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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| S1DLWHRVG | Taiwan Semiconductor Corporation | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | SOD-123W | 2 | 10 Weeks | EAR99 | LOW POWER LOSS | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | Standard | 1A | 200V | 1μA @ 200V | 1.1V @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH1506DPI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth1506dpi-datasheets-0908.pdf | 600V | 15A | DOP3I-2 Insulated (Straight Leads) | 15.5mm | 12.85mm | 4.6mm | Lead Free | 2 | 8 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 6 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | STTH1506 | 2 | Single | 1 | Rectifier Diodes | 15A | 15A | 3.6V | 130A | ISOLATED | HYPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 130A | 20μA | 600V | 130A | 600V | 35 ns | 35 ns | Standard | 600V | 15A | 1 | 20μA @ 600V | 3.6V @ 15A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||
| STTH6006W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth6006w-datasheets-0810.pdf | DO-247-2 (Straight Leads) | 15.75mm | 20.15mm | 5.15mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 225 | STTH6006 | 2 | Single | 1 | Rectifier Diodes | 60A | 1.85V | 400A | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400A | 50μA | 600V | 400A | 600V | 60 ns | 60 ns | Standard | 600V | 60A | 1 | 50μA @ 600V | 1.85V @ 60A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| MBR3560R | GeneSiC Semiconductor | $15.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 35A | 600A | 1μA | SINGLE | ANODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 60V | Schottky, Reverse Polarity | 60V | 35A | 1 | 1.5mA @ 20V | 750mV @ 35A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAV103-GS18 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-bav103gs08-datasheets-2718.pdf | 100mA | DO-213AC, MINI-MELF, SOD-80 | 1.5pF | 3.7mm | 1.6mm | 1.6mm | Lead Free | 2 | 11 Weeks | Unknown | 2 | yes | EAR99 | Silver, Tin | No | 250mA | 8541.10.00.70 | e2 | Tin/Silver (Sn/Ag) | 250V | END | WRAP AROUND | 260 | BAV103 | 2 | Single | 30 | 500mW | 1 | Rectifier Diodes | 175°C | 250mA | 1V | 1A | 100nA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100nA | 250V | 1A | 200V | 50 ns | 50 ns | Standard | 200V | 250mA | 1.5pF @ 0V 1MHz | 100nA @ 200V | 1V @ 100mA | 250mA DC | 175°C Max | |||||||||||||||||||||||||||||
| STPSC12065DY | STMicroelectronics | $4.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, ECOPACK®2 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stpsc12065dy-datasheets-0819.pdf | TO-220-2 | 2 | 14 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | FREE WHEELING DIODE | NOT SPECIFIED | STPSC1206 | 175°C | Single | NOT SPECIFIED | 1 | 12A | CATHODE | HIGH VOLTAGE POWER | No Recovery Time > 500mA (Io) | 650V | 150μA | 0ns | Silicon Carbide Schottky | 650V | 12A | 1 | 750pF @ 0V 1MHz | 50μA @ 600V | 1.45V @ 12A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA16PB120-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vshfa16pb120n3-datasheets-0743.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 16A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 151W | 190A | 20μA | 1.2kV | 90 ns | Standard | 1.2kV | 16A | 1 | 1200V | 20μA @ 1200V | 3V @ 16A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| C3D04065E | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Tube | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/cree-c3d04065e-datasheets-2368.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6 Weeks | 3 | TO-252-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 251pF @ 0V 1MHz | 650V | 60μA @ 650V | 1.8V @ 4A | 13.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS70-00-E3-18 | Vishay Semiconductor Diodes Division | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bas7004e318-datasheets-9815.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 15 Weeks | 8.788352mg | 3 | 200mW | Single | SOT-23 | 200mA | 1V | Small Signal =< 200mA (Io), Any Speed | 600mA | 100nA | 70V | 600mA | 5 ns | Schottky | 70V | 200mA | 2pF @ 1V 1MHz | 70V | 100nA @ 50V | 1V @ 15mA | 200mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RB520S-30L2-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/microcommercialco-rb520s30l2tp-datasheets-0759.pdf | 0402 (1006 Metric) | 2 | 16 Weeks | EAR99 | YES | DUAL | NO LEAD | 260 | 125°C | 10 | 1 | R-PDSO-N2 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 30V | Schottky | 0.1A | 30V | 500nA @ 10V | 450mV @ 10mA | 100mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CS1J-E3/I | Vishay Semiconductor Diodes Division | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-cs1ge3i-datasheets-3805.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5 μs | Standard | 600V | 1A | 1A | 6pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4005G A0G | Taiwan Semiconductor Corporation | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-1n4005ga0g-datasheets-0752.pdf | DO-204AL, DO-41, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | Standard | 1A | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4004-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-1n4004e353-datasheets-9234.pdf | DO-204AL, DO-41, Axial | 15pF | 5.2mm | 2.7mm | 2.7mm | Lead Free | 2 | 18 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | WIRE | 1N4004 | 2 | Single | 1 | Rectifier Diodes | 1A | 1A | 1.1V | 45A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 30A | 5μA | 400V | 45A | 400V | Standard | 400V | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| LXA20T600 | Power Integrations |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Qspeed™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2011 | /files/powerintegrations-lxa20t600-datasheets-0780.pdf | TO-220-2 | 2 | 4 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | 3 | Single | 125W | 1 | 20A | 105A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 350A | 600V | 26.5 ns | 26.5 ns | Standard | 600V | 20A | 1 | 92pF @ 10V 1MHz | 250μA @ 600V | 3.1V @ 20A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| STTH1210DI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth1210di-datasheets-0783.pdf | 1kV | 12A | TO-220-2 Insulated, TO-220AC | 10.4mm | 9.3mm | 4.6mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | STTH1210 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 12A | 12A | 2V | 80A | ISOLATED | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 10μA | 1kV | 80A | 1kV | 48 ns | 48 ns | Standard | 1kV | 12A | 1 | 1000V | 10μA @ 1000V | 2V @ 12A | 175°C Max | |||||||||||||||||||||||||||||||||||
| STPSC8065DY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, ECOPACK®2 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stpsc8065dy-datasheets-0787.pdf | TO-220-2 | 2 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | NO | SINGLE | NOT SPECIFIED | STPSC806 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 650V | 105μA | TO-220AC | 0ns | Silicon Carbide Schottky | 38A | 1 | 8A | 540pF @ 0V 1MHz | 650V | 105μA @ 650V | 1.45V @ 8A | 8A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-E4PU6006L-N3 | Vishay Semiconductor Diodes Division | $1.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Tube | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vse4pu6006ln3-datasheets-0725.pdf | TO-247-2 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 74ns | Standard | 600V | 50μA @ 600V | 1.7V @ 60A | 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-15ETH06FP-N3 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9mA | 400V | 1.8kA | 400V | Standard | 400V | 85A | 1 | 9mA @ 400V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||
| C3D08060A | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2009 | TO-220-2 | 10.41mm | 15.621mm | 4.699mm | 6 Weeks | Unknown | 2 | No | 100W | Single | 8A | 1.8V | 220A | 50μA | No Recovery Time > 500mA (Io) | 80A | 50μA | 600V | 220A | 0ns | Silicon Carbide Schottky | 600V | 8A | 441pF @ 0V 1MHz | 50μA @ 600V | 1.8V @ 8A | 24A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3D10170H | Cree/Wolfspeed | $10.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2007 | TO-247-2 | 25.93mm | 6 Weeks | Unknown | 2 | No | 231W | Single | 175°C | TO-247-2 | 14.4A | 2V | 55A | 60μA | No Recovery Time > 500mA (Io) | 55A | 20μA | 1.7kV | 55A | 1.7kV | 0ns | Silicon Carbide Schottky | 1.7kV | 14.4A | 827pF @ 0V 1MHz | 1700V | 60μA @ 1700V | 2V @ 10A | 14.4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| E4D20120A | Cree/Wolfspeed | $17.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, E | Through Hole | Tube | Not Applicable | TO-220-2 | 13 Weeks | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1500pF @ 0V 1MHz | 1200V | 200μA @ 1200V | 1.8V @ 20A | 54.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5618US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 2 μs | Standard | 600V | 1A | 1A | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||
| CVFD20065A | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Tube | 1 (Unlimited) | Pin | 175°C | -55°C | RoHS Compliant | 2014 | TO-220-2 | 10.41mm | 15.62mm | 4.7mm | 7 Weeks | 6.000006g | 2 | 187.5W | Single | TO-220-2 | 26A | 1.65V | No Recovery Time > 500mA (Io) | 206A | 300μA | 650V | 0ns | Silicon Carbide Schottky | 1100pF @ 0V 1MHz | 650V | 80μA @ 650V | 1.45V @ 20A | 57A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPS16-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60eps16m3-datasheets-0667.pdf | TO-247-2 | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Standard | 1.6kV | 60A | 950A | 1 | 1600V | 100μA @ 1600V | 1.15V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFN20TJ6SGC9 | ROHM Semiconductor | $1.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | 2017 | TO-220-2 Full Pack | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 140ns | Standard | 150A | 1 | 20A | 600V | 10μA @ 600V | 1.55V @ 20A | 20A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.369kA | 9mA | 600V | 1.8kA | 600V | 500 ns | Standard | 600V | 85A | 1 | 9mA @ 600V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||
| C4D20120H | Cree/Wolfspeed | $18.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Tube | 1 (Unlimited) | TO-247-2 | 11 Weeks | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1.5nF @ 0V 1MHz | 1200V | 200μA @ 1200V | 1.8V @ 20A | 54A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS220AJHRTLL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rohmsemiconductor-scs220ajhrtll-datasheets-0513.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | e2 | Tin/Copper (Sn/Cu) | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 107W | 650V | 400μA | 0ns | Silicon Carbide Schottky | 53A | 1 | 20A | 730pF @ 1V 1MHz | 650V | 400μA @ 600V | 1.55V @ 20A | 20A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| C5D10170H | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Not Applicable | TO-247-2 | 11 Weeks | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 830pF @ 0V 1MHz | 1700V | 200μA @ 1700V | 1.8V @ 10A | 33A DC | -55°C~175°C |
