Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIZ980BDT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz980bdtt1ge3-datasheets-2040.pdf | 8-PowerPair™ | 8-PowerPair™ | 30V | 3.8W Ta 20W Tc 5W Ta 66W Tc | 2 N-Channel (Dual), Schottky | 790pF 3655pF @ 15V | 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V | 2.2V @ 250μA | 23.7A Ta 54.8A Tc 54.3A Ta 197A Tc | 18nC, 79nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC3401LDW-13 | Diodes Incorporated | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmc3401ldw13-datasheets-2065.pdf | 6-TSSOP, SC-88, SOT-363 | 23 Weeks | e3 | Matte Tin (Sn) | 30V | 290mW Ta | N and P-Channel Complementary | 50pF 19pF @ 15V | 400m Ω @ 590mA, 10V, 900m Ω @ 420mA, 10V | 1.6V @ 250μA, 2.6V @ 250μA | 800mA Ta 550mA Ta | 1.2nC, 800pC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC3071LVT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | 22 Weeks | e3 | Matte Tin (Sn) | 260 | 30 | 30V | 700mW Ta | N and P-Channel Complementary | 190pF @ 15V 254pF @ 15V | 50m Ω @ 3.5A, 10V, 95m Ω @ 3.8A, 10V | 2.5V @ 250μA | 4.6A Ta 3.3A Ta | 4.5nC @ 10V, 6.5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN67D8LDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn67d8ldw13-datasheets-1994.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 320mW | NOT SPECIFIED | NOT SPECIFIED | 230mA | 60V | 320mW | 2 N-Channel (Dual) | 22pF @ 25V | 5 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.82nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N37FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-563, SOT-666 | 16 Weeks | yes | 150mW | 150mW | 250mA | 10V | 20V | 20V | 2 N-Channel (Dual) | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN61D9UDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn61d9udw7-datasheets-8247.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | 320mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 350mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.35A | 3.5Ohm | 2 N-Channel (Dual) | 28.5pF @ 30V | 2 Ω @ 50mA, 5V | 1V @ 250μA | 0.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||
NX3020NAKVYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-nx3020nakv115-datasheets-7482.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | 6 | YES | 260mW | GULL WING | 6 | 2 | 200mA | 30V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.2A | 5.2Ohm | 2 N-Channel (Dual) | 20pF @ 10V | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | 0.44nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
SQJ204EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj204ept1ge3-datasheets-1945.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual Asymmetric | 12V | 27W Tc 48W Tc | 2 N-Channel (Dual) Asymmetrical | 1400pF @ 6V 3700pF @ 6V | 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V | 1.5V @ 250μA | 20A Tc 60A Tc | 20nC @ 10V, 50nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0924NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0924ndiatma1-datasheets-1903.pdf | 8-PowerTDFN | 6 | 18 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | 1W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | 32A | 20V | SILICON | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 0.007Ohm | 2 N-Channel (Dual) Asymmetrical | 1160pF @ 15V | 5m Ω @ 20A, 10V | 2V @ 250μA | 17A 32A | 10nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||
BSC072N04LDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-T2 | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-bsc072n04ldatma1-datasheets-1912.pdf | 8-PowerVDFN | 26 Weeks | 40V | 65W Tc | 2 N-Channel (Dual) | 3990pF @ 20V | 7.2m Ω @ 17A, 10V | 2.2V @ 30μA | 20A Tc | 52nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC4015SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmc4015ssd13-datasheets-1857.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | 1.2W | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 6.2A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 0.02Ohm | N and P-Channel | 1810pF @ 20V | 15m Ω @ 3A, 10V | 3V @ 250μA | 8.6A 6.2A | 40nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
IRF40H233XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-irf40h233xtma1-datasheets-1901.pdf | 12 Weeks | 40V | 2 N-Channel (Dual) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC112N06LDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-T2 | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-bsc112n06ldatma1-datasheets-1942.pdf | 8-PowerVDFN | 26 Weeks | 60V | 65W Tc | 2 N-Channel (Dual) | 4020pF @ 30V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 20A Tc | 55nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SISF04DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf04dnt1ge3-datasheets-1910.pdf | PowerPAK® 1212-8SCD | PowerPAK® 1212-8SCD | 30V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2600pF @ 15V | 4mOhm @ 7A, 10V | 2.3V @ 250μA | 30A Ta 108A Tc | 60nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NX3008PBKVL | Nexperia USA Inc. | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-nx3008pbk215-datasheets-5026.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | 30V | 350mW Ta 1.14W Tc | 2 P-Channel (Dual) | 46pF @ 15V | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 230mA Ta | 0.72nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMP31D7LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmp31d7ldw13-datasheets-1992.pdf | 6-TSSOP, SC-88, SOT-363 | 23 Weeks | 2 P-Channel (Dual) | 900m Ω @ 420mA, 10V | 2.6V @ 250μA | 550mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN67D8LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn67d8ldw13-datasheets-1994.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 320mW | NOT SPECIFIED | NOT SPECIFIED | 230mA | 60V | 320mW | 2 N-Channel (Dual) | 22pF @ 25V | 5 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.82nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
DMP2900UW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN33D8LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn33d8ldw7-datasheets-5901.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 350mW | GULL WING | 260 | 30 | 2 | R-PDSO-G6 | 250mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.25A | 3Ohm | 2 N-Channel (Dual) | 48pF @ 5V | 2.4 Ω @ 250mA, 10V | 1.5V @ 100μA | 1.23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
BSM300D12P3E005 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-bsm300d12p3e005-datasheets-2006.pdf | Module | 19 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V 1.2kV | 1260W Tc | 2 N-Channel (Half Bridge) | 14000pF @ 10V | 5.6V @ 91mA | 300A Tc | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SISF02DN-T1-GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisf02dnt1ge3-datasheets-1923.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 25V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2650pF @ 10V | 3.5mOhm @ 7A, 10V | 2.3V @ 250μA | 30.5A Ta 60A Tc | 56nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIZ250DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz250dtt1ge3-datasheets-1886.pdf | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) | 60V | 4.3W Ta 33W Tc | 2 N-Channel (Dual) | 840pF 790pF @ 30V | 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V | 2.4V @ 250μA | 14A Ta 38A Tc | 21nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMG6301UDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg6301udw7-datasheets-5939.pdf | 6-TSSOP, SC-88, SOT-363 | 15 Weeks | 6.010099mg | 300mW | 2 | Dual | SOT-363 | 27.9pF | 2.9 ns | 1.8ns | 2.3 ns | 6.6 ns | 240mA | 8V | 25V | 300mW | 3.8Ohm | 25V | 2 N-Channel (Dual) | 27.9pF @ 10V | 4Ohm @ 400mA, 4.5V | 1.5V @ 250μA | 240mA | 0.36nC @ 4.5V | Standard | 4 Ω | ||||||||||||||||||||||||||||||||||||||||||
BSC155N06NDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-T2 | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-bsc155n06ndatma1-datasheets-1943.pdf | 8-PowerVDFN | 6 | 26 Weeks | not_compliant | e3 | Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 50W Tc | 20A | 80A | 0.0155Ohm | 40 mJ | 2 N-Channel (Dual) | 2250pF @ 30V | 15.5m Ω @ 17A, 10V | 4V @ 20μA | 20A Tc | 29nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
NX138AKSF | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ENHANCEMENT MODE | ROHS3 Compliant | /files/nexperiausainc-nx138aksx-datasheets-0887.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | IEC-60134 | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 1.33W | 0.17A | 2 N-Channel (Dual) | 20pF @ 30V | 4.5 Ω @ 170mA, 10V | 1.5V @ 250μA | 170mA Ta | 1.4nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
STS5DP3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ H6 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STS5D | NOT SPECIFIED | 30V | 2.7W | 2 P-Channel (Dual) | 639pF @ 25V | 56m Ω @ 2.5A, 10V | 2.5V @ 250μA | 5A Ta | 6nC @ 4.5V | Logic Level Gate, 4.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSM110NB04LDCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm110nb04ldcrrlg-datasheets-1865.pdf | 8-PowerTDFN | 8-PDFN (5x6) | 40V | 2W Ta 48W Tc | 2 N-Channel (Dual) | 1269pF @ 20V | 11mOhm @ 10A, 10V | 2.5V @ 250μA | 10A Ta 48A Tc | 23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSM250NB06LDCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm250nb06ldcrrlg-datasheets-1868.pdf | 8-PowerTDFN | 8-PDFN (5x6) | 60V | 2W Ta 48W Tc | 2 N-Channel (Dual) | 1314pF @ 30V | 25mOhm @ 6A, 10V | 2.5V @ 250μA | 6A Ta 29A Tc | 23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOD609G | Alpha & Omega Semiconductor Inc. | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 18 Weeks | 40V | 2W Ta 27W Tc 2W Ta 30W Tc | N and P-Channel Complementary | 545pF 890pF @ 20V | 30m Ω @ 12A, 10V, 45m Ω @ 12A, 10V | 3V @ 250μA | 12A Tc | 13nC, 21nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5877NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5877nlt1g-datasheets-4039.pdf | 8-PowerTDFN | Lead Free | 6 | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | AEC-Q101 | Halogen Free | YES | 3.2W | FLAT | 8 | Dual | 3.2W | 2 | FET General Purpose Power | R-PDSO-F6 | 17A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 6A | 74A | 0.06Ohm | 40 mJ | 2 N-Channel (Dual) | 540pF @ 25V | 39m Ω @ 7.5A, 10V | 3V @ 250μA | 6A | 20nC @ 10V | Logic Level Gate |
Please send RFQ , we will respond immediately.