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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| NX138BKSX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-nx138bksx-datasheets-7925.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | AEC-Q101; IEC-60134 | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.21A | 2 N-Channel (Dual) | 20pF @ 30V | 3.5 Ω @ 200mA, 10V | 1.5V @ 250μA | 210mA Ta | 0.7nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTJD4001NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntjd4001nt1g-datasheets-3034.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 10 Weeks | 6 | ACTIVE (Last Updated: 13 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | YES | 272mW | GULL WING | 6 | Dual | 2 | FET General Purpose Power | 17 ns | 23ns | 82 ns | 94 ns | 250mA | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.25A | 2.5Ohm | 12 pF | 2 N-Channel (Dual) | 33pF @ 5V | 1.5 Ω @ 10mA, 4V | 1.5V @ 100μA | 1.3nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| NX7002AKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/nexperiausainc-nx7002aks115-datasheets-7861.pdf | 6-TSSOP, SC-88, SOT-363 | 4 Weeks | 6 | No | 220mW | 2 | Dual | 6-TSSOP | 17pF | 6 ns | 7ns | 14 ns | 20 ns | 170mA | 1.6V | 60V | 60V | 220mW | 3Ohm | 60V | 2 N-Channel (Dual) | 17pF @ 10V | 4.5Ohm @ 100mA, 10V | 2.1V @ 250μA | 170mA | 0.43nC @ 4.5V | Logic Level Gate | 4.5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC31D5UDJ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmc31d5udj7b-datasheets-1124.pdf | SOT-963 | 22.2pF | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | 350mW | 260 | 2 | 30 | 3.5 ns | 5.2ns | 8.7 ns | 18.8 ns | 200mA | 12V | 30V | N and P-Channel | 22.6pF @ 15V | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 220mA 200mA | 0.38nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDG6316P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdg6316p-datasheets-8484.pdf | -12V | -700mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 270MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 300mW | GULL WING | Dual | 300mW | 2 | Other Transistors | 150°C | 5 ns | 13ns | 13 ns | 8 ns | -700mA | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -600mV | 0.7A | -12V | 2 P-Channel (Dual) | 146pF @ 6V | 270m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 700mA | 2.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| FDG6317NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 20V | 700mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 560MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 300mW | GULL WING | Dual | 300mW | 2 | FET General Purpose Power | 150°C | 5.5 ns | 7ns | 2.5 ns | 7.5 ns | 700mA | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 0.7A | 20V | 2 N-Channel (Dual) | 66.5pF @ 10V | 400m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 1.1nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| PMCXB900UEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmcxb900uez-datasheets-8216.pdf | 6-XFDFN Exposed Pad | 6 | 4 Weeks | 6 | No | YES | 265mW | DUAL | 6 | 2 | 500mA | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | N and P-Channel Complementary | 21.3pF @ 10V | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 600mA 500mA | 0.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG1023UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg1023uv7-datasheets-8380.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 15 Weeks | 3.005049mg | No SVHC | 750mOhm | 6 | yes | EAR99 | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 530mW | FLAT | 260 | DMG1023UV | 6 | Dual | 530mW | 2 | Other Transistors | 5.1 ns | 8.1ns | 20.7 ns | 28.4 ns | 1.03A | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | -20V | 2 P-Channel (Dual) | 59.76pF @ 16V | 750m Ω @ 430mA, 4.5V | 1V @ 250μA | 0.62nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| PMDT290UCE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmdt290uce115-datasheets-8183.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 500mW | FLAT | 6 | Dual | 330mW | 2 | 30ns | 72 ns | 550mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.8A | 0.38Ohm | -20V | N and P-Channel | 83pF @ 10V | 380m Ω @ 500mA, 4.5V | 950mV @ 250μA | 800mA 550mA | 0.68nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMN61D9UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn61d9udw7-datasheets-8247.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | 320mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 350mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.35A | 3.5Ohm | 2 N-Channel (Dual) | 28.5pF @ 30V | 2 Ω @ 50mA, 5V | 1V @ 250μA | 0.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L09FUTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 300mW | 2 | Dual | Other Transistors | 85 ns | 85 ns | 200mA | -1.8V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.4A | 30V | N and P-Channel | 20pF @ 5V | 700m Ω @ 200MA, 10V | 1.8V @ 100μA | 400mA 200mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC2450UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmc2450uv7-datasheets-8253.pdf | SOT-563, SOT-666 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 450mW | DUAL | FLAT | 260 | 30 | 2 | R-PDSO-F6 | 1.03A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.74A | 0.7Ohm | N and P-Channel | 37.1pF @ 10V | 480m Ω @ 200mA, 5V | 900mV @ 250μA | 1.03A 700mA | 0.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMGD280UN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-pmgd280un115-datasheets-8262.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 6 | 400mW | 2 | 870mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 400mW | 0.87A | 0.34Ohm | 2 N-Channel (Dual) | 45pF @ 20V | 340m Ω @ 200mA, 4.5V | 1V @ 250μA | 0.89nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UM6K31NTN | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | 150mW | GULL WING | 260 | 6 | 2 | 10 | 2 | FET General Purpose Power | 3.5 ns | 5ns | 28 ns | 18 ns | 250mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 60V | 2 N-Channel (Dual) | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTND31015NZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntnd31015nztag-datasheets-8281.pdf | 6-XFLGA | Lead Free | 6 | 5 Weeks | 6 | ACTIVE (Last Updated: 1 day ago) | yes | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 125mW | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | 200mA | SILICON | SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 125mW | 0.2A | 2 N-Channel (Dual) | 12.3pF @ 15V | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD223PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-bsd223ph6327xtsa1-datasheets-8135.pdf | -20V | -350mA | 6-VSSOP, SC-88, SOT-363 | 2mm | 800μm | 1.25mm | Contains Lead | 6 | 10 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | 8541.21.00.95 | AEC-Q101 | Halogen Free | 250mW | GULL WING | NOT SPECIFIED | BSD223 | NOT SPECIFIED | 2 | 3.8 ns | 5ns | 5.1 ns | 390mA | 12V | -20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | METAL-OXIDE SEMICONDUCTOR | 0.39A | 22 pF | 2 P-Channel (Dual) | 56pF @ 15V | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| NX3008NBKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008nbkv115-datasheets-7953.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | FLAT | 6 | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 0.39W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 500mW | 0.4A | 2 N-Channel (Dual) | 50pF @ 15V | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 400mA | 0.68nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG1016V-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmg1016v7-datasheets-8316.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 15 Weeks | 3.005049mg | No SVHC | 700mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 530mW | DUAL | FLAT | DMG1016V | 6 | 530mW | 2 | 5.1 ns | 8.1ns | 20.7 ns | 28.4 ns | 640mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.87A | N and P-Channel | 60.67pF @ 16V | 400m Ω @ 600mA, 4.5V | 1V @ 250μA | 870mA 640mA | 0.74nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| PMGD290XN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-pmgd290xn115-datasheets-8187.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | 6 | 30 | 410mW | 2 | 860mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 410mW | 0.35Ohm | 2 N-Channel (Dual) | 34pF @ 20V | 350m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 0.72nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDT290UNE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmdt290une115-datasheets-8335.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 500mW | FLAT | 6 | Dual | 390mW | 2 | 6 ns | 4ns | 31 ns | 86 ns | 800mA | 8V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 500mW | 0.8A | 0.38Ohm | 20V | 2 N-Channel (Dual) | 83pF @ 10V | 380m Ω @ 500mA, 4.5V | 950mV @ 250μA | 0.68nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTJD4105CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntjd4105ct2g-datasheets-6244.pdf | 630mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 19 Weeks | No SVHC | 220mOhm | 6 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 270mW | GULL WING | 260 | NTJD4105C | 6 | Dual | 40 | 550mW | 2 | Other Transistors | 83 ns | 23ns | 36 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V 8V | METAL-OXIDE SEMICONDUCTOR | 920mV | 5 pF | -8V | N and P-Channel | 46pF @ 20V | 920 mV | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 630mA 775mA | 3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| DMN32D2LDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmn32d2ldf7-datasheets-8160.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2.2mm | 1mm | 1.35mm | 5 | 16 Weeks | No SVHC | 5 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 280mW | GULL WING | 260 | 5 | 2 | 40 | 2 | FET General Purpose Power | 400mA | 10V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.4A | 30V | 2 N-Channel (Dual) Common Source | 39pF @ 3V | 1.2 Ω @ 100mA, 4V | 1.2V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002BKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002bks115-datasheets-8142.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 295mW | 0.3A | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 300mA | 0.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTZD5110NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntzd5110nt1g-datasheets-8130.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.3mm | Lead Free | 6 | 4 Weeks | 1.6Ohm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | 900mW | FLAT | 260 | NTZD5110N | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 12 ns | 7.3ns | 7.3 ns | 63.7 ns | 294mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 60V | 2 N-Channel (Dual) | 24.5pF @ 20V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| DMP2200UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp2200udw13-datasheets-0928.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 15 Weeks | 6 | EAR99 | Tin | e3 | 450mW | GULL WING | 260 | 30 | 2 | 9.8 ns | 88ns | 45 ns | 24.4 ns | 900mA | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.9A | 2 P-Channel (Dual) | 184pF @ 10V | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 2.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7324TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7324trpbf-datasheets-6998.pdf | -20V | -9A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 18mOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | IRF7324PBF | Dual | 30 | 2W | 2 | Other Transistors | 150°C | 17 ns | 36ns | 190 ns | 170 ns | -9A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 270 ns | 9A | 71A | -20V | 2 P-Channel (Dual) | 2940pF @ 15V | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 9A | 63nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SSM6N7002CFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 285mW | 170mA | 60V | 285mW | 2 N-Channel (Dual) | 17pF @ 10V | 3.9 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.35nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008PBKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008pbks115-datasheets-7993.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 4 Weeks | 6 | Tin | No | e3 | 445mW | 6 | Dual | 445mW | 2 | 19 ns | 30ns | 38 ns | 65 ns | 200mA | 8V | -30V | 30V | -30V | 2 P-Channel (Dual) | 46pF @ 15V | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002PS,125 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002ps125-datasheets-7999.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | 6 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 420mW | GULL WING | 6 | 320mW | 2 | 3 ns | 4ns | 5 ns | 10 ns | 320mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 420mW | 60V | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 0.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| UM6K34NTCN | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-um6k34ntcn-datasheets-7637.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 16 Weeks | yes | EAR99 | 120mW | GULL WING | 260 | 6 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | 200mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 120mW | 0.2A | 2.8Ohm | 2 N-Channel (Dual) | 26pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | Logic Level Gate, 0.9V Drive |
