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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| SS110LS RVG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss14lsrvg-datasheets-8533.pdf | SOD-123H | 10 Weeks | SOD-123HE | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 80pF @ 4V 1MHz | 100V | 50μA @ 100V | 800mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES3A-E3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-es3ae357t-datasheets-1550.pdf | 50V | 3A | DO-214AB, SMC | 45pF | 8.13mm | Lead Free | 2 | 21 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | ES3A | 2 | Single | 40 | 1 | Rectifier Diodes | 3A | 3A | 900mV | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 10μA | 50V | 100A | 50V | 20 ns | 30 ns | Standard | 50V | 3A | 1 | 45pF @ 4V 1MHz | 10μA @ 50V | 900mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| SS16LWHRVG | Taiwan Semiconductor Corporation | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | SOD-123W | 10 Weeks | SOD-123W | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 100μA @ 60V | 700mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RB751G-40-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/microcommercialco-rb751g40tp-datasheets-2037.pdf | SOD-723 | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.70 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | RB751G-40 | 2 | 125°C | 10 | 1 | Not Qualified | R-PDSO-F2 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | Schottky | 0.03A | 2pF @ 1V 1MHz | 30V | 500nA @ 30V | 370mV @ 1mA | 30mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR12100LPS-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/microcommercialco-mbr12100lpstp-datasheets-2026.pdf | TO-277, 3-PowerDFN | 3 | 12 Weeks | EAR99 | 8541.10.00.80 | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 250μA | TO-277B | Schottky | 250A | 1 | 12A | 100V | 250μA @ 100V | 800mV @ 12A | 12A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LL46-GS08 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-ll46gs08-datasheets-2071.pdf | DO-213AC, MINI-MELF, SOD-80 | 3.7mm | 1.6mm | 1.6mm | Lead Free | 2 | 11 Weeks | 2 | yes | EAR99 | No | 150mA | 8541.10.00.70 | e2 | Tin/Silver (Sn/Ag) | 100V | END | WRAP AROUND | 250 | 2 | Single | 40 | 200mW | 1 | Rectifier Diodes | 125°C | 125°C | 150mA | 1V | 750mA | 5μA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 750mA | 5μA | 100V | 750mA | 100V | Schottky | 100V | 150mA | 10pF @ 0V 1MHz | 5μA @ 75V | 1V @ 250mA | 125°C Max | ||||||||||||||||||||||||||||||||||||
| UPR15E3/TR7 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-upr15e3tr7-datasheets-2020.pdf | 150V | 2.5A | DO-216AA | 2.03mm | 1.14mm | 2.03mm | Lead Free | 1 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | DUAL | GULL WING | 260 | UPR15 | 2 | Single | 40 | 1 | S-PDSO-G1 | 2.5A | 2.5A | 975mV | 25A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 25A | 25 ns | 25 ns | Standard | 150V | 2.5A | 1 | 150V | 2μA @ 150V | 975mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| SS13LSHRVG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss14lsrvg-datasheets-8533.pdf | SOD-123H | 2 | 10 Weeks | EAR99 | LOW POWER LOSS | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | 125°C | 1 | R-PDSO-F2 | SINGLE | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | Schottky | 1A | 80pF @ 4V 1MHz | 30V | 400μA @ 30V | 500mV @ 1A | 1A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HER106G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her102ga0g-datasheets-8644.pdf | DO-204AL, DO-41, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 75ns | Standard | 1A | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR5H100MFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/onsemiconductor-mbr5h100mfst1g-datasheets-1960.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 4 Weeks | 506.605978mg | No SVHC | 5 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOW POWER LOSS | Tin | No | e3 | Halogen Free | YES | DUAL | FLAT | MBR5H100 | 5 | Single | 1 | Rectifier Diodes | 5A | 730mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 13mA | 100V | 200A | Schottky | 100V | 5A | 1 | 5A | 100μA @ 100V | 730mV @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| DST860S | Littelfuse Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/littelfuseinc-dst860s-datasheets-1586.pdf | TO-277, 3-PowerDFN | 23 Weeks | unknown | NOT SPECIFIED | NOT SPECIFIED | 8A | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 502pF @ 5V 1MHz | 60V | 600μA @ 60V | 610mV @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPX-H6VR | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-sjpxh6vr-datasheets-1598.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | Standard | 600V | 2A | 600V | 10μA @ 600V | 1.5V @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBRT15U50SP5-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-sbrt15u50sp57-datasheets-2000.pdf | PowerDI™ 5 | 3 | 24 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500μA | Super Barrier | 50V | 15A | 290A | 1 | 50V | 500μA @ 50V | 470mV @ 15A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5627-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-1n5625tap-datasheets-1963.pdf | SOD-64, Axial | Lead Free | 2 | 17 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Rectifier Diodes | 3A | 1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 100A | 800V | 7.5 μs | 6 μs | Avalanche | 800V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1μA @ 200V | 1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| S2GA R3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s2gar3g-datasheets-2009.pdf | DO-214AC, SMA | 2 | 10 Weeks | EAR99 | 8541.10.00.80 | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 10μA | 1.5μs | Standard | 50A | 1 | 2A | 30pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH3R06RL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth3r06u-datasheets-1989.pdf | 600V | 3A | DO-201AD, Axial | Lead Free | 2 | 8 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | FREE WHEELING DIODE | No | e3 | MATTE TIN | WIRE | STTH3R | 2 | Single | 1 | 3A | 3A | 1.7V | 55A | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 55A | 3μA | 600V | 55A | 600V | 35 ns | 30 ns | Standard | 600V | 3A | 1 | 3μA @ 600V | 1.7V @ 3A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| BYW82-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-byw82tr-datasheets-2018.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | 3A | 1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 100A | 200V | 7.5 μs | 6 ns | Avalanche | 200V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1μA @ 200V | 1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| S1KL R3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s1mr3g-datasheets-8328.pdf | DO-219AB | 2 | 10 Weeks | EAR99 | LOW POWER LOSS | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 150°C | 30 | 1 | R-PDSO-F2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800V | 1.8μs | Standard | 1A | 9pF @ 4V 1MHz | 800V | 5μA @ 800V | 1.1V @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS1JL R3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-rs1klrvg-datasheets-8026.pdf | DO-219AB | 10 Weeks | EAR99 | e3 | Matte Tin (Sn) | 260 | 30 | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | Standard | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 800mA | 800mA | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6EWH06FNTR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs6ewh06fntrm3-datasheets-1939.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 6EWH06 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 6A | 70A | CATHODE | HYPER ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 600V | 70A | 600V | TO-252AA | 27 ns | 18 ns | Standard | 600V | 6A | 1 | 6A | 50μA @ 600V | 2.1V @ 6A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VSKY10401406-G4-08 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vsky10401406g408-datasheets-2049.pdf | 0502 (1406 Metric) | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 225pF @ 0V 1MHz | 40V | 100μA @ 40V | 490mV @ 1A | 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5625-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-1n5625tap-datasheets-1963.pdf | SOD-64, Axial | 40pF | 2 | 17 Weeks | Unknown | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 3A | 1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 1μA | 400V | 100A | 400V | 7.5 μs | 6 μs | Avalanche | 400V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1μA @ 200V | 1V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| NRVTS12100EMFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nrvts12100emfst1g-datasheets-1861.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 2 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-F5 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 55μA | Schottky | 100V | 12A | 200A | 1 | 100V | 55μA @ 100V | 730mV @ 12A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| TSP10U120S S1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsp10u100ss1g-datasheets-7259.pdf | TO-277, 3-PowerDFN | 14 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 120V | 150μA @ 120V | 780mV @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR460 A0G | Taiwan Semiconductor Corporation | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur460a0g-datasheets-1971.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | NO | WIRE | 175°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 50ns | Standard | 125A | 1 | 4A | 65pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.28V @ 4A | 4A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SB5200TA | SMC Diode Solutions | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | DO-201AD, Axial | 17 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200V | 1mA @ 200V | 1.1V @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DST8100S-A | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/littelfuseinc-dst8100sa-datasheets-1839.pdf | TO-277, 3-PowerDFN | 3 | 23 Weeks | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | 8A | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 70μA | TO-277B | Schottky | 1 | 542pF @ 5V 1MHz | 100V | 70μA @ 100V | 680mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS3H9-E3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-ss3h9e357t-datasheets-1871.pdf | 90V | 3A | DO-214AB, SMC | 7.11mm | 2.62mm | 6.22mm | Lead Free | 2 | 11 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | Standard | DUAL | C BEND | 260 | SS3H9 | 2 | Single | 40 | 1 | Rectifier Diodes | 175°C | 3A | 3A | 800mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 20μA | 90V | 100A | 90V | Schottky | 90V | 3A | 1 | 20μA @ 90V | 800mV @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| VS-4EWH02FNTR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs4ewh02fntrm3-datasheets-1878.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | Unknown | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSSO-G2 | 4A | 950mV | 80A | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 3μA | 200V | 200V | TO-252AA | 20 ns | 23 ns | Standard | 200V | 4A | 1 | 4A | 3μA @ 200V | 950mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| V10PN50-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-v10pn50m386a-datasheets-1881.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 99.988768mg | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | Common Anode | 30 | 1 | 10A | 550mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 180A | 50V | 180A | 1500μA | TO-277A | Schottky | 50V | 10A | 1 | 1.5mA @ 50V | 550mV @ 10A | -40°C~150°C |
