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ContactRectifier Diode Array (12345)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration |
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| VB10150C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vb10150cm34w-datasheets-5329.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 150°C | Common Cathode | NOT SPECIFIED | 2 | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | Schottky | 150V | 5A | 60A | 1 | 5A | 100μA @ 150V | 1.41V @ 5A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||
| UGB10CCT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | UGB10CCT | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | 10A | 55A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 55A | 150V | 25 ns | 25 ns | Standard | 150V | 5A | 1 | 5A | 10μA @ 150V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||
| VS-12CTQ035S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs12ctq045strrm3-datasheets-9258.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 175°C | Common Cathode | 40 | 2 | R-PSSO-G2 | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | Schottky | 35V | 6A | 140A | 1 | 800μA @ 35V | 600mV @ 6A | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||
| VF20M120C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vf20m120cm34w-datasheets-5338.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 150°C | Common Cathode | NOT SPECIFIED | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | TO-220AB | Schottky | 120V | 10A | 120A | 1 | 700μA @ 120V | 910mV @ 10A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||
| UGB10BCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | UGB10BCT | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | 10A | 55A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 55A | 100V | 25 ns | 25 ns | Standard | 100V | 5A | 1 | 5A | 10μA @ 100V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||
| SSRD8620CTT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | /files/onsemiconductor-msrd620ctt4g-datasheets-0723.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | R-PSSO-G2 | 6A | ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 200V | 5μA | 55ns | Standard | 1 | 3A | 5μA @ 200V | 1.35V @ 6A | 3A | -55°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
| SBR1060CT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Through Hole | Through Hole | Tube | 1 (Unlimited) | Radial | 150°C | -65°C | ROHS3 Compliant | 2010 | /files/diodesincorporated-sbr1060ctfp-datasheets-8990.pdf | TO-220-3 | 10.4mm | 8.89mm | 4.82mm | Lead Free | 3 | 14 Weeks | 6.000006g | 3 | no | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 260 | 3 | Common Cathode | 40 | 2 | Rectifier Diodes | Not Qualified | 10A | 680mV | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120A | 500μA | 60V | 120A | TO-220AB | Super Barrier | 60V | 5A | 1 | 5A | 500μA @ 60V | 680mV @ 5A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||
| MBR2060CT-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/comchiptechnology-mbr20150ctg-datasheets-8695.pdf | TO-220-3 | 3 | 12 Weeks | FREE WHEELING DIODE, LOW POWER LOSS | SINGLE | NOT SPECIFIED | 150°C | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-220AB | Schottky | 60V | 20A | 150A | 1 | 10A | 100μA @ 60V | 950mV @ 20A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||
| TSI30H100CW C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsi30h200cwc0g-datasheets-0324.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14 Weeks | I2PAK | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 250μA @ 100V | 780mV @ 15A | 15A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB10DCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | UGB10DCT | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | 10A | 55A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 55A | 200V | 25 ns | 25 ns | Standard | 200V | 5A | 1 | 5A | 10μA @ 200V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||
| MBRB10200CT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/diodesincorporated-mbrb10200ct13-datasheets-6693.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | Common Cathode | 10 | 2 | R-PSSO-G2 | 10A | 910mV | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 110A | 100μA | 200V | Schottky | 200V | 5A | 1 | 5A | 200V | 100μA @ 200V | 910mV @ 5A | -55°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||
| MBR2080CT-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 1997 | /files/comchiptechnology-mbr20150ctg-datasheets-8695.pdf | TO-220-3 | 3 | 12 Weeks | FREE WHEELING DIODE, LOW POWER LOSS | SINGLE | NOT SPECIFIED | 150°C | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-220AB | Schottky | 80V | 20A | 150A | 1 | 10A | 100μA @ 80V | 950mV @ 20A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||
| UGB10CCTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | UGB10CCT | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | 10A | 55A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 55A | 150V | 25 ns | 25 ns | Standard | 150V | 5A | 1 | 5A | 10μA @ 150V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||
| MBR2050CT-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/comchiptechnology-mbr20150ctg-datasheets-8695.pdf | TO-220-3 | 3 | 12 Weeks | FREE WHEELING DIODE, LOW POWER LOSS | SINGLE | NOT SPECIFIED | 150°C | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-220AB | Schottky | 50V | 20A | 150A | 1 | 10A | 100μA @ 50V | 950mV @ 20A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||
| VF20100C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vf20100cm34w-datasheets-5269.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSFM-T3 | 20A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | 100V | 150A | TO-220AB | Schottky | 100V | 10A | 1 | 800μA @ 100V | 790mV @ 10A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||
| VS-15CTQ035S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs15ctq035strlm3-datasheets-9191.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 150°C | Common Cathode | 40 | 2 | R-PSSO-G2 | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | Schottky | 35V | 7.5A | 145A | 1 | 800μA @ 35V | 550mV @ 7.5A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||
| SRF2040 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-srf2090c0g-datasheets-5164.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 10A | 20A | -55°C~125°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSF10H120C C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-tsf10h200cc0g-datasheets-2112.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | SINGLE | 150°C | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120V | 100μA | TO-220AB | Schottky | 100A | 1 | 5A | 120V | 100μA @ 120V | 740mV @ 5A | 5A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||
| STPS30L120CR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stps30l120cfp-datasheets-6297.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | Lead Free | 3 | 11 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STPS30L120 | 3 | Common Cathode | 2 | Rectifier Diodes | 30A | 1.08V | 220A | 200μA | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220A | 200μA | 120V | 220A | Schottky | 120V | 15A | 1 | 200μA @ 120V | 880mV @ 15A | 150°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||
| MBR1090CT-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-mbr1090ctm34w-datasheets-5279.pdf | TO-220-3 | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 90V | 10A | 120A | 1 | 5A | 90V | 100μA @ 90V | 800mV @ 10A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||
| VF10150C-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vi10150ce34w-datasheets-4873.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | No | 8541.10.00.80 | e3 | SINGLE | 3 | Common Cathode | 2 | 10A | 60A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 150V | 60A | TO-220AB | Schottky | 150V | 5A | 1 | 5A | 100μA @ 150V | 1.41V @ 5A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||
| NTSV20H120ECTG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntsv20h120ectg-datasheets-5186.pdf | TO-220-3 | Lead Free | 3 | 10 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 175°C | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | TO-220AB | Schottky | 120V | 10A | 125A | 1 | 25μA @ 120V | 1V @ 10A | -40°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||
| BYQ28EF-200HE3/45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYQ28EF-150-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | 10A | 55A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 55A | 150V | TO-220AB | 25 ns | 25 ns | Standard | 150V | 5A | 1 | 5A | 10μA @ 150V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
| VT3060G-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vbt3060ge34w-datasheets-4787.pdf | TO-220-3 | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 60V | 15A | 150A | 1 | 850μA @ 60V | 730mV @ 15A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||
| SRF16150 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-srf16150c0g-datasheets-5200.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 550mV @ 8A | 16A | -55°C~125°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V20PWM45CHM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-v20pwm45cm3i-datasheets-1211.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10 Weeks | unknown | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 200μA @ 45V | 620mV @ 10A | 10A | -40°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VT1060C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vit1060cm34w-datasheets-4928.pdf | TO-220-3 | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Not Qualified | R-PSFM-T3 | 10A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | 60V | 100A | TO-220AB | Schottky | 60V | 5A | 1 | 5A | 700μA @ 60V | 700mV @ 5A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||
| BYQ28EB-200HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 30 | 2 | Rectifier Diodes | R-PSSO-G2 | 10A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 55A | 25 ns | Standard | 200V | 5A | 1 | 5A | 10μA @ 200V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||
| BYQ28EF-100-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byq28e200e345-datasheets-3437.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | 10A | 55A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 55A | 100V | TO-220AB | 25 ns | 25 ns | Standard | 100V | 5A | 1 | 5A | 10μA @ 100V | 1.1V @ 5A | -40°C~150°C | 1 Pair Common Cathode |
