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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7463DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7463dpt1ge3-datasheets-1824.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 9.2mOhm | 8 | yes | EAR99 | No | S17-0173-Single | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 20 ns | 25ns | 25 ns | 200 ns | -18.6A | 20V | 40V | SILICON | DRAIN | SWITCHING | -3V | 1.9W Ta | 60A | -40V | P-Channel | -3 V | 9.2m Ω @ 18.6A, 10V | 3V @ 250μA | 11A Ta | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQP30N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp30n06-datasheets-1830.pdf | 60V | 30A | TO-220-3 | 10.1mm | 20.4mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 40MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 1 | Single | 79W | 1 | FET General Purpose Power | 175°C | 10 ns | 85ns | 40 ns | 35 ns | 30A | 25V | SILICON | SWITCHING | 4V | 79W Tc | TO-220AB | 280 mJ | 60V | N-Channel | 945pF @ 25V | 40m Ω @ 15A, 10V | 4V @ 250μA | 30A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| IRFZ44EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfz44epbf-datasheets-1840.pdf | 60V | 48A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 23mOhm | 3 | 2.54mm | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | Single | 30 | 110W | 1 | Not Qualified | 12 ns | 60ns | 70 ns | 48A | 20V | 60V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | TO-220AB | 220 mJ | 60V | N-Channel | 1360pF @ 25V | 4 V | 23m Ω @ 29A, 10V | 4V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STP24NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp24nf10-datasheets-1863.pdf | 100V | 26A | TO-220-3 | 10.4mm | 19.68mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 60mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP24N | 3 | 1 | Single | 85W | 1 | FET General Purpose Power | 175°C | 60 ns | 45ns | 20 ns | 50 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 2V | 85W Tc | TO-220AB | 24A | 220 mJ | 100V | N-Channel | 870pF @ 25V | 60m Ω @ 12A, 10V | 4V @ 250μA | 26A Tc | 41nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STF3LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf3ln80k5-datasheets-1869.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF3LN | 800V | 20W Tc | N-Channel | 102pF @ 100V | 3.25 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 2.63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7141DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si7141dpt1ge3-datasheets-0754.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 1.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 6.25W | 1 | Other Transistors | R-XDSO-C5 | 130 ns | 120ns | 55 ns | 100 ns | -60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -1V | 6.25W Ta 104W Tc | -20V | P-Channel | 14300pF @ 10V | 1.9m Ω @ 25A, 10V | 2.3V @ 250μA | 60A Tc | 400nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB65R310CFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r310cfdatma1-datasheets-1369.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 18 Weeks | 3 | no | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G2 | 11 ns | 7.5ns | 7 ns | 45 ns | 11.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104.2W Tc | 290 mJ | N-Channel | 1100pF @ 100V | 310m Ω @ 4.4A, 10V | 4.5V @ 400μA | 11.4A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6674TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf6674trpbf-datasheets-1549.pdf | DirectFET™ Isometric MZ | 6.35mm | 530μm | 5.05mm | 3 | 12 Weeks | No SVHC | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 7 ns | 12ns | 8.7 ns | 12 ns | 67A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.6W Ta 89W Tc | 98 mJ | 60V | N-Channel | 1350pF @ 25V | 4 V | 11m Ω @ 13.4A, 10V | 4.9V @ 100μA | 13.4A Ta 67A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86300DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms86300dc-datasheets-1392.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 5.85mm | Lead Free | 5 | 5 Weeks | 90mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ULTRA LOW RESISTANCE | No | FLAT | 1 | Single | 3.2W | 1 | FET General Purpose Power | 150°C | R-PDSO-F5 | 29 ns | 25ns | 9 ns | 35 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 3.2W Ta 125W Tc | MO-240AA | 60A | 260A | 240 mJ | 80V | N-Channel | 7005pF @ 40V | 3.3 V | 3.1m Ω @ 24A, 10V | 4.5V @ 250μA | 24A Ta 76A Tc | 101nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPD200N15N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd200n15n3gatma1-datasheets-1401.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 150W | 1 | R-PSSO-G2 | 14 ns | 11ns | 6 ns | 23 ns | 50A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150W Tc | 200A | 0.02Ohm | 170 mJ | N-Channel | 1820pF @ 75V | 20m Ω @ 50A, 10V | 4V @ 90μA | 50A Tc | 31nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17559Q5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd17559q5-datasheets-5723.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | 260 | CSD17559 | Single | 3.2W | 1 | FET General Purpose Power | 20 ns | 41ns | 14 ns | 32 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 1.4V | 3.2W Ta 96W Tc | 40A | 400A | 30V | N-Channel | 9200pF @ 15V | 1.15m Ω @ 40A, 10V | 1.7V @ 250μA | 40A Ta 100A Tc | 51nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BUK7610-100B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7610100b118-datasheets-1414.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 300W | 1 | R-PSSO-G2 | 33 ns | 45ns | 36 ns | 120 ns | 110A | 20V | 100V | SILICON | DRAIN | SWITCHING | 300W Tc | 75A | 629 mJ | 100V | N-Channel | 6773pF @ 25V | 10m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2012C | EPC | $6.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2012c-datasheets-1620.pdf | Die | 12 Weeks | Die Outline (4-Solder Bar) | 140pF | 5A | 200V | N-Channel | 140pF @ 100V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 5A Ta | 1.3nC @ 5V | 100 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N04LSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc014n04lsiatma1-datasheets-1611.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 3 | 39 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 1 | 2.5W | 1 | 150°C | R-PDSO-F3 | 16 ns | 55 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2.5W Ta 96W Tc | 400A | 0.002Ohm | 90 mJ | 40V | N-Channel | 4000pF @ 20V | 1.45m Ω @ 50A, 10V | 2V @ 250μA | 31A Ta 100A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUD50P06-15L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sud50p0615le3-datasheets-1667.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 15mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 3W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 70ns | 175 ns | 175 ns | -50A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 3W Ta 136W Tc | 80A | -60V | P-Channel | 4950pF @ 25V | -1 V | 15m Ω @ 17A, 10V | 3V @ 250μA | 50A Tc | 165nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUD50P04-09L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0409le3-datasheets-1671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 9.4mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 3W | 1 | Other Transistors | R-PSSO-G2 | 10 ns | 60ns | 140 ns | 145 ns | 50A | 20V | SILICON | DRAIN | 40V | -1V | 3W Ta 136W Tc | -40V | P-Channel | 4800pF @ 25V | -1 V | 9.4m Ω @ 24A, 10V | 3V @ 250μA | 50A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI7469DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7469dpt1ge3-datasheets-1434.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 25MOhm | 8 | yes | EAR99 | 27A | unknown | e3 | Matte Tin (Sn) | 80V | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 83W | 1 | Other Transistors | Not Qualified | 150°C | R-PDSO-C5 | 45 ns | 220ns | 110 ns | 95 ns | -28A | 20V | SILICON | DRAIN | SWITCHING | -10V | 5.2W Ta 83.3W Tc | -80V | P-Channel | 4700pF @ 40V | 25m Ω @ 10.2A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SUD50P08-25L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0825le3-datasheets-1721.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 25.2mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 8.3W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 45 ns | 25ns | 100 ns | 95 ns | -12.5A | 20V | SILICON | DRAIN | SWITCHING | 80V | -3V | 8.3W Ta 136W Tc | 50A | 40A | -80V | P-Channel | 4700pF @ 40V | 25.2m Ω @ 12.5A, 10V | 3V @ 250μA | 50A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI7489DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7489dpt1ge3-datasheets-1663.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 41mOhm | 8 | yes | EAR99 | S17-0173-Single | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 5.2W | 1 | Not Qualified | 150°C | R-PDSO-F5 | 15 ns | 160ns | 100 ns | 110 ns | -28A | 20V | SILICON | DRAIN | SWITCHING | 100V | -3V | 5.2W Ta 83W Tc | 40A | -100V | P-Channel | 4600pF @ 50V | 55ns | 41m Ω @ 7.8A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7469DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7469dpt1ge3-datasheets-1434.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 25MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 83W | 1 | Other Transistors | 150°C | R-PDSO-C5 | 15 ns | 25ns | 100 ns | 105 ns | -28A | 20V | SILICON | DRAIN | 80V | -3V | 5.2W Ta 83.3W Tc | 40A | -80V | P-Channel | 4700pF @ 40V | -3 V | 25m Ω @ 10.2A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| CSD19502Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd19502q5b-datasheets-1484.pdf | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 950μm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD19502 | 1 | Single | NOT SPECIFIED | 3.2W | 1 | FET General Purpose Power | 8 ns | 6ns | 7 ns | 22 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 2.7V | 3.1W Ta 195W Tc | 400A | 22 pF | 274 mJ | 80V | N-Channel | 4870pF @ 40V | 4.1m Ω @ 19A, 10V | 3.3V @ 250μA | 100A Ta | 62nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC030P03NS3GAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-bsc030p03ns3gauma1-datasheets-0965.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 1 | 2.5W | 1 | 150°C | R-PDSO-F5 | 27 ns | 105ns | 33 ns | 98 ns | -25.4A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.5W Ta 125W Tc | 200A | 0.0046Ohm | 345 mJ | -30V | P-Channel | 14000pF @ 15V | 3m Ω @ 50A, 10V | 3.1V @ 345μA | 25.4A Ta 100A Tc | 186nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| FDMS86263P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms86263p-datasheets-1179.pdf | 8-PowerTDFN | 5mm | 1.1mm | 5.85mm | 5 | 16 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | not_compliant | e3 | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 104W | 1 | Other Transistors | 150°C | R-PDSO-F5 | 17 ns | 10ns | 14 ns | 37 ns | -4.4A | 25V | SILICON | DRAIN | SWITCHING | 150V | -2.9V | 2.5W Ta 104W Tc | MO-240AA | 22A | 70A | 0.053Ohm | -150V | P-Channel | 3905pF @ 75V | 53m Ω @ 4.4A, 10V | 4V @ 250μA | 4.4A Ta 22A Tc | 63nC @ 10V | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| SQD40P10-40L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40p1040lge3-datasheets-1274.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 12 Weeks | 1 | 136W | 175°C | TO-252AA | 11 ns | 78 ns | -38A | 20V | 100V | 136W Tc | 33mOhm | -100V | P-Channel | 5540pF @ 15V | 40mOhm @ 8.2A, 10V | 2.5V @ 250μA | 38A Tc | 144nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH5200FNH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 2.2nF | 26A | 250V | 78W Tc | N-Channel | 2200pF @ 100V | 52mOhm @ 13A, 10V | 4V @ 1mA | 26A Tc | 22nC @ 10V | 52 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18532Q5B |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 950μm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD18532 | 1 | Single | NOT SPECIFIED | 3.2W | 1 | FET General Purpose Powers | 150°C | 5.8 ns | 7.2ns | 3.1 ns | 22 ns | 23A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 3.2W Ta 156W Tc | 400A | 0.0043Ohm | 320 mJ | 60V | N-Channel | 5070pF @ 30V | 3.2m Ω @ 25A, 10V | 2.2V @ 250μA | 100A Ta | 58nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF9540NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf9540npbf-datasheets-1299.pdf | -100V | -23A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 117mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | 250 | Single | 30 | 140W | 1 | Other Transistors | 15 ns | 67ns | 51 ns | 51 ns | -23A | 20V | -100V | SILICON | DRAIN | SWITCHING | 100V | -4V | 140W Tc | TO-220AB | 220 ns | 76A | -100V | P-Channel | 1300pF @ 25V | -4 V | 117m Ω @ 11A, 10V | 4V @ 250μA | 23A Tc | 97nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CSD17570Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Gold | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD17570 | 1 | Single | NOT SPECIFIED | 1 | 5 ns | 36ns | 44 ns | 144 ns | 100A | 20V | SILICON | DRAIN | 3.2W Ta | 53A | 360A | 0.00092Ohm | 450 mJ | 30V | N-Channel | 13600pF @ 15V | 0.69m Ω @ 50A, 10V | 1.9V @ 250μA | 100A Ta | 121nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STB13N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb13n60m2-datasheets-1409.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 26 Weeks | 380mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | GULL WING | STB13N | Single | 110W | 1 | R-PSSO-G2 | 11 ns | 10ns | 9.5 ns | 41 ns | 11A | 25V | SILICON | DRAIN | SWITCHING | 600V | 110W Tc | 44A | 125 mJ | 650V | N-Channel | 580pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18540Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5 | 6 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD18540 | NOT SPECIFIED | 1 | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.1W Ta 195W Tc | 28A | 400A | 0.0033Ohm | 20 pF | 320 mJ | N-Channel | 4230pF @ 30V | 2.2m Ω @ 28A, 10V | 2.3V @ 250μA | 100A Ta | 53nC @ 10V | 4.5V 10V | ±20V |
