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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| RS1GLW RVG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | SOD-123W | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | Standard | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1D R3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s1mr3g-datasheets-8328.pdf | DO-214AC, SMA | 2 | 20 Weeks | EAR99 | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 1.5μs | Standard | 1A | 12pF @ 4V 1MHz | 200V | 1μA @ 200V | 1.1V @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-12A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | Not Applicable | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2000 | /files/dresdenelektronik-30125-datasheets-4096.pdf&product=ixys-dsep6012a-5978154 | 1.2kV | 60A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | 3 | Single | 230W | 1 | Rectifier Diodes | R-PSFM-T2 | 60A | 60A | 2.66V | 500A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500A | 650μA | 1.2kV | 500A | 1.2kV | TO-247AD | 40 ns | 40 ns | Standard | 1.2kV | 60A | 1 | 1200V | 650μA @ 1200V | 2.66V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| C4D08120E | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Surface Mount | Tube | 175°C | -55°C | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6 Weeks | Unknown | 3 | 136W | Single | TO-252-2 | 24.5A | 1.8V | 64A | 35μA | No Recovery Time > 500mA (Io) | 64A | 1.2kV | 64A | 0 s | Silicon Carbide Schottky | 1.2kV | 8A | 560pF @ 0V 1MHz | 1200V | 250μA @ 1200V | 3V @ 2A | 24.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1JLHRVG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-s1alrvg-datasheets-7819.pdf | DO-219AB | 2 | 10 Weeks | EAR99 | LOW POWER LOSS | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | 1.8μs | Standard | 1A | 9pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SD101CW-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/microcommercialco-sd101cwtp-datasheets-0843.pdf | SOD-123 | 2 | 12 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | SD101C | 2 | 125°C | 10 | 1 | Not Qualified | R-PDSO-G2 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.4W | 40V | 1ns | Schottky | 0.015A | 2.2pF @ 0V 1MHz | 40V | 200nA @ 30V | 900mV @ 15mA | 15mA DC | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC8065DY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, ECOPACK®2 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stpsc8065dy-datasheets-0787.pdf | TO-220-2 | 2 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | NO | SINGLE | NOT SPECIFIED | STPSC806 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 650V | 105μA | TO-220AC | 0ns | Silicon Carbide Schottky | 38A | 1 | 8A | 540pF @ 0V 1MHz | 650V | 105μA @ 650V | 1.45V @ 8A | 8A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-E4PU6006L-N3 | Vishay Semiconductor Diodes Division | $1.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Tube | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vse4pu6006ln3-datasheets-0725.pdf | TO-247-2 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 74ns | Standard | 600V | 50μA @ 600V | 1.7V @ 60A | 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-15ETH06FP-N3 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9mA | 400V | 1.8kA | 400V | Standard | 400V | 85A | 1 | 9mA @ 400V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||
| C3D08060A | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2009 | TO-220-2 | 10.41mm | 15.621mm | 4.699mm | 6 Weeks | Unknown | 2 | No | 100W | Single | 8A | 1.8V | 220A | 50μA | No Recovery Time > 500mA (Io) | 80A | 50μA | 600V | 220A | 0ns | Silicon Carbide Schottky | 600V | 8A | 441pF @ 0V 1MHz | 50μA @ 600V | 1.8V @ 8A | 24A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3D10170H | Cree/Wolfspeed | $10.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2007 | TO-247-2 | 25.93mm | 6 Weeks | Unknown | 2 | No | 231W | Single | 175°C | TO-247-2 | 14.4A | 2V | 55A | 60μA | No Recovery Time > 500mA (Io) | 55A | 20μA | 1.7kV | 55A | 1.7kV | 0ns | Silicon Carbide Schottky | 1.7kV | 14.4A | 827pF @ 0V 1MHz | 1700V | 60μA @ 1700V | 2V @ 10A | 14.4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| E4D20120A | Cree/Wolfspeed | $17.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, E | Through Hole | Tube | Not Applicable | TO-220-2 | 13 Weeks | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1500pF @ 0V 1MHz | 1200V | 200μA @ 1200V | 1.8V @ 20A | 54.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5618US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 2 μs | Standard | 600V | 1A | 1A | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||
| CVFD20065A | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Tube | 1 (Unlimited) | Pin | 175°C | -55°C | RoHS Compliant | 2014 | TO-220-2 | 10.41mm | 15.62mm | 4.7mm | 7 Weeks | 6.000006g | 2 | 187.5W | Single | TO-220-2 | 26A | 1.65V | No Recovery Time > 500mA (Io) | 206A | 300μA | 650V | 0ns | Silicon Carbide Schottky | 1100pF @ 0V 1MHz | 650V | 80μA @ 650V | 1.45V @ 20A | 57A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA16PB120-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vshfa16pb120n3-datasheets-0743.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 16A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 151W | 190A | 20μA | 1.2kV | 90 ns | Standard | 1.2kV | 16A | 1 | 1200V | 20μA @ 1200V | 3V @ 16A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| C3D04065E | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Tube | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/cree-c3d04065e-datasheets-2368.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6 Weeks | 3 | TO-252-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 251pF @ 0V 1MHz | 650V | 60μA @ 650V | 1.8V @ 4A | 13.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS70-00-E3-18 | Vishay Semiconductor Diodes Division | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bas7004e318-datasheets-9815.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 15 Weeks | 8.788352mg | 3 | 200mW | Single | SOT-23 | 200mA | 1V | Small Signal =< 200mA (Io), Any Speed | 600mA | 100nA | 70V | 600mA | 5 ns | Schottky | 70V | 200mA | 2pF @ 1V 1MHz | 70V | 100nA @ 50V | 1V @ 15mA | 200mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RB520S-30L2-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/microcommercialco-rb520s30l2tp-datasheets-0759.pdf | 0402 (1006 Metric) | 2 | 16 Weeks | EAR99 | YES | DUAL | NO LEAD | 260 | 125°C | 10 | 1 | R-PDSO-N2 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 30V | Schottky | 0.1A | 30V | 500nA @ 10V | 450mV @ 10mA | 100mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CS1J-E3/I | Vishay Semiconductor Diodes Division | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-cs1ge3i-datasheets-3805.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5 μs | Standard | 600V | 1A | 1A | 6pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4005G A0G | Taiwan Semiconductor Corporation | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-1n4005ga0g-datasheets-0752.pdf | DO-204AL, DO-41, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | Standard | 1A | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4004-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-1n4004e353-datasheets-9234.pdf | DO-204AL, DO-41, Axial | 15pF | 5.2mm | 2.7mm | 2.7mm | Lead Free | 2 | 18 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | WIRE | 1N4004 | 2 | Single | 1 | Rectifier Diodes | 1A | 1A | 1.1V | 45A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 30A | 5μA | 400V | 45A | 400V | Standard | 400V | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| LXA20T600 | Power Integrations |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Qspeed™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2011 | /files/powerintegrations-lxa20t600-datasheets-0780.pdf | TO-220-2 | 2 | 4 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | 3 | Single | 125W | 1 | 20A | 105A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 350A | 600V | 26.5 ns | 26.5 ns | Standard | 600V | 20A | 1 | 92pF @ 10V 1MHz | 250μA @ 600V | 3.1V @ 20A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| STTH1210DI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth1210di-datasheets-0783.pdf | 1kV | 12A | TO-220-2 Insulated, TO-220AC | 10.4mm | 9.3mm | 4.6mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | STTH1210 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 12A | 12A | 2V | 80A | ISOLATED | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 10μA | 1kV | 80A | 1kV | 48 ns | 48 ns | Standard | 1kV | 12A | 1 | 1000V | 10μA @ 1000V | 2V @ 12A | 175°C Max | |||||||||||||||||||||||||||||||||
| FFP08S60STU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stealth™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 1996 | /files/onsemiconductor-ffp08h60stu-datasheets-9904.pdf | TO-220-2 | 9.9mm | 9.2mm | 4.5mm | Lead Free | 2 | 4 Weeks | 2.16g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEEELING DIODE, HIGH RELIABILITY | Tin | No | 8541.10.00.80 | e3 | Single | 1 | Rectifier Diodes | 8A | 8A | 2.6V | 80A | ISOLATED | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 100μA | 600V | 80A | 600V | 30 ns | 30 ns | Standard | 600V | 8A | 1 | 100μA @ 600V | 2.6V @ 8A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| STTH3010W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth3010pi-datasheets-0592.pdf | 1kV | 30A | DO-247-2 (Straight Leads) | 12pF | 15.75mm | 5.15mm | Lead Free | 2 | 11 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) | STTH30 | 2 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 30A | 20A | 2V | 180A | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 180A | 15μA | 1kV | 180A | 1kV | 100 ns | 100 ns | Standard | 1kV | 30A | 1 | 1000V | 15μA @ 1000V | 2V @ 30A | 175°C Max | ||||||||||||||||||||||||||||||||||||
| VS-50WQ04FNHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs50wq04fnhm3-datasheets-0650.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 50WQ04 | 150°C | 10 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | TO-252AA | Schottky | 40V | 5.5A | 90A | 1 | 405pF @ 5V 1MHz | 40V | 3mA @ 40V | 510mV @ 5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1201A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 31.8mm | 11mm | 13 Weeks | Unknown | 2 | 1N1201 | Single | DO-203AA | 12A | 1.35V | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 240A | 2.25mA | 150V | 150V | Standard | 150V | 12A | 150V | 2.25mA @ 150V | 1.35V @ 12A | 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT4045BP-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vbt4045bpe34w-datasheets-0656.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4394mm | 9.144mm | 4.826mm | Lead Free | 2 | 14 Weeks | 2 | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | VBT4045 | 3 | Common Anode | 1 | Rectifier Diodes | 40A | 670mV | 240A | 3mA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3mA | 45V | 240A | Schottky | 45V | 40A | 1 | 3mA @ 45V | 670mV @ 40A | 40A DC | 200°C Max | |||||||||||||||||||||||||||||||||||||||||
| VS-1N1184 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 36.9062mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1184 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.7V | 400A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500A | 10mA | 100V | 400A | 100V | Standard | 100V | 35A | 1 | 10mA @ 100V | 1.7V @ 110A | -65°C~190°C |
