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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Logic Function | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Alternate Memory Width | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min | Time Format |
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| 70V3379S4BC8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 4 (72 Hours) | SRAM - Dual Port, Synchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70v3379s5bfi-datasheets-4408.pdf | 256-LBGA | 13 Weeks | 3.15V~3.45V | IDT70V3379 | 256-CABGA (17x17) | 576Kb 32K x 18 | Volatile | 4.2ns | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL512SAGBAEA10 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FL-S | Surface Mount | -55°C~125°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 1.2mm | Non-RoHS Compliant | 24-TBGA | 8mm | 6mm | 24 | 13 Weeks | 1 | YES | 2.7V~3.6V | BOTTOM | 3V | 1mm | 3.6V | 2.7V | R-PBGA-B24 | AEC-Q100 | 512Mb 64M x 8 | Non-Volatile | 3V | 133MHz | FLASH | SPI - Quad I/O | 64MX8 | 8 | 536870912 bit | SERIAL | 1 | |||||||||||||||||||||||||||||||||||||||||||
| 70V3569S4BC8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 4 (72 Hours) | SRAM - Dual Port, Synchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70v3569s5bfi-datasheets-4375.pdf | 256-LBGA | 13 Weeks | 3.15V~3.45V | IDT70V3569 | 576Kb 16K x 36 | Volatile | 4.2ns | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E512M64D4NK-046 WT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E1G32D4NQ-053 WT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL128S13FAEV10 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GL-S | Surface Mount | -55°C~125°C TA | Tray | 3 (168 Hours) | FLASH - NOR | Non-RoHS Compliant | 64-LBGA | 13 Weeks | 2.7V~3.6V | 128Mb 8M x 16 | Non-Volatile | 130ns | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V9199L9PFGI8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Synchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70v9099l9pfg8-datasheets-8813.pdf | 100-LQFP | 13 Weeks | 3V~3.6V | IDT70V9199 | 1.125Mb 128K x 9 | Volatile | 9ns | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E1G32D4NQ-053 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Box | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D512M32D2DS-053 AUT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 16Gb 512M x 32 | Volatile | 1.866GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V3379S5BF8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Synchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70v3379s5bfi-datasheets-4408.pdf | 208-LFBGA | 10 Weeks | 3.15V~3.45V | IDT70V3379 | 208-CABGA (15x15) | 576Kb 32K x 18 | Volatile | 5ns | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7005L25G | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tray | 1 (Unlimited) | SRAM - Dual Port, Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7005l20pfgi-datasheets-7646.pdf | 68-BPGA | 13 Weeks | 4.5V~5.5V | IDT7005 | 68-PGA (29.46x29.46) | 64Kb 8K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D1024M32D4DT-053 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-VFBGA | 1.1V | 32Gb 1G x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D512M32D2DS-053 AUT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 16Gb 512M x 32 | Volatile | 1.866GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V3569S6BF8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Synchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70v3569s5bfi-datasheets-4375.pdf | 208-LFBGA | 13 Weeks | 3.15V~3.45V | IDT70V3569 | 208-CABGA (15x15) | 576Kb 16K x 36 | Volatile | 6ns | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61DDP2B251236A-400M3L | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, DDR IIP | 1.4mm | ROHS3 Compliant | 165-LBGA | 17mm | 15mm | 165 | 12 Weeks | 165 | 3A991.B.2.A | 8542.32.00.41 | 1 | YES | 1.71V~1.89V | BOTTOM | NOT SPECIFIED | 1.8V | 1mm | 165 | 1.89V | 1.71V | NOT SPECIFIED | 18Mb 512K x 36 | Volatile | 400MHz | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 0.45 ns | |||||||||||||||||||||||||||||||||||||||||||
| MT53E512M64D4NK-053 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29VZZZBD8FQKSM-046 W.G8J TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 6 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D512M64D4RQ-053 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 556-WFBGA | 1.1V | 32Gb 512M x 64 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61DDPB21M18A-400M3L | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, DDR IIP | 1.4mm | ROHS3 Compliant | 165-LBGA | 17mm | 15mm | 165 | 12 Weeks | 165 | yes | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | YES | 1.71V~1.89V | BOTTOM | 260 | 1.8V | 1mm | 165 | 1.89V | 1.71V | 40 | 1.8V | 0.75mA | Not Qualified | 18Mb 1M x 18 | Volatile | 3-STATE | 400MHz | SRAM | Parallel | 1MX18 | 18 | 18874368 bit | 0.32A | 0.45 ns | COMMON | |||||||||||||||||||||||||||||||||
| CY7C1170KV18-550BZC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, DDR II+ | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1168kv18400bzxc-datasheets-4819.pdf | 165-LBGA | 1.8V | 165 | 13 Weeks | 165 | 18 Mb | 1 | not_compliant | 820mA | 1.7V~1.9V | BOTTOM | CY7C1170 | Not Qualified | 18Mb 512K x 36 | Volatile | 3-STATE | 450 ps | 550MHz | 18b | SRAM | Parallel | 36 | 0.34A | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||
| MT53D1024M32D4DT-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-VFBGA | 1.1V | 32Gb 1G x 32 | Volatile | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E512M64D4NK-053 WT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C2163KV18-550BZXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, QDR II+ | 1.4mm | ROHS3 Compliant | 2003 | 165-LBGA | 15mm | 1.8V | 165 | 13 Weeks | 165 | 18 Mb | 2 | PIPELINED ARCHITECTURE | No | 1 | 780mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1.8V | 1mm | CY7C2163 | 165 | 1.9V | 1.7V | 30 | 18Mb 1M x 18 | Volatile | 3-STATE | 450 ps | 550MHz | 18b | SRAM | Parallel | 1MX18 | 18 | 0.34A | 18b | Synchronous | SEPARATE | 1.7V | ||||||||||||||||||||||||||||||
| IS61DDB24M18A-250M3L | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, DDR II | 1.4mm | ROHS3 Compliant | 165-LBGA | 17mm | 15mm | 165 | 12 Weeks | 165 | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1 | YES | 1.71V~1.89V | BOTTOM | NOT SPECIFIED | 1.8V | 1mm | 165 | 1.89V | 1.71V | NOT SPECIFIED | 72Mb 4M x 18 | Volatile | 250MHz | SRAM | Parallel | 4MX18 | 18 | 75497472 bit | 0.45 ns | ||||||||||||||||||||||||||||||||||||||||||
| MT29VZZZBD8FQKSM-046 W.G8J | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 6 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62177ESL-55ZXIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62177esl55zxit-datasheets-8918.pdf | 48-TFSOP (0.724, 18.40mm Width) | Lead Free | 48 | 13 Weeks | 48 | 32 Mb | 1 | No | e3 | Matte Tin (Sn) | YES | 2.2V~3.6V 4.5V~5.5V | DUAL | 0.5mm | CY62177 | 2.5/3.35V | 0.045mA | 32Mb 4M x 8 2M x 16 | Volatile | 3-STATE | 21b | SRAM | Parallel | 16 | 55ns | 8 | 55 ns | COMMON | |||||||||||||||||||||||||||||||||||||||||
| MT53E512M64D4NW-053 WT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B108L-ZS45XIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | 1.194mm | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy14b108lzs45xi-datasheets-4656.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.415mm | 3V | 44 | 6 Weeks | 44 | 8 Mb | 3A991.B.2.A | Gold | No | 8542.32.00.41 | 1 | 57mA | e3 | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 3V | 0.8mm | CY14B108 | 44 | 3.6V | 2.7V | 30 | SRAMs | 8Mb 1M x 8 | Non-Volatile | 8b | Clock | NVSRAM | Parallel | 1MX8 | 8 | 45ns | 0.01A | 8b | 45 ns | HH:MM:SS | |||||||||||||||||||||||||||||
| MT29F1T08EEHAFJ4-3T:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | FLASH - NAND | 132-VBGA | 2.5V~3.6V | 1Tb 128G x 8 | Non-Volatile | 333MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62187EV18LL-70BAXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 15 Weeks |
