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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SFT12G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 35ns | Standard | 30A | 1A | 20pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SFT14G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 35ns | Standard | 30A | 1A | 20pF @ 4V 1MHz | 200V | 5μA @ 200V | 950mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SFT11G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 35ns | Standard | 30A | 1A | 20pF @ 4V 1MHz | 50V | 5μA @ 50V | 950mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SS2PH5-M3/85A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss2ph5m384a-datasheets-5552.pdf | DO-220AA | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | Schottky | 50V | 2A | 50A | 1 | 2A | 93pF @ 4V 1MHz | 50V | 2μA @ 50V | 800mV @ 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| SFT14G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 200V | 5μA @ 200V | 950mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT12G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| US1K-M3/61T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-us1me361t-datasheets-6834.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75 ns | Standard | 800V | 1A | 1A | 10pF @ 4V 1MHz | 800V | 10μA @ 1000V | 1.7V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| RS1PJ-M3/85A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rs1pdm384a-datasheets-2346.pdf | DO-220AA | 2 | 10 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | Not Qualified | 1A | 1.3V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 30A | 250 ns | Standard | 600V | 1A | 1A | 9pF @ 4V 1MHz | 1μA @ 600V | 1.3V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||
| 1N4946GP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4947gpe354-datasheets-9953.pdf | DO-204AL, DO-41, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | 1N4946 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 1.3V | 25A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 25A | 600V | 250 ns | 250 ns | Standard | 600V | 1A | 1A | 15pF @ 4V 1MHz | 1μA @ 600V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||
| SF12G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf18ga0g-datasheets-7778.pdf | DO-204AL, DO-41, Axial | 10 Weeks | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HT13G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ht13gr0g-datasheets-5612.pdf | T-18, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 50ns | Standard | 1A | 15pF @ 4V 1MHz | 200V | 5μA @ 200V | 1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| SS115L RQG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss16lr3g-datasheets-9091.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 50μA @ 150V | 900mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS1AFA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/onsemiconductor-rs1gfa-datasheets-9984.pdf | SOD-123W | 2 | 10 Weeks | 19mg | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | DUAL | FLAT | 260 | Single | NOT SPECIFIED | 1 | R-PDSO-F2 | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 50V | 150 ns | Standard | 50V | 800mA | 0.8A | 10pF @ 4V 1MHz | 5μA @ 50V | 1.3V @ 800mA | -55°C~150°C | ||||||||||||||||||||||||||||||||
| 1N5406T-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/comchiptechnology-1n5401g-datasheets-8956.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY | WIRE | NOT SPECIFIED | 1N5406 | 125°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | Standard | 600V | 3A | 200A | 1 | 3A | 600V | 5μA @ 600V | 1V @ 3A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||
| SFT12G A1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF12G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf18ga0g-datasheets-7778.pdf | DO-204AL, DO-41, Axial | 10 Weeks | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HT12G A1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ht13gr0g-datasheets-5612.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 15pF @ 4V 1MHz | 100V | 5μA @ 100V | 1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HT11G A1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ht13gr0g-datasheets-5612.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 15pF @ 4V 1MHz | 50V | 5μA @ 50V | 1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5407-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/comchiptechnology-1n5401g-datasheets-8956.pdf | DO-201AD, Axial | 2 | 10 Weeks | HIGH RELIABILITY | WIRE | NOT SPECIFIED | 1N5407 | Single | NOT SPECIFIED | 1 | O-PALF-W2 | 200A | 5μA | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2 μs | Standard | 800V | 3A | 1 | 3A | 5μA @ 800V | 1V @ 3A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||
| HER105G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her102ga0g-datasheets-8644.pdf | DO-204AL, DO-41, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 50ns | Standard | 1A | 15pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| SFT13G A1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 150V | 5μA @ 150V | 950mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4005E-E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4004e353-datasheets-9234.pdf | DO-204AL, DO-41, Axial | 18 Weeks | Tin | Single | DO-204AL (DO-41) | 45A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 600V | 45A | 600V | Standard | 600V | 1A | 15pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| SDM05A30CP3-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 0201 (0603 Metric) | 2 | 24 Weeks | e4 | Nickel/Gold (Ni/Au) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PBCC-N2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.6W | 30V | 4.8ns | Schottky | 0.5A | 7pF @ 10V 1MHz | 30V | 9μA @ 30V | 710mV @ 500mA | 500mA | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| ES1CE-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 | ROHS3 Compliant | 2006 | /files/microcommercialco-es1metp-datasheets-8565.pdf | DO-214AC, SMA | 2 | 8 Weeks | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 10 | 1 | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 50ns | Standard | 1A | 45pF @ 4V 1MHz | 150V | 5μA @ 150V | 975mV @ 1A | 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||
| US1J-M3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-us1me361t-datasheets-6834.pdf | DO-214AC, SMA | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 1A | 1V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 30A | 75 ns | Standard | 600V | 1A | 1A | 10μA @ 600V | 1.7V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| 1N4004E-E3/53 | Vishay Semiconductor Diodes Division | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-1n4004e353-datasheets-9234.pdf | DO-204AL, DO-41, Axial | 18 Weeks | No | Single | DO-204AL (DO-41) | 45A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 45A | 400V | Standard | 400V | 1A | 15pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| HT14G A1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ht13gr0g-datasheets-5612.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 15pF @ 4V 1MHz | 300V | 5μA @ 300V | 1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES1HL RQG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es1dlrvg-datasheets-8322.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 8pF @ 1V 1MHz | 500V | 5μA @ 500V | 1.7V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HT13G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ht13gr0g-datasheets-5612.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 15pF @ 4V 1MHz | 200V | 5μA @ 200V | 1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HER105G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her102ga0g-datasheets-8644.pdf | DO-204AL, DO-41, Axial | 10 Weeks | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 15pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C |
