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ContactRectifier Diode Array (12345)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration |
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| SBS818-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2013 | /files/onsemiconductor-sbs818tle-datasheets-4638.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 8 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | 8 | Dual | 2 | Other Diodes | 2A | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 20A | 350μA | 15V | 10 ns | Schottky | 30V | 2A | 1 | 1.5A | 350μA @ 15V | 520mV @ 2A | -55°C~125°C | 2 Independent | ||||||||||||||||||||||||||||
| SBT100-16LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2006 | /files/onsemiconductor-sbt10016ls-datasheets-4640.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | EAR99 | HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | Common Cathode | 2 | Not Qualified | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AB | Schottky | 160V | 10A | 100A | 1 | 150μA @ 160V | 880mV @ 5A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||
| SBS817-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2013 | /files/onsemiconductor-sbs817tle-datasheets-4613.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 8 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | DUAL | 8 | Common Cathode | 2 | Other Diodes | 2A | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15V | 20A | 300μA | 7.5V | 10 ns | Schottky | 15V | 2A | 1 | 2A | 300μA @ 7.5V | 460mV @ 2A | -55°C~125°C | 2 Independent | |||||||||||||||||||||||||||
| SBT250-04R | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tray | 1 (Unlimited) | RoHS Compliant | 2005 | /files/onsemiconductor-sbt25004r-datasheets-4641.pdf | TO-3P-3 Full Pack | Lead Free | 3 | SBT250-04 | Common Cathode | TO-3PML | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 25A | 40V | 300μA @ 20V | 550mV @ 10A | 25A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||
| VS-20CWT10HE3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20CWT10-E3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV32G-200,127 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | IEC-60134 | NO | SINGLE | BYV32-200 | 150°C | 2 | R-PSIP-T3 | ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 30μA | 25ns | Standard | 137A | 1 | 200V | 30μA @ 200V | 850mV @ 8A | 20A | 150°C Max | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||
| MBRTA40020L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | Three Tower | 3 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | Common Cathode | 2 | R-PUFM-X3 | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 20V | 200A | 3000A | 1 | 3mA @ 20V | 580mV @ 200A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||
| MBR2045CT-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-mbr2045cte1-datasheets-4597.pdf | TO-220-3 | 5 Weeks | TO-220-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 100μA @ 45V | 650mV @ 10A | 10A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MB20H90CTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-mb20h100cthe3ai-datasheets-3742.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 4.5μA @ 90V | 770mV @ 10A | 10A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20AWT04TRL-E3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20AWT04TR-E3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRTA40035L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | Three Tower | 3 | UPPER | UNSPECIFIED | 150°C | Common Cathode | 2 | R-PUFM-X3 | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 35V | 200A | 3000A | 1 | 3mA @ 35V | 600mV @ 200A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||
| BAV99/8,235 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | /files/nexperiausainc-bav99235-datasheets-6458.pdf | TO-236-3, SC-59, SOT-23-3 | 13 Weeks | 3 | EAR99 | Tin | 8541.10.00.70 | BAV99 | Rectifier Diodes | 215mA | 1.25V | Fast Recovery =< 500ns, > 200mA (Io) | 100V | 4A | 4 ns | Standard | 100V | 215mA | 0.215A | 500nA @ 80V | 1.25V @ 150mA | 215mA DC | 150°C Max | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||
| VS-20CWT10TRL-E3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MB30H90CTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-mb30h100cthe3ap-datasheets-3289.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 5μA @ 90V | 820mV @ 15A | 15A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR30100CTF-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr30100ctfe1-datasheets-4583.pdf | TO-220-3 Full Pack | 5 Weeks | TO-220F-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 850mV @ 15A | 15A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||
| LFUSCD30120B | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/littelfuseinc-lfuscd30120b-datasheets-4607.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | EAR99 | PD-CASE | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | Common Cathode | NOT SPECIFIED | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | 374W | 375μA | Silicon Carbide Schottky | 1.2kV | 15A | 120A | 1 | 1200V | 375μA @ 1200V | 1.7V @ 15A | 15A DC | 175°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||
| MBRF20150CT-LJ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-mbrf20150ctlj-datasheets-4585.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 5 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | NOT SPECIFIED | 175°C | Common Cathode | NOT SPECIFIED | 2 | R-PSFM-T3 | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | TO-220AB | Schottky | 150V | 10A | 170A | 1 | 50μA @ 150V | 900mV @ 10A | -55°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
| MBRB2035CTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-mbrb2045cte345-datasheets-3387.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 245 | 150°C | 30 | 2 | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35V | 100μA | Schottky | 150A | 1 | 10A | 35V | 100μA @ 35V | 650mV @ 10A | 10A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
| 1SS184S,LF(D | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.10.00.70 | DUAL | GULL WING | 125°C | Common Cathode | 2 | R-PDSO-G3 | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.15W | 4ns | Standard | 80V | 100mA | 0.1A | 500nA @ 80V | 1.2V @ 100mA | 125°C Max | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||
| VS-20AWT04TRLHE3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRTA60040L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | Three Tower | 3 | UPPER | UNSPECIFIED | 150°C | Common Cathode | 2 | R-PUFM-X3 | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 40V | 300A | 4000A | 1 | 5mA @ 40V | 600mV @ 300A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||
| MBRF600100 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | TO-244AB | 2 | UPPER | UNSPECIFIED | 150°C | Common Cathode | 2 | R-PUFM-X2 | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | Schottky | 100V | 250A | 4000A | 1 | 300A | 1mA @ 100V | 840mV @ 250A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||
| MBR20200CT-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr20200ctfe1-datasheets-4541.pdf | TO-220-3 | 5 Weeks | TO-220-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200V | 50μA @ 200V | 900mV @ 10A | 10A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR20H100CTF-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr20h100cte1-datasheets-4539.pdf | TO-220-3 Full Pack | 5 Weeks | TO-220F-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 4.5μA @ 100V | 770mV @ 10A | 10A | -65°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRTA40030RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | Three Tower | 3 | UPPER | UNSPECIFIED | 150°C | Common Anode | 2 | R-PUFM-X3 | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 30V | 200A | 3000A | 1 | 3mA @ 30V | 580mV @ 200A | -55°C~150°C | 1 Pair Common Anode | |||||||||||||||||||||||||||||||||||||||||
| MBR30H100CTF-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr30h100ctfe1-datasheets-4568.pdf | TO-220-3 Full Pack | 3 | 5 Weeks | EAR99 | LOW NOISE | unknown | 8541.10.00.80 | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 2 | R-PSFM-T3 | ISOLATED | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | TO-220AB | Schottky | 250A | 1 | 15A | 100V | 4.5μA @ 100V | 800mV @ 15A | 15A | -65°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
| MBR20100CDTR-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-mbr20100cde1-datasheets-4533.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 100μA | Schottky | 150A | 1 | 10A | 100V | 100μA @ 100V | 850mV @ 10A | 10A | -65°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||
| MBR20100CD-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/diodesincorporated-mbr20100cde1-datasheets-4533.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 100μA | Schottky | 150A | 1 | 10A | 100V | 100μA @ 100V | 850mV @ 10A | 10A | -65°C~150°C | 1 Pair Common Cathode |
