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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Pitch | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| SCS320AJTLL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs320ajtll-datasheets-6039.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 125W | 650V | 100μA | 0ns | Silicon Carbide Schottky | 104A | 1 | 20A | 1000pF @ 1V 1MHz | 650V | 100μA @ 650V | 1.5V @ 20A | 20A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSIC2SD120D10 | Littelfuse Inc. | $6.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Gen2 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/littelfuseinc-lsic2sd120d10-datasheets-5838.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 23 Weeks | YES | SINGLE | GULL WING | 260 | 175°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 136W | 1200V | 100μA | 0ns | Silicon Carbide Schottky | 80A | 1 | 28A | 582pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.8V @ 10A | 28A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N486B | Microsemi Corporation | $113.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/118 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-204AH, DO-35, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/118F | WIRE | 2 | Single | 1 | Qualified | 200mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 225V | 2A | Standard | 25nA @ 225V | 1V @ 100mA | 200mA DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5190 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/424 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500/424A | WIRE | 1N5190 | 2 | Single | 1 | Qualified | O-XALF-W2 | 3A | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 600V | 80A | 400 ns | Standard | 600V | 3A | 1 | 3A | 2μA @ 600V | 1.5V @ 9A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS1N5806US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | Single | 1 | Qualified | 975mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3W | 1μA | 150V | 35A | 25 ns | Standard | 150V | 1A | 1A | 25pF @ 10V 1MHz | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| FFSB3065B-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/onsemiconductor-ffsb3065bf085-datasheets-6140.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | yes | not_compliant | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1280pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 30A | 73A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA15PB60PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Radial, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2001 | /files/vishaysemiconductordiodesdivision-vshfa15pb60pbf-datasheets-6159.pdf&product=vishaysemiconductordiodesdivision-vshfa15pb60pbf-5989448 | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | Lead Free | 2 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Single | 74W | 1 | Rectifier Diodes | 15A | 1.7V | 150A | CATHODE | EFFICIENCY | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 10μA | 600V | 150A | 600V | 60 ns | 60 ns | Standard | 600V | 15A | 1 | 10μA @ 600V | 1.7V @ 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| LSIC2SD120D20 | Littelfuse Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Gen2 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/littelfuseinc-lsic2sd120d20-datasheets-6154.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 23 Weeks | PD-CASE | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 250W | 1200V | 100μA | 0ns | Silicon Carbide Schottky | 140A | 1 | 54.5A | 1142pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.8V @ 20A | 54.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 63SPD100A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Nonstandard SMD | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1200pF @ 5V 1MHz | 100V | 1mA @ 100V | 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR5010R | GeneSiC Semiconductor | $20.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 50A | 1V | 600A | ANODE | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | 75 ns | Standard, Reverse Polarity | 100V | 50A | 1 | 10μA @ 50V | 1V @ 50A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5551C.TR | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | Not Applicable | Axial | 12 Weeks | 1N5551 | Standard Recovery >500ns, > 200mA (Io) | 2μs | Standard | 92pF @ 5V 1MHz | 400V | 1μA @ 400V | 1V @ 3A | 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR30GR02 | GeneSiC Semiconductor | $12.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Through Hole | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Solder | RoHS Compliant | 2003 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | 3 | Right Angle | EAR99 | 8541.10.00.80 | UPPER | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 2.54mm | 30A | 1.4V | 300A | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC20H12G-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ECOPACK®2 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stpsc20h12gtr-datasheets-6037.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1.65nF | 4.85mm | 2 | 14 Weeks | ACTIVE (Last Updated: 6 months ago) | D2Pak | YES | SINGLE | GULL WING | NOT SPECIFIED | STPSC20 | NOT SPECIFIED | 1 | 175°C | R-PSSO-G2 | 20A | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 1200V | 140A | 10μA | 1.2kV | 0ns | Silicon Carbide Schottky | 1 | 1650pF @ 0V 1MHz | 1200V | 120μA @ 1200V | 1.5V @ 20A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5614US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 2 μs | Standard | 200V | 1A | 1A | 500nA @ 200V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60APU06PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishay-vs60apu06pbf-datasheets-9786.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | Unknown | 3 | EAR99 | No | 60A | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 600V | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | 60A | 1.68V | 600A | CATHODE | ULTRA FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 50μA | 600V | 600A | 600V | TO-247AC | 45 ns | 45 ns | Standard | 600V | 60A | 1 | 50μA @ 600V | 1.68V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| GC08MPS12-252 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 545pF @ 1V 1MHz | 1200V | 7μA @ 1200V | 1.8V @ 8A | 40A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDFW40E65D1EXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idfw40e65d1exksa1-datasheets-6082.pdf | TO-247-3 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 42A | Fast Recovery =< 500ns, > 200mA (Io) | 76ns | Standard | 650V | 40μA @ 650V | 2.1V @ 40A | 42A DC | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H12B-TR1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ECOPACK® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/stmicroelectronics-stpsc10h12d-datasheets-0529.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | YES | SINGLE | GULL WING | NOT SPECIFIED | STPSC10 | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | 10A | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 1200V | 60μA | 0ns | Silicon Carbide Schottky | 1 | 725pF @ 0V 1MHz | 1200V | 60μA @ 1200V | 1.5V @ 10A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSB10120A-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/onsemiconductor-ffsb10120af085-datasheets-6088.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | yes | HIGH RELIABILITY, PD-CASE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 283W | 1200V | 200μA | 1200V | 0ns | Silicon Carbide Schottky | 90A | 1 | 21A | 612pF @ 1V 100kHz | 1200V | 200μA @ 1200V | 1.75V @ 10A | 21A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPU04PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Radial, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2001 | /files/vishay-vs60epu04n3-datasheets-8028.pdf | TO-247-2 | 15.875mm | 20.701mm | 5.3086mm | Lead Free | 2 | 11 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Single | 1 | Rectifier Diodes | 60A | 1.25V | 600A | CATHODE | ULTRA FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 50μA | 400V | 600A | 400V | 60 ns | 60 ns | Standard | 400V | 60A | 1 | 50μA @ 400V | 1.25V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| SCS210AJHRTLL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-scs210ajhrtll-datasheets-5765.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | e2 | Tin/Copper (Sn/Cu) | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 83W | 650V | 200μA | 0ns | Silicon Carbide Schottky | 30A | 1 | 10A | 365pF @ 1V 1MHz | 650V | 200μA @ 600V | 1.55V @ 10A | 10A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5416US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5416us-datasheets-6131.pdf | E-MELF | Contains Lead | 2 | 7 Weeks | 2 | no | HIGH RELIABILITY, METALLURGICALLY BONDED | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 80A | 150 ns | Standard | 100V | 3A | 1 | 3A | 1μA @ 100V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40EPF06-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs40epf06m3-datasheets-6133.pdf | TO-247-2 | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 180 ns | Standard | 600V | 40A | 475A | 1 | 600V | 100μA @ 600V | 1.25V @ 40A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR6A02 | GeneSiC Semiconductor | $6.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | CATHODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 50V | 50V | 200 ns | 200 ns | Standard | 50V | 6A | 1 | 6A | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5615 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5617-datasheets-5896.pdf | 200V | 1A | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 1N5615 | 2 | Single | 1 | Qualified | 1A | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 150 ns | Standard | 200V | 1A | 45pF @ 12V 1MHz | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SCS215AJHRTLL | ROHM Semiconductor | $7.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs215ajhrtll-datasheets-5968.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | e2 | Tin/Copper (Sn/Cu) | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 100W | 650V | 300μA | 0ns | Silicon Carbide Schottky | 41A | 1 | 15A | 550pF @ 1V 1MHz | 650V | 300μA @ 600V | 1.55V @ 15A | 15A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
| LSIC2SD120C10 | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Gen2 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/littelfuseinc-lsic2sd120c10-datasheets-5824.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 38 Weeks | 2 | EAR99 | PD-CASE | unknown | 8541.10.00.80 | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | 33A | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 176W | 100μA | 0ns | Silicon Carbide Schottky | 1 | 582pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.8V @ 10A | 33A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPF12-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30apf10m3-datasheets-0552.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 30A | 1.41V | CATHODE | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 350A | 100μA | 1.2kV | 350A | 450 ns | Standard | 1.2kV | 30A | 1 | 1200V | 100μA @ 1200V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| STTH30ST06WY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stth30st06wy-datasheets-5836.pdf | DO-247-2 (Straight Leads) | 2 | 11 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SOFT FACTOR IS 0.3 | NOT SPECIFIED | STTH30 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSFM-T2 | 30A | 3.6V | 160A | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 160A | 50 ns | 39 ns | Standard | 600V | 30A | 1 | 600V | 50μA @ 600V | 3.6V @ 30A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40EPF12PBF |
Min: 1 Mult: 1 |
0 | 0x0x0 |
