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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQU2N90TU-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqu2n90tuws-datasheets-4692.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 6 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 15 ns | 35ns | 30 ns | 20 ns | 1.7A | 30V | 2.5W Ta 50W Tc | 900V | N-Channel | 500pF @ 25V | 7.2 Ω @ 850mA, 10V | 5V @ 250μA | 1.7A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| AOI950A70 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS5™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 56.5W Tc | N-Channel | 461pF @ 100V | 950m Ω @ 1A, 10V | 4.1V @ 250μA | 5A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18503Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 12 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | AVALANCHE RATED | Copper, Tin | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD18503 | Single | NOT SPECIFIED | 1 | 4.5 ns | 8.8ns | 2.6 ns | 15 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 3.1W Ta 120W Tc | 321A | 0.0062Ohm | 16 pF | 157 mJ | N-Channel | 2640pF @ 20V | 4.3m Ω @ 22A, 10V | 2.3V @ 250μA | 100A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| FDMC010N08C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | /files/onsemiconductor-fdmc010n08c-datasheets-4683.pdf | 8-PowerWDFN | 20 Weeks | ACTIVE (Last Updated: 20 hours ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 2.4W Ta 52W Tc | N-Channel | 1500pF @ 40V | 10m Ω @ 16A, 10V | 4V @ 90μA | 11A Ta 51A Tc | 22nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9383MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irf9383mtrpbf-datasheets-4595.pdf | DirectFET™ Isometric MX | Lead Free | 3 | 12 Weeks | 7 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 2.1W | 1 | Other Transistors | R-XBCC-N3 | 29 ns | 160ns | 110 ns | 115 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.1W Ta 113W Tc | 0.0029Ohm | -30V | P-Channel | 7305pF @ 15V | 2.9m Ω @ 22A, 10V | 2.4V @ 150μA | 22A Ta 160A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STL60NH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl60nh3ll-datasheets-4645.pdf | 30V | 30A | 8-PowerVDFN | Lead Free | 5 | 8.5mOhm | 8 | yes | EAR99 | LOW THRESHOLD | e3 | MATTE TIN | DUAL | NO LEAD | 260 | STL60 | 8 | 30 | 60W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-N5 | 65ns | 20 ns | 30 ns | 30A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tc | 16A | 64A | 150 mJ | 30V | N-Channel | 1810pF @ 25V | 8.5m Ω @ 8A, 10V | 1V @ 250μA | 30A Tc | 24nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||
| STU9HN65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu9hn65m2-datasheets-4736.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU9H | NOT SPECIFIED | 5.5A | 650V | 60W Tc | N-Channel | 325pF @ 100V | 820m Ω @ 2.5A, 10V | 4V @ 250μA | 5.5A Tc | 11.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N04-4M5L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqd50n044m5lge3-datasheets-4554.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | Unknown | 3 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 4 | 40 | 136W | 1 | FET General Purpose Powers | R-PSSO-G2 | 9 ns | 11ns | 11 ns | 39 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 1.5V | 136W Tc | 200A | 0.006Ohm | N-Channel | 5860pF @ 25V | 3.5m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| STU1HN60K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std1hn60k3-datasheets-3109.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 3 | EAR99 | No | STU1HN | Single | 27W | 1 | 7 ns | 10ns | 31 ns | 23 ns | 1.2A | 30V | 600V | 27W Tc | N-Channel | 140pF @ 50V | 8 Ω @ 600mA, 10V | 4.5V @ 50μA | 1.2A Tc | 9.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STD7NM64N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3.949996g | NRND (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD7 | 1 | Single | NOT SPECIFIED | 7 ns | 10ns | 12 ns | 26 ns | 5A | 25V | 60W Tc | 640V | N-Channel | 363pF @ 50V | 1.05 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI1R4A70 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 48W Tc | N-Channel | 354pF @ 100V | 1.4 Ω @ 1A, 10V | 4.1V @ 250μA | 3.8A Tc | 8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU95R3K7P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu95r3k7p7akma1-datasheets-4518.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | 950V | 22W Tc | N-Channel | 196pF @ 400V | 3.7 Ω @ 800mA, 10V | 3.5V @ 40μA | 2A Tc | 6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1R306P1,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 60V | 960mW Ta 170W Tc | N-Channel | 8100pF @ 30V | 1.28m Ω @ 50A, 10V | 2.5V @ 1mA | 100A Tc | 91nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS1E281BNTB1 | ROHM Semiconductor | $2.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rs1e281bntb1-datasheets-4159.pdf | 8-PowerTDFN | 5 | 16 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 28A | 112A | 0.0032Ohm | 190 mJ | N-Channel | 5100pF @ 15V | 2.3m Ω @ 28A, 10V | 2.5V @ 1mA | 28A Ta 80A Tc | 94nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDD9407L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd9407lf085-datasheets-4377.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 48 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 227W Tj | TO-252AA | 100A | 0.0024Ohm | 128 mJ | N-Channel | 6700pF @ 25V | 2.4m Ω @ 80A, 4.5V | 3V @ 250μA | 100A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NDB5060L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-ndb5060l-datasheets-4404.pdf | 60V | 26A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 26A | 60V | GULL WING | Single | 68W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 200ns | 102 ns | 45 ns | 26A | 16V | SILICON | DRAIN | SWITCHING | 68W Tc | 0.05Ohm | 60V | N-Channel | 840pF @ 30V | 35m Ω @ 13A, 10V | 2V @ 250μA | 26A Tc | 24nC @ 5V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| IPSA70R600CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipsa70r600ceakma1-datasheets-4549.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 86W Tc | 18A | 0.6Ohm | 55 mJ | N-Channel | 474pF @ 100V | 600m Ω @ 1A, 10V | 3.5V @ 210μA | 10.5A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIHFR1N60A-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | 3 | EAR99 | unknown | 36W | 1 | FET General Purpose Power | 1.4A | 30V | Single | 600V | 36W Tc | N-Channel | 229pF @ 25V | 7 Ω @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU5N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sihu5n50dge3-datasheets-4568.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | 3 | 8 Weeks | 329.988449mg | Unknown | 3 | No | 1 | Single | 1 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | DRAIN | SWITCHING | 3V | 104W Tc | 28.8 mJ | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TSM033NB04LCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm033nb04lcrrlg-datasheets-4419.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 107W Tc | N-Channel | 4456pF @ 20V | 3.3m Ω @ 21A, 10V | 2.5V @ 250μA | 21A Ta 121A Tc | 79nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8321LDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmc8321ldc-datasheets-4578.pdf | 8-PowerTDFN | 13 Weeks | 32.13mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | NOT SPECIFIED | 108A | 40V | 2.9W Ta 56W Tc | N-Channel | 3965pF @ 20V | 2.5m Ω @ 27A, 10V | 3V @ 250μA | 27A Ta 108A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB12N50FTM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb12n50ftmws-datasheets-4557.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 6 Weeks | 1.31247g | 700MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | No | Single | 165W | 1 | FET General Purpose Power | 21 ns | 45ns | 35 ns | 50 ns | 11.5A | 30V | 165W Tc | 500V | N-Channel | 1395pF @ 25V | 700m Ω @ 6A, 10V | 5V @ 250μA | 11.5A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHD3N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihd3n50dge3-datasheets-4436.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | 3 | No | SINGLE | GULL WING | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 9ns | 13 ns | 11 ns | 3A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 69W Tc | TO-252AA | 3A | 5.5A | 9 mJ | N-Channel | 175pF @ 100V | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP78N75F4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp78n75f4-datasheets-4616.pdf | TO-220-3 | Lead Free | 3 | 11mOhm | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STP78N | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25 ns | 33ns | 14 ns | 61 ns | 78A | 20V | SILICON | SWITCHING | 150W Tc | TO-220AB | 75V | N-Channel | 5015pF @ 25V | 11m Ω @ 39A, 10V | 4V @ 250μA | 78A Tc | 76nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIR826BDP-T1-RE3 | Vishay Siliconix | $1.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir826bdpt1re3-datasheets-3897.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5W Ta 83W Tc | N-Channel | 3030pF @ 40V | 5.1mOhm @ 15A, 10V | 3.8V @ 250μA | 19.8A Ta 80.8A Tc | 69nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86368-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86368f085-datasheets-4149.pdf | 8-PowerTDFN | 5 | 5 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 260 | NOT SPECIFIED | 1 | R-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 214W Tc | 80A | 0.0045Ohm | 82 mJ | N-Channel | 4350pF @ 40V | 4.5m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STD1NK60-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq1hnk60rap-datasheets-7505.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 2.4mm | 6.2mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | 260 | STD1NK | 3 | Single | 30 | 30W | 1 | FET General Purpose Power | 6.5 ns | 5ns | 25 ns | 19 ns | 1A | 30V | SILICON | SWITCHING | 3V | 30W Tc | 1A | 4A | 25 mJ | 600V | N-Channel | 156pF @ 25V | 8.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 1A Tc | 10nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| FQU20N06LTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqu20n06ltu-datasheets-4363.pdf&product=onsemiconductor-fqu20n06ltu-6830272 | 60V | 17.2A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 4 Weeks | 343.08mg | 60MOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 10 ns | 165ns | 70 ns | 35 ns | 17.2A | 20V | SILICON | SWITCHING | 2.5W Ta 38W Tc | 68.8A | 60V | N-Channel | 630pF @ 25V | 60m Ω @ 8.6A, 10V | 2.5V @ 250μA | 17.2A Tc | 13nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||
| TSM4NB60CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 20 Weeks | TO-251 (IPAK) | 600V | 50W Tc | N-Channel | 500pF @ 25V | 2.5Ohm @ 2A, 10V | 4.5V @ 250μA | 4A | 14.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS6H850NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/onsemiconductor-nttfs6h850ntag-datasheets-4329.pdf | 8-PowerWDFN | 18 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.2W Ta 107W Tc | N-Channel | 1140pF @ 40V | 9.5m Ω @ 10A, 10V | 4V @ 70μA | 11A Ta 68A Tc | 19nC @ 10V | 6V 10V | ±20V |
