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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-8ETH03-1HM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8eth03shm3-datasheets-3988.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14 Weeks | TO-262AA | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 300V | 20μA @ 300V | 1.25V @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMSH3-60M BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmsh360mtr13pbfree-datasheets-6457.pdf | DO-214AA, SMB | 26 Weeks | compliant | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 60V | Schottky | 80A | 3A | 121pF @ 4V 1MHz | 60V | 500μA @ 60V | 700mV @ 3A | 3A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30WQ04FNHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30wq04fntrlhm3-datasheets-4582.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 150°C | 10 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2000μA | TO-252AA | Schottky | 40V | 3.5A | 80A | 1 | 189pF @ 5V 1MHz | 40V | 2mA @ 40V | 530mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| IDK02G65C5XTMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idk02g65c5xtma2-datasheets-4613.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY, PD-CASE | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 36W | 650V | 330μA | 0ns | Silicon Carbide Schottky | 1 | 70pF @ 1V 1MHz | 650V | 330μA @ 650V | 1.8V @ 2A | 2A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| VS-30WQ04FNTRRHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30wq04fntrlhm3-datasheets-4582.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 150°C | 10 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2000μA | TO-252AA | Schottky | 40V | 3.5A | 80A | 1 | 189pF @ 5V 1MHz | 40V | 2mA @ 40V | 530mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| VI20120SG-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vb20120sge34w-datasheets-3434.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | 20A | 150A | 250μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 120V | 150A | Schottky | 120V | 20A | 1 | 250μA @ 120V | 1.33V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||
| HSM540JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | 24 Weeks | No | HSM540 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFS1608GHMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfs1601gmng-datasheets-3552.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 8A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MPL-1036SVR | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/sanken-mpl1036svr-datasheets-4628.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | Standard | 600V | 3A | 600V | 50μA @ 600V | 1.75V @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMR3U-10 BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmr3u01tr13pbfree-datasheets-3567.pdf | DO-214AB, SMC | 12 Weeks | compliant | YES | 175°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 1000V | 100ns | Standard | 150A | 3A | 1000V | 5μA @ 1000V | 1.7V @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30WQ06FNTRLHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30wq06fnhm3-datasheets-7535.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 150°C | 10 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2000μA | TO-252AA | Schottky | 60V | 3.5A | 70A | 1 | 145pF @ 5V 1MHz | 60V | 2mA @ 60V | 610mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| UG8HT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ugf8jte345-datasheets-7304.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | 8A | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 100A | 500V | 50 ns | 50 ns | Standard | 500V | 8A | 1 | 8A | 30μA @ 500V | 1.75V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||
| VI30100S-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v30100sm34w-datasheets-7373.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 100V | 250A | Schottky | 100V | 30A | 1 | 1mA @ 100V | 910mV @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| DMA10P1600UZ-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 75W | 1600V | 5μA | TO-252AA | Standard | 92A | 1 | 10A | 1pF @ 400V 1MHz | 1600V | 5μA @ 1600V | 1.55V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| HSM580JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-hsm590je3tr13-datasheets-3681.pdf | DO-214AB, SMC | 2 | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | DUAL | J BEND | HSM580 | 2 | Single | 1 | 5A | 800mV | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 80V | 200A | Schottky | 80V | 5A | 1 | 5A | 250μA @ 80V | 800mV @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||
| STPS30S45CW | STMicroelectronics | $1.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 8 Weeks | STPS30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMXA-1054S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-fmxa1054s-datasheets-4574.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | yes | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20 ns | Standard | 400V | 5A | 50A | 1 | 5A | 400V | 50μA @ 400V | 1.5V @ 5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| UGB8CTHE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug8dte345-datasheets-6827.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | UGB8C | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 150A | 30 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||
| VB30100SG-M3/8W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vb30100sgm38w-datasheets-4576.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350μA | Schottky | 100V | 30A | 250A | 1 | 100V | 350μA @ 100V | 1V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VBT2080S-M3/8W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vbt2080sm34w-datasheets-3881.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | Schottky | 80V | 20A | 150A | 1 | 80V | 700μA @ 80V | 920mV @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| VS-20TQ035S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs20tq045sm3-datasheets-5894.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 150°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2700μA | Schottky | 35V | 20A | 400A | 1 | 1400pF @ 5V 1MHz | 35V | 2.7mA @ 35V | 570mV @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| VS-30WQ04FNTRLHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30wq04fntrlhm3-datasheets-4582.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 150°C | 10 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2000μA | TO-252AA | Schottky | 40V | 3.5A | 80A | 1 | 189pF @ 5V 1MHz | 40V | 2mA @ 40V | 530mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| UGB8BTHE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug8dte345-datasheets-6827.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | UGB8B | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 150A | 30 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||
| UG8JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-ugf8jte345-datasheets-7304.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 100A | 600V | 50 ns | 50 ns | Standard | 600V | 8A | 1 | 8A | 30μA @ 600V | 1.75V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||
| TST30H100CW C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tst30h200cwc0g-datasheets-7943.pdf | TO-220-3 | 14 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 250μA @ 100V | 780mV @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPS615E3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ups615e3tr13-datasheets-4594.pdf | DO-216AA | 2 | 19 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | GULL WING | Single | 1 | R-PSSO-G2 | 6A | 320mV | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4mA | 15V | 300A | Schottky | 15V | 6A | 1 | 6A | 4mA @ 15V | 320mV @ 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| VI30120S-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vb30120sm38w-datasheets-3876.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 120V | 300A | Schottky | 120V | 30A | 1 | 500μA @ 120V | 1.1V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| FESB8HT-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 27 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 500V | 125A | 500V | 50 ns | 50 ns | Standard | 500V | 8A | 1 | 8A | 10μA @ 500V | 1.5V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||
| UFS170JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs180je3tr13-datasheets-4544.pdf | DO-214BA | 20 Weeks | No | DO-214BA | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | Standard | 700V | 1A | 700V | 20μA @ 700V | 1.2V @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-STPS20L15G-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vsstps20l15glm3-datasheets-4192.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | unknown | SINGLE | GULL WING | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10000μA | Schottky | 15V | 20A | 330A | 1 | 2000pF @ 5V 1MHz | 15V | 10mA @ 15V | 410mV @ 19A | -40°C~150°C |
