Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Alternate Memory Width | Standby Current-Max | Word Size | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Access Time (Max) | Sync/Async | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Ready/Busy | Common Flash Interface | Page Size | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Standby Voltage-Min | Access Mode |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
S26KL128SDABHI020 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HyperFlash™ KL | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/cypresssemiconductor-s26kl128sdabhi020-datasheets-5394.pdf | 24-VBGA | Lead Free | 24 | 13 Weeks | 3A991.B.1.A | 8542.32.00.51 | 1 | YES | 2.7V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 3.6V | 2.7V | NOT SPECIFIED | R-PBGA-B24 | AEC-Q100 | 128Mb 16M x 8 | Non-Volatile | 96ns | 3V | 100MHz | FLASH | Parallel | 16MX8 | 8 | 134217728 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1357C-100BZC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NoBL™ | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.4mm | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1357c100bzc-datasheets-7194.pdf | 165-LBGA | 15mm | 3.3V | Contains Lead | 165 | 6 Weeks | 165 | 9 Mb | no | 2 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | No | 1 | 180mA | e0 | Tin/Lead (Sn/Pb) | 3.135V~3.6V | BOTTOM | 235 | 3.3V | 1mm | CY7C1357 | 165 | 3.6V | 3.135V | 20 | 9Mb 512K x 18 | Volatile | 3-STATE | 7.5ns | 100MHz | 19b | SRAM | Parallel | 18 | 0.04A | 18b | Synchronous | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||
5962-8855202XA | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 5962-8855202 | 28-CerDip | 256Kb 32K x 8 | Volatile | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS43DR82560C-3DBLI | ISSI, Integrated Silicon Solution Inc | $19.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 60-TFBGA | 10.5mm | 8mm | 60 | 8 Weeks | 1 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | YES | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 1.9V | 1.7V | 1.8V | 0.455mA | Not Qualified | R-PBGA-B60 | 2Gb 256M x 8 | Volatile | 3-STATE | 450ps | 333MHz | DRAM | Parallel | 256MX8 | 8 | 15ns | 2147483648 bit | 0.03A | COMMON | 8192 | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IS34ML01G084-BLI | ISSI, Integrated Silicon Solution Inc | $3.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | ROHS3 Compliant | 63-VFBGA | 11mm | 9mm | 63 | 8 Weeks | 3A991.B.1.A | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 2.7V~3.6V | BOTTOM | 260 | 3.3V | 0.8mm | 3.6V | 2.7V | 10 | R-PBGA-B63 | 1Gb 128M x 8 | Non-Volatile | 3.3V | FLASH | Parallel | 128MX8 | 8 | 25ns | 1073741824 bit | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AT28LV010-20TU-630 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | CMOS | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microchiptechnology-at28lv01020tut-datasheets-8371.pdf | 32-TFSOP (0.724, 18.40mm Width) | 18.4mm | 8mm | 32 | 11 Weeks | 1 | e3 | Matte Tin (Sn) | YES | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.5mm | 3.465V | 3.135V | NOT SPECIFIED | R-PDSO-G32 | 1Mb 128K x 8 | Non-Volatile | 200ns | 3V | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1048576 bit | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
71V65603S100PFG | Renesas Electronics America Inc. | $10.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v65603s100pfg-datasheets-7114.pdf | 100-LQFP | 8 Weeks | 3.135V~3.465V | IDT71V65603 | 9Mb 256K x 36 | Volatile | 5ns | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1480V33-167AXC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1480v33167axc-datasheets-7217.pdf | 100-LQFP | 20mm | 3.3V | Lead Free | 100 | 8 Weeks | 100 | 72 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 450mA | e3 | Matte Tin (Sn) | 3.135V~3.6V | QUAD | 260 | 3.3V | 0.65mm | CY7C1480 | 100 | 3.6V | 3.135V | 20 | 72Mb 2M x 36 | Volatile | 3-STATE | 3.4ns | 167MHz | 21b | SRAM | Parallel | 2MX36 | 36 | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
CY7C1041G30-10BAJXE | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1041g3010bajxe-datasheets-7117.pdf | 48-TFBGA | 8mm | 6mm | 48 | 18 Weeks | 3A991.B.2.A | 8542.32.00.41 | 1 | YES | 2.2V~3.6V | BOTTOM | 3V | 0.75mm | CY7C1041 | 3.6V | 2.2V | R-PBGA-B48 | 4Mb 256K x 16 | Volatile | SRAM | Parallel | 256KX16 | 16 | 10ns | 4194304 bit | 10 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS43LD32320C-25BLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2-S4 | SYNCHRONOUS | 1.1mm | ROHS3 Compliant | 134-TFBGA | 11.5mm | 10mm | 134 | 14 Weeks | 1 | EAR99 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 1.14V~1.95V | BOTTOM | NOT SPECIFIED | 1.2V | 0.65mm | 1.3V | 1.14V | NOT SPECIFIED | R-PBGA-B134 | 1Gb 32M x 32 | Volatile | 400MHz | DRAM | Parallel | 32MX32 | 32 | 15ns | 1073741824 bit | MULTI BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AT28C256E-15TU | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TC | Tray | 3 (168 Hours) | CMOS | 150GHz | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microchiptechnology-at28c256e15su-datasheets-4097.pdf | 28-TSSOP (0.465, 11.80mm Width) | 11.8mm | 8mm | 5V | Lead Free | 28 | 14 Weeks | 28 | 256 kb | yes | AUTOMATIC WRITE | Tin | 1 | 50mA | e3 | 4.5V~5.5V | DUAL | 260 | 5V | 0.55mm | AT28C256 | 40 | 5V | Not Qualified | MIL-STD-883 | 256Kb 32K x 8 | Non-Volatile | 3-STATE | 150ns | 5V | EEPROM | Parallel | 32KX8 | 8 | 10ms | 0.0002A | 100000 Write/Erase Cycles | 10ms | YES | YES | NO | 64words | |||||||||||||||||||||||||||||||||||||||||||
AS7C325632-10BIN | Alliance Memory, Inc. | $15.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as7c32563210bin-datasheets-7135.pdf | 90-TFBGA | 90 | 10 Weeks | 8542.32.00.41 | 1 | YES | 2.7V~3.6V | BOTTOM | NOT SPECIFIED | 3.3V | 3.6V | 2.7V | NOT SPECIFIED | R-PBGA-B90 | 8Mb 1M x 8 | Volatile | SRAM | Parallel | 256KX32 | 32 | 10ns | 8388608 bit | 10 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS43DR82560C-3DBL | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 60-TFBGA | 10.5mm | 8mm | 60 | 8 Weeks | 1 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | YES | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 1.9V | 1.7V | 1.8V | 0.455mA | Not Qualified | R-PBGA-B60 | 2Gb 256M x 8 | Volatile | 3-STATE | 450ps | 333MHz | DRAM | Parallel | 256MX8 | 8 | 15ns | 2147483648 bit | 0.03A | COMMON | 8192 | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
S29GL256P10FFI020 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GL-P | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | 1.4mm | ROHS3 Compliant | 2012 | 64-LBGA | 13mm | 64 | 16 Weeks | 64 | 256 Mb | 3A991.B.1.A | Copper, Silver, Tin | No | 8542.32.00.51 | 1 | 110mA | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 2.7V~3.6V | BOTTOM | 260 | 3V | 1mm | 3.6V | 2.7V | 40 | 3/3.3V | 256Mb 32M x 8 | Non-Volatile | 8b | 3V | FLASH | Parallel | 256MX1 | 1 | 100ns | 8 | 0.000005A | 100 ns | Asynchronous | YES | YES | YES | 256 | 128K | YES | YES | 8/16words | |||||||||||||||||||||||||||||||||||||||||||
S26KL256SDABHV020 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HyperFlash™ KL | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | ROHS3 Compliant | 2016 | 24-VBGA | 24 | 13 Weeks | 3A991.B.1.A | 8542.32.00.51 | 1 | YES | 2.7V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 3.6V | 2.7V | NOT SPECIFIED | R-PBGA-B24 | AEC-Q100 | 256Mb 32M x 8 | Non-Volatile | 96ns | 3V | 100MHz | FLASH | Parallel | 32MX8 | 8 | 268435456 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY62146EV30LL-45BVXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 45GHz | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/cypresssemiconductor-cy62146ev30ll45bvxi-datasheets-5334.pdf | 48-VFBGA | 8mm | 3V | Lead Free | 48 | 6 Weeks | 48 | 4 Mb | yes | 1 | No | 1 | 20mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.2V~3.6V | BOTTOM | 260 | 3V | 0.75mm | CY62146 | 48 | 3.6V | 2.2V | 30 | 4Mb 256K x 16 | Volatile | 3-STATE | 18b | SRAM | Parallel | 16 | 45ns | 0.000007A | 16b | 45 ns | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1021CV33-12ZSXE | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1MHz | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1021cv3310zsxa-datasheets-6800.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.52mm | 1.044mm | 10.262mm | 3.3V | Lead Free | 90mA | 44 | 11 Weeks | 44 | 1 Mb | yes | 1 | No | 1 | 90mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 3.3V | 0.8mm | CY7C1021 | 44 | 3.63V | 2.97V | 30 | 1Mb 64K x 16 | Volatile | 3-STATE | 16b | SRAM | Parallel | 12ns | 16b | Asynchronous | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||
AS7C34096B-10BIN | Alliance Memory, Inc. | $5.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as7c34096b10bin-datasheets-6938.pdf | 36-TFBGA | 8mm | 6mm | 36 | 8 Weeks | 1 | YES | 3V~3.6V | BOTTOM | NOT SPECIFIED | 3.3V | 0.75mm | 3.6V | 2.7V | NOT SPECIFIED | R-PBGA-B36 | 4Mb 512K x 8 | Volatile | SRAM | Parallel | 512KX8 | 8 | 10ns | 4194304 bit | 10 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MT41K1G4DA-107:P | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt41k1g4da107p-datasheets-7058.pdf | 78-TFBGA | 10.5mm | 1.35V | Lead Free | 78 | 78 | 4 Gb | 1 | EAR99 | AUTO/SELF REFRESH | Copper, Silver, Tin | 1 | 1.283V~1.45V | BOTTOM | 1.35V | 0.8mm | 1.45V | 1.283V | 4Gb 1G x 4 | Volatile | 4b | 20ns | 933MHz | 16b | DRAM | Parallel | 1GX4 | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AS4C32M16MSA-6BIN | Alliance Memory, Inc. | $7.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TJ | Tray | 3 (168 Hours) | SDRAM - Mobile SDRAM | SYNCHRONOUS | 1mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c32m16msa6bin-datasheets-6941.pdf | 54-VFBGA | 8mm | 8mm | 54 | 8 Weeks | 1 | AUTO/SELF REFRESH | 1 | YES | 1.7V~1.95V | BOTTOM | NOT SPECIFIED | 1.8V | 0.8mm | 1.95V | 1.7V | NOT SPECIFIED | S-PBGA-B54 | 512Mb 32M x 16 | Volatile | 5.5ns | 166MHz | DRAM | Parallel | 32MX16 | 16 | 536870912 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S25FL512SAGMFVG10 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FL-S | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 2.65mm | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s25fl512sdpmfig11-datasheets-8168.pdf | 16-SOIC (0.295, 7.50mm Width) | 10.3mm | 7.5mm | 16 | 13 Weeks | SPI, Serial | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | YES | 2.7V~3.6V | DUAL | 3V | 1.27mm | 3.6V | 2.7V | 3/3.3V | 0.061mA | Not Qualified | R-PDSO-G16 | 512Mb 64M x 8 | Non-Volatile | 3V | 133MHz | FLASH | SPI - Quad I/O | 64MX8 | 8 | 512753664 bit | 1 | 0.0001A | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||||||||||||
71V424L10PHG | Renesas Electronics America Inc. | $33.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v424s12phgi-datasheets-8396.pdf | 44-TSOP (0.400, 10.16mm Width) | 13 Weeks | 3V~3.6V | IDT71V424 | 4Mb 512K x 8 | Volatile | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S70FL01GSAGBHBC10 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100, FL-S | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/cypresssemiconductor-s70fl01gsagbhbc10-datasheets-5389.pdf | 24-TBGA | 8mm | 6mm | 24 | 13 Weeks | 8542.32.00.51 | 1 | YES | 2.7V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 1mm | 3.6V | 2.7V | NOT SPECIFIED | R-PBGA-B24 | 1Gb 128M x 8 | Non-Volatile | 3V | 133MHz | FLASH | SPI - Quad I/O | 128MX8 | 8 | 1073741824 bit | SERIAL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1354C-166AXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NoBL™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1354c166axi-datasheets-6949.pdf | 100-LQFP | 20mm | 3.3V | Lead Free | 180mA | 100 | 6 Weeks | 657.000198mg | 100 | 9 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 180mA | e3 | Matte Tin (Sn) | 3.135V~3.6V | QUAD | 250 | 3.3V | 0.65mm | CY7C1354 | 100 | 3.6V | 3.135V | 40 | 9Mb 256K x 36 | Volatile | 3-STATE | 3.5ns | 166MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 36b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||||||||||||||
CY62157ESL-45ZSXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductor-cy62157esl45zsxi-datasheets-5348.pdf | 44-TSOP (0.400, 10.16mm Width) | Lead Free | 44 | 6 Weeks | 44 | 8 Mb | 1 | IT ALSO OPERATES AT 5V SUPPLY | No | 22MHz | 1 | 25mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~5.5V | DUAL | 260 | 3V | 0.8mm | CY62157 | 44 | 3.6V | 2.2V | 30 | 2.5/5V | 8Mb 512K x 16 | Volatile | 3-STATE | 19b | SRAM | Parallel | 16 | 45ns | 0.000005A | 16b | 45 ns | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
CY62167ELL-45ZXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62167ell45zxi-datasheets-6964.pdf | 48-TFSOP (0.724, 18.40mm Width) | 5V | Lead Free | 48 | 6 Weeks | 48 | 16 Mb | 1 | No | 1 | 30mA | e3 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 5V | 0.5mm | CY62167 | 48 | 30 | 5V | 16Mb 2M x 8 1M x 16 | Volatile | 3-STATE | SRAM | Parallel | 16 | 45ns | 8 | 45 ns | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
CY62146ESL-45ZSXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 2001 | 44-TSOP (0.400, 10.16mm Width) | Lead Free | 44 | 6 Weeks | 44 | 4 Mb | yes | 1 | IT CAN ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY | No | 22MHz | 1 | 20mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V 4.5V~5.5V | DUAL | 260 | 3V | 0.8mm | CY62146 | 44 | 3.6V | 2.2V | 30 | 2.5/5V | 4Mb 256K x 16 | Volatile | 3-STATE | 18b | SRAM | Parallel | 16 | 45ns | 0.000007A | 16b | 45 ns | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
AS6C8016A-55BIN | Alliance Memory, Inc. | $5.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as6c8016a55bin-datasheets-6981.pdf | 48-VFBGA | 3.3V | Lead Free | 48 | 8 Weeks | 48 | 8 Mb | yes | 1 | No | 1 | YES | 2.7V~3.6V | BOTTOM | 3.3V | 0.75mm | 48 | 3.6V | 2.7V | 8Mb 512K x 16 | Volatile | 19b | SRAM | Parallel | 16 | 55ns | 55 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1345G-100AXC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1345g100axc-datasheets-6991.pdf | 100-LQFP | 20mm | 3.3V | Lead Free | 100 | 7 Weeks | 100 | 4 Mb | yes | 4 | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | No | 1 | 205mA | e3 | Matte Tin (Sn) | 3.15V~3.6V | QUAD | 260 | 3.3V | 0.65mm | CY7C1345 | 100 | 3.6V | 3.135V | 20 | 4.5Mb 128K x 36 | Volatile | 3-STATE | 8ns | 100MHz | 17b | SRAM | Parallel | 128KX36 | 36 | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
IS43TR85120A-125KBLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 78-TFBGA | 10.5mm | 1.5V | 78 | 8 Weeks | 78 | 4 Gb | 1 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | YES | 1.425V~1.575V | BOTTOM | 1.5V | 0.8mm | 1.575V | 1.425V | 0.27mA | Not Qualified | 4Gb 512M x 8 | Volatile | 3-STATE | 20ns | 800MHz | 16b | DRAM | Parallel | 512MX8 | 8 | 15ns | 0.018A | COMMON | 8192 | 48 | 48 |
Please send RFQ , we will respond immediately.