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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RGP10M-7008E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10d5310m373-datasheets-2451.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS02(TE16L,HIT,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls02t6lclarq-datasheets-2716.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 420pF @ 10V 1MHz | 40V | 1mA @ 40V | 0.55V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS02(TE16L,SQC,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls02t6lclarq-datasheets-2716.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 420pF @ 10V 1MHz | 40V | 1mA @ 40V | 0.55V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS16-3HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss1461he3jah-datasheets-2696.pdf | DO-214AC, SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 200μA @ 60V | 750mV @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS03(TE16L,PCD,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls03te16rq-datasheets-2695.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 345pF @ 10V 1MHz | 60V | 1mA @ 60V | 0.58V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLH05,LMBJQ(O | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh05te16rq-datasheets-2687.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 200V | 10μA @ 200V | 0.98V @ 5A | 5A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGP10J-5025M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10d5310m373-datasheets-2451.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRB16H50-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he345-datasheets-2295.pdf | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | SILICON | 50V | TO-263AB | 0.62V | RECTIFIER DIODE | 150A | 1 | 16A | ||||||||||||||||||||||||||||||||
| RGP10M-7008M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10d5310m373-datasheets-2451.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PR1504S-A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-pr1504sa-datasheets-2732.pdf | DO-204AL, DO-41, Axial | 2 | no | EAR99 | not_compliant | 8541.10.00.80 | e3 | Bright Tin (Sn) | NO | WIRE | 260 | 2 | 150°C | 40 | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 150ns | Standard | 50A | 1 | 1.5A | 20pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.2V @ 1.5A | 1.5A | -65°C~150°C | ||||||||||||||||||||||||||
| CLS02(T6L,CANO-O,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls02t6lclarq-datasheets-2716.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 420pF @ 10V 1MHz | 40V | 1mA @ 40V | 0.55V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PR1502S-A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-pr1504sa-datasheets-2732.pdf | DO-204AL, DO-41, Axial | 2 | no | EAR99 | not_compliant | 8541.10.00.80 | e3 | Bright Tin (Sn) | NO | WIRE | 260 | 2 | 150°C | 40 | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 150ns | Standard | 50A | 1 | 1.5A | 20pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.2V @ 1.5A | 1.5A | -65°C~150°C | ||||||||||||||||||||||||||
| MBRB7H45-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | SILICON | 45V | TO-263AB | 0.55V | RECTIFIER DIODE | 150A | 1 | 7.5A | ||||||||||||||||||||||||||||||||
| APD160VHTR-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-apd160vhtrg1-datasheets-2737.pdf | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 680mV @ 1A | 1A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLH01(TE16L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh01te16rq-datasheets-2693.pdf | L-FLAT™ | 2 | No | Single | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 60A | 35 ns | Standard | 10μA @ 200V | 0.98V @ 3A | 3A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| RGP02-20E-805E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp0217em3s73-datasheets-2569.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLH07(TE16L,NMB,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh07te16lnmbq-datasheets-2704.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 400V | 10μA @ 400V | 1.8V @ 5A | 5A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APD160VHTR-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-apd160vhtrg1-datasheets-2737.pdf | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 680mV @ 1A | 1A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A6TA | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2012 | R6, Axial | 6 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 150pF @ 4V 1MHz | 600V | 10μA @ 600V | 950mV @ 6A | 6A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IDB10S60CATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-idb10s60catma2-datasheets-2743.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 8 Weeks | 3 | Halogen Free | Single | D2PAK | 10A | No Recovery Time > 500mA (Io) | 140μA | 600V | 76A | 0ns | Silicon Carbide Schottky | 480pF @ 1V 1MHz | 600V | 140μA @ 600V | 1.7V @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| MBRF10H35HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT APPLICABLE | 3 | 175°C | -65°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | EFFICIENCY | SILICON | 35V | TO-220AC | 0.55V | RECTIFIER DIODE | 150A | 1 | 10A | ||||||||||||||||||||||||||||||||
| MBRF10H45HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT APPLICABLE | 3 | 175°C | -65°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | EFFICIENCY | SILICON | 45V | TO-220AC | 0.55V | RECTIFIER DIODE | 150A | 1 | 10A | ||||||||||||||||||||||||||||||||
| CLS03,LNITTOQ(O | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls03te16rq-datasheets-2695.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 345pF @ 10V 1MHz | 60V | 1mA @ 60V | 0.58V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS23SHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss24se361t-datasheets-7469.pdf | DO-214AC, SMA | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | YES | DUAL | C BEND | 150°C | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 200μA | Schottky | 40A | 1 | 2A | 130pF @ 4V 1MHz | 30V | 200μA @ 30V | 550mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||
| CLS02(T6L,CLAR,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls02t6lclarq-datasheets-2716.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 420pF @ 10V 1MHz | 40V | 1mA @ 40V | 0.55V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RL102-N-2-1-BP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/microcommercialco-rl101n03ap-datasheets-2220.pdf | Axial, Radial Bend | Standard Recovery >500ns, > 200mA (Io) | Standard | 15pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS14-6HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss1461he3jah-datasheets-2696.pdf | DO-214AC, SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 200μA @ 40V | 500mV @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLH05(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh05te16rq-datasheets-2687.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 200V | 10μA @ 200V | 0.98V @ 5A | 5A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CLH02(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh02te16rq-datasheets-2688.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 300V | 10μA @ 300V | 1.3V @ 3A | 3A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRF1650HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrf1650he345-datasheets-2658.pdf | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT APPLICABLE | 3 | 150°C | -65°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | EFFICIENCY | SILICON | 50V | TO-220AC | 0.65V | RECTIFIER DIODE | 150A | 1 | 16A |
