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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| AIDW40S65C5XKSA1 | Infineon Technologies | $14.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100/101, CoolSiC™ | Through Hole | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-aidw40s65c5xksa1-datasheets-1609.pdf | TO-247-3 | 39 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1138pF @ 1V 1MHz | 650V | 120μA @ 650V | 1.7V @ 40A | 40A DC | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSH20120A-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Not Applicable | /files/onsemiconductor-ffsh20120af085-datasheets-1613.pdf | TO-247-2 | 10 Weeks | yes | not_compliant | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1220pF @ 1V 100KHz | 1200V | 200μA @ 1200V | 30A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSH3065B-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Not Applicable | /files/onsemiconductor-ffsh3065bf085-datasheets-1623.pdf | TO-247-2 | 10 Weeks | yes | not_compliant | e3 | Tin (Sn) | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1260pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 30A | 37A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GC15MPS12-220 | GeneSiC Semiconductor | $5.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-220-2 | 14 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1089pF @ 1V 1MHz | 1200V | 14μA @ 1200V | 1.8V @ 15A | 82A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSP3065B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | ROHS3 Compliant | /files/onsemiconductor-ffsp3065b-datasheets-1542.pdf | TO-220-2 | 10 Weeks | yes | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1280pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR70GR02 | GeneSiC Semiconductor | $21.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 1.5V | 870A | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 870A | 25μA | 400V | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 70A | 1 | 25μA @ 100V | 1.4V @ 70A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||
| VS-HFA25PB60-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vshfa25pb60n3-datasheets-1545.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 25A | 2V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 151W | 225A | 20μA | 600V | 225A | 75 ns | Standard | 600V | 25A | 1 | 20μA @ 600V | 1.7V @ 25A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| LSIC2SD120E30CC | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Gen2 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | /files/littelfuseinc-lsic2sd120e30cc-datasheets-1633.pdf | TO-247-3 | 23 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 920pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.8V @ 15A | 44A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AIDW20S65C5XKSA1 | Infineon Technologies | $7.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100/101, CoolSiC™ | Through Hole | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-aidw20s65c5xksa1-datasheets-1552.pdf | TO-247-3 | 39 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 584pF @ 1V 1MHz | 650V | 120μA @ 650V | 1.7V @ 20A | 20A DC | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSH5065A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | AVALANCHE | RoHS Compliant | 2018 | /files/onsemiconductor-ffsh5065a-datasheets-1637.pdf | TO-247-2 | 2 | 10 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | EFFICIENCY | No Recovery Time > 500mA (Io) | 429W | 650V | 200μA | TO-247AB | 0ns | Silicon Carbide Schottky | 1250A | 1 | 60A | 2530pF @ 1V 100kHz | 650V | 200μA @ 650V | 1.75V @ 50A | 60A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| FFSH20120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | Not Applicable | AVALANCHE | RoHS Compliant | 2016 | /files/onsemiconductor-ffsh20120a-datasheets-1556.pdf | TO-247-2 | 2 | 10 Weeks | 6.33g | ACTIVE (Last Updated: 3 days ago) | yes | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | 175°C | -55°C | Single | 1 | R-PSFM-T2 | EFFICIENCY | No Recovery Time > 500mA (Io) | 273W | 1200V | 135A | 1.2kV | 200μA | TO-247AB | 0ns | Silicon Carbide Schottky | 1 | 30A | 1220pF @ 1V 100KHz | 1200V | 200μA @ 1200V | 1.75V @ 20A | 30A DC | ||||||||||||||||||||||||||||||||||||||||||||
| GC15MPS12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-247-2 | 14 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1089pF @ 1V 1MHz | 1200V | 14μA @ 1200V | 1.8V @ 15A | 75A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSPF2065A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | AVALANCHE | RoHS Compliant | /files/onsemiconductor-ffspf2065a-datasheets-1498.pdf | TO-220-2 Full Pack | 2 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | HIGH RELIABILITY, PD-CASE | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | ISOLATED | EFFICIENCY | No Recovery Time > 500mA (Io) | 49W | 650V | 200μA | TO-220AC | 1.75V | 0ns | Silicon Carbide Schottky | 1000A | 1 | 20A | 1085pF @ 1V 100kHz | 650V | 200μA @ 650V | 20A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-45EPS12LHM3 | Vishay Semiconductor Diodes Division | $3.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs45aps12lhm3-datasheets-1366.pdf | TO-247-2 | 12 Weeks | TO-247AD | Standard Recovery >500ns, > 200mA (Io) | Standard | 1200V | 100μA @ 1200V | 1.14V @ 45A | 45A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSIC2SD065E20CCA | Littelfuse Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, GEN2 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/littelfuseinc-lsic2sd065e20cca-datasheets-1505.pdf | TO-247-3 | 23 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 470pF @ 1V 1MHz | 650V | 50μA @ 650V | 1.8V @ 10A | 27A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSIC2SD120E15CC | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Gen2 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | /files/littelfuseinc-lsic2sd120e15cc-datasheets-1510.pdf | TO-247-3 | 23 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 454pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.8V @ 8A | 24.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSH1665A |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA06TB120S-M3 | Vishay Semiconductor Diodes Division | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa06tb120sm3-datasheets-1519.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | Standard | 1200V | 5μA @ 1200V | 3.9V @ 12A | 6A DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSH3065A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | AVALANCHE | RoHS Compliant | /files/onsemiconductor-ffsh3065a-datasheets-1523.pdf | TO-247-2 | 2 | 10 Weeks | 2 | ACTIVE (Last Updated: 2 days ago) | yes | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | SINGLE | EFFICIENCY | No Recovery Time > 500mA (Io) | 650V | 1.75V | 0ns | Silicon Carbide Schottky | 1040A | 1 | 30A | 1705pF @ 1V 100kHz | 650V | 200μA @ 650V | 26A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| FFSP2065BDN-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Not Applicable | Non-RoHS Compliant | /files/onsemiconductor-ffsp2065bdnf085-datasheets-1529.pdf | TO-220-3 | 10 Weeks | yes | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 421pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSC030SDA070S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-msc030sda070s-datasheets-1531.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 15 Weeks | D3Pak | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 700V | 1.8V @ 30A | 30A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPS12-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60eps12m3-datasheets-1459.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 12 Weeks | 2 | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 60A | 1.09V | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.1kA | 100μA | 1.2kV | 1kA | Standard | 1.2kV | 60A | 1 | 1200V | 100μA @ 1200V | 1.09V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| CDBJFSC101200-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbjfsc101200g-datasheets-1533.pdf | TO-220-2 Full Pack | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 780pF @ 0V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 10A | 10A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSB20120A-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/onsemiconductor-ffsb20120af085-datasheets-1463.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | yes | PD-CASE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 333W | 1200V | 200μA | 1200V | 0ns | Silicon Carbide Schottky | 135A | 1 | 32A | 1220pF @ 1V 100KHz | 1200V | 200μA @ 1200V | 1.75V @ 20A | 32A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-45EPS16LHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs45eps16lhm3-datasheets-1537.pdf | TO-247-2 | 12 Weeks | TO-247AD | Standard Recovery >500ns, > 200mA (Io) | Standard | 1600V | 100μA @ 1600V | 1.16V @ 45A | 45A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS320AHGC9 | ROHM Semiconductor | $18.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-220-2 | 2 | 12 Weeks | EAR99 | PD-CASE | compliant | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 115W | 650V | 100μA | TO-220AC | 1.5V | 0ns | Silicon Carbide Schottky | 104A | 1 | 20A | 1000pF @ 1V 1MHz | 650V | 100μA @ 650V | 20A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| DSA1-16D | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/ixys-dsa118d-datasheets-5753.pdf | Radial | Lead Free | 2 | 28 Weeks | No SVHC | 1 | yes | EAR99 | Standard | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSIP-T2 | 1.34V | 110A | 700μA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 118A | Avalanche | 1.6kV | 2.3A | 1 | 1600V | 700μA @ 1600V | 1.34V @ 7A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| STPSC806D | STMicroelectronics | $2.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stpsc606d-datasheets-1076.pdf | TO-220-2 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 2 | 14 Weeks | No SVHC | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | STPSC806 | 3 | Single | 1 | Rectifier Diodes | 8A | 1.7V | 30A | 100μA | POWER | No Recovery Time > 500mA (Io) | 100nA | 600V | 120A | 0ns | Silicon Carbide Schottky | 600V | 8A | 1 | 8A | 450pF @ 0V 1MHz | 100μA @ 600V | 1.7V @ 8A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||
| FFSH5065B-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Not Applicable | Non-RoHS Compliant | /files/onsemiconductor-ffsh5065bf085-datasheets-1478.pdf | TO-247-2 | 10 Weeks | yes | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 2030pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 50A | 50A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSH2065A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | AVALANCHE | RoHS Compliant | /files/onsemiconductor-ffsh2065a-datasheets-1480.pdf | TO-247-2 | 2 | 10 Weeks | 2 | ACTIVE (Last Updated: 2 days ago) | yes | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | SINGLE | EFFICIENCY | No Recovery Time > 500mA (Io) | 183W | 650V | 1.75V | 0ns | Silicon Carbide Schottky | 1000A | 1 | 1085pF @ 1V 100kHz | 650V | 200μA @ 650V | 25A DC | -55°C~175°C |
