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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 1N5400GP-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/microcommercialco-1n5408gptp-datasheets-2670.pdf | DO-201AD, Axial | 2 | 12 Weeks | yes | EAR99 | LOW LEAKAGE CURRENT | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50V | Standard | 200A | 1 | 3A | 40pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.1V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VSSB3L6S-M3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vssb3l6sm35bt-datasheets-0923.pdf | DO-214AA, SMB | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 3A | 590mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.2mA | 60V | 80A | Schottky | 60V | 2.6A | 1 | 358pF @ 4V 1MHz | 1.2mA @ 60V | 590mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| SK35BHM4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk34br5g-datasheets-0769.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 50V | 500μA @ 50V | 750mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB250-E3/73 | Vishay Semiconductor Diodes Division | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sb240e354-datasheets-0894.pdf | DO-204AL, DO-41, Axial | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | 2 | 150°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 50V | 2A | 60A | 1 | 2A | 50V | 500μA @ 60V | 680mV @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| ACGRBT304-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/comchiptechnology-acgrbt302hf-datasheets-8178.pdf | 2-SMD, No Lead | 2 | 12 Weeks | yes | DUAL | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-N2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | Standard | 800V | 3A | 95A | 1 | 3A | 23pF @ 4V 1MHz | 800V | 5μA @ 200V | 1V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| S4PG-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s4pjm386a-datasheets-0490.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | S4PG | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | 100A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 100A | 400V | TO-277A | 2.5 μs | 2.5 μs | Standard | 400V | 4A | 1 | 4A | 30pF @ 4V 1MHz | 10μA @ 400V | 1.1V @ 4A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| BYG22A-M3/TR3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg22de3tr-datasheets-0872.pdf | DO-214AC, SMA | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25 ns | Avalanche | 50V | 2A | 35A | 1 | 2A | 50V | 1μA @ 50V | 1.1V @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| EU 2V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-eu2-datasheets-4690.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400ns | Standard | 1A | 400V | 10μA @ 400V | 1.4V @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UG2B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug2de373-datasheets-4253.pdf | DO-204AC, DO-15, Axial | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 80A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 80A | 100V | 25 ns | 15 ns | Standard | 100V | 2A | 1 | 2A | 5μA @ 100V | 950mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| S4PB-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s4pjm386a-datasheets-0490.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | S4PB | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | 100A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100A | 100V | TO-277A | 2.5 μs | 2.5 μs | Standard | 100V | 4A | 1 | 4A | 30pF @ 4V 1MHz | 10μA @ 100V | 1.1V @ 4A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| SR505 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr506a0g-datasheets-0793.pdf | DO-201AD, Axial | 2 | 9 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | PURE TIN | AEC-Q101 | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 100μA | Schottky | 120A | 1 | 5A | 50V | 500μA @ 50V | 700mV @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SR504 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr506a0g-datasheets-0793.pdf | DO-201AD, Axial | 2 | 9 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | PURE TIN | AEC-Q101 | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | 500μA | Schottky | 120A | 1 | 5A | 40V | 500μA @ 40V | 550mV @ 5A | 5A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-2EJH01HM3/6A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs2ejh01hm36b-datasheets-7306.pdf | DO-221AC, SMA Flat Leads | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | unknown | 8541.10.00.80 | e3 | Tin (Sn) | AEC-Q101 | DUAL | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 25 ns | Standard | 100V | 2A | 65A | 1 | 2A | 100V | 2μA @ 100V | 930mV @ 2A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| S4PJ-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s4pjm386a-datasheets-0490.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | S4PJ | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | 1.1V | 100A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 100A | 600V | TO-277A | 2.5 μs | 2.5 μs | Standard | 600V | 4A | 1 | 4A | 30pF @ 4V 1MHz | 10μA @ 600V | 1.1V @ 4A | -55°C~150°C | |||||||||||||||||||||||||||||||
| EU 1V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-eu1-datasheets-4722.pdf | Axial | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | Standard | 400V | 10μA @ 400V | 2.5V @ 250mA | 250mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SDT10A45P5-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerDI™ 5 | 3 | 23 Weeks | FREE WHEELING DIODE | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 150°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 300μA | Schottky | 180A | 1 | 10A | 45V | 300μA @ 45V | 470mV @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SDT10A45P5-7D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerDI™ 5 | 3 | 23 Weeks | FREE WHEELING DIODE | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 150°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 300μA | Schottky | 180A | 1 | 10A | 45V | 300μA @ 45V | 470mV @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SR504 B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr506a0g-datasheets-0793.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 5A | 5A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK34BHM4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk34br5g-datasheets-0769.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 500mV @ 3A | 3A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBR02U100LPQ-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | AVALANCHE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr02u100lpq7-datasheets-8546.pdf | 0402 (1006 Metric) | 2 | 12 Weeks | 2 | EAR99 | HIGH RELIABILITY | 8541.10.00.70 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | NO LEAD | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Super Barrier | 100V | 250mA | 100V | 1μA @ 75V | 800mV @ 200mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UG2C-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-ug2de373-datasheets-4253.pdf | DO-204AC, DO-15, Axial | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 80A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 80A | 150V | 25 ns | 15 ns | Standard | 150V | 2A | 1 | 2A | 5μA @ 150V | 950mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| ESH1BHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-esh1be361t-datasheets-4197.pdf | DO-214AC, SMA | 11 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 25pF @ 4V 1MHz | 100V | 1μA @ 100V | 900mV @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMF01(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2009 | SOD-128 | 2 | 12 Weeks | 2 | Silver, Tin | No | DUAL | FLAT | Single | 1 | 2A | 1.4V | 30A | VERY FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 600V | 30A | 100 ns | 100 ns | Standard | 600V | 2A | 1 | 2A | 50μA @ 600V | 2V @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| UG2A-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug2de373-datasheets-4253.pdf | DO-204AC, DO-15, Axial | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 80A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 80A | 50V | 25 ns | 15 ns | Standard | 50V | 2A | 1 | 2A | 5μA @ 50V | 950mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| MURS240-E3/5BT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-murs240e352t-datasheets-5041.pdf | DO-214AA, SMB | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | MURS240 | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 1.45V | 35A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 35A | 400V | 75 ns | 75 ns | Standard | 400V | 2A | 1 | 2A | 5μA @ 400V | 1.45V @ 2A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| RS3K R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | Standard | 800V | 10μA @ 800V | 1.3V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S3JHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 11 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 2.5μs | Standard | 60pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.15V @ 2.5A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UG2G-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug2ge354-datasheets-0953.pdf | DO-204AC, DO-15, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 2A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 50A | 25 ns | Standard | 400V | 2A | 1 | 2A | 5μA @ 400V | 950mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| S4PD-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s4pjm386a-datasheets-0490.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | S4PD | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | 100A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | 200V | TO-277A | 2.5 μs | 2.5 μs | Standard | 200V | 4A | 1 | 4A | 30pF @ 4V 1MHz | 10μA @ 200V | 1.1V @ 4A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| SB330 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-sb3100-datasheets-6316.pdf | 30V | 3A | DO-201AD, Axial | Lead Free | 2 | 13 Weeks | 360mg | No SVHC | 2 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | Standard | WIRE | SB330 | Single | 1 | Rectifier Diodes | 3A | 3A | 500mV | 80A | 500μA | ISOLATED | GENERAL PURPOSE | 40 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3.6W | 80A | 500μA | 30V | 80A | Schottky | 30V | 3A | 1 | 180pF @ 4V 1MHz | 500μA @ 30V | 500mV @ 3A | -65°C~125°C |
