Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Max Operating Temperature Min Operating Temperature Technology Operating Mode RoHS Status Published Datasheet Voltage - Rated DC Current Rating Package / Case Lead Free Number of Terminations Number of Pins Pbfree Code ECCN Code Radiation Hardening Reach Compliance Code HTS Code JESD-609 Code Terminal Finish Surface Mount Terminal Position Terminal Form Peak Reflow Temperature (Cel) Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory Qualification Status JESD-30 Code Supplier Device Package Input Capacitance Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Transistor Element Material Configuration Case Connection Transistor Application Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min Power Dissipation-Max JEDEC-95 Code Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Drain-source On Resistance-Max Drain to Source Resistance Avalanche Energy Rating (Eas) Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs Rds On Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
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0 0x0x0 download QFET® Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) 2000 https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb9n50tm-datasheets-5124.pdf TO-262-3 Long Leads, I2Pak, TO-262AA I2PAK (TO-262) 500V 3.13W Ta 147W Tc N-Channel 1450pF @ 25V 730mOhm @ 4.5A, 10V 5V @ 250μA 9A Tc 36nC @ 10V 10V ±30V

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