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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Voltage | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N4148WL2-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/microcommercialco-1n4148wl2tp-datasheets-6175.pdf | 0402 (1006 Metric) | 2 | 18 Weeks | EAR99 | 8541.10.00.70 | YES | DUAL | NO LEAD | 260 | 150°C | 10 | 1 | R-PDSO-N2 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.1W | 100V | 4ns | Standard | 0.15A | 1.5pF @ 0V 1MHz | 100V | 5μA @ 75V | 1.25V @ 100mA | 150mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LS4148-GS18 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-ls4148gs18-datasheets-6237.pdf | 50A | DO-213AC, MINI-MELF, SOD-80 | 4pF | 3.5mm | 1.7mm | 1.7mm | Lead Free | 2 | 6 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.70 | e2 | TIN SILVER | END | WRAP AROUND | 250 | LS4148 | 2 | Single | 40 | 500mW | 1 | 175°C | 150mA | 1V | 2A | 50μA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 2A | 5μA | 100V | 2A | 75V | 8 ns | 8 ns | Standard | 75V | 150mA | 0.15A | 4pF @ 0V 1MHz | 5μA @ 75V | 1V @ 50mA | 175°C Max | ||||||||||||||||||||||||||||||||||||
| LS410860 | Powerex Inc. | $152.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/powerexinc-ls410860-datasheets-6086.pdf | POW-R-BLOK™ Module | 2 | 20 Weeks | 2 | yes | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | 2 | 150°C | -40°C | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 600A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 800V | 600A | 1 | 40mA @ 800V | 1.19V @ 1800A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4149TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2004 | /files/onsemiconductor-1n4149tr-datasheets-6117.pdf | 100V | 500mA | 1.91mm | DO-204AH, DO-35, Axial | 2pF | 4.56mm | Lead Free | 18 Weeks | 80g | No SVHC | 2 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | 8541.10.00.70 | e3 | 1N4149 | Single | 500mW | 1 | Rectifier Diodes | 500mA | 500mA | 1V | 4A | Fast Recovery =< 500ns, > 200mA (Io) | 4A | 25nA | 100V | 4A | 100V | 4 ns | 4 ns | Standard | 100V | 500mA | 2pF @ 0V 1MHz | 25nA @ 20V | 1V @ 10mA | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| 1N4148-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-1n4148tap-datasheets-6051.pdf | 1.75mm | DO-204AH, DO-35, Axial | 4pF | 3.4mm | 1.75mm | 1.7mm | Lead Free | 11 Weeks | Unknown | 2 | No | 3A | 75V | 500mW | 1N4148 | Single | 500mW | 175°C | DO-35 | 150mA | 1V | 2A | 5μA | Fast Recovery =< 500ns, > 200mA (Io) | 2A | 5μA | 100V | 2A | 75V | 8 ns | 8 ns | Standard | 75V | 300mA | 4pF @ 0V 1MHz | 75V | 25nA @ 20V | 1V @ 10mA | 300mA DC | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N4148TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | 175°C | -65°C | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4148tap-datasheets-6051.pdf | 150A | 1.75mm | DO-204AH, DO-35, Axial | 4pF | 3.4mm | 1.75mm | 1.75mm | Lead Free | 11 Weeks | 137.013245mg | Unknown | 2 | Silver, Tin | No | 2A | 75V | 500mW | 1N4148 | Single | 440mW | 175°C | DO-35 | 300mA | 1V | 2A | Fast Recovery =< 500ns, > 200mA (Io) | 2A | 5μA | 100V | 2A | 75V | 8ns | 8 ns | Standard | 75V | 300mA | 4pF @ 0V 1MHz | 75V | 25nA @ 20V | 1V @ 10mA | 300mA DC | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| BAS16LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/onsemiconductor-bas16lt1g-datasheets-7493.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.10.00.70 | e3 | Tin (Sn) | Halogen Free | YES | DUAL | GULL WING | 260 | BAS16 | 3 | Single | 40 | 300mW | 1 | Rectifier Diodes | 200mA | 200mA | 1.25V | 1μA | Small Signal =< 200mA (Io), Any Speed | SILICON | 500mA | 1μA | 75V | 6 ns | 6 ns | Standard | 75V | 200mA | 2pF @ 0V 1MHz | 100V | 1μA @ 100V | 1.25V @ 150mA | 200mA DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| V12P10-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-v12p10m386a-datasheets-5272.pdf | TO-277, 3-PowerDFN | 4.75mm | 1.2mm | 6.15mm | Lead Free | 3 | 10 Weeks | Unknown | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | V12P10 | 3 | Common Anode | 1 | Rectifier Diodes | 12A | 700mV | 200A | 250μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 250μA | 100V | 200A | TO-277A | 4 ns | Schottky | 100V | 12A | 1 | 250μA @ 100V | 700mV @ 12A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| APT30S20BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | /files/microsemicorporation-apt30s20bg-datasheets-6151.pdf | 200V | 45A | TO-247-2 | Lead Free | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | Standard | 3 | Single | 1 | R-PSFM-T2 | 45A | 45A | 850mV | CATHODE | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 320A | 500μA | 200V | 320A | 55 ns | Schottky | 200V | 45A | 1 | 200V | 500μA @ 200V | 850mV @ 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| BY228TR | Vishay Semiconductor Diodes Division | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 140°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by228tr-datasheets-5078.pdf | SOD-64, Axial | Lead Free | 17 Weeks | 2 | Silver, Tin | No | BY228 | Single | SOD-64 | 3A | 1.5V | 50A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1.65kV | 50A | 1.65kV | 20 μs | 20 μs | Avalanche | 1.5kV | 3A | 1500V | 5μA @ 1500V | 1.5V @ 5A | 3A | 140°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N914TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | /files/onsemiconductor-fdll4148-datasheets-7355.pdf&product=onsemiconductor-1n914tr-5831764 | 100V | 200mA | DO-204AH, DO-35, Axial | 4pF | 4.56mm | 1.91mm | 1.91mm | Lead Free | 2 | 18 Weeks | 80g | No SVHC | 2 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | Tin | No | 8541.10.00.70 | e3 | WIRE | 1N914 | Single | 500mW | 1 | Rectifier Diodes | 200mA | 200mA | 1V | 4A | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 4A | 5μA | 100V | 4A | 100V | 4 ns | 4 ns | Standard | 100V | 200mA | 4pF @ 0V 1MHz | 5μA @ 75V | 1V @ 10mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-HFA135NH40PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Chassis Mount, Panel, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vshfa135nh40pbf-datasheets-6016.pdf | D-67 HALF-PAK | 40mm | 17.5mm | 21mm | 1 | 14 Weeks | 2 | EAR99 | PD-CASE, UL RECOGNIZED | unknown | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | Single | NOT SPECIFIED | 463W | 1 | R-PUFM-X1 | 275A | 900A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3mA | 400V | 900A | 400V | 120 ns | 120 ns | Standard | 400V | 275A | 1 | 3mA @ 400V | 2V @ 270A | ||||||||||||||||||||||||||||||||||||||||||||||||
| 1N914BTR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdll4148-datasheets-7355.pdf&product=onsemiconductor-1n914btr-5831766 | 100V | 200mA | DO-204AH, DO-35, Axial | 4pF | 4.56mm | 1.91mm | 1.91mm | Lead Free | 2 | 18 Weeks | 80g | No SVHC | 2 | ACTIVE (Last Updated: 17 hours ago) | yes | EAR99 | Tin | No | 8541.10.00.70 | e3 | WIRE | 1N914B | Single | 500mW | 1 | Rectifier Diodes | 200mA | 300mA | 1V | 4A | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 4A | 5μA | 100V | 4A | 100V | 4 ns | 4 ns | Standard | 100V | 200mA | 4pF @ 0V 1MHz | 5μA @ 75V | 1V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| 1N914-T50A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/onsemiconductor-fdll4148-datasheets-7355.pdf | 100V | 200mA | DO-204AH, DO-35, Axial | 4pF | Lead Free | 2 | 2 Weeks | 80g | 2 | ACTIVE (Last Updated: 19 hours ago) | yes | Tin | No | e3 | WIRE | 1N914 | Single | 500mW | 1 | Rectifier Diodes | 200mA | 300mA | 1V | 4A | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 100V | 4A | 100V | 4 ns | 4 ns | Standard | 100V | 200mA | 4pF @ 0V 1MHz | 5μA @ 75V | 1V @ 10mA | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| 1N4448TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/onsemiconductor-fdll4148-datasheets-7355.pdf | 100V | 200mA | 1.91mm | DO-204AH, DO-35, Axial | 2pF | 6.35mm | 4.56mm | 6.35mm | Lead Free | 18 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 1 week ago) | Tin | No | 2A | Standard | 75V | 1N4448 | Single | 500mW | DO-35 | 200mA | 200mA | 1V | 4A | Small Signal =< 200mA (Io), Any Speed | 4A | 5μA | 100V | 4A | 100V | 4 ns | 4 ns | Standard | 100V | 200mA | 2pF @ 0V 1MHz | 100V | 5μA @ 75V | 1V @ 100mA | 200mA | 175°C Max | |||||||||||||||||||||||||||||||||||||||||
| 1SS133M R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-1ss133mr0g-datasheets-6060.pdf | DO-204AG, DO-34, Axial | 2 | 20 Weeks | EAR99 | 8541.10.00.70 | e3 | Tin (Sn) | NO | WIRE | 175°C | 1 | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.3W | 90V | 4ns | Standard | 0.15A | 4pF @ 0V 1MHz | 90V | 500nA @ 80V | 1.2V @ 150mA | 150mA | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4148-T50R | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-fdll4148-datasheets-7355.pdf | DO-204AH, DO-35, Axial | 2 | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | NO | WIRE | NOT SPECIFIED | 1N4148 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 100V | 4ns | Standard | 4A | 0.2A | 4pF @ 0V 1MHz | 100V | 5μA @ 75V | 1V @ 10mA | 200mA | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N914ATR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | /files/onsemiconductor-fdll4148-datasheets-7355.pdf&product=onsemiconductor-1n914atr-5831776 | 100V | 200mA | DO-204AH, DO-35, Axial | 4pF | 4.56mm | 1.91mm | 1.91mm | Lead Free | 2 | 18 Weeks | 80g | No SVHC | 2 | ACTIVE (Last Updated: 16 hours ago) | yes | EAR99 | Tin | No | 8541.10.00.70 | e3 | WIRE | 1N914A | Single | 500mW | 1 | Rectifier Diodes | 200mA | 200mA | 1V | 4A | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 4A | 5μA | 100V | 4A | 100V | 4 ns | 4 ns | Standard | 100V | 200mA | 4pF @ 0V 1MHz | 5μA @ 75V | 1V @ 20mA | 175°C Max | ||||||||||||||||||||||||||||||||||||||
| DSEI60-12A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei6012a-datasheets-5983.pdf&product=ixys-dsei6012a-5831756 | 1.2kV | 52A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | 3 | Single | 189W | 1 | Rectifier Diodes | 52A | 52A | 2.55V | 450A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 450A | 2.2mA | 1.2kV | 450A | 1.2kV | 60 ns | 60 ns | Standard | 1.2kV | 52A | 1 | 1200V | 2.2mA @ 1200V | 2.55V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| MDO500-22N1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 140°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-mdo50012n1-datasheets-5944.pdf | Y1-CU | Lead Free | 28 Weeks | 2 | MD*500 | Single | Y1-CU | 1.3V | Standard Recovery >500ns, > 200mA (Io) | 16kA | 2.2kV | Standard | 2.2kV | 560A | 576pF @ 700V 1MHz | 2200V | 30mA @ 2200V | 1.3V @ 1200A | 560A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWF12S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ewf12sm3-datasheets-5992.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | 1.3V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 100μA | 1.2kV | 150A | TO-252AA | 270 ns | Standard | 1.2kV | 8A | 1 | 8A | 1200V | 100μA @ 1200V | 1.3V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| UES1302 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -55°C | RoHS Compliant | 1996 | /files/microsemicorporation-ues1302-datasheets-5997.pdf | 100V | 6A | Axial | Lead Free | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Single | 1 | 6A | 6A | 925mV | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 30 ns | Standard | 100V | 6A | 1 | 5μA @ 100V | 925mV @ 6A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-T110HF100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vst40hf60-datasheets-7352.pdf | 110A | D-55 T-Module | 2 | 12 Weeks | Unknown | 55 | EAR99 | UL APPROVED | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PUFM-X2 | 110A | 1.35V | 2.1kA | ISOLATED | HIGH VOLTAGE POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 20mA | 1kV | 2.1kA | 1kV | Standard | 1kV | 110A | 1 | 1000V | 20mA @ 1000V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFPF10F150STU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 1996 | 1.5kV | 10A | TO-220-2 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 2 | 8 Weeks | 2.565g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 10A | 10A | 1.6V | 100A | ISOLATED | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 10μA | 1.5kV | 100A | 1.5kV | 170 ns | 170 ns | Standard | 1.5kV | 10A | 1 | 1500V | 10μA @ 1500V | 1.6V @ 10A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| 1N5809 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 30 ns | Standard | 100V | 3A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FJH1100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-fjh1100-datasheets-5946.pdf | 15V | 150mA | 1.91mm | DO-204AH, DO-35, Axial | 2pF | 4.56mm | 4.56mm | 1.91mm | Lead Free | 2 | 18 Weeks | 80g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.10.00.70 | e3 | Tin (Sn) | WIRE | Single | 250mW | 1 | Rectifier Diodes | 150mA | 150mA | 1.07V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 10nA | 30V | 5V | Standard | 15V | 150mA | 2pF @ 0V 1MHz | 10pA @ 15V | 1.07V @ 100mA | 150mA DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||
| VS-300UR60A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vs300ur60a-datasheets-5951.pdf | DO-205AB, DO-9, Stud | 1 | 11 Weeks | Unknown | 2 | No | Nickel (Ni) | UPPER | HIGH CURRENT CABLE | Single | 1 | O-MUPM-H1 | 300A | 1.4V | 6.85kA | GENERAL PURPOSE | 0.08 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 6.85kA | 40mA | 600V | 6.85kA | 600V | Standard, Reverse Polarity | 600V | 300A | 1 | 40mA @ 600V | 1.4V @ 942A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GB05MPS33-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | RoHS Compliant | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 14 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 288pF @ 1V 1MHz | 3300V | 10μA @ 3kV | 3V @ 5A | 14A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60D60BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/microsemicorporation-apt60d60bg-datasheets-5958.pdf&product=microsemicorporation-apt60d60bg-5831749 | 600V | 60A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | Tin | No | 8541.10.00.80 | e1 | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 60A | 60A | 1.6V | 600A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 600A | 130 ns | 40 ns | Standard | 600V | 60A | 1 | 600V | 250μA @ 600V | 1.8V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| IDW40G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-idw40g65c5xksa1-datasheets-5961.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 38.000013g | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | 183W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 40A | 1.5V | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 182A | 220μA | 650V | 182A | 0 s | Silicon Carbide Schottky | 650V | 40A | 1 | 650V | 1140pF @ 1V 1MHz | 220μA @ 650V | 1.7V @ 40A | 40A DC | -55°C~175°C |
