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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RGP02-14E-E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp0220ee354-datasheets-6870.pdf | DO-204AL, DO-41, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | SNUBBER DIODE | No | 8541.10.00.70 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1.4kV | 20A | 1.4kV | 300 ns | 300 ns | Standard | 1.4kV | 500mA | 0.5A | 1400V | 5μA @ 1400V | 1.8V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||
| SBR8B60P5-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr8b60p57d-datasheets-8344.pdf | PowerDI™ 5 | 3 | 15 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 220μA | Super Barrier | 60V | 5A | 170A | 1 | 5A | 60V | 220μA @ 60V | 600mV @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| 6A80GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 800V | 10μA @ 800V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT53G-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-byt53atr-datasheets-4713.pdf | 1.9A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 1.9A | 1.1V | 50A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 50 ns | 50 ns | Avalanche | 400V | 1.9A | 1 | 5μA @ 400V | 1.1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||
| S5K-E3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-s5me357t-datasheets-1264.pdf | DO-214AB, SMC | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | S5K | 2 | Single | 30 | 1 | Rectifier Diodes | 5A | 1.15V | 100A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 100A | 800V | 2.5 μs | 2.5 μs | Standard | 800V | 5A | 1 | 5A | 40pF @ 4V 1MHz | 10μA @ 800V | 1.15V @ 5A | -55°C~150°C | |||||||||||||||||||||||
| 6A40GHR0G | Taiwan Semiconductor Corporation | $0.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A05GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 50V | 10μA @ 50V | 1.1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BY203-12STR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by20320str-datasheets-6172.pdf | 250A | SOD-57, Axial | 12 Weeks | 2 | Silver, Tin | No | Single | SOD-57 | 250mA | 2.4V | 20A | Fast Recovery =< 500ns, > 200mA (Io) | 2μA | 1.2kV | 20A | 1.2kV | 300 ns | 300 ns | Avalanche | 1.2kV | 250mA | 1200V | 2μA @ 700V | 2.4V @ 200mA | 250mA DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SBR3U60P5-7D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | AVALANCHE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr5e60p513-datasheets-0411.pdf | PowerDI™ 5 | 3 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 60μA | Super Barrier | 60V | 3A | 80A | 1 | 3A | 110pF @ 4V 1MHz | 60V | 60μA @ 60V | 600mV @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||
| S5DHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s5me357t-datasheets-1264.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | C BEND | 260 | S5D | 150°C | 30 | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 200V | 5A | 100A | 1 | 5A | 40pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.15V @ 5A | -55°C~150°C | |||||||||||||||||||||||||||||
| EGF1A-E3/5CA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-egf1de367a-datasheets-1309.pdf | DO-214BA | 2 | 16 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 250 | EGF1A | 2 | Single | 30 | 1 | Rectifier Diodes | 1A | 30A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 50 ns | 50 ns | Standard | 50V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 50V | 1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||
| SJPB-D6VL | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/sanken-sjpbd6vr-datasheets-8872.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 1A | 60V | 100μA @ 60V | 680mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A40GHB0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGF1CHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egf1de367a-datasheets-1309.pdf | DO-214BA | DO-214BA (GF1) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 15pF @ 4V 1MHz | 150V | 1μA @ 150V | 1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF37GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf34ga0g-datasheets-1689.pdf | DO-201AD, Axial | 10 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 500V | 5μA @ 500V | 1.7V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A20GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 200V | 10μA @ 200V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS10I40A(TE12L,QM | Toshiba Semiconductor and Storage | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOD-128 | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 62pF @ 10V 1MHz | 40V | 100μA @ 40V | 450mV @ 1A | 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPA-D3 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-sjpad3vr-datasheets-8556.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 30V | 1A | 1A | 30V | 1.5mA @ 30V | 360mV @ 1A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||
| UG54GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | 14 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 200V | 10μA @ 200V | 1.05V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPJ-D3 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-sjpjd3vr-datasheets-9638.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 30V | 1A | 1A | 30V | 100μA @ 30V | 450mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| SS5P10-E3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-ss5p10m386a-datasheets-7142.pdf | TO-277, 3-PowerDFN | Lead Free | 15 Weeks | Standard | SS5P10 | Common Cathode | TO-277A (SMPC) | 5A | 150A | 15μA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 5A | 100V | 15μA @ 100V | 880mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| SJPM-H4V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-sjpmh4vr-datasheets-9594.pdf | 2-SMD, J-Lead | 12 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 400V | 2A | 400V | 10μA @ 400V | 1.1V @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPB-D4 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-sjpbd4vr-datasheets-8934.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40V | 1A | 1A | 40V | 100μA @ 40V | 550mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| SF4003-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf4007tr-datasheets-5869.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 50 ns | 50 ns | Avalanche | 200V | 1A | 1A | 5μA @ 200V | 1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||
| 6A80GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 800V | 10μA @ 800V | 1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S5KHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s5me357t-datasheets-1264.pdf | DO-214AB, SMC | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | C BEND | 260 | S5K | 150°C | 30 | 1 | Rectifier Diodes | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 800V | 5A | 100A | 1 | 5A | 40pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.15V @ 5A | -55°C~150°C | |||||||||||||||||||||||||||||
| BYT53G-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-byt53atr-datasheets-4713.pdf | 1.9A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 1.9A | 1.1V | 50A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 50 ns | 50 ns | Avalanche | 400V | 1.9A | 1 | 5μA @ 400V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||
| 6A100GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGF1CHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egf1de367a-datasheets-1309.pdf | DO-214BA | DO-214BA (GF1) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 15pF @ 4V 1MHz | 150V | 1μA @ 150V | 1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A60GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 600V | 10μA @ 600V | 1V @ 6A | 6A | -55°C~150°C |
