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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMN3010LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmn3010lss13-datasheets-5862.pdf | 8-SOIC (0.154, 3.90mm Width) | 5.3mm | 1.5mm | 4.1mm | 8 | 16 Weeks | 850.995985mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 2.5W | 1 | FET General Purpose Powers | 5.6 ns | 8ns | 27 ns | 45 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 64A | 0.009Ohm | 30V | N-Channel | 2096pF @ 15V | 9m Ω @ 16A, 10V | 2V @ 250μA | 16A Ta | 43.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| AOI2610E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 18 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT35M7LFV-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt35m7lfv7-datasheets-5836.pdf | 8-PowerVDFN | 22 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.98W Ta | N-Channel | 1667pF @ 15V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 76A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN2106ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zvn2106a-datasheets-7903.pdf | 60V | 450mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 2Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | FET General Purpose Powers | 450mA | 20V | SILICON | SWITCHING | 700mW Ta | 0.45A | 60V | N-Channel | 75pF @ 18V | 2 Ω @ 1A, 10V | 2.4V @ 1mA | 450mA Ta | 10V | ±20V | |||||||||||||||||||||||||||
| DMPH4029LFGQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph4029lfgq13-datasheets-5884.pdf | 8-PowerVDFN | 23 Weeks | not_compliant | e3 | Matte Tin (Sn) | 40V | 1.2W Ta | P-Channel | 1626pF @ 20V | 29m Ω @ 3A, 10V | 3V @ 250μA | 8A Ta 22A Tc | 34nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN0124A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn0124a-datasheets-5885.pdf | 240V | 160mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | FET General Purpose Power | 7 ns | 8ns | 8 ns | 16 ns | 160mA | 20V | SILICON | 700mW Ta | 7 pF | 240V | N-Channel | 85pF @ 25V | 16 Ω @ 250mA, 10V | 3V @ 1mA | 160mA Ta | 10V | ±20V | |||||||||||||||||||||||||
| AOD5N50 | Alpha & Omega Semiconductor Inc. | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | No | 104W | 1 | 5A | 30V | 500V | 104W Tc | N-Channel | 670pF @ 25V | 1.6 Ω @ 2.5A, 10V | 4.5V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS23D9N06HLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | RoHS Compliant | 16 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH69M8LFVW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth69m8lfvw7-datasheets-5832.pdf | 8-PowerVDFN | 22 Weeks | 60V | 3.6W Ta 29.4W Tc | N-Channel | 1925pF @ 30V | 9.5m Ω @ 13.5A, 10V | 3V @ 250μA | 15.9A Ta 45.4A Tc | 33.5nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT3009LFVWQ-7 | Diodes Incorporated | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount, Wettable Flank | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt3009lfvwq7-datasheets-5796.pdf | 8-PowerVDFN | 22 Weeks | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.3W Ta 35.7W Tc | N-Channel | 823pF @ 15V | 11m Ω @ 14.4A, 10V | 3V @ 250μA | 12A Ta 50A Tc | 12nC @ 10V | 3.8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD135N03LGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd135n03lgbtma1-datasheets-5833.pdf | 3 | 3 ns | 2.2 ns | 12 ns | 30A | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4264E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | yes | 60V | 3.1W Ta | N-Channel | 1100pF @ 30V | 9.8m Ω @ 13.5A, 10V | 2.4V @ 250μA | 13.5A Ta | 13nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT35M7LFV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt35m7lfv7-datasheets-5836.pdf | 8-PowerVDFN | 22 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.98W Ta | N-Channel | 1667pF @ 15V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 76A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS015P03P8ZTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs015p03p8ztag-datasheets-3301.pdf | 8-PowerWDFN | 18 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.66W Ta 33.8W Tc | P-Channel | 2706pF @ 15V | 9.3m Ω @ 12A, 10V | 3V @ 250μA | 13.4A Ta 47.6A Tc | 62.3nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C022NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4c022nt1g-datasheets-3430.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 3.1W Ta 64W Tc | N-Channel | 3071pF @ 15V | 1.7m Ω @ 30A, 10V | 2.2V @ 250μA | 30A Ta 136A Tc | 45.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR220-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-PAK (TO-252AA) | 200V | 2.5W Ta 42W Tc | N-Channel | 260pF @ 25V | 800mOhm @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6016LFDFW-7 | Diodes Incorporated | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 6-UDFN Exposed Pad | 23 Weeks | 60V | 1.06W Ta | N-Channel | 925pF @ 30V | 18m Ω @ 10A, 10V | 3V @ 250μA | 9.4A Ta | 15.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4936NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4936nt1g-datasheets-9016.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 1 | FET General Purpose Power | 10.4 ns | 19ns | 8 ns | 29 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 920mW Ta 43W Tc | 11.6A | 96.8 mJ | N-Channel | 3044pF @ 15V | 3.8m Ω @ 30A, 10V | 2.2V @ 250μA | 11.6A Ta 79A Tc | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IPC60R2K0C6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS5C460NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs5c460nltag-datasheets-5812.pdf | 8-PowerWDFN | 18 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | N-Channel | 4.8m Ω @ 35A, 10V | 2V @ 40μA | 19A Ta 74A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP320SH6433XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-261-4, TO-261AA | 4 | 10 Weeks | AVALANCHE RATED | AEC-Q101 | YES | DUAL | GULL WING | 1 | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 1.8W Ta | 2.9A | 11.6A | 0.12Ohm | 60 mJ | N-Channel | 340pF @ 25V | 120m Ω @ 2.9A, 10V | 4V @ 20μA | 2.9A Tj | 9.3nC @ 7V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| XP151A12A2MR-G | Torex Semiconductor Ltd | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/torexsemiconductorltd-xp151a12a2mr-datasheets-5716.pdf | TO-236-3, SC-59, SOT-23-3 | 10 Weeks | YES | FET General Purpose Power | Single | 20V | 500mW Ta | 1A | N-Channel | 180pF @ 10V | 100m Ω @ 500mA, 4.5V | 1.4V @ 1mA | 1A Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2316DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2316dst1e3-datasheets-5080.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 1.437803g | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Powers | 9 ns | 14 ns | 3.4A | 20V | SILICON | SWITCHING | 30V | 700mW Ta | 2.9A | 0.05Ohm | N-Channel | 215pF @ 15V | 50m Ω @ 3.4A, 10V | 800mV @ 250μA (Min) | 2.9A Ta | 7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| DMP6110SVTQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmp6110svtq13-datasheets-4825.pdf | SOT-23-6 Thin, TSOT-23-6 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 1.8W Ta | P-Channel | 969pF @ 30V | 105m Ω @ 4.5A, 10V | 3V @ 250μA | 7.3A Ta | 17.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6016LFDFWQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 6-UDFN Exposed Pad | 19 Weeks | e3 | Matte Tin (Sn) | 60V | 1.06W Ta | N-Channel | 925pF @ 30V | 18m Ω @ 10A, 10V | 3V @ 250μA | 9.4A Ta | 15.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM061NA03CR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm061na03crrlg-datasheets-5825.pdf | 8-PowerTDFN | 28 Weeks | 8-PDFN (5x6) | 30V | 78W Tc | N-Channel | 1133pF @ 15V | 6.1mOhm @ 16A, 10V | 2.5V @ 250μA | 88A Tc | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT3006LFV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt3006lfv7-datasheets-5791.pdf | 8-PowerVDFN | 22 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2W Ta | N-Channel | 1155pF @ 15V | 7m Ω @ 9A, 10V | 3V @ 250μA | 60A Tc | 8.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN6017SFV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn6017sfv7-datasheets-5829.pdf | 8-PowerVDFN | 17 Weeks | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 1W Ta | N-Channel | 2711pF @ 15V | 18m Ω @ 6A, 10V | 3V @ 250μA | 35A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK40P04M1(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10mm | 2.3mm | 6.1mm | 2 | 12 Weeks | 3 | No | GULL WING | 1 | Single | 47W | 1 | R-PSSO-G2 | 27 ns | 20ns | 18 ns | 63 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 47W Tc | 40V | N-Channel | 1920pF @ 10V | 11m Ω @ 20A, 10V | 2.3V @ 200μA | 40A Ta | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TP89R103NL,LQ | Toshiba Semiconductor and Storage | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 850.995985mg | 8 | No | DUAL | GULL WING | 1 | 1 | 8.4 ns | 2.3ns | 2.3 ns | 14 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Tc | 52 pF | 30V | N-Channel | 820pF @ 15V | 9.1m Ω @ 7.5A, 10V | 2.3V @ 100μA | 15A Tc | 9.8nC @ 10V | 4.5V 10V | ±20V |
