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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AOD7B65M3 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 69W | 212ns | 650V | 14A | 400V, 7A, 43 Ω, 15V | 2.35V @ 15V, 7A | 14nC | 21A | 6ns/79ns | 108μJ (on), 99μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD5B65N1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 52W | 170ns | 650V | 10A | 400V, 5A, 60 Ω, 15V | 2.5V @ 15V, 5A | 9.2nC | 15A | 8ns/73ns | 81μJ (on), 49μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYA20N120B4HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Surface Mount | -55°C~175°C TJ | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/ixys-ixya20n120b4hv-datasheets-0631.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 29 Weeks | 375W | 47ns | 1200V | 76A | 800mV, 20A, 10 Ω, 15V | 2.1V @ 15V, 20A | PT | 44nC | 130A | 15ns/200ns | 3.9mJ (on), 1.6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGK100N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | TO-264 | Lead Free | 3 | 28 Weeks | yes | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 830W | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 35 ns | 285 ns | COLLECTOR | POWER CONTROL | N-CHANNEL | 2.5V | 285 ns | 1.7kV | 600A | 720 ns | 20V | 5V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRG7CH46UED | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG7PH44K10DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irg7ph44k10depbf-datasheets-9639.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | EAR99 | No | 320W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 320W | 130 ns | 1.2kV | 2.4V | 2.4V | 70A | 70ns | 1200V | 600V, 25A, 10 Ω, 15V | 7.5V | 2.4V @ 15V, 25A | 200nC | 100A | 75ns/315ns | 2.1mJ (on), 1.3mJ (off) | 115ns | |||||||||||||||||||||||||||||||||||||||||||
| IXYK140N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyk140n90c3-datasheets-0642.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | 1.63kW | SINGLE | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 1630W | 900V | 122 ns | 2.7V | 310A | 300 ns | 450V, 100A, 1 Ω, 15V | 20V | 5.5V | 2.7V @ 15V, 140A | 330nC | 840A | 40ns/145ns | 4.3mJ (on), 4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IKD04N60RATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/infineontechnologies-ikd04n60ratma1-datasheets-0644.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | No SVHC | 3 | no | EAR99 | LOW CONDUCTION LOSS | not_compliant | e3 | Tin (Sn) | Halogen Free | 75W | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 75W | 600V | 43 ns | 600V | 2.1V | 20 ns | 2.1V | 8A | 342 ns | 400V, 4A, 43 Ω, 15V | 20V | 5.7V | 2.1V @ 15V, 4A | Trench Field Stop | 27nC | 12A | 14ns/146ns | 90μJ (on), 150μJ (off) | ||||||||||||||||||||||||||
| IXA12IF1200PB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixa12if1200pb-datasheets-0648.pdf | TO-220-3 | 10.66mm | 16mm | 4.82mm | 3 | 28 Weeks | No SVHC | 3 | yes | EAR99 | e3 | PURE TIN | 85W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 85W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | POWER CONTROL | N-CHANNEL | TO-220AB | 350 ns | 1.2kV | 2.1V | 110 ns | 1.2kV | 20A | 1200V | 350 ns | 600V, 10A, 100 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 10A | PT | 27nC | 1.1mJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||||
| IRGP4790D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2014 | /files/infineontechnologies-irgp4790dpbf-datasheets-0255.pdf | TO-247-3 | 14 Weeks | No SVHC | 3 | EAR99 | 455W | NOT SPECIFIED | NOT SPECIFIED | 455W | 170 ns | 650V | 1.7V | 2V | 140A | 400V, 75A, 10 Ω, 15V | 2V @ 15V, 75A | 210nC | 225A | 50ns/200ns | 2.5mJ (on), 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGK320N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgk320n60a3-datasheets-0654.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 10.000011g | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1kW | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1kW | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | 63 ns | 290 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1000W | 600V | 1.05V | 139 ns | 1.25V | 320A | 1870 ns | 20V | 5V | 1.25V @ 15V, 100A | PT | 560nC | 700A | ||||||||||||||||||||||||||||||||
| IXGR72N60C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgr72n60c3d1-datasheets-0657.pdf | ISOPLUS247™ | 3 | 30 Weeks | yes | unknown | e1 | TIN SILVER COPPER | 200W | SINGLE | NOT SPECIFIED | IXG*72N60 | 3 | NOT SPECIFIED | 200W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 35ns | 600V | 2.1V | 62 ns | 2.7V | 75A | 244 ns | 480V, 50A, 2 Ω, 15V | 20V | 5.5V | 2.7V @ 15V, 50A | PT | 175nC | 400A | 27ns/77ns | 1.03mJ (on), 480μJ (off) | 110ns | ||||||||||||||||||||||||||||||
| NGTB75N60SWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2014 | /files/onsemiconductor-ngtb75n60swg-datasheets-0660.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 6 Weeks | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | 595W | NOT SPECIFIED | Single | NOT SPECIFIED | 595W | 80 ns | 600V | 1.7V | 2V | 100A | 400V, 75A, 10 Ω, 15V | 2V @ 15V, 75A | 310nC | 200A | 110ns/270ns | 1.5mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| SGD02N60BUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-sgd02n60buma1-datasheets-0671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | LOW CONDUCTION LOSS | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 30W | TO-252AA | 34 ns | 600V | 6A | 354 ns | 400V, 2A, 118 Ω, 15V | 2.4V @ 15V, 2A | NPT | 14nC | 12A | 20ns/259ns | 64μJ | |||||||||||||||||||||||||||||||||||||
| IXGH40N120C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh40n120c3d1-datasheets-0684.pdf | TO-247-3 | 3 | 30 Weeks | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 380W | SINGLE | NOT SPECIFIED | IXG*40N120 | 3 | NOT SPECIFIED | 380W | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 100ns | 1.2kV | 4.4V | 52 ns | 4.4V | 75A | 1200V | 475 ns | 600V, 30A, 3 Ω, 15V | 4.4V @ 15V, 30A | PT | 142nC | 180A | 17ns/130ns | 1.8mJ (on), 550μJ (off) | ||||||||||||||||||||||||||||||||
| IXBH42N250 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 28 Weeks | 500W | 1.7μs | 2500V | 104A | 1250V, 42A, 20 Ω, 15V | 3V @ 15V, 42A | 200nC | 400A | 72ns/445ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH75T65SHDTL4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-4 | 4 Weeks | 6.289g | No SVHC | 4 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | e3 | Tin (Sn) | 455W | NOT SPECIFIED | NOT SPECIFIED | 455W | 76 ns | 650V | 1.6V | 2.1V | 150A | 400V, 75A, 15 Ω, 15V | 2.1V @ 15V, 75A | Field Stop | 126nC | 300A | 55ns/189ns | 1.06mJ (on), 1.56mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| RGS50TSX2HRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | /files/rohmsemiconductor-rgs50tsx2hrc11-datasheets-0627.pdf | TO-247-3 | 8 Weeks | 395W | 1200V | 50A | 600V, 25A, 10 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 67nC | 75A | 37ns/140ns | 1.4mJ (on), 1.65mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYA20N120A4HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Surface Mount | -55°C~175°C TJ | 3 (168 Hours) | Standard | /files/ixys-ixya20n120a4hv-datasheets-0578.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 375W | 54ns | 1200V | 80A | 800mV, 20A, 10 Ω, 15V | 1.9V @ 15V, 20A | PT | 46nC | 135A | 12ns/275ns | 3.6mJ (on), 2.75mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXK300N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixxk300n60b3-datasheets-0629.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | AVALANCHE RATED | not_compliant | 2.3kW | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 2300W | 600V | 137 ns | 1.6V | 550A | 430 ns | 400V, 100A, 1 Ω, 15V | 20V | 5.5V | 1.6V @ 15V, 100A | PT | 460nC | 1140A | 50ns/190ns | 3.45mJ (on), 2.86mJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXGH25N160 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/ixys-ixgh25n160-datasheets-0579.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 6.500007g | yes | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | 3 | Single | 1 | R-PSFM-T3 | 47 ns | 86 ns | SILICON | COLLECTOR | N-CHANNEL | 300W | TO-247AD | 1.6kV | 283 ns | 1.6kV | 75A | 1600V | 526 ns | 4.7V @ 20V, 100A | NPT | 84nC | 200A | ||||||||||||||||||||||||||||||||||||||||
| STGWA25M120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa25m120df3-datasheets-0581.pdf | TO-247-3 | 30 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 375W | NOT SPECIFIED | STGWA25 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 375W | 265 ns | 1.2kV | 1.85V | 1.2kV | 50A | 1200V | 600V, 25A, 15 Ω, 15V | 20V | 7V | 2.3V @ 15V, 25A | Trench Field Stop | 85nC | 100A | 28ns/150ns | 850μJ (on), 1.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IXGH6N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/ixys-ixgh6n170a-datasheets-0585.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | EAR99 | e3 | Tin (Sn) | 75W | NOT SPECIFIED | IXG*6N170 | 3 | Single | NOT SPECIFIED | 75W | 1 | Insulated Gate BIP Transistors | Not Qualified | 46 ns | 220 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.7kV | 5.4V | 91 ns | 1.7kV | 6A | 1700V | 271 ns | 850V, 6A, 33 Ω, 15V | 20V | 5V | 7V @ 15V, 3A | NPT | 18.5nC | 14A | 46ns/220ns | 590μJ (on), 180μJ (off) | 65ns | |||||||||||||||||||||||||||
| IXXK100N60B3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-ixxk100n60b3h1-datasheets-0588.pdf | TO-264-3, TO-264AA Variation | 3 | 8 Weeks | 10.000011g | 3 | AVALANCHE RATED | unknown | 695W | IXX*N60 | 3 | Single | 695W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 140 ns | 600V | 1.8V | 92 ns | 600V | 200A | 350 ns | 360V, 70A, 2 Ω, 15V | 20V | 5.5V | 1.8V @ 15V, 70A | PT | 143nC | 440A | 30ns/120ns | 1.9mJ (on), 2mJ (off) | |||||||||||||||||||||||||||||||||||
| IXBT12N300HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixbt12n300hv-datasheets-0591.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | e3 | Matte Tin (Sn) | 160W | Insulated Gate BIP Transistors | N-CHANNEL | 160W | 1.4 μs | 3kV | 3.2V | 30A | 3000V | 1250V, 12A, 10 Ω, 15V | 20V | 5V | 3.2V @ 15V, 12A | 62nC | 100A | 64ns/180ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRG7CH42UEF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~175°C TJ | Bulk | Not Applicable | Standard | RoHS Compliant | Die | Die | 1.2kV | 1.4V | 1200V | 600V, 30A, 10Ohm, 15V | 1.4V @ 15V, 5A | 157nC | 25ns/229ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH50N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh50n120c3-datasheets-0597.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 28 Weeks | 3 | EAR99 | 750W | 3 | Single | 625W | 1 | Insulated Gate BIP Transistors | Not Qualified | 28 ns | 133 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 750W | TO-247AD | 1.2kV | 2.5V | 82 ns | 1.2kV | 100A | 1200V | 372 ns | 600V, 50A, 5 Ω, 15V | 20V | 5V | 3.5V @ 15V, 50A | 142nC | 240A | 28ns/133ns | 3mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||
| IXGX120N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgx120n60b3-datasheets-0600.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | unknown | e1 | TIN SILVER COPPER | 780W | NOT SPECIFIED | IXG*120N60 | 3 | Single | NOT SPECIFIED | 780W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 1.5V | 123 ns | 1.8V | 280A | 520 ns | 480V, 100A, 2 Ω, 15V | 20V | 5V | 1.8V @ 15V, 100A | PT | 465nC | 600A | 40ns/227ns | 2.9mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||||||
| IXGH72N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh72n60a3-datasheets-0603.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 540W | NOT SPECIFIED | IXG*72N60 | 3 | Single | NOT SPECIFIED | 540W | 1 | Insulated Gate BIP Transistors | Not Qualified | 6.6nF | 31 ns | 320 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 1.35V | 61 ns | 600V | 75A | 885 ns | 480V, 50A, 3 Ω, 15V | 20V | 5V | 1.35V @ 15V, 60A | PT | 230nC | 400A | 31ns/320ns | 1.38mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||
| FGH75T65SQDNL4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Standard | /files/onsemiconductor-fgh75t65sqdnl4-datasheets-0606.pdf | TO-247-4 | 9 Weeks | yes | compliant | e3 | Tin (Sn) | 375W | 134ns | 650V | 200A | 400V, 75A, 10 Ω, 15V | 2.1V @ 15V, 75A | Trench Field Stop | 152nC | 44ns/208ns | 1.25mJ (on), 1.26mJ (off) |
