Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Clamping Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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IRG4BC20K-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2004 | /files/infineon-irg4bc20kspbf-datasheets-7915.pdf | 600V | 16A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | No | 60W | Single | 60W | D2PAK | 27ns | 60W | 600V | 2.8V | 2.8V | 16A | 600V | 16A | 480V, 9A, 50Ohm, 15V | 2.8V @ 15V, 9A | 34nC | 32A | 28ns/150ns | 150μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
IRG4BC10SD | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | Non-RoHS Compliant | 2000 | TO-220-3 | 2 | EAR99 | LOW CONDUCTION LOSS | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 38W | 28ns | 106 ns | 600V | 14A | 1780 ns | 480V, 8A, 100 Ω, 15V | 1.8V @ 15V, 8A | 15nC | 18A | 76ns/815ns | 310μJ (on), 3.28mJ (off) | |||||||||||||||||||||||||||||||||||||||||
IRG4BC20SDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2010 | /files/infineontechnologies-irg4bc20sdpbf-datasheets-4159.pdf | 600V | 19A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 18 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 60W | Single | 60W | 1 | 62 ns | 35ns | 1.04 μs | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 37 ns | 600V | 1.6V | 99 ns | 1.6V | 19A | 1780 ns | 480V, 10A, 50 Ω, 15V | 1.6V @ 15V, 10A | 27nC | 38A | 62ns/690ns | 320μJ (on), 2.58mJ (off) | ||||||||||||||||||||||||||||||
IRG4BC20UD-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/infineontechnologies-irg4bc20udstrrp-datasheets-5026.pdf | 600V | 13A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | 2 | 14 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 60W | GULL WING | 260 | Single | 30 | 60W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 15ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 37 ns | 600V | 2.1V | 55 ns | 2.1V | 13A | 320 ns | 480V, 6.5A, 50 Ω, 15V | 20V | 6V | 2.1V @ 15V, 6.5A | 27nC | 52A | 39ns/93ns | 160μJ (on), 130μJ (off) | 170ns | |||||||||||||||||||||||||
FGH50N6S2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2003 | /files/onsemiconductor-fgh50n6s2-datasheets-4172.pdf | 600V | 75A | TO-247-3 | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 463W | NOT SPECIFIED | Single | NOT SPECIFIED | 463W | 1 | Not Qualified | 13 ns | 15ns | 55 ns | SILICON | POWER CONTROL | N-CHANNEL | 600V | 1.9V | 28 ns | 2.7V | 75A | 180 ns | 390V, 30A, 3 Ω, 15V | 2.7V @ 15V, 30A | 70nC | 240A | 13ns/55ns | 260μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||
HGTP7N60A4D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | /files/onsemiconductor-hgtp7n60a4d-datasheets-4174.pdf | TO-220-3 | compliant | HGTP7N60 | 125W | 34ns | 600V | 34A | 390V, 7A, 25 Ω, 15V | 2.7V @ 15V, 7A | 37nC | 56A | 11ns/100ns | 55μJ (on), 60μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FGP40N6S2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | /files/onsemiconductor-fgh40n6s2-datasheets-4068.pdf | TO-220-3 | TO-220-3 | 290W | 600V | 75A | 390V, 20A, 3Ohm, 15V | 2.7V @ 15V, 20A | 35nC | 180A | 8ns/35ns | 115μJ (on), 195μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGB14C40LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | Logic | ROHS3 Compliant | 2000 | /files/infineontechnologies-irgb14c40lpbf-datasheets-4120.pdf | 430V | 14A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Contains Lead, Lead Free | 3 | 16 Weeks | 6.000006g | No SVHC | 3 | EAR99 | LOW SATURATION VOLTAGE | No | 125W | Single | 125W | 1 | Insulated Gate BIP Transistors | 900 ns | 2.4μs | 6 μs | SILICON | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 430V | TO-220AB | 430V | 1.4V | 3700 ns | 1.75V | 20A | 12V | 2.2V | 1.75V @ 5V, 14A | 27nC | 900ns/6μs | ||||||||||||||||||||||||||||||
IRG4BC10SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2007 | /files/infineontechnologies-irg4bc10spbf-datasheets-4127.pdf | 600V | 14A | TO-220-3 | Lead Free | No SVHC | 3 | No | 38W | Single | 38W | TO-220AB | 28ns | 38W | 600V | 1.58V | 1.8V | 14A | 600V | 14A | 480V, 8A, 100Ohm, 15V | 1.8V @ 15V, 8A | 15nC | 18A | 25ns/630ns | 140μJ (on), 2.58mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
FGH40N6S2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | /files/onsemiconductor-fgh40n6s2-datasheets-4068.pdf | 600V | 75A | TO-247-3 | Lead Free | 3 | 290W | Single | 290W | TO-247-3 | 10ns | 290W | 600V | 1.9V | 600V | 75A | 600V | 75A | 390V, 20A, 3Ohm, 15V | 2.7V @ 15V, 20A | 35nC | 180A | 8ns/35ns | 115μJ (on), 195μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
FGH60N6S2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | 2003 | /files/onsemiconductor-fgh60n6s2-datasheets-4130.pdf | TO-247-3 | TO-247-3 | 625W | 600V | 75A | 390V, 40A, 3Ohm, 15V | 2.5V @ 15V, 40A | 140nC | 320A | 18ns/70ns | 400μJ (on), 310μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRG4IBC30S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | Non-RoHS Compliant | 2001 | TO-220-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | N-CHANNEL | 45W | 40 ns | 600V | 23.5A | 1550 ns | 480V, 18A, 23 Ω, 15V | 1.6V @ 15V, 18A | 50nC | 68A | 22ns/540ns | 260μJ (on), 3.45mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
IRG4RC10KPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg4rc10kpbf-datasheets-4131.pdf | 600V | 9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 3 | No | 38W | Single | 38W | D-Pak | 38W | 600V | 2.62V | 2.62V | 9A | 600V | 9A | 480V, 5A, 100Ohm, 15V | 2.62V @ 15V, 5A | 19nC | 18A | 11ns/51ns | 160μJ (on), 100μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
IRG4BC30S-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | /files/infineontechnologies-irg4bc30sspbf-datasheets-4071.pdf | 600V | 34A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | No | 100W | IRG4BC30S-SPBF | Single | 100W | D2PAK | 22 ns | 18ns | 540 ns | 100W | 600V | 1.6V | 1.6V | 34A | 600V | 34A | 480V, 18A, 23Ohm, 15V | 1.6V @ 15V, 18A | 50nC | 68A | 22ns/540ns | 260μJ (on), 3.45mJ (off) | |||||||||||||||||||||||||||||||||||||||||
IRG4BC20FD-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 60W | 37ns | 600V | 16A | 480V, 9A, 50 Ω, 15V | 2V @ 15V, 9A | 27nC | 64A | 43ns/240ns | 250μJ (on), 640μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRG4BC15UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2000 | /files/infineontechnologies-irg4bc15udpbf-datasheets-4075.pdf | 600V | 14A | TO-220-3 | 10.5156mm | 15.24mm | 4.699mm | Contains Lead, Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | ULTRA FAST SOFT RECOVERY | No | 49W | Single | 49W | 1 | Insulated Gate BIP Transistors | 17 ns | 20ns | 160 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 28 ns | 600V | 1.95V | 37 ns | 2.4V | 14A | 400 ns | 480V, 7.8A, 75 Ω, 15V | 20V | 6V | 2.4V @ 15V, 7.8A | 23nC | 42A | 17ns/160ns | 240μJ (on), 260μJ (off) | ||||||||||||||||||||||||||||
IRG4BC30FPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2000 | /files/infineontechnologies-irg4bc30fpbf-datasheets-4082.pdf | 600V | 31A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | FAST SPEED | No | 100W | Single | 100W | 1 | Insulated Gate BIP Transistors | 21 ns | 15ns | 200 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 1.59V | 36 ns | 1.8V | 31A | 640 ns | 480V, 17A, 23 Ω, 15V | 1.8V @ 15V, 17A | 51nC | 124A | 21ns/200ns | 230μJ (on), 1.18mJ (off) | 270ns | |||||||||||||||||||||||||||||
FGH20N6S2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2003 | /files/onsemiconductor-fgh20n6s2-datasheets-4089.pdf | 600V | 28A | TO-247-3 | Lead Free | 125W | Single | 125W | 4.5ns | 600V | 2.2V | 600V | 28A | 390V, 7A, 25 Ω, 15V | 2.7V @ 15V, 7A | 30nC | 40A | 7.7ns/87ns | 25μJ (on), 58μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
FGB20N6S2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | /files/onsemiconductor-fgh20n6s2-datasheets-4089.pdf | 600V | 28A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | 125W | Single | TO-263AB | 4.5ns | 125W | 600V | 2.7V | 28A | 600V | 28A | 390V, 7A, 25Ohm, 15V | 2.7V @ 15V, 7A | 30nC | 40A | 7.7ns/87ns | 25μJ (on), 58μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
IRG4BC30KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2000 | /files/infineontechnologies-irg4bc30kdpbf-datasheets-4091.pdf | 600V | 28A | TO-220-3 | 10.5156mm | 8.763mm | 4.69mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 100W | Single | 100W | 1 | Insulated Gate BIP Transistors | 60 ns | 42ns | 160 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-220AB | 42 ns | 600V | 2.21V | 100 ns | 2.7V | 28A | 370 ns | 480V, 16A, 23 Ω, 15V | 20V | 6V | 2.7V @ 15V, 16A | 67nC | 56A | 60ns/160ns | 600μJ (on), 580μJ (off) | 120ns | ||||||||||||||||||||||||||
FGH30N6S2D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | /files/onsemiconductor-fgh30n6s2d-datasheets-4101.pdf | 600V | 45A | TO-247-3 | Lead Free | No SVHC | 3 | NPN | 167W | Single | 167W | TO-247-3 | 17ns | 167W | 46 ns | 600V | 2.5V | 600V | 45A | 600V | 45A | 390V, 12A, 10Ohm, 15V | 2.5V @ 15V, 12A | 23nC | 108A | 6ns/40ns | 55μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
IRG4BC20SD-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1997 | /files/infineontechnologies-irg4bc20sdspbf-datasheets-4103.pdf | 600V | 19A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 13 Weeks | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 60W | GULL WING | 260 | Single | 30 | 60W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 32ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 37 ns | 600V | 1.4V | 99 ns | 1.6V | 19A | 1780 ns | 480V, 10A, 50 Ω, 15V | 20V | 6V | 1.6V @ 15V, 10A | 27nC | 38A | 62ns/690ns | 320μJ (on), 2.58mJ (off) | |||||||||||||||||||||||||||||
IRG4BAC50W-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | Standard | 2017 | TO-273AA | 200W | 600V | 55A | 2.3V @ 15V, 27A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FGB30N6S2D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | 2001 | /files/onsemiconductor-fgh30n6s2d-datasheets-4101.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | FGB30N6 | TO-263AB | 167W | 46ns | 600V | 45A | 390V, 12A, 10Ohm, 15V | 2.5V @ 15V, 12A | 23nC | 108A | 6ns/40ns | 55μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRG4BC30UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2000 | /files/infineontechnologies-irg4bc30udpbf-datasheets-4111.pdf | 600V | 23A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | 100W | Single | 100W | 1 | Insulated Gate BIP Transistors | 40 ns | 21ns | 91 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 42 ns | 600V | 1.95V | 62 ns | 2.1V | 23A | 300 ns | 480V, 12A, 23 Ω, 15V | 20V | 6V | 2.1V @ 15V, 12A | 50nC | 92A | 40ns/91ns | 380μJ (on), 160μJ (off) | ||||||||||||||||||||||||||||
IRG4IBC30SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg4ibc30spbf-datasheets-4056.pdf | 600V | 23.5A | TO-220-3 Full Pack | 10.6172mm | 16.12mm | 4.826mm | Contains Lead, Lead Free | 3 | 16 Weeks | 2.299997g | No SVHC | 3 | EAR99 | No | 45W | SINGLE | Dual | 45W | 1 | Insulated Gate BIP Transistors | 22 ns | 19ns | 540 ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 1.6V | 40 ns | 1.6V | 23.5A | 1550 ns | 480V, 18A, 23 Ω, 15V | 20V | 6V | 1.6V @ 15V, 18A | 50nC | 47A | 22ns/540ns | 260μJ (on), 3.45mJ (off) | 590ns | ||||||||||||||||||||||||||
IRGP4050PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irgp4050pbf-datasheets-4064.pdf | 250V | 104A | TO-247-3 | Lead Free | 13 Weeks | 3 | 330W | Single | 330W | TO-247AC | 35ns | 330W | 250V | 1.9V | 1.9V | 104A | 250V | 104A | 180V, 30A, 5Ohm, 15V | 1.9V @ 15V, 30A | 230nC | 208A | 37ns/120ns | 45μJ (on), 125μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
IRGS14C40LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | Logic | RoHS Compliant | 2000 | /files/infineontechnologies-irgsl14c40lpbf-datasheets-3704.pdf | 430V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 4.83mm | Lead Free | 2 | 9 Weeks | No SVHC | 3 | EAR99 | LOW SATURATION VOLTAGE | No | e3 | MATTE TIN OVER NICKEL | 125W | GULL WING | 260 | IRGS14C40LPBF | Single | 30 | 125W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 900 ns | 2.8ns | 6 μs | SILICON | AUTOMOTIVE IGNITION | N-CHANNEL | 430V | 1.4V | 3700 ns | 1.75V | 20A | 12V | 2.2V | 1.75V @ 5V, 14A | 27nC | 900ns/6μs | |||||||||||||||||||||||||||
IRG4BC30W-SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1998 | /files/infineontechnologies-irg4bc30wstrrp-datasheets-5167.pdf | 600V | 23A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.83mm | 4.826mm | Contains Lead, Lead Free | 2 | 11 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 100W | SINGLE | GULL WING | 260 | IRG4BC30W-SPBF | Dual | 30 | 100W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 16ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 2.1V | 41 ns | 2.7V | 23A | 300 ns | 480V, 12A, 23 Ω, 15V | 20V | 6V | 2.7V @ 15V, 12A | 51nC | 92A | 25ns/99ns | 130μJ (on), 130μJ (off) | 100ns | |||||||||||||||||||||||
IRG4BC20FDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | Standard | RoHS Compliant | 1997 | /files/infineontechnologies-irg4bc20fdpbf-datasheets-3993.pdf | 600V | 16A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 16 Weeks | No SVHC | 3 | No | NPN | 60W | Single | 60W | TO-220AB | 20ns | 60W | 37 ns | 600V | 1.66V | 2V | 16A | 600V | 16A | 480V, 9A, 50Ohm, 15V | 2V @ 15V, 9A | 27nC | 64A | 43ns/240ns | 250μJ (on), 640μJ (off) |
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