Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RD0504T-P-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Fast Recovery =< 500ns, > 200mA (Io) | 17 ns | Standard | 400V | 5A | 400V | 20μA @ 400V | 1.5V @ 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UD0506T-TL-HX | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | Standard | 600V | 5A | 600V | 10μA @ 600V | 1.3V @ 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYC30WT-600PQ | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | Standard | 600V | 10μA @ 600V | 2.75V @ 30A | 30A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N4005GP-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4004e353-datasheets-9234.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 600V | 1A | 1A | 2μs | 15pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
FESE8GT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fese8gte345-datasheets-9583.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | Single | 1 | R-PSFM-T2 | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | TO-220AC | 50 ns | 50 ns | Standard | 400V | 8A | 1 | 8A | 85pF @ 4V 1MHz | 10μA @ 400V | 1.3V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
BYC15-600PQ | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-220-2 | BYC15-600 | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | Standard | 600V | 10μA @ 600V | 3.2V @ 15A | 15A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRB10H35-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 35V | 10A | 150A | 1 | 35V | 100μA @ 35V | 850mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||||
NHPJ08S600G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | /files/onsemiconductor-nhpj08s600g-datasheets-9592.pdf | TO-220-2 Full Pack | Lead Free | 2 | 13 Weeks | 2 | yes | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NO | 2 | Single | 1 | Rectifier Diodes | 8A | 3.2V | 80A | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 30μA | 600V | 80A | 50 ns | 50 ns | Standard | 600V | 8A | 1 | 8A | 600V | 30μA @ 600V | 3.2V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||
FESE16FT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | TO-220-2 | 2 | 18 Weeks | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 300V | TO-220AC | 50 ns | 50 ns | Standard | 300V | 16A | 1 | 175pF @ 4V 1MHz | 10μA @ 300V | 1.3V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
GP10GE-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
GP10J-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3 μs | Standard | 600V | 1A | 1A | 8pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
SBE001-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sbe001tlw-datasheets-9595.pdf | SOT-23-6 | Lead Free | 7 Weeks | LIFETIME (Last Updated: 1 week ago) | yes | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | Schottky | 30V | 2A | 70pF @ 10V 1MHz | 30V | 100μA @ 15V | 550mV @ 2A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRB10H35HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 35V | 10A | 150A | 1 | 35V | 100μA @ 35V | 850mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||||
FESE16DT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2015 | TO-220-2 | 2 | 18 Weeks | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | TO-220AC | 35 ns | 35 ns | Standard | 200V | 16A | 1 | 175pF @ 4V 1MHz | 10μA @ 200V | 975mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
1N4247GP-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4246gpe354-datasheets-8798.pdf | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 1A | 8pF @ 4V 1MHz | 600V | 1μA @ 600V | 1.2V @ 1A | 1A | -65°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYWE29-100-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bywe29200e345-datasheets-9541.pdf | TO-220-2 | 2 | 18 Weeks | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | TO-220AC | 25 ns | 25 ns | Standard | 100V | 8A | 1 | 8A | 45pF @ 4V 1MHz | 10μA @ 100V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||||||||
1N4003GPHM3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4004e353-datasheets-9234.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | AEC-Q101 | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 200V | 1A | 1A | 2μs | 15pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
1N4002GP-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-1n4004e353-datasheets-9234.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 100V | 1A | 1A | 2μs | 15pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
GP10Y-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3 μs | Standard | 1.6kV | 1A | 1A | 5pF @ 4V 1MHz | 1600V | 5μA @ 1600V | 1.1V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
NUR460PU | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/weensemiconductors-nur460pl04u-datasheets-3019.pdf | DO-201AD, Axial | NUR460 | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Standard | 600V | 10μA @ 600V | 1.28V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRB10H35-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT APPLICABLE | 3 | 175°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 35V | 10A | 150A | 1 | 35V | 100μA @ 35V | 850mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||||
NUR460P/L05U | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/weensemiconductors-nur460pl04u-datasheets-3019.pdf | DO-201AD, Axial | NUR460 | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Standard | 600V | 10μA @ 1.5V | 1.28V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FESE16GT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | TO-220-2 | 2 | 18 Weeks | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | TO-220AC | 50 ns | 50 ns | Standard | 400V | 16A | 1 | 175pF @ 4V 1MHz | 10μA @ 400V | 1.3V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
UGE8HT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uge8jte345-datasheets-8990.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | TO-220AC | 25 ns | Standard | 500V | 8A | 100A | 1 | 8A | 500V | 30μA @ 500V | 1.75V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
BYWE29-200-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bywe29200e345-datasheets-9541.pdf | TO-220-2 | Lead Free | 2 | 18 Weeks | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | TO-220AC | 25 ns | 25 ns | Standard | 200V | 8A | 1 | 8A | 45pF @ 4V 1MHz | 10μA @ 200V | 1.3V @ 20A | -65°C~150°C | |||||||||||||||||||||||||||||||
GP10BE-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3 μs | Standard | 100V | 1A | 8pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
GP10T-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3 μs | Standard | 1.3kV | 1A | 1A | 5pF @ 4V 1MHz | 1300V | 5μA @ 1300V | 1.1V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
GP10D-4003-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3 μs | Standard | 200V | 1A | 8pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
GP10YHM3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3 μs | Standard | 1.6kV | 1A | 1A | 5pF @ 4V 1MHz | 1600V | 5μA @ 1600V | 1.1V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
GP10-4004EHM3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C |
Please send RFQ , we will respond immediately.