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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STF12NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb12nm60n-datasheets-3049.pdf | TO-220-3 Full Pack | Lead Free | 3 | No SVHC | 410mOhm | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STF12 | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 9ns | 10 ns | 60 ns | 10A | 25V | 600V | SILICON | ISOLATED | SWITCHING | 3V | 25W Tc | TO-220AB | 40A | 200 mJ | 600V | N-Channel | 960pF @ 50V | 3 V | 410m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 30.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||
| STF15NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw15nm60n-datasheets-5445.pdf | TO-220-3 Full Pack | Lead Free | 3 | 270mOhm | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STF15 | 3 | Single | NOT SPECIFIED | 30W | 1 | FET General Purpose Power | Not Qualified | 14ns | 30 ns | 80 ns | 14A | 25V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 56A | 600V | N-Channel | 1250pF @ 50V | 299m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 37nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||
| STP40NS15 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Through Hole | Through Hole | 175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp40ns15-datasheets-8947.pdf | TO-220-3 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STP40N | 3 | Single | NOT SPECIFIED | 140W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 45ns | 35 ns | 85 ns | 40A | 20V | SILICON | SWITCHING | 140W Tc | TO-220AB | 160A | 0.052Ohm | 500 mJ | 150V | N-Channel | 2400pF @ 25V | 52m Ω @ 40A, 10V | 4V @ 250μA | 40A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| STF13NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13nm50n-datasheets-8948.pdf | TO-220-3 Full Pack | 3 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STF13 | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 15ns | 10 ns | 40 ns | 6A | 25V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 12A | 48A | 200 mJ | 500V | N-Channel | 960pF @ 50V | 320m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||
| STP10NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10nm65n-datasheets-2172.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 480mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | STP10 | 3 | Single | 90W | 1 | FET General Purpose Power | 12 ns | 8ns | 20 ns | 50 ns | 4.5A | 25V | SILICON | SWITCHING | 3V | 90W Tc | TO-220AB | 9A | 650V | N-Channel | 850pF @ 50V | 3 V | 480m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 25nC @ 10V | 10V | ±25V | |||||||||||||||||||||||
| STP13NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13nm50n-datasheets-8948.pdf | TO-220-3 | Lead Free | 3 | 320mOhm | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STP13N | 3 | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 15ns | 10 ns | 40 ns | 12A | 25V | SILICON | SWITCHING | 100W Tc | TO-220AB | 48A | 200 mJ | 500V | N-Channel | 960pF @ 50V | 320m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||
| STF16NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf16nm50n-datasheets-8933.pdf | TO-220-3 Full Pack | Lead Free | 3 | 260mOhm | 3 | e3 | MATTE TIN | NOT SPECIFIED | STF16 | 3 | Single | NOT SPECIFIED | 30W | 1 | FET General Purpose Power | Not Qualified | 15ns | 16 ns | 60 ns | 15A | 25V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 60A | 470 mJ | 500V | N-Channel | 1200pF @ 50V | 260m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 38nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||
| STI16NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf16nm50n-datasheets-8933.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | not_compliant | e3 | MATTE TIN | 245 | STI16N | 3 | Single | 40 | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 15ns | 16 ns | 60 ns | 15A | 25V | SILICON | SWITCHING | 125W Tc | 60A | 0.26Ohm | 470 mJ | 500V | N-Channel | 1200pF @ 50V | 260m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 38nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||
| STP12NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb12nm60n-datasheets-3049.pdf | TO-220-3 | Lead Free | 3 | 410mOhm | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STP12 | 3 | Single | NOT SPECIFIED | 90W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 9ns | 10 ns | 60 ns | 10A | 25V | SILICON | SWITCHING | 90W Tc | TO-220AB | 40A | 200 mJ | 600V | N-Channel | 960pF @ 50V | 410m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 30.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||
| STF10NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF10N | 3 | Single | 25W | 1 | FET General Purpose Power | 12 ns | 8ns | 20 ns | 50 ns | 4.5A | 25V | 650V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 9A | 0.48Ohm | 650V | N-Channel | 850pF @ 50V | 3 V | 480m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 25nC @ 10V | 10V | ±25V | |||||||||||||||||||||||
| STF9NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf9nm50n-datasheets-8937.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | 3 | 3 | No | STF9 | 3 | Single | 25W | 1 | FET General Purpose Power | 11 ns | 16ns | 19 ns | 45 ns | 7.5A | 25V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 0.56Ohm | 500V | N-Channel | 570pF @ 50V | 560m Ω @ 3.7A, 10V | 4V @ 250μA | 5A Tc | 20nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| STFV3N150 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfv3n150-datasheets-8939.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STFV3 | 3 | Single | 30W | 1 | FET General Purpose Power | 24 ns | 47ns | 61 ns | 45 ns | 2.5A | 30V | SILICON | SWITCHING | 1500V | 30W Tc | TO-220AB | 10A | 9Ohm | 450 mJ | 1.5kV | N-Channel | 939pF @ 25V | 9 Ω @ 1.3A, 10V | 5V @ 250μA | 2.5A Tc | 29.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| STD8NM60N-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std8nm60n1-datasheets-8916.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | 260 | STD8N | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | Not Qualified | 12ns | 10 ns | 40 ns | 3.5A | 25V | 600V | SILICON | SWITCHING | 70W Tc | 7A | 28A | 0.65Ohm | 200 mJ | 600V | N-Channel | 560pF @ 50V | 3 V | 650m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 19nC @ 10V | 10V | ±25V | |||||||||||||||||||||
| STD90N02L-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std90n02l1-datasheets-8918.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | EAR99 | LOW THRESHOLD | STD90 | 3 | Single | 70W | 1 | FET General Purpose Power | Not Qualified | 110ns | 8 ns | 18 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 70W Tc | 240A | 0.006Ohm | 25V | N-Channel | 2050pF @ 16V | 6m Ω @ 30A, 10V | 1.8V @ 250μA | 60A Tc | 22nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| STW30NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb30nf20-datasheets-4929.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Tin (Sn) | STW30N | 3 | Single | 125W | 1 | FET General Purpose Power | 35 ns | 15.7ns | 8.8 ns | 38 ns | 30A | 20V | SILICON | SWITCHING | 3V | 125W Tc | TO-220AB | 0.075Ohm | 200V | N-Channel | 1597pF @ 25V | 75m Ω @ 15A, 10V | 4V @ 250μA | 30A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| STB11NM60N-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std11nm60n-datasheets-8869.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | yes | No | e3 | Matte Tin (Sn) | STB11N | 3 | Single | 90W | 1 | FET General Purpose Power | 22 ns | 18.5ns | 12 ns | 50 ns | 10A | 25V | SILICON | ISOLATED | SWITCHING | 90W Tc | 40A | 0.45Ohm | 200 mJ | 600V | N-Channel | 850pF @ 50V | 450m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 31nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||
| STV160NF02LAT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stv160nf02lat4-datasheets-8923.pdf | PowerSO-10 Exposed Bottom Pad | 10 | 12 | EAR99 | DUAL | GULL WING | STV160 | 10 | 210W | 1 | Not Qualified | R-PDSO-G10 | 650ns | 200 ns | 105 ns | 160A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 210W Tc | 640A | 0.0037Ohm | 330 mJ | 20V | N-Channel | 5500pF @ 15V | 2.7m Ω @ 80A, 10V | 1V @ 250μA | 160A Tc | 175nC @ 10V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||
| STD90N03L-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std90n03l-datasheets-9365.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | EAR99 | LOW THRESHOLD | unknown | NOT SPECIFIED | STD90 | 3 | Single | NOT SPECIFIED | 95W | 1 | FET General Purpose Power | Not Qualified | 135ns | 33 ns | 24 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 95W Tc | 0.0057Ohm | 30V | N-Channel | 2805pF @ 25V | 5.7m Ω @ 40A, 10V | 1V @ 250μA | 80A Tc | 32nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||
| STS6PF30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts6pf30l-datasheets-8925.pdf | -30V | -6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4mm | Lead Free | 8 | No SVHC | 8 | EAR99 | LOW THRESHOLD | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS6P | 8 | 30 | 2.5W | 1 | Other Transistors | Not Qualified | 62 ns | 140ns | 19 ns | 57 ns | 6A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.6V | 2.5W Tc | 6A | 24A | 0.042Ohm | -30V | P-Channel | 1670pF @ 25V | 30m Ω @ 3A, 10V | 2.5V @ 250μA | 6A Tc | 28nC @ 5V | 5V 10V | ±16V | ||||||||||||||||
| STB12NM60N-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb12nm60n-datasheets-3049.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | not_compliant | e3 | MATTE TIN | 245 | STB12N | 3 | Single | 40 | 90W | 1 | FET General Purpose Power | Not Qualified | 9ns | 10 ns | 60 ns | 10A | 25V | SILICON | SWITCHING | 90W Tc | 40A | 0.41Ohm | 200 mJ | 600V | N-Channel | 960pF @ 50V | 410m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 30.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||
| STB100NF03L-03-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb100nf03l031-datasheets-2150.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STB100N | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 315ns | 95 ns | 115 ns | 100A | 16V | SILICON | DRAIN | SWITCHING | 300W Tc | 400A | 0.0045Ohm | 30V | N-Channel | 6200pF @ 25V | 3.2m Ω @ 50A, 10V | 2.5V @ 250μA | 100A Tc | 88nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||
| STP13NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp13nk50z-datasheets-8931.pdf | TO-220-3 | 3 | No SVHC | 3 | NOT SPECIFIED | STP13N | 3 | Single | NOT SPECIFIED | 140W | 1 | FET General Purpose Power | Not Qualified | 23ns | 24 ns | 61 ns | 11A | 30V | 500V | SILICON | SWITCHING | 3.75V | 140W Tc | TO-220AB | 44A | 0.48Ohm | 240 mJ | 500V | N-Channel | 1600pF @ 25V | 3.75 V | 480m Ω @ 6.5A, 10V | 4.5V @ 100μA | 11A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| STD65NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp65nf06-datasheets-2391.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | e3 | MATTE TIN | GULL WING | 260 | STD65N | 3 | Single | 30 | 110W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15 ns | 60ns | 16 ns | 40 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 240A | 0.014Ohm | 60V | N-Channel | 1700pF @ 25V | 14m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| STP6NC60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ II | Through Hole | Through Hole | 150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp6nc60-datasheets-8910.pdf | TO-220-3 | 3 | 3 | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | SINGLE | STP6N | 3 | 1 | FET General Purpose Power | 16 ns | 14ns | 16 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 125W Tc | TO-220AB | 6A | 24A | N-Channel | 1020pF @ 25V | 1.2 Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 45.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| STD70N03L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std70n03l1-datasheets-8896.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | LOW THRESHOLD | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | STD70N | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 95ns | 15 ns | 19 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 70W Tc | 280A | 30V | N-Channel | 2200pF @ 25V | 7.3m Ω @ 35A, 10V | 1V @ 250μA | 70A Tc | 21nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||
| STW29NK50ZD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw29nk50zd-datasheets-8892.pdf | 500V | 29A | TO-247-3 | Lead Free | 3 | EAR99 | No | e3 | Matte Tin (Sn) | STW29N | 3 | Single | 350W | 1 | FET General Purpose Power | R-PSFM-T3 | 45 ns | 43ns | 25 ns | 133 ns | 29A | 30V | SILICON | SWITCHING | 350W Tc | TO-247AC | 116A | 0.13Ohm | 500 mJ | 500V | N-Channel | 6450pF @ 25V | 130m Ω @ 14.5A, 10V | 4.5V @ 150μA | 29A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| STD70N02L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std70n02l-datasheets-8887.pdf | 24V | 60A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8mOhm | 3 | EAR99 | LOW THRESHOLD | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | STD70N | 3 | Single | 30 | 60W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130ns | 16 ns | 27 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 25V | 60W Tc | TO-252AA | 240A | 280 mJ | 24V | N-Channel | 1400pF @ 16V | 8m Ω @ 30A, 10V | 1.8V @ 250μA | 60A Tc | 32nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||
| STD5NK52ZD-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb5nk52zd1-datasheets-4264.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 1.22Ohm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - annealed | 260 | 3 | Single | NOT SPECIFIED | 70W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 13.6ns | 15 ns | 23.1 ns | 4.4A | 30V | SILICON | SWITCHING | 70W Tc | 17.6A | 170 mJ | 520V | N-Channel | 529pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 16.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| STF11NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std11nm60n-datasheets-8869.pdf | 600V | 10A | TO-220-3 Full Pack | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | NOT SPECIFIED | STF11 | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 18.5ns | 12 ns | 50 ns | 10A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 25W Tc | TO-220AB | 40A | 0.45Ohm | 200 mJ | 600V | N-Channel | 850pF @ 50V | 450m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 31nC @ 10V | 10V | ±25V | ||||||||||||||||||||
| STD70N03L-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std70n03l1-datasheets-8896.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 5.9mOhm | EAR99 | LOW THRESHOLD | e3 | TIN | NOT SPECIFIED | STD70N | 3 | Single | NOT SPECIFIED | 70W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 95ns | 15 ns | 19 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 70W Tc | 280A | 300 mJ | 30V | N-Channel | 2200pF @ 25V | 7.3m Ω @ 35A, 10V | 1V @ 250μA | 70A Tc | 21nC @ 5V | 5V 10V | ±20V |
