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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EK 06 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ek06v-datasheets-1661.pdf | Axial | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | Schottky | 10A | 0.7A | 0.1μs | 60V | 1mA @ 60V | 620mV @ 700mA | 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| EK 16 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ek16v1-datasheets-9587.pdf | Axial | 2 | yes | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | Schottky | 25A | 1 | 1.5A | 0.1μs | 60V | 1mA @ 60V | 620mV @ 1.5A | 1.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| 1N6629US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.4A | 1.7V | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY | 6.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 880V | 75A | 50 ns | Standard | 880V | 1.4A | 1 | 3A | 40pF @ 10V 1MHz | 2μA @ 880V | 1.4V @ 1.4A | -65°C~150°C | ||||||||||||||||||||||
| 1N4944 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Yes | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 400V | 15A | 150 ns | Standard | 400V | 1A | 35pF @ 12V 1MHz | 400V | 1μA @ 400V | 1.3V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| FMN-1056S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-fmn1056s-datasheets-9224.pdf | TO-220-2 Full Pack | -220F | Lead Free | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100ns | Standard | 600V | 5A | 60A | 1 | 5A | 50μA @ 600V | 1.3V @ 5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| FMB-G19L | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2012 | /files/sanken-fmbg19l-datasheets-9227.pdf | TO-220-2 Full Pack | -220F | 2 | 12 Weeks | yes | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 90V | 4A | 60A | 1 | 4A | 0.1μs | 5mA @ 90V | 810mV @ 4A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| 1N5182 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 7 Weeks | no | EAR99 | HIGH RELIABILITY | 8541.10.00.70 | e0 | TIN LEAD | NO | WIRE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 1.5W | 5000V | Standard | 0.1A | 5000V | 5μA @ 5000V | 10V @ 100mA | 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| EL 1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-el1v1-datasheets-5118.pdf | Axial | 2 | yes | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 50ns | Standard | 20A | 1 | 1.5A | 400V | 10μA @ 400V | 1.3V @ 1.5A | 1.5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| FMC-26UA | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2012 | /files/sanken-fmc26ua-datasheets-0010.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-XSFM-T2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | 4 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AC | 70 ns | Standard | 1.2kV | 3A | 50A | 1 | 3A | 1200V | 500μA @ 1200V | 4V @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| 1N5805 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5802-datasheets-0547.pdf | A, Axial | 2 | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125V | 1μA | 25ns | Standard | 35A | 1 | 2.5A | 25pF @ 10V 1MHz | 125V | 1μA @ 125V | 875mV @ 1A | 1A | -65°C~125°C | |||||||||||||||||||||||||||||||
| AK 06 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ak06v1-datasheets-5137.pdf | Axial | 2 | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | Schottky | 10A | 0.7A | 0.1μs | 60V | 1mA @ 60V | 620mV @ 700mA | 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| EK 14 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/sanken-ek14v1-datasheets-4173.pdf | Axial | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | Schottky | 40A | 1 | 1.5A | 0.2μs | 40V | 5mA @ 40V | 550mV @ 1.5A | 1.5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| SS210LHMHG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss24lrvg-datasheets-9409.pdf | DO-219AB | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 850mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6624US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1A | ISOLATED | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 50 ns | Standard | 990V | 1A | 1A | 10pF @ 10V 1MHz | 500nA @ 990V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||
| SS215LHMHG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss24lrvg-datasheets-9409.pdf | DO-219AB | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 950mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5820US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5822us-datasheets-5973.pdf | SQ-MELF, B | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | 3A | 700mV | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 20V | Schottky | 20V | 3A | 1 | 3A | 100μA @ 20V | 500mV @ 3A | -65°C~125°C | |||||||||||||||||||||||||||||
| SS26LHM2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss24lrvg-datasheets-9409.pdf | DO-219AB | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 400μA @ 60V | 700mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSFJL MHG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-rsfjlr3g-datasheets-8615.pdf | DO-219AB | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | Standard | 4pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 500mA | 500mA | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSFKL M2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-rsfjlr3g-datasheets-8615.pdf | DO-219AB | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | Standard | 4pF @ 4V 1MHz | 800V | 5μA @ 800V | 1.3V @ 500mA | 500mA | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS210LHM2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss24lrvg-datasheets-9409.pdf | DO-219AB | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 850mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1BL M2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s1alrvg-datasheets-7819.pdf | DO-219AB | Sub SMA | Standard Recovery >500ns, > 200mA (Io) | 1.8μs | Standard | 9pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1GLHRHG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s1alrvg-datasheets-7819.pdf | DO-219AB | Sub SMA | Standard Recovery >500ns, > 200mA (Io) | 1.8μs | Standard | 9pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4534UR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 1999 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5188 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 7 Weeks | no | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | NO | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250ns | Standard | 80A | 1 | 3A | 400V | 2μA @ 400V | 1.5V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| 1N5415US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | E-MELF | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 80A | 150 ns | Standard | 50V | 3A | 1 | 3A | 1μA @ 50V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||
| 1N6080US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6074us-datasheets-1204.pdf | SQ-MELF, G | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 12A | 1.5V | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 175A | 30 ns | Standard | 100V | 2A | 1 | 2A | 10μA @ 100V | 1.5V @ 37.7A | -65°C~155°C | ||||||||||||||||||||||||
| 1N648-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6481-datasheets-9193.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 400mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 500V | Standard | 500V | 400mA | 0.4A | 50nA @ 500V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||
| 1N6642U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6642u-datasheets-6254.pdf | SQ-MELF, D | Lead Free | 2 | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 75V | 2.5A | 0.5μA | 5 ns | Standard | 75V | 300mA | 0.3A | 500μA @ 75V | 800mV @ 10mA | -65°C~175°C | |||||||||||||||||||||||||
| 1N6631 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | A, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.4A | 1.95V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kV | 60A | 60 ns | Standard | 1.1kV | 1.4A | 1 | 40pF @ 10V 1MHz | 1100V | 4μA @ 1100V | 1.4V @ 1.4A | -65°C~150°C | |||||||||||||||||||||||||||
| S1JL MHG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s1alrvg-datasheets-7819.pdf | DO-219AB | Sub SMA | Standard Recovery >500ns, > 200mA (Io) | 1.8μs | Standard | 9pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | 1A | -55°C~175°C |
