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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 1N4148WSFL-G3-08 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-1n4148wsflg308-datasheets-9798.pdf | SC-76, SOD-323 | 1.8mm | 1mm | 1.35mm | 32.998845mg | 2 | EAR99 | Tin | unknown | 200mW | Single | 250mW | 150mA | 1.2V | 350mA | Small Signal =< 200mA (Io), Any Speed | 100μA | 100V | 350mA | 4 ns | 4 ns | Standard | 75V | 150mA | 5μA @ 75V | 1.2V @ 100mA | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| RP 1HV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rp1hv-datasheets-9713.pdf | Axial | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.70 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 100ns | Standard | 0.1A | 2000V | 2μA @ 2000V | 7V @ 100mA | 100mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBR1U30CSP-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr1u30csp7-datasheets-9898.pdf | 2-SMD, No Lead | 2 | 2 | EAR99 | e2 | Tin/Silver (Sn/Ag) | BOTTOM | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 1A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75μA | 30V | 12A | Super Barrier | 30V | 1A | 1A | 80pF @ 4V 1MHz | 75μA @ 30V | 480mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SSB44HE3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ssb44e352t-datasheets-1072.pdf | DO-214AA, SMB | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | SSB44 | 2 | Single | 40 | 1 | Rectifier Diodes | 4A | 450mV | 100A | 400μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | 40V | 100A | Schottky | 40V | 4A | 1 | 4A | 400μA @ 40V | 490mV @ 4A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| EK 04V1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ek04v-datasheets-1844.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | Schottky | 40A | 1A | 40V | 5mA @ 40V | 550mV @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS116T,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/nxpusainc-bas116t115-datasheets-9933.pdf | SC-75, SOT-416 | e3 | Tin (Sn) | YES | BAS116 | 3 | 150°C | 1 | Rectifier Diodes | SINGLE | Standard Recovery >500ns, > 200mA (Io) | 85V | 3μs | Standard | 4A | 0.215A | 2pF @ 0V 1MHz | 75V | 5nA @ 75V | 1.25V @ 150mA | 215mA DC | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30WQ04FNTRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs30wq04fntrpbf-datasheets-9826.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30WQ04 | 3 | Common Anode | 10 | 1 | 3.5A | 490mV | 500A | 2mA | CATHODE | HIGH POWER | 4.7 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500A | 2mA | 40V | 500A | Schottky | 40V | 3.5A | 1 | 189pF @ 5V 1MHz | 2mA @ 40V | 530mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| SRP100D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-srp100ke373-datasheets-5714.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1.3V | 30A | 10μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 30A | 100 ns | 100 ns | Standard | 200V | 1A | 1A | 12pF @ 4V 1MHz | 10μA @ 200V | 1.3V @ 1A | -50°C~125°C | ||||||||||||||||||||||||||||||||||||||
| SRP100B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-srp100ke373-datasheets-5714.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 30A | 100 ns | 100 ns | Standard | 100V | 1A | 1A | 12pF @ 4V 1MHz | 10μA @ 100V | 1.3V @ 1A | -50°C~125°C | ||||||||||||||||||||||||||||||||||||||||
| RN 1Z | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-rn1zv-datasheets-2428.pdf | Axial | 2 | yes | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 100ns | Standard | 60A | 1 | 1.5A | 200V | 20μA @ 200V | 920mV @ 1.5A | 1.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SRP600A-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-srp600ke373-datasheets-5216.pdf | P600, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1.3V | 300A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 300A | 100 ns | 100 ns | Standard | 50V | 6A | 1 | 6A | 10μA @ 50V | 1.3V @ 6A | -50°C~125°C | ||||||||||||||||||||||||||||||||||||||
| RM 2CV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rm2cv-datasheets-8750.pdf | Axial | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 100A | 1 | 1.2A | 1000V | 10μA @ 1000V | 910mV @ 1.5A | 1.2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10SCD65K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 1999 | TO-220-2 | Lead Free | 2 | 22 Weeks | EAR99 | HIGH RELIABILITY, LOW LEAKAGE CURRENT, PD-CASE | 8541.10.00.80 | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 63W | 200μA | TO-220AC | 0 s | Silicon Carbide Schottky | 650V | 17A | 110A | 1 | 300pF @ 1V 1MHz | 650V | 200μA @ 650V | 1.8V @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| RG 1CV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rg1cv-datasheets-9281.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100ns | Standard | 0.7A | 1000V | 20μA @ 1000V | 3.3V @ 700mA | 700mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RU 2Z | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ru2zv-datasheets-8266.pdf | Axial | 2 | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 400ns | Standard | 20A | 1A | 200V | 10μA @ 200V | 1.5V @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-30WQ06FNTRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs30wq06fntrpbf-datasheets-9764.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30WQ06 | 3 | Common Anode | 10 | 1 | R-PSSO-G2 | 3.5A | 760mV | 490A | 2mA | CATHODE | HIGH POWER | 4.7 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2mA | 60V | 490A | TO-252AA | Schottky | 60V | 3.5A | 1 | 145pF @ 5V 1MHz | 2mA @ 60V | 610mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| RA 13V1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ra13v-datasheets-2400.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40A | 1 | 2A | 30V | 3mA @ 30V | 360mV @ 2A | 2A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-50WQ03FNTRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-vs50wq03fntrpbf-datasheets-9658.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 50WQ03 | 3 | Common Anode | 1 | Rectifier Diodes | 5.5A | 350mV | 320A | 3mA | CATHODE | HIGH POWER | 3 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 320A | 3mA | 30V | 320A | Schottky | 30V | 5.5A | 1 | 590pF @ 5V 1MHz | 3mA @ 30V | 460mV @ 5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| SS10PH10HM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-ss10ph9hm386a-datasheets-4106.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | AEC-Q101 | DUAL | FLAT | SS10PH10 | 3 | Common Anode | 1 | Rectifier Diodes | 10A | 880mV | 20A | CATHODE | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 200A | TO-277A | Schottky | 100V | 10A | 1 | 270pF @ 4V 1MHz | 10μA @ 100V | 880mV @ 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| RU 4A | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ru4a-datasheets-9775.pdf | Axial | 2 | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 400ns | Standard | 50A | 1 | 1.5A | 600V | 10μA @ 600V | 1.5V @ 3A | 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| RU 4M | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ru4m-datasheets-9778.pdf | Axial | 3 | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W3 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 10μA | 400ns | Standard | 70A | 1 | 2A | 400V | 10μA @ 400V | 1.3V @ 3.5A | 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| RS1PJHM3/85A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rs1pdm384a-datasheets-2346.pdf | DO-220AA | 27 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | 2 | Single | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 600V | 30A | 250 ns | Standard | 600V | 1A | 9pF @ 4V 1MHz | 1μA @ 600V | 1.3V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RX 10Z | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-rx10zv1-datasheets-8691.pdf | Axial | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 30ns | Standard | 30A | 1 | 2A | 200V | 50μA @ 200V | 980mV @ 2A | 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-30WQ10FNTRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs30wq10fntrpbf-datasheets-9704.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | e3 | MATTE TIN | SINGLE | GULL WING | 30WQ10 | 3 | Common Anode | 1 | R-PSSO-G2 | 3.5A | 960mV | 440A | 1mA | CATHODE | HIGH POWER | 4.7 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 100V | 440A | TO-252AA | Schottky | 100V | 3.5A | 1 | 92pF @ 5V 1MHz | 1mA @ 100V | 810mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| V12P10HM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-v12p10m386a-datasheets-5272.pdf | TO-277, 3-PowerDFN | Lead Free | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | V12P10 | 3 | Common Anode | 1 | Rectifier Diodes | 12A | 700mV | 200A | 250μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 100V | 200A | TO-277A | Schottky | 100V | 12A | 1 | 250μA @ 100V | 700mV @ 12A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| RU 4Z | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ru4z-datasheets-9829.pdf | Axial | 2 | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 400ns | Standard | 70A | 1 | 2A | 200V | 10μA @ 200V | 1.3V @ 3.5A | 3.5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| V8P10HM3/86A |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RU 4C | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ru4c-datasheets-9861.pdf | Axial | 2 | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 400ns | Standard | 50A | 1 | 1.5A | 1000V | 10μA @ 1000V | 1.6V @ 3A | 1.5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SS5P6HM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-ss5p6m386a-datasheets-7181.pdf | TO-277, 3-PowerDFN | Lead Free | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS5P6 | 3 | Common Anode | 1 | Rectifier Diodes | 5A | 690mV | 150A | 150μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 60V | 150A | TO-277A | Schottky | 60V | 5A | 1 | 5A | 200pF @ 4V 1MHz | 150μA @ 60V | 690mV @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| RJU60C3TDPP-EJ#T2 | Renesas Electronics America | $2.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rju60c3tdppejt2-datasheets-9872.pdf | TO-220-2 Full Pack | 2 | 16 Weeks | 2 | EAR99 | No | 8541.10.00.80 | 2 | Single | 1 | Rectifier Diodes | 10A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 90 ns | Standard | 600V | 10A | 1 | 1μA @ 600V | 2.1V @ 30A | 150°C Max |
