5W | SINGLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 5 | Not Qualified | R-PSFM-T12 | 5A | SILICON | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 5W | 5A | 10A | 0.22Ohm | 5 P-Channel, Common Source | 790pF @ 10V | 220m Ω @ 3A, 10V | 2V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C674NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c674nlwft1g-datasheets-9508.pdf | 8-PowerTDFN | 6 | 48 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3W Ta 37W Tc | 119A | 0.0204Ohm | 61 mJ | 2 N-Channel (Dual) | 640pF @ 25V | 14.4m Ω @ 10A, 10V | 2.2V @ 25μA | 11A Ta 42A Tc | 4.7nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P15FU,LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 200mW Ta | 2 P-Channel (Dual) | 9.1pF @ 3V | 12 Ω @ 10mA, 4V | 1.7V @ 100μA | 100mA | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4925DCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm4925dcsrlg-datasheets-9524.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 30V | 2W | 2 P-Channel (Dual) | 1900pF @ 15V | 25m Ω @ 7.1A, 10V | 3V @ 250μA | 7.1A Ta | 33nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P35AFE,LF | Toshiba Semiconductor and Storage | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | 20V | 150mW Ta | 2 P-Channel (Dual) | 42pF @ 10V | 1.4 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K22-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/nexperiausainc-buk9k2280ex-datasheets-9531.pdf | SOT-1205, 8-LFPAK56 | 12 Weeks | 8 | 80V | 64W | 2 N-Channel (Dual) | 3115pF @ 25V | 19m Ω @ 10A, 10V | 2.1V @ 1mA | 21A Ta | 23.1nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K29-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k29100ex-datasheets-9540.pdf | SOT-1205, 8-LFPAK56 | 12 Weeks | 8 | 68W | LFPAK56D | 2.436nF | 29.5A | 100V | 68W | 2 N-Channel (Dual) | 2436pF @ 25V | 24.5mOhm @ 10A, 10V | 4V @ 1mA | 29.5A | 38.1nC @ 10V | Standard | 24.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S2L35ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipg20n06s2l35atma1-datasheets-9544.pdf | 8-PowerVDFN | 10 Weeks | EAR99 | YES | FLAT | NOT SPECIFIED | *PG20N06 | NOT SPECIFIED | 2 | R-PDSO-F | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 65W | 20A | 80A | 0.035Ohm | 100 mJ | 2 N-Channel (Dual) | 790pF @ 25V | 35m Ω @ 15A, 10V | 2V @ 27μA | 20A | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2106ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/epc-epc2106engrt-datasheets-9551.pdf | Die | 16 Weeks | Die | 75pF | 1.7A | 100V | 2 N-Channel (Half Bridge) | 75pF @ 50V | 70mOhm @ 2A, 5V | 2.5V @ 600μA | 1.7A | 0.73nC @ 5V | GaNFET (Gallium Nitride) | 70 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR770DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sir770dpt1ge3-datasheets-9461.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | 17.8W | C BEND | 260 | 8 | 2 | Dual | 40 | 3.6W | 2 | FET General Purpose Power | R-PDSO-C6 | 8 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.8V | 8A | 35A | 30V | 2 N-Channel (Dual) | 900pF @ 15V | 2.8 V | 21m Ω @ 8A, 10V | 2.8V @ 250μA | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI4943CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4943cdyt1e3-datasheets-1867.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 19.2MOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 30 | 2W | 2 | 50 ns | 71ns | 15 ns | 29 ns | 8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1V | 3.1W | 8A | -20V | 2 P-Channel (Dual) | 1945pF @ 10V | 19.2m Ω @ 8.3A, 10V | 3V @ 250μA | 62nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| TSM4946DCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/taiwansemiconductorcorporation-tsm4946dcsrlg-datasheets-9375.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | ULTRA-LOW RESISTANCE | 8541.29.00.95 | YES | GULL WING | 260 | 30 | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2.4W | 4.5A | 30A | 0.055Ohm | 2 N-Channel (Dual) | 910pF @ 24V | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 4.5A Ta | 18nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| QS8M13TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-SMD, Flat Lead | Lead Free | 8 | 52 Weeks | 8 | yes | EAR99 | No | e2 | TIN COPPER | 1.5W | DUAL | 260 | *M13 | 8 | 10 | 2 | Other Transistors | 40ns | 5A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6A | 0.039Ohm | N and P-Channel | 390pF @ 10V | 28m Ω @ 6A, 10V | 2.5V @ 1mA | 6A 5A | 5.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| CMLDM7003 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/centralsemiconductorcorp-cmldm7003gtrpbfree-datasheets-6345.pdf | SOT-563, SOT-666 | 24 Weeks | e3 | Matte Tin (Sn) | YES | FET General Purpose Power | 0.35W | 50V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.28A | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 50mA, 5V | 1V @ 250μA | 280mA | 0.76nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS9620S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdms9620s-datasheets-9425.pdf | 8-PowerWDFN | 5mm | 750μm | 6mm | Lead Free | 8 | 16 Weeks | 228mg | No SVHC | 32MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.5W | Dual | 2.5W | 2 | FET General Purpose Power | 13ns | 7 ns | 27 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.6V | 1W | 7.5A | 60A | 30V | 2 N-Channel (Dual) | 665pF @ 15V | 21.5m Ω @ 7.5A, 10V | 3V @ 250μA | 7.5A 10A | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| BUK7K8R7-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k8r740ex-datasheets-9452.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 53W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | R-PDSO-G6 | 30A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 53W | 225A | 2 N-Channel (Dual) | 1439pF @ 25V | 8.5m Ω @ 15A, 10V | 4V @ 1mA | 21.8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M3TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8m3tb1-datasheets-9436.pdf | 8-SOIC (0.154, 3.90mm Width) | 52 Weeks | 8 | 2W | *M3 | 2W | 4.5A | 30V | N and P-Channel | 230pF @ 10V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5A 4.5A | 3.9nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7922DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7922dnt1ge3-datasheets-9020.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 15 Weeks | 195mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7922 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 7 ns | 11ns | 11 ns | 8 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 10A | 2 N-Channel (Dual) | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 1.8A | 8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SIA907EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia907edjtt1ge3-datasheets-9247.pdf | PowerPAK® SC-70-6 Dual | Contains Lead | 6 | 28.009329mg | 57mOhm | 6 | EAR99 | No | 7.8W | 6 | Dual | 1.9W | 2 | Other Transistors | 5 ns | 10ns | 10 ns | 30 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 57m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 4.5A Tc | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| EM5K5T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | 6-SMD (5 Leads), Flat Lead | 6 | 150mW | *K5 | 150mW | 300mA | 30V | 30V | 2 N-Channel (Dual) | 600m Ω @ 300mA, 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2010UDZ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2010udz7-datasheets-9328.pdf | 6-UDFN Exposed Pad | 16 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 700mW | NOT SPECIFIED | NOT SPECIFIED | 11A | 24V | 700mW | 2 N-Channel (Dual) Common Drain | 2665pF @ 10V | 7m Ω @ 5.5A, 4.5V | 1.5V @ 250μA | 33.2nC @ 4.5V | Standard |
