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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Number of Terminations | Factory Lead Time | Number of Pins | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min |
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| IS61QDB41M18A-250M3L | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, QUAD | 1.4mm | ROHS3 Compliant | 165-LBGA | 17mm | 15mm | 165 | 12 Weeks | 165 | yes | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | YES | 1.71V~1.89V | BOTTOM | 260 | 1.8V | 1mm | 165 | 1.89V | 1.71V | 10 | 1.5/1.81.8V | 0.65mA | Not Qualified | 18Mb 1M x 18 | Volatile | 3-STATE | 1.8ns | 250MHz | SRAM | Parallel | 1MX18 | 18 | 18874368 bit | 0.27A | SEPARATE | 1.7V | |||||||||||||||||||||||
| IS61QDB451236A-250M3L | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, QUAD | 1.4mm | ROHS3 Compliant | 165-LBGA | 17mm | 15mm | 165 | 12 Weeks | 165 | yes | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | YES | 1.71V~1.89V | BOTTOM | 260 | 1.8V | 1mm | 165 | 1.89V | 1.71V | 10 | 1.5/1.81.8V | 0.7mA | Not Qualified | 18Mb 512K x 36 | Volatile | 3-STATE | 1.8ns | 250MHz | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 0.27A | SEPARATE | 1.7V | |||||||||||||||||||||||
| MT49H8M36SJ-25 IT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | CMOS | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt49h8m36sj25btr-datasheets-5996.pdf | 144-TFBGA | 18.5mm | 11mm | 144 | 8 Weeks | 1 | EAR99 | AUTO REFRESH | 1 | YES | 1.7V~1.9V | BOTTOM | 1.8V | 1mm | 1.9V | 1.7V | R-PBGA-B144 | 288Mb 8M x 36 | Volatile | 20ns | 400MHz | DRAM | Parallel | 8MX36 | 36 | 301989888 bit | |||||||||||||||||||||||||||||||||
| CY7C1061G18-15ZXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1061g3010zsxi-datasheets-7677.pdf | 48-TFSOP (0.724, 18.40mm Width) | 18.4mm | 12mm | 48 | 13 Weeks | 3A991.B.2.A | 8542.32.00.41 | 1 | YES | 1.65V~2.2V | DUAL | NOT SPECIFIED | 1.8V | 0.5mm | 2.2V | 1.65V | NOT SPECIFIED | R-PDSO-G48 | 16Mb 1M x 16 | Volatile | SRAM | Parallel | 1MX16 | 16 | 15ns | 16777216 bit | 15 ns | |||||||||||||||||||||||||||||||||
| 7025L20JGI8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v424s12phgi-datasheets-8397.pdf | 84-LCC (J-Lead) | 12 Weeks | 4.5V~5.5V | IDT7025 | 128Kb 8K x 16 | Volatile | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71T75802S133BG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71t75602s166pfg-datasheets-1878.pdf | 119-BGA | 14 Weeks | 2.375V~2.625V | IDT71T75 | 119-PBGA (14x22) | 18Mb 1M x 18 | Volatile | 4.2ns | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61DDB22M18C-250M3L | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, DDR II | 1.4mm | ROHS3 Compliant | 165-LBGA | 17mm | 15mm | 165 | 12 Weeks | 8542.32.00.41 | 1 | YES | 1.71V~1.89V | BOTTOM | NOT SPECIFIED | 1.8V | 1mm | 1.89V | 1.71V | NOT SPECIFIED | R-PBGA-B165 | 36Mb 2M x 18 | Volatile | 8.4ns | 250MHz | SRAM | Parallel | 2MX18 | 18 | 37748736 bit | ||||||||||||||||||||||||||||||||||||
| DS1245W-100IND+ | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1245w150-datasheets-4465.pdf | 32-DIP Module (0.600, 15.24mm) | 32 | 11 Weeks | yes | 3A991.B.2.A | 10 YEAR DATA RETENTION | 8473.30.11.40 | 1 | e3 | MATTE TIN | NO | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 2.54mm | DS1245W | 32 | 3.6V | 3V | NOT SPECIFIED | SRAMs | 3.3V | 0.05mA | Not Qualified | R-XDMA-P32 | 1Mb 128K x 8 | Non-Volatile | NVSRAM | Parallel | 128KX8 | 8 | 100ns | 1048576 bit | 0.00025A | 100 ns | ||||||||||||||||||||||||
| SM662GEB-ACS | Silicon Motion, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1061GE18-15ZXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1061g3010zsxi-datasheets-7677.pdf | 48-TFSOP (0.724, 18.40mm Width) | 18.4mm | 12mm | 48 | 13 Weeks | 3A991.B.2.A | 8542.32.00.41 | 1 | YES | 1.65V~2.2V | DUAL | NOT SPECIFIED | 1.8V | 0.5mm | 2.2V | 1.65V | NOT SPECIFIED | R-PDSO-G48 | 16Mb 1M x 16 | Volatile | SRAM | Parallel | 1MX16 | 16 | 15ns | 16777216 bit | 15 ns | |||||||||||||||||||||||||||||||||
| MT49H8M36SJ-25 IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | CMOS | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt49h8m36sj25btr-datasheets-5996.pdf | 144-TFBGA | 18.5mm | 11mm | 144 | 8 Weeks | 1 | AUTO REFRESH; TERM PITCH-MAX | 1 | YES | 1.7V~1.9V | BOTTOM | 1.8V | 1mm | 1.9V | 1.7V | R-PBGA-B144 | 288Mb 8M x 36 | Volatile | 20ns | 400MHz | DRAM | Parallel | 8MX36 | 36 | 301989888 bit | ||||||||||||||||||||||||||||||||||
| CY7C1145KV18-400BZXCT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, QDR II+ | 1.4mm | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1143kv18450bzc-datasheets-6235.pdf | 165-LBGA | 15mm | 1.8V | 165 | 13 Weeks | 165 | 18 Mb | yes | 2 | PIPELINED ARCHITECTURE | No | 1 | 850mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1.8V | 1mm | CY7C1145 | 1.9V | 1.7V | 30 | 18Mb 512K x 36 | Volatile | 3-STATE | 450 ps | 400MHz | 17b | SRAM | Parallel | 36 | 36b | Synchronous | SEPARATE | 1.7V | ||||||||||||||||||||||
| SM662PXB-ACS | Silicon Motion, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71T75802S150BGG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71t75602s166pfg-datasheets-1878.pdf | 119-BGA | 14 Weeks | 2.375V~2.625V | IDT71T75 | 119-PBGA (14x22) | 18Mb 1M x 18 | Volatile | 3.8ns | 150MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FM22LD16-55-BGTR | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FRAM (Ferroelectric RAM) | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-fm22ld1655bg-datasheets-7690.pdf | 48-TFBGA | 8mm | 3.3V | 48 | 9 Weeks | 48 | 4 Mb | EAR99 | 8542.32.00.71 | 1 | 12mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 260 | 3.3V | 0.75mm | FM22LD16 | 48 | 3.6V | 2.7V | NOT SPECIFIED | SRAMs | Not Qualified | 4Mb 256K x 16 | Non-Volatile | 16b | FRAM | Parallel | 256KX16 | 16 | 110ns | 0.00015A | 16b | 55 ns | |||||||||||||||||||||
| 71T75602S100BGG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | ROHS3 Compliant | /files/renesaselectronicsamericainc-71t75602s166pfg-datasheets-1878.pdf | 119-BGA | 14 Weeks | 2.375V~2.625V | IDT71T75 | 119-PBGA (14x22) | 18Mb 512K x 36 | Volatile | 5ns | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC32GAPALBH-AAT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | FLASH - NAND | 153-TFBGA | 5 Weeks | 256Gb 32G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B512M32D2DS-062 AAT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 6 Weeks | 1.1V | 16Gb 512M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71T75902S85BG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71t75902s75pfg8-datasheets-1041.pdf | 119-BGA | 14 Weeks | 2.375V~2.625V | IDT71T75 | 119-PBGA (14x22) | 18Mb 1M x 18 | Volatile | 8.5ns | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SM662GEC-BDST | Silicon Motion, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V25S35PFG | Renesas Electronics America Inc. | $147.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v424s12phgi-datasheets-8397.pdf | 100-LQFP | 16 Weeks | 3V~3.6V | IDT70V25 | 100-TQFP | 128Kb 8K x 16 | Volatile | 35ns | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SM662PEB-ACS | Silicon Motion, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D512M32D2DS-046 AAT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 16Gb 512M x 32 | Volatile | 2133MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A1G16KNR-062E:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 96-TFBGA | 1.14V~1.26V | 16Gb 1G x 16 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D512M32D2DS-053 AAT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 16Gb 512M x 32 | Volatile | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR4A08BCYS35R | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr4a08bcys35-datasheets-8400.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 44 | 8 Weeks | 44 | yes | EAR99 | 8542.32.00.71 | 1 | YES | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.8mm | 44 | 3.6V | 3V | NOT SPECIFIED | 3.3V | 0.17mA | Not Qualified | 16Mb 2M x 8 | Non-Volatile | 8b | RAM | Parallel | 2MX8 | 8 | 35ns | 16777216 bit | 0.014A | 35 ns | ||||||||||||||||||||||||||
| MT53D512M32D2DS-053 AAT:D | Micron Technology Inc. | $22.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 16Gb 512M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7006L25PFG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7006l25pfg8-datasheets-1072.pdf | 64-LQFP | 10 Weeks | 4.5V~5.5V | IDT7006 | 128Kb 16K x 8 | Volatile | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR4A08BMA35R | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 5 (48 Hours) | MRAM (Magnetoresistive RAM) | ASYNCHRONOUS | 1.35mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr4a08bcys35-datasheets-8400.pdf | 48-LFBGA | 10mm | 10mm | 48 | 12 Weeks | 48 | yes | EAR99 | 8542.32.00.71 | 1 | YES | 3V~3.6V | BOTTOM | NOT SPECIFIED | 3.3V | 0.75mm | 48 | 3.6V | 3V | NOT SPECIFIED | 3.3V | 0.17mA | Not Qualified | 16Mb 2M x 8 | Non-Volatile | RAM | Parallel | 2MX8 | 8 | 35ns | 16777216 bit | 0.014A | 35 ns | ||||||||||||||||||||||||||
| CY7C1059DV33-12ZSXQ | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 2002 | 44-TSOP (0.400, 10.16mm Width) | 3.3V | 44 | 10 Weeks | 44 | 8 Mb | 1 | No | 1 | 100mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 3.3V | 0.8mm | CY7C1059 | 44 | 3.6V | 3V | 30 | 8Mb 1M x 8 | Volatile | 3-STATE | 20b | SRAM | Parallel | 8 | 12ns | 0.02A | 8b | Asynchronous | COMMON | 2V |
