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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Interface IC Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Output Current Flow Direction | Output Current-Max | Supply Voltage1-Min | Supply Voltage1-Max | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| EPC2100ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/epc-epc2100engrt-datasheets-2540.pdf | Die | 16 Weeks | Die | 30V | 2 N-Channel (Half Bridge) | 475pF @ 15V 1960pF @ 15V | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 10A Ta 40A Ta | 4.9nC @ 15V, 19nC @ 15V | GaNFET (Gallium Nitride) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC1550TG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microchiptechnology-tc1550tgg-datasheets-2546.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.9mm | 8 | 7 Weeks | 84.99187mg | 8 | FAST SWITCHNG | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | 2 | Dual | 40 | 2 | Other Transistors | Not Qualified | 10 ns | 10ns | 10 ns | 15 ns | 16A | 20V | SILICON | AMPLIFIER | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 350A | 500V | N and P-Channel | 55pF @ 25V | 60 Ω @ 50mA, 10V | 4V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2105ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/epc-epc2105engrt-datasheets-2522.pdf | Die | 16 Weeks | Die | 300pF | 9.5A | 80V | 2 N-Channel (Half Bridge) | 300pF @ 40V | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 9.5A | 2.5nC @ 5V | GaNFET (Gallium Nitride) | 14.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD88584Q5DC | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 22-PowerTFDFN | 6mm | 5mm | 22 | 12 Weeks | 22 | ACTIVE (Last Updated: 2 days ago) | yes | 850μm | EAR99 | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 10V | CSD88584 | 16V | 4.5V | BRUSHLESS DC MOTOR CONTROLLER | NOT SPECIFIED | 40V | 12W | 50A | 2 N-Channel (Half Bridge) | 12400pF @ 20V | 0.95m Ω @ 30A, 10V | 2.3V @ 250μA | 88nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD85100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdmd85100-datasheets-2465.pdf | 8-PowerWDFN | 12 Weeks | 94.85095mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 2.2W | 260 | NOT SPECIFIED | 10.4A | 100V | 2.2W | 2 N-Channel (Half Bridge) | 2230pF @ 50V | 9.9m Ω @ 10.4A, 10V | 4V @ 250μA | 31nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLA5065 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/sanken-sla5065-datasheets-2608.pdf | 15-SIP Exposed Tab, Formed Leads | 15 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | 4.8W | SINGLE | NOT SPECIFIED | 15 | NOT SPECIFIED | 4 | Not Qualified | R-PSFM-T15 | 7A | SILICON | 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 4.8W | 7A | 15A | 0.1Ohm | 60 mJ | 4 N-Channel | 660pF @ 10V | 100m Ω @ 3.5A, 10V | 2V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3585EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq3585evt1ge3-datasheets-2454.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.67W | 3.57A | 0.12Ohm | N and P-Channel | 77m Ω @ 1A, 4.5V, 166m Ω @ 1A, 4.5V | 1.5V @ 250μA | 3.57A Tc 2.5A Tc | 2.5nC @ 4.5V, 3.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD88599Q5DC | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 22-PowerTFDFN | 6mm | 5mm | 22 | 8 Weeks | 22 | ACTIVE (Last Updated: 2 days ago) | yes | 850μm | EAR99 | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD88599 | 54V | NOT SPECIFIED | HALF BRIDGE BASED PERIPHERAL DRIVER | 60V | 12W | SOURCE SINK | 4.5V | 16V | 2 N-Channel (Half Bridge) | 4840pF @ 30V | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 27nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPC8014S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdpc8014s-datasheets-2086.pdf | 8-PowerWDFN | 5.1mm | 750μm | 6.1mm | 8 | 23 Weeks | 207.7333mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | not_compliant | e3 | 2.3W | NO LEAD | NOT SPECIFIED | 2 | NOT SPECIFIED | 2 | FET General Purpose Power | 16 ns | 6ns | 4 ns | 47 ns | 41A | 12V | SILICON | DRAIN | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 2.1W 2.3W | 110A | 75A | 73 mJ | 2 N-Channel (Dual) Asymmetrical | 2375pF @ 13V | 3.8m Ω @ 20A, 10V | 2.5V @ 250μA | 20A 41A | 35nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ906E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjq906et1ge3-datasheets-2145.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 50W | 175°C | PowerPAK® 8 x 8 Dual | 14 ns | 26 ns | 95A | 20V | 40V | 50W | 2.7mOhm | 40V | 2 N-Channel (Dual) | 3600pF @ 20V | 3.3mOhm @ 5A, 10V | 3.5V @ 250μA | 95A Tc | 42nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100H45SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptm100h45sctg-datasheets-2495.pdf | SP4 | 14 | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 357W | 4 | Not Qualified | 10 ns | 12ns | 35 ns | 121 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 72A | 2500 mJ | 4 N-Channel (H-Bridge) | 4350pF @ 25V | 540m Ω @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLA5068-LF830 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | 2001 | /files/sanken-sla5068lf830-datasheets-2497.pdf | 15-SIP Exposed Tab, Formed Leads | 12 Weeks | 5W | 15-ZIP | 660pF | 7A | 60V | 5W | 6 N-Channel (3-Phase Bridge) | 660pF @ 10V | 100mOhm @ 3.5A, 10V | 2V @ 250μA | 7A | Standard | 100 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ980EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjq980elt1ge3-datasheets-2325.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | unknown | 2 | 187W | 175°C | 10 ns | 21 ns | 36A | 20V | 80V | 2 N-Channel (Dual) | 1995pF @ 40V | 13.5m Ω @ 5A, 10V | 2.5V @ 250μA | 36A Tc | 36nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPC8013S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdpc8013s-datasheets-2136.pdf | 8-PowerWDFN | 3.4mm | 750μm | 3.4mm | Lead Free | 12 Weeks | 192mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | Dual | 2W | 2 | FET General Purpose Power | 6 ns | 5ns | 4 ns | 30 ns | 55A | 20V | METAL-OXIDE SEMICONDUCTOR | 1.7V | 800mW 900mW | 30V | 2 N-Channel (Dual) | 827pF @ 15V | 1.7 V | 6.4m Ω @ 13A, 10V | 3V @ 250μA | 13A 26A | 13nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ904E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjq904et1ge3-datasheets-2347.pdf | PowerPAK® 8 x 8 Dual | 4 | 14 Weeks | No SVHC | 6 | unknown | YES | 135W | SINGLE | GULL WING | 2 | R-PSSO-G4 | 100A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2V | 75W | 300A | 0.0034Ohm | 125 mJ | 2 N-Channel (Dual) | 5900pF @ 20V | 3.4m Ω @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 75nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD8240LET40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmd8240let40-datasheets-2327.pdf | 12-PowerWDFN | 12 Weeks | 82.3188mg | No SVHC | 12 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 50W | 260 | Dual | NOT SPECIFIED | 24A | 40V | 2V | 2 N-Channel (Dual) | 4230pF @ 20V | 2.6m Ω @ 23A, 10V | 3V @ 250μA | 56nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD8680 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmd8680-datasheets-2342.pdf | 8-PowerWDFN | 12 Weeks | 97.95918mg | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | 39W | NOT SPECIFIED | Dual | NOT SPECIFIED | 66A | 80V | 3V | 2 N-Channel (Dual) | 5330pF @ 40V | 4.7m Ω @ 16A, 10V | 4V @ 250μA | 66A Tc | 73nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4943CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4943cdyt1e3-datasheets-1867.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 19.2mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 30 | 2W | 2 | 50 ns | 71ns | 15 ns | 29 ns | -8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.1W | 8A | -20V | 2 P-Channel (Dual) | 1945pF @ 10V | 19.2m Ω @ 8.3A, 10V | 3V @ 250μA | 8A | 62nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K32FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/rohm-sp8k32fratb-datasheets-8940.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2W | 4.5A | 18A | 0.077Ohm | 2 N-Channel (Dual) | 500pF @ 10V | 65m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A Ta | 10nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5489NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5489nlt1g-datasheets-1954.pdf | 8-PowerTDFN | Lead Free | 6 Weeks | 37.393021mg | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3W | 8 | 2 | Dual | FET General Purpose Power | 7 ns | 11ns | 21 ns | 31 ns | 12A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 330pF @ 25V | 65m Ω @ 15A, 10V | 2.5V @ 250μA | 4.5A | 12.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8090 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms8090-datasheets-2438.pdf | 8-PowerWDFN | 5mm | 750μm | 6mm | Lead Free | 4 | 4 Weeks | 250mg | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.2W | Dual | 59W | 2 | FET General Purpose Power | R-PDSO-N4 | 10.6 ns | 4.6ns | 4 ns | 17.4 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 40A | 0.013Ohm | 100V | 2 N-Channel (Dual) | 1800pF @ 50V | 13m Ω @ 10A, 10V | 4V @ 250μA | 27nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7956DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7956dpt1e3-datasheets-2416.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7956 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 13 ns | 36ns | 36 ns | 18 ns | 4.1A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 150V | 2 N-Channel (Dual) | 105m Ω @ 4.1A, 10V | 4V @ 250μA | 2.6A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD8280 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmd8280-datasheets-2431.pdf | 12-PowerWDFN | 12 | 12 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1W | NO LEAD | 260 | 2 | Dual | NOT SPECIFIED | 2 | 15 ns | 12ns | 8.9 ns | 26 ns | 11A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 80V | METAL-OXIDE SEMICONDUCTOR | 80V | 2 N-Channel (Dual) | 3050pF @ 40V | 8.2m Ω @ 11A, 10V | 4V @ 250μA | 44nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SC8673010L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TJ | Digi-Reel® | 1 (Unlimited) | DEPLETION MODE | RoHS Compliant | /files/panasonic-sc8673010l-datasheets-8905.pdf | 8-PowerSMD, Flat Leads | 4.9mm | 950μm | 5.9mm | 6 | 12 Weeks | 8 | EAR99 | unknown | 34W | NOT SPECIFIED | Dual | NOT SPECIFIED | 34W | 2 | R-PDSO-F6 | 7 ns | 14ns | 9 ns | 64 ns | 40A | 3V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.7W 2.5W | 10A | 0.014Ohm | 30V | 2 N-Channel (Dual) Asymmetrical | 5180pF @ 10V | 10m Ω @ 8A, 10V | 3V @ 4.38mA | 16A 40A | 6.3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ906EL-T1_GE3 | Vishay Siliconix | $2.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq906elt1ge3-datasheets-2310.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 187W | 175°C | PowerPAK® 8 x 8 Dual | 10 ns | 25 ns | 160A | 20V | 40V | 187W | 3.6mOhm | 40V | 2 N-Channel (Dual) | 3238pF @ 20V | 4.3mOhm @ 5A, 10V | 2.5V @ 250μA | 160A Tc | 45nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87350Q5D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 5mm | 1.5mm | 6mm | Contains Lead | 8 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | 1.5mm | EAR99 | Tin | No | 1 | e3 | 12W | 260 | 1.27mm | CSD87350 | 9 | SWITCHING REGULATOR | Dual | 12W | 8 ns | 17ns | 2.3 ns | 33 ns | 40A | 8V | 30V | 2.1V | 12V | 27V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 30V | 2 N-Channel (Dual) | 1770pF @ 15V | 5.9m Ω @ 20A, 8V | 2.1V @ 250μA | 10.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD86356Q5D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 1.05mm | ROHS3 Compliant | 8-PowerTDFN | 6mm | 6mm | 8 | 6 Weeks | yes | EAR99 | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 1.27mm | CSD86356 | SWITCHING REGULATOR | NOT SPECIFIED | R-PDSO-N8 | 25V | 12W Ta | 12V | 22V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 2 N-Channel (Half Bridge) | 1.04nF @ 12.5V 2.51nF @ 12.5V | 4.5m Ω @ 20A, 5V, 0.8m Ω @ 20A, 5V | 1.85V @ 250μA, 1.5V @ 250μA | 40A Ta | 7.9nC @ 4.5V, 19.3nC @ 4.5V | Logic Level Gate, 5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HP8M31TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-hp8m31tb1-datasheets-2101.pdf | 8-PowerTDFN | 6 | 16 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3W Ta | 18A | 0.073Ohm | 5.4 mJ | N and P-Channel | 470pF 2300pF @ 30V | 65m Ω @ 8.5A, 10V, 70m Ω @ 8.5A, 10V | 3V @ 1mA | 8.5A Ta | 12.3nC, 38nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C674NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-ntmfd5c674nlt1g-datasheets-2108.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3W Ta 37W Tc | 2 N-Channel (Dual) | 640pF @ 25V | 14.4m Ω @ 10A, 10V | 2.2V @ 25μA | 11A Ta 42A Tc | 10nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPS1120DR | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-tps1120dr-datasheets-8878.pdf | -15V | -1.17A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1.58mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | Gold | No | e4 | 840mW | GULL WING | 260 | TPS1120 | 8 | 840mW | 2 | Other Transistors | 4.5 ns | 10ns | 10 ns | 13 ns | 1.17A | 2V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.4Ohm | 15V | 2 P-Channel (Dual) | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 5.45nC @ 10V | Logic Level Gate |
