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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MB3035S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mb3045se38w-datasheets-5196.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 35V | 200A | Schottky | 35V | 30A | 1 | 980pF @ 4V 1MHz | 200μA @ 35V | 700mV @ 30A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| RGP10BE-E3/91 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 12 Weeks | 2 | No | Single | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 30A | 150 ns | Standard | 100V | 1A | 15pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| NHPJ15S600G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-nhpv15s600g-datasheets-4211.pdf | TO-220-2 Full Pack | Lead Free | 2 | 13 Weeks | 2 | CONSULT SALES OFFICE (Last Updated: 1 day ago) | yes | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NO | 2 | Single | 1 | Rectifier Diodes | 15A | 2.7V | 150A | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 100mA | 600V | 150A | 50 ns | 50 ns | Standard | 600V | 15A | 1 | 600V | 60μA @ 600V | 3.2V @ 15A | -55°C~150°C | ||||||||||||||||||||||||||
| RGP10A-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150 ns | Standard | 50V | 1A | 1A | 15pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| FESE16FT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | TO-220-2 | 2 | 18 Weeks | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 300V | TO-220AC | 50 ns | 50 ns | Standard | 300V | 16A | 1 | 175pF @ 4V 1MHz | 10μA @ 300V | 1.3V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| GP10GE-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP10J-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3 μs | Standard | 600V | 1A | 1A | 8pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| SBE001-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sbe001tlw-datasheets-9595.pdf | SOT-23-6 | Lead Free | 7 Weeks | LIFETIME (Last Updated: 1 week ago) | yes | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | Schottky | 30V | 2A | 70pF @ 10V 1MHz | 30V | 100μA @ 15V | 550mV @ 2A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRB10H35HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 35V | 10A | 150A | 1 | 35V | 100μA @ 35V | 850mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| FESE16DT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2015 | TO-220-2 | 2 | 18 Weeks | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | TO-220AC | 35 ns | 35 ns | Standard | 200V | 16A | 1 | 175pF @ 4V 1MHz | 10μA @ 200V | 975mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| 1N4247GP-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4246gpe354-datasheets-8798.pdf | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 1A | 8pF @ 4V 1MHz | 600V | 1μA @ 600V | 1.2V @ 1A | 1A | -65°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYWE29-100-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bywe29200e345-datasheets-9541.pdf | TO-220-2 | 2 | 18 Weeks | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | TO-220AC | 25 ns | 25 ns | Standard | 100V | 8A | 1 | 8A | 45pF @ 4V 1MHz | 10μA @ 100V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| 1N4003GPHM3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4004e353-datasheets-9234.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | AEC-Q101 | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 200V | 1A | 1A | 2μs | 15pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N4002GP-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-1n4004e353-datasheets-9234.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 100V | 1A | 1A | 2μs | 15pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| GP10Y-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3 μs | Standard | 1.6kV | 1A | 1A | 5pF @ 4V 1MHz | 1600V | 5μA @ 1600V | 1.1V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| NUR460PU | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/weensemiconductors-nur460pl04u-datasheets-3019.pdf | DO-201AD, Axial | NUR460 | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Standard | 600V | 10μA @ 600V | 1.28V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRB10H35-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT APPLICABLE | 3 | 175°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 35V | 10A | 150A | 1 | 35V | 100μA @ 35V | 850mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| NUR460P/L05U | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/weensemiconductors-nur460pl04u-datasheets-3019.pdf | DO-201AD, Axial | NUR460 | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Standard | 600V | 10μA @ 1.5V | 1.28V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FESE8GT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fese8gte345-datasheets-9583.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | Single | 1 | R-PSFM-T2 | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | TO-220AC | 50 ns | 50 ns | Standard | 400V | 8A | 1 | 8A | 85pF @ 4V 1MHz | 10μA @ 400V | 1.3V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| BYC15-600PQ | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-220-2 | BYC15-600 | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | Standard | 600V | 10μA @ 600V | 3.2V @ 15A | 15A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRB10H35-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 35V | 10A | 150A | 1 | 35V | 100μA @ 35V | 850mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| NHPJ08S600G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | /files/onsemiconductor-nhpj08s600g-datasheets-9592.pdf | TO-220-2 Full Pack | Lead Free | 2 | 13 Weeks | 2 | yes | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NO | 2 | Single | 1 | Rectifier Diodes | 8A | 3.2V | 80A | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 30μA | 600V | 80A | 50 ns | 50 ns | Standard | 600V | 8A | 1 | 8A | 600V | 30μA @ 600V | 3.2V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||
| GP10-4004EHM3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FESE8JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fese8hte345-datasheets-9039.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | TO-220AC | 50 ns | Standard | 600V | 8A | 125A | 1 | 8A | 50pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.5V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| GP10W-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 25A | 3 μs | Standard | 1.5kV | 1A | 1A | 5pF @ 4V 1MHz | 1500V | 5μA @ 1500V | 1.1V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| GP10GEHE3/93 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3 μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP10JHM3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3 μs | Standard | 600V | 1A | 1A | 8pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| MB3035S-E3/8W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mb3045se38w-datasheets-5196.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 35V | 200A | Schottky | 35V | 30A | 1 | 980pF @ 4V 1MHz | 200μA @ 35V | 700mV @ 30A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| GP10B-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3 μs | Standard | 100V | 1A | 1A | 8pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| GP10B-4002-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3 μs | Standard | 100V | 1A | 8pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | 1A | -65°C~175°C |
