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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Number of Outputs | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| DB2X41400L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2010 | /files/panasonicelectroniccomponents-db2x41400l-datasheets-5162.pdf | SOD-123F | 2.6mm | 800μm | 1.6mm | 2 | 10 Weeks | Unknown | 2 | EAR99 | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | DB2X414 | Single | NOT SPECIFIED | 1 | 2A | 490mV | 15A | 200μA | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15A | 200μA | 40V | 30 ns | 30 ns | Schottky | 40V | 2A | 1 | 2A | 70pF @ 10V 1MHz | 200μA @ 40V | 490mV @ 2A | 125°C Max | |||||||||||||||||||||||||||||||||||
| SPV1001D40 | STMicroelectronics | $1.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 3 (168 Hours) | 175°C | -40°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-spv1001t40-datasheets-4700.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 25.4mm | 6.35mm | 6.35mm | 2 | 4.535924g | Unknown | 3 | EAR99 | LOW LEAKAGE CURRENT | No | SINGLE | GULL WING | SPV1001 | 3 | 1 | R-PSSO-G2 | 16A | 920mV | SINGLE | CATHODE | GENERAL PURPOSE | 1 | SILICON | 40V | 250A | Standard | 40V | 16A | 1 | 1μA @ 40V | 230mV @ 16A | 16A DC | -45°C~175°C | |||||||||||||||||||||||||||||||||||||||
| AR4PJHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pdm386a-datasheets-6420.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AR4PJ | 3 | Common Anode | 1 | Rectifier Diodes | 4A | 65A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600nA | 600V | 65A | 600V | TO-277A | 140 ns | 110 ns | Avalanche | 600V | 2A | 1 | 2A | 77pF @ 4V 1MHz | 10μA @ 600V | 1.6V @ 4A | 2A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| AU3PJHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pjhm3ai-datasheets-3653.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | DUAL | FLAT | AU3PJ | 3 | Common Anode | 1 | 3A | 45A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 410nA | 600V | 45A | 600V | TO-277A | 75 ns | 66 ns | Avalanche | 600V | 1.7A | 1 | 72pF @ 4V 1MHz | 10μA @ 600V | 1.9V @ 3A | 1.7A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| AU3PMHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pmm386a-datasheets-4086.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AU3PM | 3 | Common Anode | 1 | Rectifier Diodes | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 45A | TO-277A | 75 ns | Avalanche | 1kV | 1.4A | 1 | 42pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 2.5V @ 3A | 1.4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| AR3PDHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pdm386a-datasheets-5460.pdf | TO-277, 3-PowerDFN | 3 | No | AR3PD | Common Anode | TO-277A (SMPC) | 3A | 1.6V | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 50A | 140 ns | Avalanche | 200V | 1.8A | 44pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.6V @ 3A | 1.8A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV29FD-600,118 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | not_compliant | e3 | Tin (Sn) | IEC-60134 | YES | SINGLE | GULL WING | BYV29-600 | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50μA | 35ns | Standard | 100A | 1 | 600V | 50μA @ 600V | 1.9V @ 8A | 9A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| AR3PGHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pdm386a-datasheets-5460.pdf | TO-277, 3-PowerDFN | 3 | No | AR3PG | Common Anode | TO-277A (SMPC) | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 400V | 50A | 140 ns | Avalanche | 400V | 1.8A | 44pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.6V @ 3A | 1.8A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RB521S-30LP-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microcommercialco-rb521s30lptp-datasheets-4959.pdf | SOD-882 | 2 | 8 Weeks | EAR99 | compliant | 8541.10.00.70 | e3 | Matte Tin (Sn) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | RB521S-30 | 2 | 125°C | NOT SPECIFIED | 1 | Not Qualified | R-PBCC-N2 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 30V | Schottky | 0.1A | 30V | 10μA @ 10V | 350mV @ 10mA | 100mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| AU3PKHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pmm386a-datasheets-4086.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AU3PK | 3 | Common Anode | 1 | Rectifier Diodes | 3A | 2.5V | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 45A | TO-277A | 75 ns | Avalanche | 800V | 1.4A | 1 | 42pF @ 4V 1MHz | 10μA @ 800V | 2.5V @ 3A | 1.4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| AU3PMHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pmm386a-datasheets-4086.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AU3PM | 3 | Common Anode | 1 | Rectifier Diodes | 3A | 45A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400nA | 1kV | 45A | 1kV | TO-277A | 75 ns | 58 ns | Avalanche | 1kV | 1.4A | 1 | 42pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 2.5V @ 3A | 1.4A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| AR4PJHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pdm386a-datasheets-6420.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AR4PJ | 3 | Common Anode | 1 | Rectifier Diodes | 4A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 65A | TO-277A | 140 ns | Avalanche | 600V | 2A | 1 | 2A | 77pF @ 4V 1MHz | 10μA @ 600V | 1.6V @ 4A | 2A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| AS4PDHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | AEC-Q101 | DUAL | FLAT | 260 | AS4PD | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | TO-277A | 1.8 μs | Avalanche | 200V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 200V | 962mV @ 2A | 2.4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| AS4PMHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | AEC-Q101 | DUAL | FLAT | 260 | AS4PM | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 100A | TO-277A | 1.8 μs | Avalanche | 1kV | 2.4A | 1 | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 962mV @ 2A | 2.4A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||
| DB2X41500L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2000 | /files/panasonicelectroniccomponents-db2x41500l-datasheets-5194.pdf | SOD-123F | 2.6mm | 800μm | 1.6mm | Lead Free | 2 | 10 Weeks | No SVHC | 2 | EAR99 | Tin | unknown | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | DB2X415 | Single | NOT SPECIFIED | 1 | 3A | 550mV | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 200μA | 40V | 50A | 25 ns | Schottky | 40V | 3A | 1 | 3A | 70pF @ 10V 1MHz | 200μA @ 40V | 550mV @ 3A | 125°C Max | ||||||||||||||||||||||||||||||||||
| AU3PJHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pjhm3ai-datasheets-3653.pdf | TO-277, 3-PowerDFN | 3 | No | AU3PJ | Common Anode | TO-277A (SMPC) | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 600V | 45A | 75 ns | Avalanche | 600V | 1.7A | 72pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.9V @ 3A | 1.7A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-10ETF06FPPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-10etf02fp-datasheets-7445.pdf | TO-220-2 Full Pack | 8 Weeks | 2 | EAR99 | No | e3 | MATTE TIN OVER NICKEL | 10ETF06 | Single | 10A | 1.2V | 150A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 600V | 150A | 600V | 200 ns | 145 ns | Standard | 10A | 1.2V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| CMH05A(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2009 | SOD-128 | No | CMH05 | Single | M-FLAT (2.4x3.8) | 1A | 16 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 400V | 10A | 35 ns | Standard | 400V | 1A | 400V | 10μA @ 400V | 1.8V @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4PGHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | AEC-Q101 | DUAL | FLAT | 260 | AS4PG | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 100A | TO-277A | 1.8 μs | Avalanche | 400V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 400V | 962mV @ 2A | 2.4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| AU3PGHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pjhm3ai-datasheets-3653.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | MATTE TIN | DUAL | FLAT | AU3PG | 3 | Common Anode | 1 | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 45A | TO-277A | 75 ns | Avalanche | 400V | 1.7A | 1 | 72pF @ 4V 1MHz | 10μA @ 400V | 1.9V @ 3A | 1.7A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| AS4PGHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | 260 | AS4PG | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | 100A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 350nA | 400V | 100A | 400V | TO-277A | 1.8 μs | Avalanche | 400V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 400V | 962mV @ 2A | 2.4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||
| AU3PKHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pmm386a-datasheets-4086.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AU3PK | 3 | Common Anode | 1 | Rectifier Diodes | 3A | 45A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400nA | 800V | 45A | 800V | TO-277A | 75 ns | 58 ns | Avalanche | 800V | 1.4A | 1 | 42pF @ 4V 1MHz | 10μA @ 800V | 2.5V @ 3A | 1.4A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| AR4PDHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pdm386a-datasheets-6420.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AR4PD | 3 | Common Anode | 1 | Rectifier Diodes | 4A | 65A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600nA | 200V | 65A | 200V | TO-277A | 140 ns | 110 ns | Avalanche | 200V | 2A | 1 | 2A | 77pF @ 4V 1MHz | 10μA @ 200V | 1.6V @ 4A | 2A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| UGF12JTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug12jte345-datasheets-6932.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 12A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 135A | 50 ns | Standard | 600V | 12A | 1 | 30μA @ 600V | 1.75V @ 12A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6626US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, E | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 1N6626 | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 75A | 45 ns | Standard | 200V | 1.75A | 1 | 4A | 2μA @ 200V | 1.35V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| AR3PGHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pdm386a-datasheets-5460.pdf | TO-277, 3-PowerDFN | 3 | Tin | No | AR3PG | Common Anode | TO-277A (SMPC) | 3A | 50A | Fast Recovery =< 500ns, > 200mA (Io) | 330nA | 400V | 50A | 400V | 140 ns | 122 ns | Avalanche | 400V | 1.8A | 44pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.6V @ 3A | 1.8A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| AU2PKHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au2pmm386a-datasheets-0184.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AU2PK | 3 | Common Anode | 1 | Rectifier Diodes | 2A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 30A | TO-277A | 75 ns | Avalanche | 800V | 1.3A | 1 | 29pF @ 4V 1MHz | 10μA @ 800V | 2.5V @ 2A | 1.3A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| AU3PDHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pjhm3ai-datasheets-3653.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | MATTE TIN | DUAL | FLAT | AU3PD | 3 | Common Anode | 1 | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 45A | TO-277A | 75 ns | Avalanche | 200V | 1.7A | 1 | 72pF @ 4V 1MHz | 10μA @ 200V | 1.9V @ 3A | 1.7A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| AS4PDHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | AEC-Q101 | DUAL | FLAT | 260 | AS4PD | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | 100A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 350nA | 200V | 100A | 200V | TO-277A | 1.8 μs | Avalanche | 200V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 200V | 962mV @ 2A | 2.4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||
| AS3PMHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as3pgm386a-datasheets-3937.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AS3PM | 3 | Common Anode | 1 | Rectifier Diodes | 3A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 70A | TO-277A | 1.2 μs | Avalanche | 1kV | 2.1A | 1 | 37pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 920mV @ 1.5A | 2.1A DC | -55°C~175°C |
