Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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IRGI4059DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | Standard | 2014 | TO-220-3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STGW45NC60WD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw45nc60wd-datasheets-5280.pdf | TO-247-3 | 16.03mm | 21.09mm | 5.16mm | Lead Free | 3 | 38.000013g | yes | EAR99 | No | e3 | Tin (Sn) | 285W | STGW45 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | POWER CONTROL | N-CHANNEL | 285W | TO-247AC | 45 ns | 600V | 46 ns | 600V | 90A | 280 ns | 390V, 30A, 10 Ω, 15V | 20V | 5.75V | 2.6V @ 15V, 30A | 126nC | 230A | 33ns/168ns | 302μJ (on), 349μJ (off) | |||||||||||||||||||||||||||||||||||||
IXGP12N60C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2002 | /files/ixys-ixgp12n60c-datasheets-5220.pdf | TO-220-3 | 3 | 2.299997g | 3 | yes | 100W | NOT SPECIFIED | IXG*12N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-220AB | 600V | 40 ns | 600V | 24A | 170 ns | 480V, 12A, 18 Ω, 15V | 20V | 5V | 2.7V @ 15V, 12A | 32nC | 48A | 20ns/60ns | 90μJ (off) | 180ns | ||||||||||||||||||||||||||||||||||||||||
IRGB4064DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2006 | /files/infineontechnologies-irgb4064dpbf-datasheets-5222.pdf | TO-220-3 | 10.66mm | 9.02mm | 4.82mm | Lead Free | 3 | 99 Weeks | 6.000006g | No SVHC | 3 | EAR99 | No | 101W | Single | 101W | 1 | Insulated Gate BIP Transistors | 27 ns | 15ns | 79 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 62 ns | 600V | 1.6V | 43 ns | 1.91V | 20A | 131 ns | 400V, 10A, 22 Ω, 15V | 6.5V | 1.91V @ 15V, 10A | Trench | 21nC | 40A | 27ns/79ns | 29μJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||
IRGS15B60KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irgs15b60kdpbf-datasheets-5230.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.652mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | ULTRA FAST | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 208W | GULL WING | 260 | IRGS15B60KDPBF | Single | 30 | 139W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 208W | 92 ns | 600V | 1.8V | 52 ns | 2.2V | 31A | 25ns | 231 ns | 400V, 15A, 22 Ω, 15V | 20V | 5.5V | 2.2V @ 15V, 15A | NPT | 56nC | 62A | 34ns/184ns | 220μJ (on), 340μJ (off) | ||||||||||||||||||||||||||||||
FGPF30N30TDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2007 | /files/onsemiconductor-fgpf30n30tdtu-datasheets-5239.pdf | TO-220-3 Full Pack | 3 | 44.6W | FGPF30N30 | Single | 22 ns | 300V | 300V | 200V, 20A, 20 Ω, 15V | 1.5V @ 15V, 10A | Trench | 65nC | 80A | 22ns/130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRG4BC15UDSTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg4bc15udstrlp-datasheets-5240.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 260.39037mg | 3 | No | e3 | MATTE TIN | 49W | GULL WING | Single | 1 | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 49W | 28 ns | 600V | 37 ns | 2.4V | 14A | 400 ns | 480V, 7.8A, 75 Ω, 15V | 2.4V @ 15V, 7.8A | 23nC | 42A | 17ns/160ns | 240μJ (on), 260μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
STGD8NC60KT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd8nc60kt4-datasheets-5110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | No | e3 | Matte Tin (Sn) | 62W | 225 | STGD8 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 62W | 600V | 600V | 600V | 15A | 390V, 3A, 10 Ω, 15V | 20V | 6.5V | 2.75V @ 15V, 3A | 19nC | 30A | 17ns/72ns | 55μJ (on), 85μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
FGP5N60UFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | 2008 | /files/onsemiconductor-fgp5n60ufdtu-datasheets-5250.pdf | TO-220-3 | TO-220-3 | 81W | 30ns | 600V | 10A | 400V, 5A, 20Ohm, 15V | 2.4V @ 15V, 5A | Field Stop | 19.5nC | 15A | 6ns/44ns | 75μJ (on), 59μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGB4061DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irgb4061dpbf-datasheets-5253.pdf | TO-220-3 | 10.66mm | 9.02mm | 4.82mm | Lead Free | 3 | 16 Weeks | 6.000006g | No SVHC | 3 | EAR99 | No | 206W | Single | 206W | 1 | Insulated Gate BIP Transistors | 40 ns | 25ns | 105 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 100 ns | 600V | 1.65V | 65 ns | 1.95V | 36A | 160 ns | 400V, 18A, 22 Ω, 15V | 20V | 6.5V | 1.95V @ 15V, 18A | Trench | 35nC | 72A | 40ns/105ns | 95μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||
IRG4BC20K-STRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 60W | 600V | 16A | 480V, 9A, 50 Ω, 15V | 2.8V @ 15V, 9A | 34nC | 32A | 28ns/150ns | 150μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGI4062DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | 2008 | TO-220-3 Full Pack | TO-220AB Full-Pak | 48W | 56ns | 600V | 22A | 400V, 12A, 10Ohm, 15V | 1.58V @ 15V, 12A | Trench | 48nC | 44A | 41ns/100ns | 31μJ (on), 183μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGSL10B60KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irgsl10b60kdpbf-datasheets-5264.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | Lead Free | 3 | 16 Weeks | 2.084002g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 156W | 260 | Single | 40 | 156W | 1 | Insulated Gate BIP Transistors | SILICON | MOTOR CONTROL | N-CHANNEL | 90 ns | 600V | 2.2V | 50 ns | 2.2V | 22A | 28ns | 276 ns | 400V, 10A, 47 Ω, 15V | 20V | 5.5V | 2.2V @ 15V, 10A | NPT | 38nC | 44A | 30ns/230ns | 140μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||
FGA90N33ATDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/onsemiconductor-fga90n33atdtu-datasheets-5272.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 36 Weeks | 6.401g | 3 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | MATTE TIN | 223W | Single | 1 | SILICON | POWER CONTROL | N-CHANNEL | 223W | 23 ns | 330V | 60 ns | 330V | 90A | 360 ns | 1.4V @ 15V, 20A | Trench | 95nC | 330A | ||||||||||||||||||||||||||||||||||||||||||||
IXSH25N120A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2000 | /files/ixys-ixsh25n120a-datasheets-5275.pdf | TO-247-3 | 3 | 6.500007g | 3 | yes | LOW SATURATION VOLTAGE | e3 | Matte Tin (Sn) | 200W | 260 | 3 | Single | 35 | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 200W | TO-247AD | 1.2kV | 300 ns | 1.2kV | 50A | 1200V | 1350 ns | 960V, 25A, 18 Ω, 15V | 20V | 8V | 4V @ 15V, 25A | 120nC | 80A | 100ns/450ns | 9.6mJ (off) | |||||||||||||||||||||||||||||||||||||||
STGB18N40LZ-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Logic | ROHS3 Compliant | /files/stmicroelectronics-stgb18n40lz1-datasheets-5277.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | yes | VOLTAGE CLAMPING | e3 | MATTE TIN | 150W | NOT SPECIFIED | STGB18 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 150W | 420V | 4450 ns | 360V | 30A | 22200 ns | 300V, 10A, 5V | 16V | 1.7V @ 4.5V, 10A | 29nC | 40A | 650ns/13.5μs | |||||||||||||||||||||||||||||||||||||||||||
IRGB4059DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2001 | /files/infineontechnologies-irgb4059dpbf-datasheets-5139.pdf | TO-220-3 | 10.66mm | 9.02mm | 4.82mm | Lead Free | 3 | 6.000006g | No SVHC | 3 | EAR99 | ULTRA FAST SOFT RECOVERY | No | 56W | Single | 56W | 1 | Insulated Gate BIP Transistors | 25 ns | 10ns | 65 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 55 ns | 2.2V | 1.75V | 35 ns | 2.05V | 8A | 600V | 120 ns | 400V, 4A, 100 Ω, 15V | 20V | 6.5V | 2.05V @ 15V, 4A | Trench | 9nC | 16A | 25ns/65ns | 35μJ (on), 75μJ (off) | 20ns | |||||||||||||||||||||||||||||||
STGB20NC60V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb20nc60v-datasheets-5090.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8.5mm | 4.6mm | 15mm | Lead Free | 2.240009g | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | 200W | STGB20 | Single | 31 ns | 100 ns | 60A | 600V | 600V | 1.8V | 600V | 60A | 390V, 20A, 3.3 Ω, 15V | 2.5V @ 15V, 20A | 100nC | 100A | 31ns/100ns | 220μJ (on), 330μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
IRG4RC10UDTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | 2004 | /files/infineontechnologies-irg4rc10udpbf-datasheets-5100.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | compliant | IRG4RC10UDPBF | 38W | 28ns | 600V | 8.5A | 480V, 5A, 100 Ω, 15V | 2.6V @ 15V, 5A | 15nC | 34A | 40ns/87ns | 140μJ (on), 120μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGH30N60B2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2003 | /files/ixys-ixgt30n60b2-datasheets-4886.pdf | TO-247-3 | 3 | 6.500007g | 3 | yes | 190W | NOT SPECIFIED | IXG*30N60 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-247AD | 600V | 30 ns | 600V | 70A | 350 ns | 400V, 24A, 5 Ω, 15V | 1.8V @ 15V, 24A | PT | 66nC | 150A | 13ns/110ns | 320μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
STGP8NC60K | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd8nc60kt4-datasheets-5110.pdf | TO-220-3 | Lead Free | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | 65W | NOT SPECIFIED | STGP8 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | 17 ns | 106 ns | SILICON | POWER CONTROL | N-CHANNEL | 65W | TO-220AB | 600V | 23 ns | 600V | 15A | 242 ns | 390V, 3A, 10 Ω, 15V | 20V | 6.5V | 2.75V @ 15V, 3A | 19nC | 30A | 17ns/72ns | 55μJ (on), 85μJ (off) | ||||||||||||||||||||||||||||||||||||||
IRG4BC30W-STRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 1998 | /files/infineontechnologies-irg4bc30wstrrp-datasheets-5167.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 11 Weeks | 3 | No | 100W | IRG4BC30W-SPBF | Single | D2PAK | 100W | 600V | 2.7V | 23A | 600V | 23A | 480V, 12A, 23Ohm, 15V | 2.7V @ 15V, 12A | 51nC | 92A | 25ns/99ns | 130μJ (on), 130μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGI4061DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | 2009 | TO-220-3 | 43W | 60ns | 600V | 20A | 400V, 11A, 22 Ω, 15V | 1.59V @ 15V, 11A | Trench | 35nC | 40A | 37ns/111ns | 52μJ (on), 231μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGSL6B60KPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | 2004 | /files/infineontechnologies-irgsl6b60kpbf-datasheets-5175.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 90W | 600V | 13A | 400V, 5A, 100 Ω, 15V | 2.2V @ 15V, 5A | NPT | 18.2nC | 26A | 25ns/215ns | 110μJ (on), 135μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRG4RC10UDTRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/infineontechnologies-irg4rc10udpbf-datasheets-5100.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 17 Weeks | LOW CONDUCTION LOSS | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | IRG4RC10UDPBF | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 38W | TO-252AA | 28ns | 56 ns | 600V | 8.5A | 345 ns | 480V, 5A, 100 Ω, 15V | 2.6V @ 15V, 5A | 15nC | 34A | 40ns/87ns | 140μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
FGA70N30TDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2007 | /files/onsemiconductor-fga70n30tdtu-datasheets-5185.pdf | TO-3P-3, SC-65-3 | 3 | 201W | Single | 21ns | 300V | 1.5V | 1.5V @ 15V, 20A | Trench | 125nC | 160A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGP4086PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/infineontechnologies-irgp4086pbf-datasheets-5186.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 160W | Single | 160W | Insulated Gate BIP Transistors | N-CHANNEL | 300V | 1.9V | 2.96V | 70A | 196V, 25A, 10 Ω | 5V | 2.96V @ 15V, 120A | Trench | 65nC | 36ns/112ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRG4RC10SDTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/infineontechnologies-irg4rc10sdpbf-datasheets-5071.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 17 Weeks | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 38W | GULL WING | 260 | IRG4RC10SDPBF | Single | 30 | 38W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-252AA | 28 ns | 600V | 1.7V | 106 ns | 1.8V | 14A | 1780 ns | 480V, 8A, 100 Ω, 15V | 20V | 6V | 1.8V @ 15V, 8A | 15nC | 18A | 76ns/815ns | 310μJ (on), 3.28mJ (off) | 1080ns | |||||||||||||||||||||||||||||||||||
IXGR40N60B2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/ixys-ixgr40n60b2d1-datasheets-4857.pdf | ISOPLUS247™ | 3 | No SVHC | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NPN | 167W | NOT SPECIFIED | IXG*40N60 | 3 | Single | NOT SPECIFIED | 167W | 1 | Not Qualified | 82ns | SILICON | ISOLATED | POWER CONTROL | 600V | 1.9V | 38 ns | 600V | 60A | 390 ns | 400V, 30A, 3.3 Ω, 15V | 1.9V @ 15V, 30A | PT | 100nC | 200A | 18ns/130ns | 400μJ (off) | |||||||||||||||||||||||||||||||||||||||
IRG4BC20UDSTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/infineontechnologies-irg4bc20udstrlp-datasheets-5201.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 60W | 60W | 37ns | 55 ns | 600V | 13A | 320 ns | 480V, 6.5A, 50 Ω, 15V | 20V | 6V | 2.1V @ 15V, 6.5A | 27nC | 52A | 39ns/93ns | 160μJ (on), 130μJ (off) | 170ns |
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