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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | Ambient Temperature Range High | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Alternate Memory Width | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | Page Size | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length |
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| CY62177EV30LL-55ZXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62177ev30ll55baxi-datasheets-7745.pdf | 48-TFSOP (0.724, 18.40mm Width) | 18.4mm | 1.2mm | 12mm | 3V | Lead Free | 45mA | 48 | 8 Weeks | No SVHC | 48 | 32 Mb | 1 | No | 1 | 45mA | e3 | Matte Tin (Sn) | 2.2V~3.7V | DUAL | 260 | 3V | 0.5mm | CY62177 | 48 | 3.7V | 2.2V | 30 | 32Mb 4M x 8 2M x 16 | Volatile | 3-STATE | 21b | SRAM | Parallel | 55ns | 55 ns | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||||||||
| DS1245Y-100+ | Maxim Integrated | $54.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1245y120-datasheets-7710.pdf | 32-DIP Module (0.600, 15.24mm) | Lead Free | 32 | 6 Weeks | 32 | yes | 3A991.B.2.A | not_compliant | 8473.30.11.40 | 1 | e3 | TIN | NO | 4.5V~5.5V | DUAL | 260 | 5V | 2.54mm | DS1245Y | 32 | 5.5V | 4.5V | NOT SPECIFIED | SRAMs | 5V | 0.085mA | Not Qualified | 1Mb 128K x 8 | Non-Volatile | NVSRAM | Parallel | 128KX8 | 8 | 100ns | 1048576 bit | 0.0006A | 100 ns | |||||||||||||||||||||||||||||||||||||||||
| 71256L45DB | Renesas Electronics America Inc. | $151.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 11 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 45ns | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT25QL02GCBB8E12-0SIT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt25ql02gcbb8e120sit-datasheets-7559.pdf | 24-TBGA | 8mm | 1.2mm | 6mm | 3V | 24 | 6 Weeks | 24 | 2 Gb | Copper, Silver, Tin | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 260 | 3V | 1mm | 3.6V | 2.7V | 30 | 85°C | 2Gb 256M x 8 | Non-Volatile | 3V | 133MHz | FLASH | SPI | 256MX8 | 8 | 8ms, 2.8ms | SERIAL | 1 | 256B | ||||||||||||||||||||||||||||||||||||||||||||
| MX66U2G45GXRI00 | Macronix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 1.3mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/macronix-mx66u2g45gxri00-datasheets-7657.pdf | 24-LBGA, CSPBGA | 6mm | 8mm | 24 | 10 Weeks | IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1 | 1 | YES | 1.65V~2V | BOTTOM | 1.8V | 1mm | 2V | 1.65V | R-PBGA-B24 | 2Gb 256M x 8 | Non-Volatile | 1.8V | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 256MX8 | 8 | 60μs, 1.5ms | 2147483648 bit | SERIAL | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV204816BLL-10TLI | ISSI, Integrated Silicon Solution Inc | $16.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 18.4mm | 12mm | 48 | 8 Weeks | 1 | YES | 2.4V~3.6V | DUAL | NOT SPECIFIED | 3V | 0.5mm | 3.6V | 2.4V | NOT SPECIFIED | R-PDSO-G48 | 32Mb 2M x 16 | Volatile | SRAM | Parallel | 2MX16 | 16 | 10ns | 33554432 bit | 10 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY15B104Q-LHXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | 2013 | 8-WDFN Exposed Pad | 6mm | 5mm | Lead Free | 8 | 13 Weeks | SPI, Serial | EAR99 | 8542.32.00.71 | 1 | YES | 2V~3.6V | DUAL | 3.3V | 1.27mm | 3.6V | 2V | R-PDSO-N8 | 4Mb 512K x 8 | Non-Volatile | 40MHz | FRAM | SPI | 512KX8 | 8 | 4194304 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR25H40MDF | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | SYNCHRONOUS | 0.9mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr25h40cdf-datasheets-7354.pdf | 8-VDFN Exposed Pad | 6mm | Lead Free | 8 | 12 Weeks | 8 | SPI, Serial | 4 Mb | EAR99 | 1 | 42mA | 600mW | 3V~3.6V | DUAL | 260 | 3.3V | 1.27mm | 8 | 3.6V | 3V | 40 | 3.3V | Not Qualified | 4Mb 512K x 8 | Non-Volatile | 8b | 10 ns | 40MHz | RAM | SPI | 8 | 0.0004A | 8b | |||||||||||||||||||||||||||||||||||||||||||
| DS1230Y-120+ | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1230ab120-datasheets-7498.pdf | 28-DIP Module (0.600, 15.24mm) | Lead Free | 28 | 6 Weeks | 28 | yes | EAR99 | not_compliant | 8473.30.11.40 | 1 | e3 | Matte Tin (Sn) | NO | 4.5V~5.5V | DUAL | NOT SPECIFIED | 5V | 2.54mm | DS1230Y | 28 | 5.5V | 4.5V | NOT SPECIFIED | SRAMs | 5V | 0.085mA | Not Qualified | 256Kb 32K x 8 | Non-Volatile | NVSRAM | Parallel | 32KX8 | 8 | 120ns | 262144 bit | 0.0006A | 120 ns | ||||||||||||||||||||||||||||||||||||||||||
| DS1230Y-150+ | Maxim Integrated | $23.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1230ab120-datasheets-7498.pdf | 28-DIP Module (0.600, 15.24mm) | Lead Free | 28 | 6 Weeks | 28 | yes | EAR99 | not_compliant | 8473.30.11.40 | 1 | e3 | Matte Tin (Sn) | NO | 4.5V~5.5V | DUAL | NOT SPECIFIED | 5V | 2.54mm | DS1230Y | 28 | 5.5V | 4.5V | NOT SPECIFIED | SRAMs | 5V | 0.085mA | Not Qualified | 256Kb 32K x 8 | Non-Volatile | NVSRAM | Parallel | 32KX8 | 8 | 150ns | 262144 bit | 0.0006A | 150 ns | |||||||||||||||||||||||||||||||||||||||||
| CY7C1061G30-10ZSXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1061g3010zsxi-datasheets-7677.pdf | 54-TSOP (0.400, 10.16mm Width) | 22.415mm | 10.16mm | Lead Free | 54 | 13 Weeks | 3A991.B.2.B | 8542.32.00.41 | 1 | YES | 2.2V~3.6V | DUAL | 3V | 0.8mm | 3.6V | 2.2V | R-PDSO-G54 | 16Mb 1M x 16 | Volatile | SRAM | Parallel | 1MX16 | 16 | 10ns | 16777216 bit | 10 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43TR16512BL-125KBLI | ISSI, Integrated Silicon Solution Inc | $13.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/issiintegratedsiliconsolutioninc-is43tr16512bl125kbli-datasheets-7588.pdf | 96-TFBGA | 14mm | 10mm | 96 | 12 Weeks | 1 | EAR99 | AUTO/SELF REFRESH | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | YES | 1.283V~1.45V | BOTTOM | 260 | 1.35V | 0.8mm | 1.45V | 1.283V | 10 | R-PBGA-B96 | 8Gb 512M x 16 | Volatile | 20ns | 800MHz | DRAM | Parallel | 512MX16 | 16 | 8589934592 bit | ||||||||||||||||||||||||||||||||||||||||||||||||
| AS4C512M16D3L-12BCN | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c1g8md3l12bcn-datasheets-7492.pdf | 96-TFBGA | 14mm | 9mm | Lead Free | 96 | 8 Weeks | 1 | EAR99 | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | 1 | YES | 1.283V~1.45V | BOTTOM | 1.35V | 0.8mm | 1.45V | 1.283V | 1.35V | 0.22mA | Not Qualified | R-PBGA-B96 | 8Gb 512M x 16 | Volatile | 3-STATE | 13.75ns | 800MHz | DRAM | Parallel | 512MX16 | 16 | 15ns | 8589934592 bit | 0.011A | COMMON | 8192 | 8 | 8 | |||||||||||||||||||||||||||||||||||||||||
| CY14B101LA-SP45XI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | 2.794mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy14b101lasp45xi-datasheets-7591.pdf | 48-BSSOP (0.295, 7.50mm Width) | 15.875mm | 3V | Lead Free | 48 | 13 Weeks | No SVHC | 48 | 1 Mb | yes | EAR99 | Gold, Tin | No | 8542.32.00.41 | 1 | 52mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1W | 2.7V~3.6V | DUAL | 260 | 3V | 0.635mm | CY14B101 | 48 | 3.6V | 2.7V | 30 | SRAMs | 1Mb 128K x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 128KX8 | 8 | 45ns | 0.005A | 8b | 45 ns | |||||||||||||||||||||||||||||||||||||
| FM22LD16-55-BG | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FRAM (Ferroelectric RAM) | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-fm22ld1655bg-datasheets-7690.pdf | 48-TFBGA | 8mm | 3.3V | Lead Free | 48 | 9 Weeks | 48 | 4 Mb | EAR99 | 8542.32.00.71 | 1 | 12mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 260 | 3.3V | 0.75mm | FM22LD16 | 48 | 3.6V | 2.7V | NOT SPECIFIED | SRAMs | Not Qualified | 4Mb 256K x 16 | Non-Volatile | 16b | FRAM | Parallel | 256KX16 | 16 | 110ns | 0.00015A | 16b | 55 ns | |||||||||||||||||||||||||||||||||||||||
| 5962-3829407MXA | Renesas Electronics America Inc. | $27.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-59623829407mxa-datasheets-7603.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 5962-3829407 | 28-CerDip | 64Kb 8K x 8 | Volatile | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V05L20PFGI | Renesas Electronics America Inc. | $805.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70v05l20pfgi-datasheets-7702.pdf | 64-LQFP | 10 Weeks | 3V~3.6V | IDT70V05 | 64-TQFP (14x14) | 64Kb 8K x 8 | Volatile | 20ns | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V24L20PFGI | Renesas Electronics America Inc. | $41.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70v24l20pfgi-datasheets-7607.pdf | 100-LQFP | 16 Weeks | 3V~3.6V | IDT70V24 | 100-TQFP (14x14) | 64Kb 4K x 16 | Volatile | 20ns | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR20H40CDF | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | SYNCHRONOUS | 0.9mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr25h40cdf-datasheets-7354.pdf | 8-VDFN Exposed Pad | 6mm | 3.3V | Lead Free | 8 | 12 Weeks | 37.393021mg | 8 | SPI, Serial | 4 Mb | EAR99 | 1 | 600mW | 3V~3.6V | DUAL | 260 | 3.3V | 1.27mm | 8 | 3.6V | 3V | 40 | 0.0465mA | Not Qualified | 4Mb 512K x 8 | Non-Volatile | 8b | 20 ns | 50MHz | RAM | SPI | 8 | 0.00075A | 8b | |||||||||||||||||||||||||||||||||||||||||||
| CY15B104Q-SXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | FRAM (Ferroelectric RAM) | SYNCHRONOUS | ROHS3 Compliant | 2013 | 8-SOIC (0.209, 5.30mm Width) | 5.28mm | 2.03mm | 5.23mm | Contains Lead | 8 | 13 Weeks | EAR99 | 8542.32.00.71 | 1 | YES | 2V~3.6V | DUAL | 3.3V | 1.27mm | 3.6V | 2V | 85°C | R-PDSO-G8 | 4Mb 512K x 8 | Non-Volatile | 40MHz | FRAM | SPI | 512KX8 | 8 | 4194304 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR4A16BCYS35R | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | 1.2mm | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr4a16bma35-datasheets-8258.pdf | 54-TSOP (0.400, 10.16mm Width) | 22.22mm | 3.3V | 54 | 8 Weeks | 54 | 16 Mb | EAR99 | No | 1 | 180mA | e3 | Tin (Sn) | 3V~3.6V | DUAL | 3.3V | 0.8mm | 54 | 3.6V | 3V | 16Mb 1M x 16 | Non-Volatile | 16b | RAM | Parallel | 1MX16 | 16 | 35ns | 0.014A | 16b | 35 ns | |||||||||||||||||||||||||||||||||||||||||||||||
| MR4A16BYS35 | Everspin Technologies Inc. | $21.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | 110mA | 1.2mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr4a16bma35-datasheets-8258.pdf | 54-TSOP (0.400, 10.16mm Width) | 22.22mm | 3.3V | Lead Free | 54 | 8 Weeks | 54 | 16 Mb | EAR99 | No | 1 | 180mA | 3V~3.6V | DUAL | 3.3V | 0.8mm | 54 | 3.6V | 3V | 16Mb 1M x 16 | Non-Volatile | 16b | RAM | Parallel | 1MX16 | 16 | 35ns | 0.014A | 16b | 35 ns | ||||||||||||||||||||||||||||||||||||||||||||||
| AS4C512M16D3L-12BIN | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3L | SYNCHRONOUS | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c1g8md3l12bcn-datasheets-7492.pdf | 96-TFBGA | 14mm | 1.2mm | 9mm | Lead Free | 96 | 8 Weeks | 1 | EAR99 | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | 1 | YES | 1.283V~1.45V | BOTTOM | 1.35V | 0.8mm | 1.45V | 1.283V | 1.35V | 0.22mA | Not Qualified | R-PBGA-B96 | 8Gb 512M x 16 | Volatile | 3-STATE | 13.75ns | 800MHz | DRAM | Parallel | 512MX16 | 16 | 15ns | 8589934592 bit | 0.011A | COMMON | 8192 | 8 | 8 | |||||||||||||||||||||||||||||||||||||||||
| FM28V100-TG | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FRAM (Ferroelectric RAM) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-fm28v100tgtr-datasheets-8468.pdf | 32-TFSOP (0.465, 11.80mm Width) | 8mm | 1.2mm | 11.8mm | 3.3V | Lead Free | 32 | 6 Weeks | No SVHC | 32 | 1 Mb | EAR99 | No | 1 | 12mA | e3 | PURE TIN | 2V~3.6V | DUAL | 260 | 3V | 0.5mm | FM28V100 | 32 | 3.6V | 2.7V | 40 | SRAMs | 1Mb 128K x 8 | Non-Volatile | 8b | FRAM | Parallel | 128KX8 | 90ns | 0.00015A | 8b | 105 ns | ||||||||||||||||||||||||||||||||||||||||
| 7005L20PFGI | Renesas Electronics America Inc. | $46.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7005l20pfgi-datasheets-7646.pdf | 64-LQFP | 16 Weeks | 4.5V~5.5V | IDT7005 | 64-TQFP (14x14) | 64Kb 8K x 8 | Volatile | 20ns | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV102416BLL-10TLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 18.6mm | 1.05mm | 12.2mm | 3.3V | Lead Free | 48 | 8 Weeks | No SVHC | 48 | 16 Mb | yes | 1 | No | 1 | 95mA | e3 | Matte Tin (Sn) - annealed | YES | 2.4V~3.6V | DUAL | 260 | 3.3V | 0.5mm | 48 | 3.6V | 2.4V | 40 | 16Mb 1M x 16 | Volatile | 3-STATE | 20b | SRAM | Parallel | 10ns | 0.02A | 16b | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||
| MR2A08ACYS35 | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | 50mA | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr2a08acma35-datasheets-8425.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 3.3V | Lead Free | 44 | 10 Weeks | 44 | 4 Mb | EAR99 | 8542.32.00.71 | 1 | 135mA | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.8mm | 44 | 3.6V | 3V | NOT SPECIFIED | Not Qualified | 4Mb 512K x 8 | Non-Volatile | 8b | RAM | Parallel | 256KX8 | 8 | 35ns | 0.02A | 8b | 35 ns | |||||||||||||||||||||||||||||||||||||||||||
| MR2A16ACYS35 | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SMD/SMT | MRAM (Magnetoresistive RAM) | 105mA | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr2a16acma35-datasheets-8264.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 1.2mm | 3.3V | Lead Free | 44 | 10 Weeks | No SVHC | 44 | 4 Mb | yes | EAR99 | No | MR2A16ACYS35 | 8542.32.00.71 | 1 | 165mA | 3V~3.6V | DUAL | 3.3V | 0.8mm | 44 | 3.6V | 3V | 85°C | 4Mb 256K x 16 | Non-Volatile | 16b | RAM | Parallel | 256KX16 | 16 | 35ns | 0.028A | 16b | 35 ns | |||||||||||||||||||||||||||||||||||||||||
| DS1225Y-200+ | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1225y150-datasheets-7360.pdf | 28-DIP Module (0.600, 15.24mm) | 28 | 6 Weeks | 28 | yes | EAR99 | 10 YEAR DATA RETENTION | not_compliant | 8542.32.00.41 | 1 | e3 | MATTE TIN | NO | 4.5V~5.5V | DUAL | NOT SPECIFIED | 5V | 2.54mm | DS1225Y | 28 | 5.5V | 4.5V | NOT SPECIFIED | SRAMs | 5V | 0.075mA | Not Qualified | 64Kb 8K x 8 | Non-Volatile | NVSRAM | Parallel | 8KX8 | 8 | 200ns | 65536 bit | 0.005A | 200 ns | ||||||||||||||||||||||||||||||||||||||||||
| MT40A256M16LY-062E AUT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Bulk | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 96-TFBGA | 1.14V~1.26V | 4Gb 256M x 16 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 15ns |
