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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Height | Width | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-T40HF20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vst40hf60-datasheets-7352.pdf | 40A | D-55 T-Module | 2 | 12 Weeks | Unknown | 55 | EAR99 | UL APPROVED | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PUFM-X2 | 40A | 1.3V | 600A | ISOLATED | HIGH VOLTAGE POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 15mA | 200V | 200V | Standard | 200V | 40A | 1 | 15mA @ 200V | |||||||||||||||||||||||||||||||||||||||
| 1N6081 | Semtech Corporation | $36.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 150°C | -65°C | RoHS Compliant | 2013 | Axial | 2 | 12 Weeks | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Rectifier Diodes | O-XALF-W2 | 12A | ISOLATED | SUPER FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 175A | 30 ns | Standard | 1 | 2A | 230pF @ 5V 1MHz | 10μA @ 150V | 970mV @ 5A | 5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N4148UBD | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n4148ubca-datasheets-8058.pdf | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | e4 | Gold (Au) - with Nickel (Ni) barrier | YES | 200°C | Single | Rectifier Diodes | 75V | 0.8V | RECTIFIER DIODE | 2A | 0.2A | 0.005μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-87HF120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard | 1.2kV | 85A | 1800A | 1 | 1200V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-87HFR120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard, Reverse Polarity | 1.2kV | 85A | 1800A | 1 | 1200V | 1.2V @ 267A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6628U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-jantx1n6628u-datasheets-6266.pdf | SQ-MELF, E | 2 | 2 | no | Lead, Tin | 8541.10.00.80 | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 4A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 75A | 30ns | Standard | 1 | 2A | 2μA @ 600V | 1.35V @ 2A | 1.75A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| VS-T70HF60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vst40hf60-datasheets-7352.pdf | 70A | D-55 T-Module | 2 | 12 Weeks | Unknown | 55 | EAR99 | UL APPROVED | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PUFM-X2 | 70A | 1.35V | 1.25kA | ISOLATED | HIGH VOLTAGE POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 15mA | 600V | 1.25kA | 600V | Standard | 600V | 70A | 1 | 15mA @ 600V | ||||||||||||||||||||||||||||||||||||||
| R2040 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Bulk | 200°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n1342c-datasheets-5803.pdf | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | Single | 16A | 10μA | 400V | 200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5802URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | YES | END | WRAP AROUND | 235 | 2 | 175°C | 20 | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 25ns | Standard | 1A | 25pF @ 10V 1MHz | 50V | 1μA @ 50V | 875mV @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| GATELEADMPWHPK1258XXPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 20 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JTX1N5553US | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | 1N5553 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6642UBD | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | 3-SMD, No Lead | 3 | 40 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | YES | DUAL | NOT SPECIFIED | 3 | 200°C | NOT SPECIFIED | 1 | Rectifier Diodes | Qualified | R-CDSO-N3 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 20ns | Standard | 2.5A | 0.3A | 75V | 500nA @ 75V | 1.2V @ 100mA | 300mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| JANTX1N6629 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.4A | 1.7V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 880V | 75A | 50 ns | Standard | 880V | 1.4A | 1 | 40pF @ 10V 1MHz | 2μA @ 880V | 1.4V @ 1.4A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| VS-T40HFL60S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2010 | /files/vishaysemiconductordiodesdivision-vst70hfl60s02-datasheets-1149.pdf | 40A | D-55 T-Module | 12 Weeks | Unknown | EAR99 | NOT APPLICABLE | Single | NOT APPLICABLE | 40A | 1.6V | 500A | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 600V | 600V | 200 ns | 200 ns | Standard | 600V | 40A | 100μA @ 600V | |||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5417US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 200V | 3A | 1 | 3A | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| JANTXV1N6076 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | E, Axial | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | NO | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-LALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30ns | Standard | 75A | 1 | 6A | 50V | 1μA @ 50V | 1.76V @ 18.8A | 1.3A | -65°C~155°C | ||||||||||||||||||||||||||||||||||||||||
| 189NQ135-1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2015 | HALF-PAK | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 4500pF @ 5V 1MHz | 135V | 4.5mA @ 135V | 1.07V @ 180A | 180A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6631US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | E-MELF | 2 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.4A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 1.1kV | 60ns | Standard | 1 | 2A | 40pF @ 10V 1MHz | 1100V | 4μA @ 1100V | 1.6V @ 1.4A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| JANTXV1N5811URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 150V | 5μA @ 150V | 875mV @ 4A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VS-122NQ030PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs122nq030pbf-datasheets-8141.pdf | D-67 HALF-PAK | 14 Weeks | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 7400pF @ 5V 1MHz | 30V | 10mA @ 30V | 570mV @ 120A | 120A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSI75-08B | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | AVALANCHE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsai7516b-datasheets-8519.pdf | DO-203AB, DO-5, Stud | 38.3mm | 17mm | 1 | 18 Weeks | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 110A | 1.17V | 1.4kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5kA | 6mA | 800V | 1.5kA | 800V | Standard | 800V | 110A | 1 | 6mA @ 800V | 1.17V @ 150A | -40°C~180°C | |||||||||||||||||||||||||||||||
| JANTX1N6078 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 14 Weeks | no | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | NO | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-LALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30ns | Standard | 75A | 1 | 6A | 150V | 5μA @ 150V | 1.76V @ 18.8A | 1.3A | -65°C~155°C | ||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5418US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 80A | 150 ns | Standard | 400V | 3A | 1 | 3A | 1μA @ 400V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| 182NQ030-1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | HALF-PAK | 6 Weeks | PRM1-1 (Half Pak Module) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 7700pF @ 5V 1MHz | 30V | 15mA @ 30V | 510mV @ 180A | 180A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6630US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, E | 2 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.4A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 50ns | Standard | 1 | 3A | 1000V | 2μA @ 1000V | 1.4V @ 1.4A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| JANTXV1N6629US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, E | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.4A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 880V | 60 ns | Standard | 800V | 1.4A | 1 | 3A | 40pF @ 10V 1MHz | 2μA @ 800V | 1.4V @ 1.4A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| FR85GR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | 85A | 1.369kA | Fast Recovery =< 500ns, > 200mA (Io) | 25μA | 400V | 400V | 500 ns | 500 ns | Standard, Reverse Polarity | 400V | 85A | 25μA @ 100V | 1.4V @ 85A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR85BR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 125°C | 1 | O-MUPM-D1 | 85A | 1.369kA | SINGLE | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 200 ns | 200 ns | Standard, Reverse Polarity | 100V | 85A | 1 | 25μA @ 100V | 1.4V @ 85A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||
| 180NQ035-1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | HALF-PAK | 6 Weeks | PRM1-1 (Half Pak Module) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 7700pF @ 5V 1MHz | 35V | 15mA @ 35V | 600mV @ 180A | 180A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-183NQ100PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs183nq100pbf-datasheets-8132.pdf | D-67 HALF-PAK | 1 | 14 Weeks | 2 | EAR99 | FREE WHEELING DIODE, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PUFM-X1 | 22kA | 4.5mA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | Schottky | 1 | 4150pF @ 5V 1MHz | 100V | 4.5mA @ 100V | 910mV @ 180A | 180A |
