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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI2303-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microcommercialco-si2303tp-datasheets-2541.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 22 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 10 | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 250mW Ta | 3A | 0.13Ohm | P-Channel | 226pF @ 100V | 180m Ω @ 2A, 4.5V | 3V @ 250μA | 3A Ta | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3404-TP | Micro Commercial Co | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-si3404tp-datasheets-2343.pdf | TO-236-3, SC-59, SOT-23-3 | 22 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 30V | 350mW | N-Channel | 820pF @ 15V | 28m Ω @ 5.8A, 10V | 3V @ 250μA | 5.8A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3415-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/microcommercialco-si3415tp-datasheets-2422.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | EAR99 | 260 | 10 | 20V | 350mW Ta | P-Channel | 1450pF @ 10V | 50m Ω @ 4A, 4.5V | 1V @ 250μA | 4A Ta | 17.2nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RT1C060UNTR | ROHM Semiconductor | $4.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rt1c060untr-datasheets-2513.pdf | 8-SMD, Flat Lead | 8 | 10 Weeks | yes | EAR99 | Tin | DUAL | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F8 | 30ns | 6A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 650mW Ta | 6A | 24A | 0.033Ohm | N-Channel | 870pF @ 10V | 28m Ω @ 6A, 4.5V | 1V @ 1mA | 6A Ta | 11nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| DMP3037LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp3037lss13-datasheets-2064.pdf | 8-SOIC (0.154, 3.90mm Width) | 931pF | 8 | 23 Weeks | 73.992255mg | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1 | 3.2 ns | 11.5ns | 30.8 ns | 55.8 ns | 5.8A | 20V | SILICON | SWITCHING | 30V | 1.2W Ta | 0.032Ohm | -30V | P-Channel | 931pF @ 15V | 32m Ω @ 7A, 10V | 2.4V @ 250μA | 5.8A Ta | 19.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NVTR01P02LT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntr1p02lt1g-datasheets-8804.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 9 Weeks | 3 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | Single | 400mW | 1 | Other Transistors | 7 ns | 15ns | 20 ns | 18 ns | 1.3A | 12V | SWITCHING | 20V | 20V | 400mW Ta | 0.22Ohm | P-Channel | 225pF @ 5V | 220m Ω @ 750mA, 4.5V | 1.25V @ 250μA | 1.3A Ta | 3.1nC @ 4V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| MCH6353-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-mch6353tlw-datasheets-2324.pdf | 6-SMD, Flat Leads | Lead Free | 5 Weeks | 7.512624mg | 6 | ACTIVE (Last Updated: 5 days ago) | yes | No | Halogen Free | 6 | 1 | Single | 1.4W | 8.4 ns | 48ns | 68 ns | 165 ns | 6A | 10V | 12V | 1.4W Ta | -12V | P-Channel | 1250pF @ 6V | 35m Ω @ 3A, 4.5V | 6A Ta | 12nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN028N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdn028n20-datasheets-2443.pdf | TO-236-3, SC-59, SOT-23-3 | 10 Weeks | 30mg | ACTIVE (Last Updated: 5 days ago) | yes | Single | 20V | 1.5W Tc | N-Channel | 600pF @ 10V | 28m Ω @ 5.2A, 4.5V | 1.5V @ 250μA | 6.1A Tc | 6nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LND01K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -25°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/microchiptechnology-lnd01k1g-datasheets-2435.pdf | SC-74A, SOT-753 | Lead Free | 5 | 6 Weeks | 29.993795mg | 5 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | FET General Purpose Power | 3.8 ns | 11ns | 6.4 ns | 1 ns | 330mA | 600mV | SILICON | SWITCHING | 360mW Ta | 0.33A | 9V | N-Channel | 46pF @ 5V | 1.4 Ω @ 100mA, 0V | 330mA Tj | Depletion Mode | 0V | +0.6V, -12V | |||||||||||||||||||||||||||||||||||||||||||||
| DMP32D5SFB-7B | Diodes Incorporated | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp32d5sfb7b-datasheets-2147.pdf | 3-UFDFN | 15 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 400mA | 30V | 500mW Ta | P-Channel | 100pF @ 15V | 2.4 Ω @ 200mA, 10V | 2.3V @ 250μA | 400mA Ta | 4nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1427EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1427edht1ge3-datasheets-2494.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 14 Weeks | No SVHC | 6 | EAR99 | No | DUAL | GULL WING | 6 | 1 | 1.56W | 1 | Other Transistors | 90 ns | 400ns | 2.3 μs | 5.2 μs | 2A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | -400mV | 1.56W Ta 2.8W Tc | 2A | -20V | P-Channel | 64m Ω @ 3A, 4.5V | 1V @ 250μA | 2A Tc | 21nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SQ2301ES-T1_GE3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2301est1ge3-datasheets-2208.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | TO-236 (SOT-23) | 20V | 3W Tc | P-Channel | 425pF @ 10V | 120mOhm @ 2.8A, 4.5V | 1.5V @ 250μA | 3.9A Tc | 8nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRF015P03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-rrf015p03tl-datasheets-2225.pdf | 3-SMD, Flat Lead | 2.1mm | 820μm | 1.8mm | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 3 | Single | 10 | 1 | Other Transistors | 12 ns | 8ns | 13 ns | 40 ns | 1.5A | 20V | SILICON | SWITCHING | 30V | 320mW Ta | 0.16Ohm | P-Channel | 230pF @ 10V | 160m Ω @ 1.5A, 10V | 2.5V @ 1mA | 1.5A Ta | 6.4nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSS127S-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-bss127ssn7-datasheets-9980.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 16 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.25W | 1 | FET General Purpose Power | 5 ns | 7.2ns | 168 ns | 28.7 ns | 70mA | 20V | SILICON | SWITCHING | 610mW Ta | 0.07A | 600V | N-Channel | 21.8pF @ 25V | 160 Ω @ 16mA, 10V | 4.5V @ 250μA | 50mA Ta | 1.08nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DMN601WKQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmn601wkq7-datasheets-2250.pdf | SC-70, SOT-323 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 300mA | 60V | 200mW Ta | N-Channel | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 300mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2307CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2307cdst1ge3-datasheets-1782.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 88MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 150°C | 5.5 ns | 40ns | 40 ns | 17 ns | -2.7A | 20V | SILICON | SWITCHING | 30V | -3V | 1.1W Ta 1.8W Tc | -30V | P-Channel | 340pF @ 15V | -3 V | 88m Ω @ 3.5A, 10V | 3V @ 250μA | 3.5A Tc | 6.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| NVMFS5834NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nvmfs5834nlwft1g-datasheets-1921.pdf | DFN | Lead Free | 5 | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3.6W | DUAL | FLAT | 5 | 1 | Single | 1 | FET General Purpose Power | 1.231nF | 10 ns | 56.4ns | 6.6 ns | 17.4 ns | 75A | 20V | DRAIN | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 276A | 9.3mOhm | 48 mJ | 9.3 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002 TR13 PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-2n7002trpbfree-datasheets-0393.pdf | TO-236-3, SC-59, SOT-23-3 | YES | FET General Purpose Power | Single | 60V | 350mW Ta | 0.115A | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tc | 0.59nC @ 4.5V | 5V 10V | 40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J801R,LF | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 6-SMD, Flat Leads | 12 Weeks | 20V | 1.5W Ta | P-Channel | 840pF @ 10V | 32.5m Ω @ 3A, 4.5V | 1V @ 1mA | 6A Ta | 12.8nC @ 4.5V | 1.5V 4.5V | +6V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMN70XPX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmn70xpx-datasheets-2313.pdf | SC-74, SOT-457 | 6 | 4 Weeks | IEC-60134 | DUAL | GULL WING | 6 | 1 | R-PDSO-G6 | 3.1A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 530mW Ta 4.46W Tc | 0.088Ohm | P-Channel | 550pF @ 10V | 88m Ω @ 3.1A, 4.5V | 900mV @ 250μA | 3.1A Ta | 7.5nC @ 4.5V | 1.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRL025P03FRATR | ROHM Semiconductor | $37.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | 6-SMD, Flat Leads | 16 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 30V | 1W Ta | P-Channel | 480pF @ 10V | 75m Ω @ 2.5A, 10V | 2.5V @ 1mA | 2.5A Ta | 12nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMXB40UNEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-pmxb40unez-datasheets-2394.pdf | 3-XDFN Exposed Pad | 3 | 4 Weeks | 3 | Tin | No | YES | DUAL | 3 | 1 | 6 ns | 21ns | 9 ns | 18 ns | 3.2A | 8V | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400mW Ta 8.33W Tc | 0.064Ohm | N-Channel | 556pF @ 10V | 45m Ω @ 3.2A, 4.5V | 900mV @ 250μA | 3.2A Ta | 11.6nC @ 4.5V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RW1C025ZPT2CR | ROHM Semiconductor | $5.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | SOT-563, SOT-666 | Lead Free | 6 | 10 Weeks | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | DUAL | FLAT | 260 | 6 | 10 | 1 | Other Transistors | 9 ns | 18ns | 50 ns | 110 ns | 2.5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 700mW Ta | P-Channel | 1300pF @ 10V | 65m Ω @ 2.5A, 4.5V | 1V @ 1mA | 2.5A Ta | 21nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| PMZ600UNELYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmz600unelyl-datasheets-2160.pdf | SC-101, SOT-883 | Lead Free | 3 | 8 Weeks | IEC-60134 | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | 600mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2.7W Tc | 0.6A | 3Ohm | N-Channel | 21.3pF @ 10V | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 600mA Tc | 0.7nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K59CTB,L3F | Toshiba Semiconductor and Storage | $0.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 3-SMD, No Lead | 12 Weeks | 3 | 2A | 40V | 1W Ta | N-Channel | 130pF @ 10V | 215m Ω @ 1A, 8V | 1.2V @ 1mA | 2A Ta | 1.1nC @ 4.2V | 1.8V 8V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTNS3A65PZT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntns3a65pzt5g-datasheets-2139.pdf | SC-101, SOT-883 | Lead Free | 4 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | 3 | Single | Other Transistors | 18 ns | 32ns | 84 ns | 178 ns | 281mA | 8V | 20V | 155mW Ta | 0.281A | P-Channel | 44pF @ 10V | 1.3 Ω @ 200mA, 4.5V | 1V @ 250μA | 281mA Ta | 1.1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CPH3459-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-cph3459tlw-datasheets-2024.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 6 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | not_compliant | e6 | 1 | FET General Purpose Power | 4 ns | 3.5ns | 45 ns | 14 ns | 500mA | 20V | Single | 200V | 1W Ta | 0.5A | N-Channel | 90pF @ 20V | 3.7 Ω @ 250mA, 10V | 2.6V @ 1mA | 500mA Ta | 2.4nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J355R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Ta | 6A | 0.0388Ohm | P-Channel | 1030pF @ 10V | 30.1m Ω @ 4A, 4.5V | 1V @ 1mA | 6A Ta | 16.6nC @ 4.5V | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN66D0LW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmn66d0lw7-datasheets-1988.pdf | SC-70, SOT-323 | 2.15mm | 1mm | 1.3mm | 3 | 5 Weeks | 6.010099mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Powers | 10 ns | 33 ns | 115mA | 20V | SILICON | SWITCHING | 60V | 60V | 200mW Ta | 6Ohm | N-Channel | 23pF @ 25V | 6 Ω @ 115mA, 5V | 2V @ 250μA | 115mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SSM3J46CTB(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, No Lead | 12 Weeks | 3 | No | 1W | 1W | 1 | Other Transistors | 2A | 8V | Single | 20V | 2A | P-Channel | 290pF @ 10V | 103m Ω @ 1.5A, 4.5V | 1V @ 1mA | 2A Ta | 4.7nC @ 4.5V | 1.5V 4.5V | ±8V |
