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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 1N1190AR | GeneSiC Semiconductor | $10.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1190AR | 200°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 800A | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 600V | Standard, Reverse Polarity | 600V | 40A | 1 | 10μA @ 50V | 1.1V @ 40A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| TST30U45CW C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tst30u45cwc0g-datasheets-2988.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 150°C | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 500μA | TO-220AB | Schottky | 250A | 1 | 15A | 45V | 500μA @ 45V | 550mV @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3210 | GeneSiC Semiconductor | $8.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3210-datasheets-9415.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N3210 | DO-203AB (DO-5) | 15A | 297A | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 200V | 200V | Standard | 200V | 15A | 200V | 10μA @ 50V | 1.5V @ 15A | 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | No | Single | DO-203AB (DO-5) | 70A | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 9mA | 1.2kV | 1.25kA | 1.2kV | Standard | 1.2kV | 70A | 1200V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TST30U60CW C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tst30u45cwc0g-datasheets-2988.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 150°C | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 500μA | TO-220AB | Schottky | 250A | 1 | 15A | 60V | 500μA @ 60V | 580mV @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| S85Q | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.1V | 1.05kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.2kV | 1.2kV | Standard | 1.2kV | 85A | 1 | 1200V | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 13 Weeks | 2 | No | Single | 350mW | DO-203AB | 70A | 1.35V | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 1.25kA | 9mA | 600V | 1.25kA | 600V | Standard, Reverse Polarity | 600V | 70A | 600V | 9mA @ 600V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| RF2001T4S | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2001 | /files/rohm-rf2001t4s-datasheets-9399.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | 20A | 100A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 430V | 100A | 430V | TO-220AB | 30 ns | 30 ns | Standard | 400V | 20A | 1 | 10μA @ 400V | 1.6V @ 20A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||
| VS-40HFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.4mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 40A | 1.3V | 595A | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 9mA | 800V | 595A | 800V | Standard, Reverse Polarity | 800V | 40A | 1 | 9mA @ 800V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-85HF80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.369kA | 9mA | 800V | 1.8kA | 800V | 500 ns | Standard | 800V | 85A | 1 | 9mA @ 800V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||
| 1N5553US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 5A | 1.3V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 100A | 2 μs | Standard | 800V | 3A | 1 | 5A | 1μA @ 800V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| STF15150 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-220-2 Full Pack, Isolated Tab | 19 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 200μA @ 150V | 1.36V @ 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6F60 | Vishay Semiconductor Diodes Division | $4.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | 11mm | DO-203AA, DO-4, Stud | 31.8mm | 31.8008mm | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 6A | 1.1V | 167A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 167A | 12mA | 600V | 167A | 600V | Standard | 600V | 6A | 1 | 6A | 12mA @ 600V | 1.1V @ 19A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-C4PH6006L-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Tube | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsc4ph6006ln3-datasheets-2913.pdf | TO-247-3 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | Standard | 600V | 50μA @ 600V | 2V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N2129A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N2129 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 60A | 1.3V | 900A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 900A | 10mA | 100V | 900A | 100V | Standard | 100V | 60A | 1 | 10mA @ 100V | 1.3V @ 188A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||
| VS-85HFR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9mA | 1.2kV | 1.8kA | 1.2kV | Standard, Reverse Polarity | 1.2kV | 85A | 1 | 1200V | 9mA @ 1200V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||
| VS-40HF100 | Vishay Semiconductor Diodes Division | $9.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 40A | 1.3V | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 9mA | 1kV | 595A | 1kV | Standard | 1kV | 40A | 1 | 1000V | 9mA @ 1000V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||
| VS-12F100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-vs12fr120-datasheets-0536.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 12F100 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 12A | 1.26V | 280A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 280A | 12mA | 1kV | 370A | 1kV | Standard | 1kV | 12A | 1 | 1000V | 12mA @ 1000V | 1.26V @ 38A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| VS-16FLR60S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 13 Weeks | 2 | Single | DO-203AA | 16A | 225A | 600V | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 225A | 50μA | 600V | 225A | 600V | 200 ns | 200 ns | Standard, Reverse Polarity | 600V | 16A | 600V | 50μA @ 600V | 1.4V @ 16A | 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| S40KR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s40kr-datasheets-9391.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 595A | SINGLE | ANODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard, Reverse Polarity | 800V | 40A | 1 | 10μA @ 100V | 1.1V @ 40A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5616US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 2 μs | Standard | 400V | 1A | 1A | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||
| VS-70HFR40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.4mm | 13 Weeks | Unknown | 2 | No | Single | DO-203AB | 70A | 1.35V | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 1.05kA | 15mA | 400V | 1.25kA | 400V | Standard, Reverse Polarity | 400V | 70A | 400V | 15mA @ 400V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 20.08mm | 22.9mm | 17.4mm | 13 Weeks | Unknown | 2 | Single | DO-203AB | 70A | 1.35V | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 1.25kA | 15mA | 200V | 1.25kA | 200V | Standard, Reverse Polarity | 200V | 70A | 200V | 15mA @ 200V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40EPS12-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs40eps12m3-datasheets-2891.pdf | TO-247-2 | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 1.2kV | 40A | 475A | 1 | 1200V | 100μA @ 1200V | 1V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1187A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1187 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 1.3V | 800A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800A | 2.5mA | 300V | 300V | Standard | 300V | 40A | 1 | 2.5mA @ 300V | 1.3V @ 126A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||
| VS-25F100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 25A | 900mV | 373A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 373A | 12mA | 1kV | 373A | 1kV | Standard | 1kV | 25A | 1 | 1000V | 12mA @ 1000V | 1.3V @ 78A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| MBR1635-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-220-2 | Lead Free | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | MBR1635 | 3 | Single | 30 | 1 | Rectifier Diodes | 16A | 630mV | 150A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 35V | 150A | Schottky | 35V | 16A | 1 | 200μA @ 35V | 630mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| MBRD320G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-mbrd340rlg-datasheets-3980.pdf | 20V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | No | Standard | Halogen Free | MBRD320 | Single | DPAK | 3A | 3A | 600mV | 75A | 200μA | 20V | Fast Recovery =< 500ns, > 200mA (Io) | 75A | 200μA | 20V | 75A | Schottky | 20V | 3A | 20V | 200μA @ 20V | 600mV @ 3A | 3A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| RFNL10TJ6SGC9 | ROHM Semiconductor | $1.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | 12 Weeks | yes | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | Standard | 600V | 10A | 600V | 10μA @ 600V | 1.3V @ 10A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFU20TM5S | ROHM Semiconductor | $1.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-3 Full Pack | Lead Free | 2 | 3 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 20A | 1.65V | 100A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 530V | 100A | TO-220AC | 30 ns | 23 ns | Standard | 530V | 20A | 1 | 10μA @ 530V | 2V @ 20A | 150°C Max |
