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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| ALD110808PCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald110908asal-datasheets-9244.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16 | 500mW | 500mW | 16-PDIP | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 4 N-Channel, Matched Pair | 2.5pF @ 5V | 500Ohm @ 4.8V | 820mV @ 1μA | 12mA 3mA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||
| ALD114904PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald114904sal-datasheets-3047.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 3.6V | 360mV @ 1μA | 12mA 3mA | Depletion Mode | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||
| APTM120H140FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm120h140ft1g-datasheets-0414.pdf | SP1 | Lead Free | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 12 | 208W | 4 | FET General Purpose Power | 26 ns | 15ns | 24 ns | 85 ns | 8A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 8A | 50A | 4 N-Channel (H-Bridge) | 3812pF @ 25V | 1.68 Ω @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| APTC60HM70T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc60hm70t3g-datasheets-0416.pdf | SP3 | Lead Free | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 250W | UPPER | UNSPECIFIED | 25 | 250W | 4 | FET General Purpose Power | R-XUFM-X25 | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 160A | 0.07Ohm | 1800 mJ | 4 N-Channel (H-Bridge) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | ||||||||||||||||||||||||||||
| APTC60HM70RT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Screw | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-aptc60hm70rt3g-datasheets-0419.pdf | SP3 | 36 Weeks | 3 | EAR99 | No | 250W | 250W | 4 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) + Bridge Rectifier | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DDAM70T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60ddam70t1g-datasheets-0395.pdf | SP1 | 36 Weeks | 1 | EAR99 | 250W | 250W | 2 | FET General Purpose Power | 39A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N Channel (Dual Buck Chopper) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FPF1C2P5BF07A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-fpf1c2p5bf07a-datasheets-0420.pdf | F1 Module | 13 Weeks | 23g | No SVHC | yes | 250W | 2.5kV | 36A | 650V | 109 ns | 5 N-Channel (Solar Inverter) | 90m Ω @ 27A, 10V | 3.8V @ 250μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN27N120SK | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | SOT-227-4, miniBLOC | 20 Weeks | 1200V 1.2kV | 2 N-Channel (Dual) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMM50-025TF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-fmm50025tf-datasheets-0379.pdf | i4-Pac™-5 | 5 | 30 Weeks | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 125W | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 30A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | METAL-OXIDE SEMICONDUCTOR | 125W | 400 mJ | 2 N-Channel (Dual) | 4000pF @ 25V | 50m Ω @ 25A, 10V | 4.5V @ 250μA | 78nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| GMM3X160-0055X2-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-gmm3x1600055x2smdsam-datasheets-0376.pdf | 24-SMD, Gull Wing | 24 | EAR99 | Tin (984) Over Nickel (39) | DUAL | 24 | 6 | FET General Purpose Power | Not Qualified | R-PDSO-G24 | 150A | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 0.0031Ohm | 6 N-Channel (3-Phase Bridge) | 4V @ 1mA | 110nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| MCB20P1200LB-TUB | IXYS | $71.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MCB20P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC80H15T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | 12 | 277W | 4 | FET General Purpose Power | 10 ns | 13ns | 35 ns | 83 ns | 28A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 670 mJ | 4 N-Channel (H-Bridge) | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| APTM50DDA10T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50dda10t3g-datasheets-0383.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 312W | UPPER | UNSPECIFIED | 25 | 312W | 2 | 15 ns | 21ns | 52 ns | 73 ns | 37A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 140A | 1600 mJ | 2 N-Channel (Dual) | 4367pF @ 25V | 120m Ω @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| MCB20P1200LB-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MCB20P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM60H23FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm60h23ft1g-datasheets-0386.pdf | SP1 | 12 | 36 Weeks | 1 | EAR99 | AVALANCHE RATED | No | 208W | UPPER | UNSPECIFIED | 12 | 208W | 4 | 37 ns | 43ns | 34 ns | 115 ns | 20A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.23Ohm | 4 N-Channel (H-Bridge) | 5316pF @ 25V | 276m Ω @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| LKK47-06C5 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-lkk4706c5-datasheets-0388.pdf | ISOPLUS264™ | Lead Free | 5 | 32 Weeks | 5 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 480W | 2 | FET General Purpose Power | Not Qualified | 20ns | 10 ns | 100 ns | 47A | 20V | SILICON | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 600V | 2 N-Channel (Dual) | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.9V @ 3mA | 190nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||
| APTC80DDA15T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc80dda15t3g-datasheets-0389.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | 25 | 277W | 2 | FET General Purpose Power | 10 ns | 13ns | 35 ns | 83 ns | 28A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 110A | 0.15Ohm | 670 mJ | 2 N-Channel (Dual) | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| MKE38P600TLB-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | /files/ixys-mke38p600tlbtrr-datasheets-0392.pdf | 9-SMD Module | 32 Weeks | ISOPLUS-SMPD™.B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTC120WX75GD-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | ISOPLUS-DIL™ | 28 Weeks | NOT SPECIFIED | NOT SPECIFIED | 75V | 6 N-Channel (3-Phase Bridge) | 10500pF @ 25V | 3.1m Ω @ 100A, 10V | 4V @ 1mA | 180A Tc | 178nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMM45-02F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-vmm4502f-datasheets-0375.pdf | TO-240AA | 7 | 24 Weeks | 6 | yes | No | 190W | UPPER | UNSPECIFIED | VMM | 7 | Dual | 190W | 2 | FET General Purpose Power | R-PUFM-X7 | 45ns | 45 ns | 300 ns | 45A | 20V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 180A | 0.039Ohm | 200V | 2 N-Channel (Dual) | 7500pF @ 25V | 45m Ω @ 22.5A, 10V | 4V @ 4mA | 225nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| GWM100-0085X1-SMD SAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 17-SMD, Gull Wing | GWM100 | 85V | 6 N-Channel (3-Phase Bridge) | 6.2m Ω @ 75A, 10V | 4V @ 250μA | 103A | 114nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GMM3X160-0055X2-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-gmm3x1600055x2smdsam-datasheets-0376.pdf | 24-SMD, Gull Wing | 150A | 55V | 6 N-Channel (3-Phase Bridge) | 4V @ 1mA | 110nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMK165-007T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-vmk165007t-datasheets-0393.pdf | TO-240AA | Lead Free | 7 | 8 Weeks | 7 | yes | EAR99 | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | NOT SPECIFIED | 390W | 2 | FET General Purpose Power | Not Qualified | 280ns | 110 ns | 390 ns | 165A | 20V | SILICON | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 70V | METAL-OXIDE SEMICONDUCTOR | 660A | 0.006Ohm | 70V | 2 N-Channel (Dual) | 8800pF @ 25V | 7m Ω @ 82.5A, 10V | 4V @ 8mA | 480nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| GWM180-004X2-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 17-SMD, Gull Wing | 180A | 40V | 6 N-Channel (3-Phase Bridge) | 2.5m Ω @ 100A, 10V | 4.5V @ 1mA | 110nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX2F60N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | -55°C~150°C TJ | /files/ixys-mmix2f60n50p3-datasheets-0394.pdf | 24-SMD Module, 9 Leads | 30 Weeks | compliant | 500V | 320W | 2 N-Channel (Dual) | 6250pF @ 25V | 110m Ω @ 30A, 10V | 5V @ 4mA | 30A Tc | 96nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMM22-06PF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-fmm2206pf-datasheets-0377.pdf | i4-Pac™-5 | 5 | 30 Weeks | 5 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 130W | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 12A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 130W | 66A | 1000 mJ | 2 N-Channel (Dual) | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5V @ 1mA | 58nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| FMM65-015P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-fmm65015p-datasheets-0348.pdf | i4-Pac™-5 | 5 | yes | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | Not Qualified | R-PSIP-T5 | 65A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | METAL-OXIDE SEMICONDUCTOR | 0.022Ohm | 2 N-Channel (Dual) | 22m Ω @ 50A, 10V | 4V @ 1mA | 230nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| IRFH4251DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh4251dtrpbf-datasheets-0009.pdf | 8-PowerVDFN | 6mm | 900μm | 5mm | Lead Free | 8 | 14 Weeks | No SVHC | 8 | EAR99 | No | 63W | Dual | 2 | FET General Purpose Power | 188A | 20V | SILICON | SOURCE | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 31W 63W | 45A | 0.0046Ohm | 61 mJ | 2 N-Channel (Dual), Schottky | 1314pF @ 13V | 3.2m Ω @ 30A, 10V | 2.1V @ 35μA | 64A 188A | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| FMK75-01F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-fmk7501f-datasheets-0357.pdf | i4-Pac™-5 | 5 | 5 | yes | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 80 ns | 75A | 20V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 100V | 2 N-Channel (Dual) | 25m Ω @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| GMM3X100-01X1-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-gmm3x10001x1smd-datasheets-0345.pdf | 24-SMD, Gull Wing | 90A | 100V | 6 N-Channel (3-Phase Bridge) | 4.5V @ 1mA | 90nC @ 10V | Standard |
