Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
VS-85HFL60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.151kA | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.369kA | 100μA | 600V | 1.151kA | 600V | 500 ns | 500 ns | Standard | 600V | 85A | 1 | 100μA @ 600V | 1.75V @ 266.9A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||
FFSP15120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ffsp15120a-datasheets-4837.pdf | TO-220-2 | 2 | 10 Weeks | 2.16g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | HIGH RELIABILITY, PD-CASE | 8541.10.00.80 | e3 | Tin (Sn) | 175°C | Single | 1 | R-PSFM-T2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | 300W | 1200V | 115A | 1.2kV | 200μA | TO-220AC | Silicon Carbide Schottky | 1 | 936pF @ 1V 100kHz | 1200V | 200μA @ 1200V | 1.75V @ 15A | 15A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
GB02SHT03-46 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-gb02sht0346-datasheets-0355.pdf | TO-206AB, TO-46-3 Metal Can | 18 Weeks | 3 | No Recovery Time > 500mA (Io) | 0 s | Silicon Carbide Schottky | 300V | 4A | 76pF @ 1V 1MHz | 5μA @ 300V | 1.6V @ 1A | 4A DC | -55°C~225°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MSC015SDA120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-msc010sda070k-datasheets-4425.pdf | TO-247-2 | 13 Weeks | TO-247 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1200V | 1.5V @ 15A | 15A DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RS1JTR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | DO-214AC, SMA | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | Standard | 15pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 1A | 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N3768R | GeneSiC Semiconductor | $7.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N3768R | 190°C | 1 | O-MUPM-D1 | 35A | 475A | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard, Reverse Polarity | 1kV | 35A | 1 | 1000V | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
S1M-HF | Comchip Technology | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-s1mhf-datasheets-4862.pdf | DO-214AC, SMA | 2 | 12 Weeks | YES | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | Standard | 1A | 1000V | 5μA @ 1000V | 1.1V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCS210KE2C | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | ROHS3 Compliant | 2011 | /files/rohm-scs210ke2c-datasheets-0330.pdf | TO-247-3 | 5.9mm | 20.95mm | 5.03mm | Lead Free | 3 | 12 Weeks | Unknown | 3 | EAR99 | not_compliant | 8541.10.00.80 | NOT SPECIFIED | SCS210 | Single | NOT SPECIFIED | 170W | 2 | 10A | 1.4V | GENERAL PURPOSE | 1.8 °C/W | No Recovery Time > 500mA (Io) | 100μA | 1.2kV | 0ns | Silicon Carbide Schottky | 1.2kV | 10A | 1 | 5A | 1200V | 10A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
SCS120AGC | ROHM Semiconductor | $9.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs106agc-datasheets-4405.pdf | TO-220-2 | Lead Free | 2 | EAR99 | No | 8541.10.00.80 | 97W | 175°C | Single | 1 | Rectifier Diodes | 20A | 1.5V | 80A | 400μA | No Recovery Time > 500mA (Io) | 400μA | 600V | 80A | 0 s | Silicon Carbide Schottky | 600V | 20A | 860pF @ 1V 1MHz | 400μA @ 600V | 1.7V @ 20A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBD6050LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-mmbd6050lt1g-datasheets-7127.pdf | 70V | 100mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.10.00.70 | e3 | Tin (Sn) | Halogen Free | NO | AXIAL | WIRE | 260 | MMBD6050 | 3 | Single | 40 | 225mW | 1 | Rectifier Diodes | 200mA | 200mA | 1.1V | 500mA | 100nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 100nA | 70V | 500mA | 4 ns | 4 ns | Standard | 70V | 200mA | 100nA @ 50V | 1.1V @ 100mA | 200mA DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
C3D08065I | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | RoHS Compliant | 2013 | /files/cree-c3d08065i-datasheets-0298.pdf | TO-220-2 Isolated Tab | 6 Weeks | 6.000006g | Unknown | 2 | 48W | Single | 8A | 1.8V | No Recovery Time > 500mA (Io) | 69A | 60μA | 650V | 0ns | Silicon Carbide Schottky | 650V | 8A | 441pF @ 0V 1MHz | 60μA @ 650V | 1.8V @ 8A | 16.5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N3892R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N3892R | 150°C | 1 | O-MUPM-D1 | 12A | 90A | SINGLE | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 300V | 300V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 12A | 1 | 25μA @ 50V | 1.4V @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCS112AGC | ROHM Semiconductor | $4.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs106agc-datasheets-4405.pdf | TO-220-2 | Lead Free | 2 | EAR99 | No | 8541.10.00.80 | 80W | 175°C | Single | 1 | Rectifier Diodes | 12A | 1.5V | 48A | 240μA | No Recovery Time > 500mA (Io) | 240μA | 600V | 48A | 0 s | Silicon Carbide Schottky | 600V | 12A | 516pF @ 1V 1MHz | 240μA @ 600V | 1.7V @ 12A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STTH1512PI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth1512pi-datasheets-4706.pdf | DOP3I-2 Insulated (Straight Leads) | Lead Free | 2 | 8 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | STTH1512 | 2 | Single | 1 | Rectifier Diodes | 15A | 2.1V | 150A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 15μA | 1.2kV | 200A | 1.2kV | 105 ns | 53 ns | Standard | 1.2kV | 15A | 1 | 1200V | 15μA @ 1200V | 2.1V @ 15A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||
STTH6010WY |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FR40MR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 500A | SINGLE | ANODE | 0.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard, Reverse Polarity | 1kV | 40A | 1 | 1000V | 25μA @ 100V | 1V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
C4D10120H | Cree/Wolfspeed | $4.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Tube | 1 (Unlimited) | TO-247-2 | 11 Weeks | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 754pF @ 0V 1MHz | 1200V | 250μA @ 1200V | 1.8V @ 10A | 31.5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW75-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-baw75tap-datasheets-4724.pdf | 300mA | DO-204AH, DO-35, Axial | 11 Weeks | 2 | Silver, Tin | Single | DO-35 | 150mA | 1V | 2A | 100nA | Fast Recovery =< 500ns, > 200mA (Io) | 35V | 2A | 4ns | 4 ns | Standard | 25V | 300mA | 4pF @ 0V 1MHz | 25V | 100nA @ 25V | 1V @ 30mA | 300mA DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCS220AGHRC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 20A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 130W | 650V | 400μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 730pF @ 1V 1MHz | 650V | 400μA @ 600V | 1.55V @ 20A | 20A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
FR85G02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.4V | 1.369kA | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.369kA | 25μA | 400V | 400V | 200 ns | 200 ns | Standard | 400V | 85A | 1 | 25μA @ 100V | 1.4V @ 85A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||
1N4154TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-1n4154tap-datasheets-4717.pdf | 300mA | DO-204AH, DO-35, Axial | 2 | 11 Weeks | EAR99 | Silver, Tin | 8541.10.00.70 | e2 | Tin/Silver (Sn/Ag) | 500mW | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | 300mA | 1V | 2A | 100nA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 35V | 2A | 4 ns | 4 ns | Standard | 25V | 150mA | 0.15A | 4pF @ 0V 1MHz | 100nA @ 25V | 1V @ 30mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
S85VR | GeneSiC Semiconductor | $13.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.1V | 1.05kA | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.4kV | 1.4kV | Standard, Reverse Polarity | 1.4kV | 85A | 1 | 1400V | 10μA @ 100V | 1.1V @ 85A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
BAW76-TAP | Vishay Semiconductor Diodes Division | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-baw76tap-datasheets-4713.pdf | 100mA | DO-204AH, DO-35, Axial | 11 Weeks | 2 | Silver, Tin | No | Single | DO-35 | 150mA | 1V | 2A | 100nA | Fast Recovery =< 500ns, > 200mA (Io) | 75V | 2A | 4 ns | 4 ns | Standard | 50V | 300mA | 2pF @ 0V 1MHz | 50V | 100nA @ 50V | 1V @ 100mA | 300mA DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH09G65C5XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idh09g65c5xksa2-datasheets-4752.pdf | TO-220-2 | Lead Free | 2 | 18 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 160μA | 0 s | Silicon Carbide Schottky | 650V | 9A | 396A | 1 | 9A | 270pF @ 1V 1MHz | 160μA @ 650V | 1.7V @ 9A | 9A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
VS-8EVH06-M3/I | Vishay Semiconductor Diodes Division | $0.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8evh06m3i-datasheets-3929.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | SlimDPAK | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 600V | 20μA @ 600V | 2.4V @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5554US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 5A | 1.3V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 100A | 2 μs | Standard | 1kV | 3A | 1 | 5A | 1000V | 1μA @ 1000V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
SCS208AGHRC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/rohm-scs208aghrc-datasheets-0271.pdf | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 8A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 68W | 650V | 160μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 8A | 291pF @ 1V 1MHz | 650V | 160μA @ 600V | 1.55V @ 8A | 8A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
MUR420 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur460a0g-datasheets-1971.pdf | DO-201AD, Axial | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | NO | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 5μA | 25ns | Standard | 125A | 1 | 4A | 65pF @ 4V 1MHz | 200V | 5μA @ 200V | 890mV @ 4A | 4A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
1N3879 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | 1N3879 | DO-4 | 6A | 90A | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 50V | 50V | 200 ns | 200 ns | Standard | 50V | 6A | 50V | 15μA @ 50V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCS215AGHRC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/rohm-scs215aghrc-datasheets-0274.pdf | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 15A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 110W | 650V | 300μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 550pF @ 1V 1MHz | 650V | 300μA @ 600V | 1.55V @ 15A | 15A DC | 175°C Max |
Please send RFQ , we will respond immediately.