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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| SBRT15M50AP5-13D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchSBR | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/diodesincorporated-sbrt15m50ap513d-datasheets-9327.pdf | PowerDI™ 5 | 3 | 24 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 150μA | Super Barrier | 50V | 15A | 290A | 1 | 50V | 150μA @ 50V | 540mV @ 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| NRVTS12100EMFST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nrvts12100emfst1g-datasheets-1861.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 7 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-F5 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 55μA | Schottky | 100V | 12A | 200A | 1 | 100V | 55μA @ 100V | 730mV @ 12A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| AS1PDHM3/85A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as1pjm384a-datasheets-1084.pdf | DO-220AA | 10 Weeks | 2 | Tin | No | AS1PD | Single | DO-220AA (SMP) | 1.5A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 200V | 30A | 1.5μs | Avalanche | 200V | 1.5A | 10.4pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.15V @ 1.5A | 1.5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| V15PM12-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15pm12m3i-datasheets-9287.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 120V | 800μA @ 120V | 840mV @ 15A | 15A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SDURF2060 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | TO-220-2 Full Pack, Isolated Tab | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 5μA @ 600V | 2V @ 20A | 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVTS12120MFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nrvts12120mfst3g-datasheets-8376.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 150°C | 1 | R-PDSO-F5 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75μA | Schottky | 120V | 12A | 200A | 1 | 120V | 75μA @ 120V | 830mV @ 12A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SK810CHM6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 500μA @ 100V | 900mV @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVTS8H120EMFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nrvts8h120emfst1g-datasheets-9292.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | yes | not_compliant | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 120V | 50μA @ 120V | 765mV @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SDT12A120P5-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-sdt12a120p513-datasheets-9293.pdf | PowerDI™ 5 | 3 | 14 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120V | 500μA | Schottky | 300A | 1 | 12A | 120V | 500μA @ 120V | 800mV @ 12A | 12A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| RU 2CV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ru2cv1-datasheets-0773.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400ns | Standard | 0.8A | 1000V | 10μA @ 1000V | 1.5V @ 1A | 800mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| RG 10V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rg10v-datasheets-9298.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100ns | Standard | 50A | 1 | 1.2A | 400V | 500μA @ 400V | 1.8V @ 1.5A | 1.2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| P600B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-p600je354-datasheets-7002.pdf | P600, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 22A | 1.3V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 400A | 2.5 μs | Standard | 100V | 6A | 1 | 6A | 150pF @ 4V 1MHz | 5μA @ 100V | 900mV @ 6A | -50°C~150°C | ||||||||||||||||||||||||||||||
| AU2PM-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au2pmm386a-datasheets-0184.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AU2PM | 3 | Common Anode | 1 | Rectifier Diodes | 2A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 30A | TO-277A | 75 ns | Avalanche | 1kV | 1.3A | 1 | 29pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 2.5V @ 2A | 1.3A DC | -55°C~175°C | |||||||||||||||||||||||||||||||
| SF68G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf68ga0g-datasheets-7049.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 5μA | 35ns | Standard | 150A | 1 | 6A | 50pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| SSL34 R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 410mV @ 3A | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB530-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2000 | /files/diodesincorporated-sb560t-datasheets-8873.pdf | DO-201AD, Axial | 9.5mm | 5.3mm | 5.3mm | 2 | 19 Weeks | 1.09999g | 2 | no | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 260 | SB530 | 2 | Single | 40 | 1 | Rectifier Diodes | 5A | 550mV | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 500μA | 30V | 150A | Schottky | 30V | 5A | 1 | 5A | 500μA @ 30V | 550mV @ 5A | -65°C~125°C | |||||||||||||||||||||||||||
| SS320HR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 200V | 100μA @ 200V | 850mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AU2PK-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au2pmm386a-datasheets-0184.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AU2PK | 3 | Common Anode | 1 | Rectifier Diodes | 2A | 2.5V | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 30A | TO-277A | 75 ns | Avalanche | 800V | 1.3A | 1 | 29pF @ 4V 1MHz | 10μA @ 800V | 2.5V @ 2A | 1.3A DC | -55°C~175°C | |||||||||||||||||||||||||||||||
| RG 1CV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rg1cv-datasheets-9281.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100ns | Standard | 0.7A | 1000V | 20μA @ 1000V | 3.3V @ 700mA | 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| V12PM6-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12pm6m3h-datasheets-5507.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2050pF @ 4V 1MHz | 60V | 1mA @ 60V | 640mV @ 12A | 12A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RD 2AV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | /files/sanken-rd2av-datasheets-9239.pdf | Axial | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 10μA @ 600V | 1.55V @ 1.2A | 1.2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBRD320TRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbrd320trlm3-datasheets-8879.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 3A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 20V | 490A | TO-252AA | Schottky | 20V | 3A | 1 | 3A | 189pF @ 5V 1MHz | 200μA @ 20V | 600mV @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||
| 25TQ015STR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2000pF @ 5V 1MHz | 15V | 15mA @ 15V | 450mV @ 25A | 25A | -55°C~100°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR4L40 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur4l60r0g-datasheets-9174.pdf | DO-201AD, Axial | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 65pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.28V @ 4A | 4A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF67G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sf68ga0g-datasheets-7049.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 5μA | 35ns | Standard | 150A | 1 | 6A | 50pF @ 4V 1MHz | 500V | 5μA @ 500V | 1.7V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| MURS340-E3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-murs360e357t-datasheets-7025.pdf | DO-214AB, SMC | 2 | 21 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | MURS340 | 2 | Single | 30 | 1 | Rectifier Diodes | 4A | 1.28V | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 125A | 400V | 75 ns | 75 ns | Standard | 400V | 3A | 1 | 4A | 10μA @ 400V | 1.25V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||
| MUR4L60 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur4l60r0g-datasheets-9174.pdf | DO-201AD, Axial | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 65pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.28V @ 4A | 4A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR440 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur460a0g-datasheets-1971.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 10μA | 50ns | Standard | 125A | 1 | 4A | 65pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.28V @ 4A | 4A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| MUR4L40 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur4l60r0g-datasheets-9174.pdf | DO-201AD, Axial | 10 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 65pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.28V @ 4A | 4A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS15(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshiba-cms15te12lqm-datasheets-6968.pdf | SOD-128 | 12 Weeks | 2 | Single | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300μA | 60V | 60A | Schottky | 102pF @ 10V 1MHz | 300μA @ 60V | 580mV @ 3A | -40°C~150°C |
