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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CD214B-R2800 | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/bournsinc-cd214br2100-datasheets-0042.pdf | DO-214AA, SMB | 2 | 18 Weeks | 2 | EAR99 | Tin | not_compliant | 8541.10.00.80 | e3 | DUAL | C BEND | NOT SPECIFIED | CD214B | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 2A | 1V | 65A | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 800V | 65A | 800V | Standard | 800V | 2A | 1 | 2A | 25pF @ 4V 1MHz | 5μA @ 800V | 1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| CD214B-R21000 | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/bournsinc-cd214br2100-datasheets-0042.pdf | DO-214AA, SMB | 2 | 18 Weeks | EAR99 | Tin | not_compliant | 8541.10.00.80 | e3 | DUAL | C BEND | NOT SPECIFIED | CD214B | 2 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Standard | 1kV | 2A | 65A | 1 | 2A | 25pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| BYM11-50-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgl41je396-datasheets-0192.pdf | DO-213AB, MELF (Glass) | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | BYM11-50 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1.3V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 150 ns | 150 ns | Standard | 50V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 50V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||
| SB340TA | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-201AD, Axial | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200pF @ 5V 1MHz | 40V | 1mA @ 40V | 520mV @ 3A | 3A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT17G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 35ns | Standard | 30A | 1A | 10pF @ 4V 1MHz | 500V | 5μA @ 500V | 1.7V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| SFT18G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CS3K-E3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-cs3me3i-datasheets-8050.pdf | DO-214AB, SMC | 11 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 2.8μs | Standard | 26pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.2V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1BB R5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s1dbr5g-datasheets-0429.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | Standard | 12pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CS3M-E3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | /files/vishaysemiconductordiodesdivision-cs3me3i-datasheets-8050.pdf | DO-214AB, SMC | 11 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 2.8μs | Standard | 26pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.2V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CD1408-FF1800 | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2007 | /files/bournsinc-cd1408ff11000-datasheets-8043.pdf | Chip, Concave Terminals | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | not_compliant | 8541.10.00.80 | e3 | DUAL | WRAP AROUND | NOT SPECIFIED | CD1408 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1A | 1.7V | 30A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 30A | 800V | 50 ns | 50 ns | Standard | 800V | 1A | 1A | 10pF @ 4V 1MHz | 5μA @ 800V | 1.7V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||
| SS2FL4-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss2fl4m3h-datasheets-1852.pdf | DO-219AB | 13 Weeks | DO-219AB (SMF) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 2A | 125pF @ 4V 1MHz | 40V | 220μA @ 40V | 580mV @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGL41D-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgl41je396-datasheets-0192.pdf | DO-213AB, MELF (Glass) | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | RGL41D | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1.3V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 150 ns | 150 ns | Standard | 200V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 200V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||
| SFT15G A1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.3V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT15G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.3V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES2C-LTP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microcommercialco-es2jltp-datasheets-8649.pdf | DO-214AC, SMA | 2 | 14 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | YES | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 5μA | 35ns | Standard | 50A | 1 | 2A | 15pF @ 4V 1MHz | 150V | 5μA @ 2V | 950mV @ 2A | 2A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| SF22G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf28ga0g-datasheets-8273.pdf | DO-204AC, DO-15, Axial | 10 Weeks | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 40pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGL41K-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgl41je396-datasheets-0192.pdf | DO-213AB, MELF (Glass) | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | RGL41K | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 30A | 800V | 500 ns | 500 ns | Standard | 800V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 800V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||
| RGL41A-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgl41je396-datasheets-0192.pdf | DO-213AB, MELF (Glass) | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | RGL41A | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 150 ns | 150 ns | Standard | 50V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 50V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||
| ESH1B R3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-esh1cr3g-datasheets-2467.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | Standard | 16pF @ 4V 1MHz | 100V | 1μA @ 100V | 900mV @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1KB R5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s1dbr5g-datasheets-0429.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | Standard | 12pF @ 4V 1MHz | 800V | 5μA @ 800V | 1.1V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT16G A1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS2FL3-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss2fl3m3h-datasheets-1834.pdf | DO-219AB | 2 | 13 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | Schottky | 30V | 2A | 50A | 1 | 2A | 145pF @ 4V 1MHz | 30V | 200μA @ 30V | 540mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| BYG23M M2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-byg23mm2g-datasheets-0467.pdf | DO-214AC, SMA | 20 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | Standard | 15pF @ 4V 1MHz | 1μA @ 1000V | 1.7V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGL41B-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgl41je396-datasheets-0192.pdf | DO-213AB, MELF (Glass) | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | RGL41B | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 100V | 150 ns | 150 ns | Standard | 100V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 100V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||
| CD1408-FF1200 | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2007 | /files/bournsinc-cd1408ff11000-datasheets-8043.pdf&product=bournsinc-cd1408ff1200-5993991 | Chip, Concave Terminals | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | not_compliant | 8541.10.00.80 | e3 | DUAL | WRAP AROUND | NOT SPECIFIED | CD1408 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1A | 1.7V | 30A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 50 ns | 50 ns | Standard | 200V | 1A | 1A | 10pF @ 4V 1MHz | 5μA @ 200V | 1.7V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||
| S1JB R5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-s1dbr5g-datasheets-0429.pdf | DO-214AA, SMB | 20 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | Standard | 12pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS1FL3HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss1fl3m3h-datasheets-2831.pdf | DO-219AB | 13 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 1A | 130pF @ 4V 1MHz | 30V | 200μA @ 30V | 480mV @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF26G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf28ga0g-datasheets-8273.pdf | DO-204AC, DO-15, Axial | 10 Weeks | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD3S130H-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | ROHS3 Compliant | 2008 | /files/diodesincorporated-pd3s130h7-datasheets-9956.pdf | 30V | 1A | PowerDI™ 323 | 40pF | 1.9mm | 650μm | 1.25mm | Lead Free | 2 | 17 Weeks | 323 | no | EAR99 | HIGH RELIABILITY | Tin | No | 8541.10.00.80 | e3 | Standard | DUAL | FLAT | 260 | PD3S130 | 2 | Single | 40 | 1 | Rectifier Diodes | R-PDSO-F2 | 1A | 1A | 450mV | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 22A | 100μA | 30V | 22A | Schottky | 30V | 1A | 40pF @ 10V 1MHz | 100μA @ 30V | 470mV @ 1A | -65°C~150°C | |||||||||||||||||||||||
| SFT18G A1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 1A | 1A | -55°C~150°C |
