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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| S10KC V7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 800V | 1μA @ 800V | 1.1V @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH5R06FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth5r06b-datasheets-4263.pdf | 600V | 5A | TO-220-2 Full Pack, Isolated Tab | 10.4mm | 9.3mm | 4.6mm | Lead Free | 2 | 15 Weeks | 2 | ACTIVE (Last Updated: 6 months ago) | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | STTH5R06 | 3 | Single | 1 | Rectifier Diodes | 5A | 5A | 2.9V | 50A | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 20μA | 600V | 50A | 600V | 40 ns | 25 ns | Standard | 600V | 5A | 1 | 20μA @ 600V | 2.9V @ 5A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||
| VS-ETX0806FP-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2010 | /files/vishaysemiconductordiodesdivision-vsetx0806fpm3-datasheets-1905.pdf | TO-220-2 Full Pack | 10.63mm | 9.8mm | 4.83mm | 2 | 14 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | 2 | Single | 1 | Rectifier Diodes | 8A | 3.4V | 80A | ISOLATED | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 20nA | 600V | 80A | 600V | 24 ns | 17 ns | Standard | 600V | 8A | 1 | 8A | 30μA @ 600V | 3.4V @ 8A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| MURF860 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 Full Pack, Isolated Tab | 14 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 5μA @ 600V | 2.2V @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR810G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-mur815g-datasheets-9830.pdf | 100V | 8A | TO-220-2 | 6.35mm | 6.35mm | 25.4mm | Lead Free | 2 | 4 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | NO | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 8A | 8A | 975mV | 100A | CATHODE | ULTRA FAST RECOVERY POWER | 100V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 5μA | 100V | 100A | 100V | 35 ns | 35 ns | Standard | 100V | 8A | 1 | 5μA @ 100V | 975mV @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| D8020LTP |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MURF1560G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | SCHOTTKY | ROHS3 Compliant | 2008 | /files/onsemiconductor-mur1520g-datasheets-7221.pdf | TO-220-2 Full Pack | Lead Free | 2 | 9 Weeks | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | NO | 2 | Single | 1 | Rectifier Diodes | 15A | 1.5V | 150A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 10μA | 600V | 150A | 600V | 60 ns | 60 ns | Standard | 600V | 15A | 1 | 10μA @ 600V | 1.5V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| MBR750 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Through Hole | 150°C | -65°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-mbr760-datasheets-1017.pdf | 50V | 7.5A | TO-220-2 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 20 Weeks | 2.16g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | No | Standard | MBR750 | Single | TO-220-2L | 7.5A | 7.5A | 750mV | 150A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 150A | 500μA | 50V | 150A | Schottky | 50V | 7.5A | 50V | 500μA @ 50V | 750mV @ 7.5A | 7.5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FES8JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | 8A | TO-220-2 | 10.54mm | 15.32mm | 4.7mm | Lead Free | 2 | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8A | 8541.10.00.80 | e3 | Matte Tin (Sn) | 600V | 3 | Single | 1 | Rectifier Diodes | 8A | 1.5V | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125A | 10μA | 600V | 125A | 600V | 50 ns | 50 ns | Standard | 600V | 8A | 1 | 10μA @ 600V | 1.5V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| 1N3595US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, B | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | Single | 1 | 200mA | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4A | 0.001μA | 3 μs | Standard | 4A | 1nA @ 125V | 1V @ 200mA | 4A DC | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR2020RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/onsemiconductor-mur2020rg-datasheets-1872.pdf | 200V | 20A | TO-220-2 | 10.29mm | 15.75mm | 4.82mm | Lead Free | 2 | 2 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOW POWER LOSS | Tin | No | 8541.10.00.80 | e3 | NO | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 20A | 20A | 1.1V | 250A | EFFICIENCY | 200V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250A | 50μA | 200V | 250A | 200V | 95 ns | 95 ns | Standard | 200V | 20A | 1 | 50μA @ 200V | 1.1V @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| ISL9R860P2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stealth™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | /files/onsemiconductor-isl9r860p2-datasheets-1876.pdf | 600V | 8A | TO-220-2 | 30pF | 6.35mm | 6.35mm | 6.35mm | Lead Free | 2 | 4 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE | No | 8A | 8541.10.00.80 | e3 | Tin (Sn) | 600V | ISL9R860 | Single | 85W | 1 | Rectifier Diodes | 8A | 8A | 2.4V | 100A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 100μA | 600V | 100A | 600V | 30 ns | 30 ns | Standard | 600V | 8A | 1 | 100μA @ 600V | 2.4V @ 8A | -55°C~175°C | |||||||||||||||||||||||||||||||
| LXA10T600 | Power Integrations |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Qspeed™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2011 | /files/powerintegrations-lxa10t600-datasheets-1882.pdf | TO-220-2 | 2 | 4 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | 3 | Single | 89W | 1 | 10A | 350A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 350A | 600V | 23 ns | 23 ns | Standard | 600V | 10A | 1 | 250μA @ 600V | 3V @ 10A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| MBR1080G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/onsemiconductor-mbr10100g-datasheets-5663.pdf | 80V | 10A | TO-220-2 | 6.35mm | 6.35mm | 25.4mm | Lead Free | 2 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 5 days ago) | No | Standard | Single | TO-220-2 | 10A | 10A | 800mV | 150A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 150A | 100μA | 80V | 150A | Schottky | 80V | 10A | 80V | 100μA @ 80V | 800mV @ 10A | 10A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| MURF860G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/onsemiconductor-mur815g-datasheets-9830.pdf | TO-220-2 Full Pack | Lead Free | 2 | 5 Weeks | 2 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | NO | 2 | Single | 1 | Rectifier Diodes | 8A | 1.5V | 100A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 10μA | 600V | 100A | 600V | 60 ns | 60 ns | Standard | 600V | 8A | 1 | 8A | 10μA @ 600V | 1.5V @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| MBR1090G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/onsemiconductor-mbr10100g-datasheets-5663.pdf | 90V | 10A | TO-220-2 | 31.75mm | 6.35mm | 6.35mm | Lead Free | 2 | 2 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 11 hours ago) | yes | EAR99 | LOW POWER LOSS | Tin | No | 8541.10.00.80 | e3 | Standard | NO | 260 | MBR1090 | 2 | Single | 40 | 1 | Rectifier Diodes | 10A | 10A | 800mV | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 100μA | 90V | 150A | Schottky | 90V | 10A | 1 | 100μA @ 90V | 800mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| 1N4003-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/microcommercialco-1n4007tp-datasheets-7443.pdf | DO-204AL, DO-41, Axial | 2 | 12 Weeks | yes | EAR99 | METALLURGICALLY BONDED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 1N4003 | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 2μs | Standard | 30A | 1A | 15pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| STTH6004W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth6004w-datasheets-1836.pdf | 400V | 60A | DO-247-2 (Straight Leads) | 15.75mm | 20.15mm | 5.15mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 8 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) | STTH6004 | 2 | Single | 1 | Rectifier Diodes | 60A | 60A | 830mV | 600A | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 50μA | 400V | 600A | 400V | 90 ns | 90 ns | Standard | 400V | 60A | 1 | 50μA @ 400V | 1.2V @ 60A | 175°C Max | |||||||||||||||||||||||||||||||||||||||
| BYV29-400,127 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | /files/weensemiconductors-byv29400127-datasheets-8762.pdf | TO-220-2 | 2 | e3 | TIN | IEC-60134 | NO | SINGLE | NOT SPECIFIED | BYV29-400 | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 9A | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 50μA | TO-220AC | 60ns | Standard | 1 | 400V | 50μA @ 400V | 1.25V @ 8A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPL-H2VL | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-sjplh2vl-datasheets-1847.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | Standard | 200V | 2A | 200V | 50μA @ 200V | 980mV @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISL9R460PF2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stealth™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2003 | /files/onsemiconductor-isl9r460pf2-datasheets-8764.pdf | 600V | 4A | TO-220-2 Full Pack | 19pF | 10.36mm | 16.07mm | 4.9mm | Lead Free | 2 | 4 Weeks | 2.565g | 2 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | Single | 58W | 1 | Rectifier Diodes | 4A | 4A | 2.4V | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 100μA | 600V | 50A | 600V | 22 ns | 22 ns | Standard | 600V | 4A | 1 | 100μA @ 600V | 2.4V @ 4A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| VS-40HF160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 40A | 1.3V | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 4.5mA | 1.6kV | 595A | 1.6kV | Standard | 1.6kV | 40A | 1 | 1600V | 4.5mA @ 1600V | 1.5V @ 125A | -65°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||
| SFF1004G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sff1006gc0g-datasheets-9885.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 70pF @ 4V 1MHz | 200V | 10μA @ 200V | 975mV @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S300Y | GeneSiC Semiconductor | $64.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -60°C | RoHS Compliant | 2011 | DO-205AB, DO-9, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | Single | 1 | Rectifier Diodes | O-MUPM-H1 | 300A | 1.2V | 6.85kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 6.85kA | 10μA | 1.6kV | 400V | Standard | 1.6kV | 300A | 1 | 1600V | 10μA @ 1600V | 1.2V @ 300A | -60°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| FERD20H100STS | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-ferd20h100sfp-datasheets-9821.pdf | TO-220-3 | 3 | 15 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | NOT SPECIFIED | FERD20 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 140μA | TO-220AB | FERD (Field Effect Rectifier Diode) | 100V | 20A | 250A | 1 | 100V | 140μA @ 100V | 705mV @ 20A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV29-500,127 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | /files/weensemiconductors-byv29500127-datasheets-8734.pdf | TO-220-2 | 2 | e3 | TIN | IEC-134 | NO | SINGLE | NOT SPECIFIED | BYV29-500 | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 9A | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50μA | TO-220AC | 60ns | Standard | 1 | 500V | 50μA @ 500V | 1.25V @ 8A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETH3006FP-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vseth3006fpm3-datasheets-1803.pdf | TO-220-2 Full Pack | 10.36mm | 16.07mm | 4.93mm | 2 | 14 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | ETH3006 | 2 | Single | 1 | Rectifier Diodes | 30A | 2.65V | 180A | ISOLATED | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 180A | 20nA | 600V | 180A | 600V | 35 ns | 26 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2.65V @ 30A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| SF1006G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf1006gc0g-datasheets-1806.pdf | TO-220-3 | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 150°C | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 10μA | TO-220AB | 35ns | Standard | 125A | 1 | 5A | 50pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR805G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/onsemiconductor-mur815g-datasheets-9830.pdf | 50V | 8A | TO-220-2 | Lead Free | 2 | 2 Weeks | 2 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | NO | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 8A | 8A | 975mV | 100A | CATHODE | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 5μA | 50V | 100A | 50V | 35 ns | 35 ns | Standard | 50V | 8A | 1 | 5μA @ 50V | 975mV @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| S8JC R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 2 | 17 Weeks | EAR99 | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | Standard | 170A | 1 | 8A | 48pF @ 4V 1MHz | 600V | 10μA @ 600V | 985mV @ 8A | 8A | -55°C~150°C |
