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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Power Rating | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| MBR80100R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 80A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky, Reverse Polarity | 100V | 80A | 1 | 5mA @ 20V | 840mV @ 80A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B340A-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 125°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/diodesincorporated-b360a13f-datasheets-3389.pdf | 40V | 3A | DO-214AC, SMA | 250pF | 4.6mm | 2.3mm | 2.92mm | Contains Lead | 2 | 64.013223mg | 2 | no | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | Standard | DUAL | C BEND | B340 | 2 | Single | 1 | Not Qualified | 3A | 3A | 500mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.85W | 100A | 500μA | 40V | 80A | Schottky | 40V | 3A | 1 | 200pF @ 4V 1MHz | 500μA @ 40V | 500mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| BAT43W-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 125°C | -55°C | Non-RoHS Compliant | /files/diodesincorporated-bat42w7f-datasheets-9444.pdf | 30V | 200mA | SOD-123 | 10pF | 2.85mm | 1.25mm | 1.7mm | Contains Lead | 2 | 29.993795mg | 2 | EAR99 | FAST SWITCHING | unknown | 8541.10.00.70 | 200mW | e0 | Tin/Lead (Sn85Pb15) | Standard | 200mW | DUAL | GULL WING | 235 | BAT43W | 2 | Single | 10 | 1 | Not Qualified | 200mA | 200mA | 1V | Small Signal =< 200mA (Io), Any Speed | SILICON | 4A | 500nA | 30V | 4A | 5 ns | Schottky | 30V | 200mA | 10pF @ 1V 1MHz | 500nA @ 25V | 1V @ 200mA | 200mA DC | -55°C~125°C | ||||||||||||||||||||||||||||||||||||
| B360A-13 | Diodes Incorporated | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 125°C | -55°C | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/diodesincorporated-b360a13f-datasheets-3389.pdf | 60V | 3A | DO-214AC, SMA | 250pF | 4.6mm | 2.3mm | 2.92mm | Contains Lead | 2 | 64.013223mg | 2 | no | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | Standard | DUAL | C BEND | B360 | 2 | Single | 1 | Not Qualified | 3A | 3A | 700mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.85W | 100A | 500μA | 60V | 80A | Schottky | 60V | 3A | 1 | 200pF @ 4V 1MHz | 500μA @ 60V | 700mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| GATELEADWHBN661XXPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 20 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR8040R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 80A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky, Reverse Polarity | 40V | 80A | 1 | 1mA @ 35V | 750mV @ 80A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS2KA-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-rs2a13-datasheets-2885.pdf | 800V | 1.5A | DO-214AC, SMA | 30pF | 4.6mm | 2.1mm | 2.92mm | Contains Lead | 2 | 64.013223mg | 2 | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn85Pb15) | DUAL | C BEND | 235 | RS2K | 2 | Single | 10 | 1 | Not Qualified | 1.5A | 1.5A | 1.3V | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50A | 500 ns | 500 ns | Standard | 800V | 1.5A | 1 | 800V | 30pF @ 4V 1MHz | 5μA @ 800V | 1.3V @ 1.5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| JANTX1N6077 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | no | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | NO | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-LALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30ns | Standard | 75A | 1 | 6A | 100V | 5μA @ 100V | 1.76V @ 18.8A | 1.3A | -65°C~155°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DL4007-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | Non-RoHS Compliant | 2003 | /files/diodesincorporated-dl400113-datasheets-1525.pdf | 1kV | 1A | DO-213AB, MELF | 15pF | 5.2mm | 2.64mm | 2.64mm | Contains Lead | 2 | 249.986095mg | 2 | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 235 | DL4007 | 2 | Single | 10 | 1 | Rectifier Diodes | 1A | 1A | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 30A | Standard | 1kV | 1A | 1kV | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.1V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| MBR8020R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cable, Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbr8020r-datasheets-6180.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 13 | Straight | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 80A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky, Reverse Polarity | 20V | 80A | 1 | 1mA @ 20V | 750mV @ 80A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ES2BA-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/diodesincorporated-es2aa13-datasheets-7857.pdf | 100V | 2A | DO-214AC, SMA | 25pF | 4.6mm | 2.1mm | 2.92mm | Contains Lead | 2 | 64.013223mg | 2 | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | DUAL | C BEND | 235 | ES2B | 2 | Single | 10 | 1 | Not Qualified | 2A | 2A | 920mV | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50A | 25 ns | 25 ns | Standard | 100V | 2A | 1 | 100V | 25pF @ 4V 1MHz | 5μA @ 100V | 920mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| VS-40HFL80S05M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | FREE WHEELING DIODE | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | FAST RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Standard | 800V | 40A | 420A | 1 | 0.5μs | 800V | 1.3V @ 125A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAV20W-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/diodesincorporated-bav21w7f-datasheets-7922.pdf | 150V | 400mA | SOD-123 | 5pF | 2.85mm | 1.25mm | 1.7mm | Contains Lead | 2 | 200.998119mg | 2 | EAR99 | not_compliant | 8541.10.00.70 | 250mW | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 235 | BAV20W | 2 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | 200mA | 200mA | 1.25V | 2.5A | Small Signal =< 200mA (Io), Any Speed | SILICON | 15μA | 2.5A | 50 ns | 50 ns | Standard | 150V | 200mA | 5pF @ 0V 1MHz | 100nA @ 150V | 1.25V @ 200mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| VS-HFA90NH40PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Surface Mount | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa90nh40pbf-datasheets-7938.pdf | D-67 HALF-PAK | 14 Weeks | Single | HALF-PAK | 600A | Fast Recovery =< 500ns, > 200mA (Io) | 2mA | 400V | 140ns | 140 ns | Standard | 400V | 2mA @ 400V | 1.67V @ 180A | 210A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8TQ100STRL | Vishay Semiconductor Diodes Division | $1.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-8tq080strr-datasheets-7547.pdf | 100V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 500pF | Contains Lead | 2 | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | 8541.10.00.80 | Standard | GULL WING | 225 | 8TQ100 | 4 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | 880mV | 850A | 550μA | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 850A | Schottky | 100V | 8A | 1 | 550μA @ 100V | 720mV @ 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| GATELEAD1110008XPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS40-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-bas40047f-datasheets-6746.pdf | TO-236-3, SC-59, SOT-23-3 | 5pF | 3.05mm | 1mm | 1.4mm | Contains Lead | 3 | 200.998119mg | 3 | no | EAR99 | not_compliant | 8541.10.00.70 | 350mW | e0 | Tin/Lead (Sn85Pb15) | Standard | 350mW | DUAL | GULL WING | 235 | BAS40 | 3 | Single | 10 | 1 | Not Qualified | 200mA | 200mA | 1V | Small Signal =< 200mA (Io), Any Speed | SILICON | 600mA | 200nA | 40V | 600mA | 5 ns | Schottky | 40V | 200mA | 5pF @ 0V 1MHz | 200nA @ 30V | 1V @ 40mA | 200mA DC | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||
| GATELEADWHBK750XXPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 20 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6626 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 75A | 30 ns | Standard | 220V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 220V | 1.35V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 125SPC015A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | SPD-3A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 7200pF @ 5V 1MHz | 15V | 40mA @ 15V | 410mV @ 120A | 120A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFL100S05M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | FREE WHEELING DIODE | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | FAST RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Standard | 1kV | 40A | 420A | 1 | 0.5μs | 1000V | 1.95V @ 125.6A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA35-16A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsi3512a-datasheets-3486.pdf | DO-203AB, DO-5, Stud | Lead Free | 1 | 8 Weeks | No SVHC | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 1.55V | 650A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4mA | 1.6kV | 690A | 1.6kV | Avalanche | 1.6kV | 49A | 1 | 1600V | 4mA @ 1600V | 1.55V @ 150A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GATELEADWHRD394XXPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 20 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6076 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 14 Weeks | no | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | NO | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-LALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30ns | Standard | 75A | 1 | 6A | 50V | 5μA @ 50V | 1.76V @ 18.8A | 1.3A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES3DB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-es3ab13-datasheets-7865.pdf | 200V | 3A | DO-214AA, SMB | 45pF | 4.57mm | 2.42mm | 3.94mm | Contains Lead | 2 | 179.991122mg | 2 | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn85Pb15) | DUAL | C BEND | 235 | ES3D | 2 | Single | 10 | 1 | Not Qualified | 3A | 3A | 900mV | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100A | 25 ns | 25 ns | Standard | 200V | 3A | 1 | 200V | 45pF @ 4V 1MHz | 10μA @ 200V | 900mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| GATELEADWHRD762XPSA1 | Infineon Technologies | $25.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 20 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDC20S120C5X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | Die | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES3CB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-es3ab13-datasheets-7865.pdf | 150V | 3A | DO-214AA, SMB | 45pF | 4.57mm | 2.42mm | 3.94mm | Contains Lead | 2 | 179.991122mg | 2 | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn85Pb15) | DUAL | C BEND | 235 | ES3C | 2 | Single | 10 | 1 | Not Qualified | 3A | 3A | 900mV | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100A | 25 ns | 25 ns | Standard | 150V | 3A | 1 | 150V | 45pF @ 4V 1MHz | 10μA @ 150V | 900mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| ES3BB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | Non-RoHS Compliant | 2010 | /files/diodesincorporated-es3ab13-datasheets-7865.pdf | 100V | 3A | DO-214AA, SMB | 45pF | 4.57mm | 2.42mm | 3.94mm | Contains Lead | 2 | 92.986436mg | 2 | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn85Pb15) | DUAL | C BEND | 235 | ES3B | 2 | Single | 10 | 1 | Not Qualified | 3A | 3A | 900mV | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100A | 25 ns | 25 ns | Standard | 100V | 3A | 1 | 100V | 45pF @ 4V 1MHz | 10μA @ 100V | 900mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| DNA120E2200KO | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | ISOPLUS264™ | 28 Weeks | NOT SPECIFIED | NOT SPECIFIED | Standard Recovery >500ns, > 200mA (Io) | Standard | 88pF @ 700V 1MHz | 2200V | 100μA @ 2200V | 1.31V @ 120A | 120A | -55°C~175°C |
