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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR1060HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr1060c0g-datasheets-6211.pdf | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 100μA @ 60V | 800mV @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7100 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr7150hc0g-datasheets-2988.pdf | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 920mV @ 7.5A | 7.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR735 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr7150hc0g-datasheets-2988.pdf | TO-220-2 | 2 | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 150°C | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35V | 100μA | TO-220AC | Schottky | 150A | 1 | 7.5A | 35V | 100μA @ 35V | 840mV @ 15A | 7.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| MBR760HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr7150hc0g-datasheets-2988.pdf | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 100μA @ 60V | 750mV @ 7.5A | 7.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SX073H045S4PT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | HIGH RELIABILITY | 8541.10.00.40 | YES | UPPER | NO LEAD | 175°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | Schottky | 1 | 45V | 50μA @ 45V | 630mV @ 7.5A | 7.5A DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| MBR1050HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr1060c0g-datasheets-6211.pdf | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 50V | 100μA @ 50V | 800mV @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| HERAF1006G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-heraf1004gc0g-datasheets-2545.pdf | TO-220-2 Full Pack | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | Standard | 60pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RL254M-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/microcommercialco-rl252mtp-datasheets-2185.pdf | DO-204AC, DO-15, Axial | 2 | EAR99 | compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 5μA | Standard | 100A | 1 | 2.5A | 35pF @ 4V 1MHz | 400V | 1V @ 40V | 2.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| CTLSH1-40M621H BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctlsh140m621htr-datasheets-2831.pdf | 6-XFDFN Exposed Pad | 6 | EAR99 | compliant | 8541.10.00.80 | YES | DUAL | NO LEAD | 6 | 150°C | 1 | Rectifier Diodes | Not Qualified | R-PDSO-N6 | SINGLE | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.6W | 40V | 15ns | Schottky | 10A | 1A | 50pF @ 4V 1MHz | 40V | 200μA @ 40V | 600mV @ 500mA | 1A DC | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| GPA806HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 800V | 5μA @ 800V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ER1J-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microcommercialco-er1ktp-datasheets-4543.pdf | DO-214AA, SMB | 2 | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 150°C | 10 | 1 | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 75ns | Standard | 1A | 45pF @ 4V 1MHz | 600V | 5μA @ 600V | 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||
| CTLSH1-40M322S TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctlsh140m322sbk-datasheets-2907.pdf | 3-TDFN Exposed Pad | EAR99 | compliant | 8541.10.00.80 | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 40V | 0.29V | 15ns | Schottky | 10A | 1A | 50pF @ 4V 1MHz | 40V | 200μA @ 40V | 1A DC | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| HERAF801G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-heraf808gc0g-datasheets-0363.pdf | TO-220-2 Full Pack | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 50V | 10μA @ 50V | 1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GS1KE-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-gs1getp-datasheets-0009.pdf | DO-214AC, SMA | 2 | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800V | 1.1V | 2μs | Standard | 30A | 1A | 15pF @ 4V 1MHz | 800V | 5μA @ 800V | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||
| HERAF805G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-heraf808gc0g-datasheets-0363.pdf | TO-220-2 Full Pack | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HERAF804G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-heraf808gc0g-datasheets-0363.pdf | TO-220-2 Full Pack | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 300V | 10μA @ 300V | 1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HERAF1003G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-heraf1004gc0g-datasheets-2545.pdf | TO-220-2 Full Pack | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 200V | 10μA @ 200V | 1V @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR10150HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr1060c0g-datasheets-6211.pdf | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 150V | 100μA @ 150V | 1.05V @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB12HT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 3 | 150°C | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 135A | 1 | 12A | 500V | 30μA @ 500V | 1.75V @ 12A | 12A | -55°C~150°C | ||||||||||||||||||||||||||||||
| GS1JE-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-gs1getp-datasheets-0009.pdf | DO-214AC, SMA | 2 | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | 1.1V | 2μs | Standard | 30A | 1A | 15pF @ 4V 1MHz | 600V | 5μA @ 600V | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||
| UG56G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 400V | 10μA @ 400V | 1.55V @ 5A | 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR10100 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr1060c0g-datasheets-6211.pdf | TO-220-2 | 2 | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 150°C | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 100μA | TO-220AC | Schottky | 150A | 1 | 10A | 100V | 100μA @ 100V | 850mV @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| UGB5HT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 65A | 1 | 5A | 500V | 30μA @ 500V | 1.75V @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||
| HERAF1602G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-heraf1606gc0g-datasheets-7345.pdf | TO-220-2 Full Pack | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 150pF @ 4V 1MHz | 100V | 10μA @ 100V | 1V @ 16A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB540L-6314E3/72 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 480mV @ 5A | 5A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4004GPE-E3/91 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | 12 Weeks | 2 | Tin | No | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 2 μs | 2 μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| ER1D-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microcommercialco-er1ktp-datasheets-4543.pdf | DO-214AA, SMB | 2 | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 0.975V | 50ns | Standard | 30A | 1A | 45pF @ 4V 1MHz | 200V | 5μA @ 200V | 1A | -50°C~150°C | |||||||||||||||||||||||||||||
| CTLSH05-40M621 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctlsh0540m621bk-datasheets-2726.pdf | 6-PowerVFDFN | compliant | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 40V | Schottky | 10A | 0.5A | 50pF @ 1V 1MHz | 40V | 100μA @ 30V | 470mV @ 500mA | 500mA DC | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| GPA802 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB15HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 135A | 1 | 15A | 500V | 30μA @ 500V | 1.75V @ 15A | 15A | -55°C~150°C |
