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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Power Rating | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| TSS42U RGG | Taiwan Semiconductor Corporation | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tss43urgg-datasheets-9132.pdf | 0201 (0603 Metric) | 2 | 18 Weeks | EAR99 | 8541.10.00.70 | YES | BOTTOM | NO LEAD | 125°C | 1 | R-PBCC-N2 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.15W | 30V | Schottky | 0.2A | 0.005μs | 10pF @ 1V 1MHz | 30V | 500nA @ 25V | 1V @ 200mA | 200mA | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1D-E3/61T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-s1me361t-datasheets-6649.pdf | 200V | 1A | DO-214AC, SMA | 12pF | 4.5mm | 2.09mm | 2.79mm | Lead Free | 2 | 11 Weeks | Unknown | 2 | yes | EAR99 | LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | S1D | 2 | Single | 30 | 1 | Rectifier Diodes | 1A | 1A | 1.1V | 40A | Standard Recovery >500ns, > 200mA (Io) | SILICON | 40A | 1μA | 200V | 40A | 200V | 1.8 μs | 1.8 μs | Standard | 200V | 1A | 12pF @ 4V 1MHz | 1μA @ 200V | 1.1V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| MUR820G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2004 | /files/onsemiconductor-mur815g-datasheets-9830.pdf | 200V | 8A | TO-220-2 | 10.29mm | 9.27mm | 4.82mm | Lead Free | 2 | 5 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | NO | 260 | MUR820 | 2 | Single | 40 | 1 | Rectifier Diodes | 8A | 8A | 975mV | 100A | CATHODE | ULTRA FAST RECOVERY POWER | 200V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 5μA | 200V | 100A | 200V | 35 ns | 35 ns | Standard | 200V | 8A | 1 | 5μA @ 200V | 975mV @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| MUR860G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2004 | /files/onsemiconductor-mur815g-datasheets-9830.pdf | 600V | 8A | TO-220-2 | 10.29mm | 9.27mm | 4.82mm | Lead Free | 2 | 11 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | NO | 260 | MUR860 | 2 | Single | 40 | 1 | Rectifier Diodes | 8A | 8A | 1.5V | 100A | CATHODE | ULTRA FAST RECOVERY POWER | 600V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 10μA | 600V | 100A | 600V | 60 ns | 60 ns | Standard | 600V | 8A | 1 | 10μA @ 600V | 1.5V @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| STPSC20H12GY-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, ECOPACK®2 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stpsc20h12dy-datasheets-0825.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | YES | SINGLE | GULL WING | STPSC20 | 175°C | 1 | R-PSSO-G2 | 38A | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 1200V | 120μA | 1200V | 0ns | Silicon Carbide Schottky | 1 | 20A | 1650pF @ 0V 1MHz | 1200V | 120μA @ 1200V | 1.5V @ 20A | 20A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS116T-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | /files/diodesincorporated-bav199t7f-datasheets-9810.pdf | 85V | 215mA | SOT-523 | 2pF | 1.6mm | 750μm | 800μm | Lead Free | 3 | 19 Weeks | 2.012816mg | 3 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.70 | 150mW | e3 | Matte Tin (Sn) | 150mW | DUAL | GULL WING | 260 | BAS116 | 3 | Single | 40 | 1 | Rectifier Diodes | 215mA | 215mA | 1.25V | 4A | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5nA | 85V | 4A | 3 μs | 3 μs | Standard | 85V | 215mA | 85V | 2pF @ 0V 1MHz | 5nA @ 75V | 1.25V @ 150mA | 215mA DC | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| BAL99-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | /files/diodesincorporated-bal997-datasheets-1840.pdf | 100V | 300mA | TO-236-3, SC-59, SOT-23-3 | 2pF | 3.05mm | 1mm | 1.4mm | Lead Free | 3 | 19 Weeks | 7.994566mg | 3 | yes | EAR99 | Tin | No | 8541.10.00.70 | 350mW | e3 | DUAL | GULL WING | 260 | BAL99 | 3 | Single | 40 | 1 | Rectifier Diodes | 300mA | 300mA | 1.25V | 2A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2.5μA | 75V | 2A | 4 ns | 4 ns | Standard | 75V | 300mA | 2pF @ 0V 1MHz | 2.5μA @ 75V | 1.25V @ 150mA | 300mA DC | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| RB168LAM-40TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rohmsemiconductor-rb168lam40tr-datasheets-0820.pdf | SOD-128 | 2 | 20 Weeks | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | 1A | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | Schottky | 1A | 40V | 500nA @ 40V | 690mV @ 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1DHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-s1me361t-datasheets-6649.pdf | DO-214AC, SMA | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | AEC-Q101 | DUAL | C BEND | 260 | S1D | Single | 30 | 1 | Rectifier Diodes | R-PDSO-C2 | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 40A | 1.8 μs | Standard | 200V | 1A | 1A | 12pF @ 4V 1MHz | 1μA @ 200V | 1.1V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| S110FP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-s115fp-datasheets-8850.pdf | SOD-123H | 2 | 10 Weeks | 18.4mg | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | TIN | DUAL | FLAT | 260 | 150°C | Single | 30 | 1 | R-PDSO-F2 | 1A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 100V | Schottky | 100V | 1A | 1A | 0.014μs | 32pF @ 4V 1MHz | 50μA @ 100V | 800mV @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH75S12W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stth75s12w-datasheets-0853.pdf | DO-247-2 (Straight Leads) | 2 | 11 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STTH75 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 55 ns | Standard | 1.2kV | 75A | 370A | 1 | 1200V | 50μA @ 1200V | 3.2V @ 75A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-400U120D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Stud Mount | Bulk | 1 (Unlimited) | 200°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs400u120d-datasheets-0761.pdf | DO-205AB, DO-9, Stud | 32mm | 250.5mm | 32mm | 1 | Unknown | 2 | EAR99 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 400A | 1.62V | 8.64kA | CATHODE | HIGH POWER | 0.04 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 8.25kA | 15mA | 1.2kV | 1.2kV | Standard | 1.2kV | 400A | 1 | 1200V | 15mA @ 1200V | 1.62V @ 1500A | -40°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA08TB60-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa08tb60m3-datasheets-0770.pdf | TO-220-2 | 13 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | Standard | 600V | 5μA @ 600V | 2.1V @ 16A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5619 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 250 ns | Standard | 600V | 1A | 1A | 25pF @ 12V 1MHz | 500nA @ 600V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| SS16-LTP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/microcommercialco-ss14ltp-datasheets-8598.pdf | DO-214AC, SMA | 2 | 12 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | Schottky | 1A | 110pF @ 4V 1MHz | 60V | 500μA @ 60V | 700mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP12-12A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2000 | /files/ixys-dsep1212a-datasheets-0781.pdf&product=ixys-dsep1212a-5997932 | 1.2kV | 15A | TO-220-2 | 10.66mm | 16.51mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE | No | 8541.10.00.80 | 3 | Single | 95W | 1 | Rectifier Diodes | 15A | 15A | 2.75V | 90A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90A | 100μA | 1.2kV | 90A | 1.2kV | 40 ns | 40 ns | Standard | 1.2kV | 15A | 1 | 1200V | 100μA @ 1200V | 2.75V @ 15A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| VS-HFA06TB120-M3 | Vishay Semiconductor Diodes Division | $2.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa06tb120m3-datasheets-0783.pdf | TO-220-2 | 13 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | Standard | 1200V | 5μA @ 1200V | 3.9V @ 12A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N645-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6451-datasheets-0792.pdf | DO-204AH, DO-35, Axial | 20pF | 1.88mm | Contains Lead | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | 400mA | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 5A | 50nA | 225V | 5A | Standard | 225V | 400mA | 0.4A | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| STPS20M60D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stps20m60d-datasheets-0794.pdf | TO-220-2 | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 6 months ago) | EAR99 | No | e3 | Tin (Sn) | STPS20 | 3 | Single | 1 | Rectifier Diodes | 20A | 580mV | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400A | 125μA | 60V | 400A | Schottky | 60V | 20A | 1 | 125μA @ 60V | 580mV @ 20A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-12AR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2003 | /files/ixys-dsep6012ar-datasheets-0798.pdf | ISOPLUS247™ | Lead Free | 2 | 28 Weeks | No SVHC | 247 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 2 | Single | 1 | R-PSIP-T2 | 60A | 2.66V | 500A | 650μA | ISOLATED | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 190W | 500A | 650μA | 1.2kV | 500A | 40 ns | 40 ns | Standard | 1.2kV | 60A | 1 | 1200V | 650μA @ 1200V | 2.66V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| UGE0421AY4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Stud | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | AVALANCHE | ROHS3 Compliant | 2003 | /files/ixys-uge0421ay4-datasheets-4626.pdf | UGE | Lead Free | 1 | 16 Weeks | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PUPM-X1 | 6.25V | 300A | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1mA | 3.2kV | 120A | 3.2kV | Standard | 3.2kV | 22.9A | 1 | 7.4A | 3200V | 2mA @ 3200V | 2.72V @ 55A | ||||||||||||||||||||||||||||||||||||||||||||||||
| NSVBAS21HT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | /files/onsemiconductor-bas21ht3g-datasheets-6214.pdf | SC-76, SOD-323 | Lead Free | 2 | 8 Weeks | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.10.00.70 | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | 200mW | DUAL | GULL WING | BAS21 | 2 | Single | 200mW | 1 | Rectifier Diodes | 200mA | 1.25V | 625mA | 100μA | Small Signal =< 200mA (Io), Any Speed | SILICON | 250V | 5A | 50 ns | 50 ns | Standard | 250V | 200mA | 5pF @ 0V 1MHz | 100nA @ 200V | 1.25V @ 200mA | 200mA DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| MSC030SDA120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-msc010sda070k-datasheets-4425.pdf | TO-247-2 | 13 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | TO-247 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1200V | 1.5V @ 30A | 30A DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH16G65C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | ROHS3 Compliant | 2017 | /files/infineontechnologies-idh16g65c6xksa1-datasheets-0738.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 34A | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 97W | 650V | 53μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 783pF @ 1V 1MHz | 650V | 53μA @ 420V | 1.35V @ 16A | 34A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| F1842D400 | Sensata-Crydom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel, Screw | Chassis Mount | Bulk | Not Applicable | 125°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/crydom-f1842d400-datasheets-4607.pdf | 400V | 40A | Module | 91.9mm | Lead Free | 8 Weeks | 2 | Single | Module | 40A | Standard Recovery >500ns, > 200mA (Io) | 400V | 1kA | Standard | 400V | 40A | 400V | 1.4V @ 120A | 40A DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA16TB120-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa16tb120m3-datasheets-0653.pdf | TO-220-2 | 13 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | Standard | 1200V | 20μA @ 1.2kV | 3.93V @ 32A | 16A DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWS08S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ews12sm3-datasheets-0406.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 8EWS08 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | 1.1V | CATHODE | HIGH VOLTAGE HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 50μA | 800V | 150A | TO-252AA | Standard | 800V | 8A | 1 | 8A | 50μA @ 800V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| MBR745 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | TO-220-2 | 17 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 400pF @ 5V 1MHz | 45V | 1mA @ 45V | 570mV @ 7.5A | 7.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH3006W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth3006pi-datasheets-7754.pdf | 600V | 30A | DO-247-2 (Straight Leads) | 15.75mm | 20.15mm | 5.15mm | Lead Free | 2 | 11 Weeks | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | 225 | STTH30 | 2 | Single | 1 | Rectifier Diodes | 30A | 30A | 1.85V | 160A | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 160A | 25μA | 600V | 300A | 600V | 70 ns | 70 ns | Standard | 600V | 30A | 1 | 25μA @ 600V | 1.85V @ 30A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| C3D10065A | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2010 | TO-220-2 | 6 Weeks | Unknown | 2 | 136.3W | Single | TO-220-2 | 10A | 1.8V | 250A | 60μA | No Recovery Time > 500mA (Io) | 90A | 650V | 250A | 0 s | Silicon Carbide Schottky | 650V | 10A | 480pF @ 0V 1MHz | 650V | 60μA @ 650V | 1.8V @ 10A | 30A DC | -55°C~175°C |
