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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| ISP13DP06NMSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-261-3 | 60V | P-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISP26DP06NMSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-261-3 | 60V | P-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD06P003NSAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 60V | 83W Tc | P-Channel | 1600pF @ 30V | 65m Ω @ 22A, 10V | 4V @ 1.04mA | 22A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM480P06CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -50°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm480p06cic0g-datasheets-5488.pdf | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 60V | 27W Tc | P-Channel | 1250pF @ 30V | 48mOhm @ 8A, 10V | 2.2V @ 250μA | 20A Tc | 22.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISP06P008NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-261-3 | P-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUXDILZ24NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISP06P005NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-261-3 | P-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD6416ANLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-nvd6416anlt4g-datasheets-5494.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 Weeks | 74MOhm | 4 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 16ns | 40 ns | 35 ns | 19A | 20V | SILICON | DRAIN | 71W Tc | 70A | 50 mJ | 100V | N-Channel | 1nF @ 25V | 74m Ω @ 19A, 10V | 2.2V @ 250μA | 19A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| CP373-CMPDM303NH-CT | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cp373cmpdm303nhct-datasheets-5526.pdf | Die | 30V | N-Channel | 590pF @ 10V | 78m Ω @ 1.8A, 2.5V | 1.2V @ 250μA | 3.6A Ta | 13nC @ 4.5V | 2.5V 4.5V | 12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CTLDM7002A-M621 BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctldm7002am621tr-datasheets-5322.pdf | 6-PowerVFDFN | compliant | YES | FET General Purpose Power | Single | 60V | 900mW Ta | 0.28A | N-Channel | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 280mA Ta | 0.592nC @ 4.5V | 5V 10V | 40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM340N06CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm340n06cic0g-datasheets-5528.pdf | TO-220-3 Full Pack, Isolated Tab | 260 | 30 | 60V | 27W Tc | N-Channel | 1180pF @ 30V | 34m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 16.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD25DP06LMSAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 60V | 28W Tc | P-Channel | 420pF @ 30V | 250m Ω @ 6.5A, 10V | 2V @ 270μA | 6.5A Tc | 13.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM22P10CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm22p10cic0g-datasheets-5505.pdf | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 100V | 48W Tc | P-Channel | 2250pF @ 30V | 140mOhm @ 20A, 10V | 3V @ 250μA | 22A Tc | 42nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM480P06CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -50°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm480p06cic0g-datasheets-5488.pdf | TO-220-3 | TO-220 | 60V | 66W Tc | P-Channel | 1250pF @ 30V | 48mOhm @ 8A, 10V | 2.2V @ 250μA | 20A Tc | 22.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM230N06CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm230n06czc0g-datasheets-5511.pdf | TO-220-3 | TO-220 | 60V | 104W Tc | N-Channel | 1680pF @ 25V | 23mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCMP06-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-VDFN Exposed Pad | compliant | 260 | 10 | P-Channel | 110m Ω @ 2.8A, 4.5V | 1V @ 250μA | 2A Ta | Schottky Diode (Isolated) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD390P06NMSAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 60V | P-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM10N60CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm10n60cic0g-datasheets-5480.pdf | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 600V | 50W Tc | N-Channel | 1738pF @ 25V | 750mOhm @ 5A, 10V | 4V @ 250μA | 10A Tc | 45.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS355AN-F169 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Vendor Undefined | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds355annb9l007a-datasheets-5460.pdf | TO-236-3, SC-59, SOT-23-3 | LAST SHIPMENTS (Last Updated: 1 month ago) | yes | 30V | 500mW Ta | N-Channel | 195pF @ 15V | 85m Ω @ 1.9A, 10V | 2V @ 250μA | 1.7A Ta | 5nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN62D0LFD-13 | Diodes Incorporated | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 260 | 30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2400UFB4-7R | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQA0011DNS#G0 | Renesas Electronics America | $5.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 3-DFN Exposed Pad | 16V | 15W Tc | N-Channel | 750mV @ 1mA | 3.8A Ta | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQK0609CQDQS#H1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rqk0609cqdqsh1-datasheets-5485.pdf | TO-243AA | 4 | yes | No | 4 | FET General Purpose Power | 14 ns | 56ns | 5 ns | 38 ns | 4A | 12V | Single | 60V | 1.5W Ta | 4A | N-Channel | 470pF @ 10V | 100m Ω @ 2A, 4.5V | 1.4V @ 1mA | 4A Ta | 5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| DMG3415U-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 3 | yes | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | GULL WING | 260 | 150°C | 40 | 1 | Other Transistors | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 0.9W | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.0425Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
| TSM10N60CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm10n60cic0g-datasheets-5480.pdf | TO-220-3 | NOT SPECIFIED | NOT SPECIFIED | 600V | 166W Tc | N-Channel | 1738pF @ 25V | 750m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 45.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD3055-150T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nvd3055150t4g-datasheets-5447.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 20 Weeks | 3.949996g | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | GULL WING | 3 | 1 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 11.2 ns | 37.1ns | 23 ns | 12.2 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 28.8W Ta | 9A | 27A | 60V | N-Channel | 280pF @ 25V | 150m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Ta | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| 2N7002E-7-G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 2013 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMS3014SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 5 | yes | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | NO LEAD | 260 | 150°C | 40 | 1 | FET General Purpose Power | R-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 2.1W | 30V | METAL-OXIDE SEMICONDUCTOR | 9A | 0.014Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| RJK4532DPD-E0#J2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 450V | 40.3W Tc | N-Channel | 280pF @ 25V | 2.3 Ω @ 2A, 10V | 4.5V @ 1mA | 4A Ta | 9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA1912TE(0)-T1-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa1912te0t1at-datasheets-5458.pdf | SC-95 | yes | compliant | NOT SPECIFIED | 6 | NOT SPECIFIED | 12V | 200mW Ta | P-Channel | 810pF @ 10V | 50m Ω @ 2.5A, 4.5V | 1.5V @ 1mA | 4.5A Ta | 5.6nC @ 4V | 2.5V 4.5V | ±10V |
